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POWER DEVICES and IGBT Variation of NIECs IGBT Modules Ratings and Characteristics Power Loss and Thermal Design Gate Drive High Side Drive 3-Phase Bridge Inverter Short circuit and Over-voltage Protection Snubber Parallel Operation
2 4 6 10 20 24 26 30 33 36
DIODE
i E i v vF
Anode
Cathode
E -E v vF -E
THYRISTOR (SCR)
Anode
E i i
Gate Cathode
iG
E vT iG
Thyristor can be switched on by DC or pulse gate current. But, it cannot be turned off by gate signal.
TRANSISTOR (NPN)
Collector
E iC iC
Base Emitter
vCE iB
E vCE(sat)
Transistor can be turned on during the period when base current is supplied.
iB
MOSFET (Nch)
iD iD E
Drain
vDS
vGS iG
vDS(on)
Gate Source
iD -E
vGS
iG iD (=-IS) iS
MOSFET can be turned on during the period when gate voltage is applied. Gate current flows only for a short period at turn-on and at turn-off. Between Drain and Source, diode is built-in on chip, and its current runs opposite to drain current.
IGBT
Collecter
iC
iC
Gate Emitter
vCE iG
vGE
E vCE(sat)
vGE
Equivalent circuit
iG
IGBT, same as MOSFET, can be turned on during the period when gate voltage is applied, and gate current flows also only for a short period at turn-on and at turn-off. However, diode is not integrated on chip. In some IGBT Modules, discrete diode are assembled in the package.
Single
Example : PHMB400B12
PDMB
Example : PDMB100B12C
Doubler, 2 in 1
PBMB
Example : PBMB100B12C
Single-phase bridge, 4 in 1
PTMB
Example : PTMB100B12C
3-phase bridge, 6 in 1
PCHMB
Suffix A
Example : PCHMB100B12
Suffix A *1
Example : PRHMB400B12
*1 : PRFMB for 600V E-series
PVD
Example : PVD150-12
Example : PVD30-8
MAXIMUN RATINGS Tc=25 Item Collector-Emitter Voltage Gate-Emitter Voltage Symbol VCES VGES Rated Value 1200 20 Unit V V
An excessive stress over these ratings may immediately damage device, or degrade reliability. Designers should always follow these ratings.
C G E C G E
Collector Current
DC 1ms
IC ICP PC
100 200
A A
500
Maximum DC or pulse collector current Maximum power dissipation per IGBT element. This module (PDMB100B12) has two IGBT elements, so this value is effective for each of two elements.
Junction Temperature Storage Temperature Tj Tstg 40 150 40 125
Chip temperature range during continuous operation Storage or transportation temperature range with no electrical load
VISO Ftor
V Nm (kgf cm)
Mounting Torque
Maximum voltage between any terminal and base, with all terminals shorted Maximum mounting torque, using specified screws
ELECTRICAL CHARACTERISTICS Tc=25 (Per one IGBT Characteristics Collector-Emitter Cut-off Current Gate-Emitter Leakage Current Symbol ICES IGES Test Condition VCE=1200V, VGS=0V VGS=20V, VCE=0V Min. Typ. Max. 2.0 1.0 Unit mA A
C G E C G E
Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage VCE(sat) VGE(th) IC=100A, VGS=15V VCE=5V, IC=100mA 4.0 1.9 2.4 8.0 V V
A measure of IGBT steady-state power dissipation, which refers to forward voltage of diode, onstate voltage of SCR, or on-resistance of MOSFET.
Input Capacitance
Cies
8,300
pF
Switching Time
tr ton tf toff
6 C +15V G 600V E
15V
PDMB100B12 Maximum
td(on) (0.25s) tr 0.45s ton 0.70s td(off) (0.75s) tf 0.35s toff 1.1s
MAXIMUN RATINGS AND ELECTRICAL CHARACTERISTICS OF FWD Tc=25 Forward Current DC 1ms
IF IFM
100 200
A A
Symbol VF trr
Min.
Unit V s
Reverse Current
Condition
Min.
Typ.
Unit
Thermal Resistance
/W
IGBT
0.24/W Case temperature 0.24/W
Diode
0.42/W 0.42/W
* Measuring point is at the center of metal base plate. * Thermo-couple is inserted into a hole of 1mm in diameter and 5mm in depth. To define Rth(j-c), Tc is measured at metal base plate just below IGBT or diode chip.
Contact thermal resistance Heatsink temperature Heatsink thermal resistance Ambient temperature
IGBT Losses
Collector current
IC
Turn-on EON
Steady State
Turn-off EOFF
Current Voltage
10
RG 15V iC VCC RG
iC
+15V 15V
time
VCE (V)
150 100 50 0
VGE (V)
IG (A)
200
600
-1 -2 -3
IC (A)
t : 2 . 0 s/ DIV
-5
5.8x10
6x10
-5
6.2x10
-5
Time (s)
0.02 1.0x10
5 4 4 4 0
-5
ESW (J)
P (W)
EON
t : 2 . 0 s/ DIV
5.4x10
5.6x10
-5
5.8x10
-5
6x10
-5
6.2x10
-5
Time (s)
0 -1 -2 -3
VCE (V)
150 100 50 0
VGE (V)
IG (A)
IC (A)
t : 1 . 0 s/ DIV
1x10
-6
0x10
-6
2x10
-6
3x10
-6
4x10
-6
5x10
-6
Time (s)
0.02 1.0x10
5 4 4 4
ESW (J)
P (W)
EOFF
t : 1 . 0 s/ DIV
0.0
-2x10
-6
-1x10
-6
0x10
-6
1x10
-6
2x10
-6
3x10
-6
4x10
-6
5x10
-6
Time (s)
11
12
13
14
IGBT
FWD
Vcc
RG
FWD FWD
3:
Module Loss 482.5(W) *1 Collector-Emitter saturation voltage @ Ic=100A, TJ=125 *2 Forward voltage @ IF=100A, TJ=125
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FWD IGBT
Rth(j-c)=0.24/W Rth(j-c)=0.42/W
Case temperature Tc
Case temperature Tc
5mm
Fin temperature Tf
Ambient temperature Ta
Temperature difference between Tc and Tf, and between Tf and Ta TcTf TfTa Rth(c-f)482.5 Rth(f-a)482.5
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IGBT
FWD
IGBT
FWD
IGBT
FWD
IGBT
FWD
IGBT
FWD
IGBT
FWD
Lets review losses in IGBT module. Losses in IGBT are sum of steady-state (conduction) loss Psat, turn-on loss PON, and turn-off loss POFF. And, losses in FWD are sum of steady-state loss PF and reverse recovery loss PRR. Psat
IOP VCE(sat)
1 8
m 3
cos
= IOP VF
1 8
m 3
cos
VF of FWD is 1.8V @75A125; PF=4.7W Referring datasheet, we know turn-on loss, turn-off loss, and reverse recovery loss per pulse are 7.5mJ7mJand 6mJ, respectively. Multiplying frequency (15kHz) and 1/, we after all have average losses. EON35.8(W)EOFF33.4(W)ERR28.6(W) *1
sin d 2
0
17
(Psat+PON+POFF)
(PF+PRR)
IGBT
Rth(j-c)=0.3/W T(j-c)31.4
FWD
Rth(j-c)=0.6/W T(j-c)20.0
18
P t1 t3 t2
Check which is the highest temperature among IGBT elements, and consider transient temperature variation over average temperature.
19
Gate Drive
Rated (Maximum) Gate Drive Voltage
Gate Emitter Gate voltage range should be within 20V Exceeding this rating may destroy gate-emitter oxide SiO2, or degrade reliability of IGBT.
n+
p n n+ p+
n+
SiO2
Lower gate voltages, such as 12V or 10V, cause an increase in collector loss. Lower voltage as low as 6V cannot lead IGBT to be on-state, and collectoremitter voltage maintains near supply voltage. Once such a low voltage is applied to gate, IGBT may possibly be destroyed due to excessive loss.
20
Gate Drive
Dependence of on-gate voltage and off-gate bias on switching speed and noise
Increase in on-gate voltage (+VGE) results in faster turn-on, and turn-on loss becomes lower. It follows additional switching noise. As a matter of course, higher off-gate voltage (VGE) causes higher turn-off speed and lower turnoff loss. As expected, it follows higher turn-off surge voltage and switching noise. RG, +VGE, and -VGE are major factors which significantly affect switching speed of IGBT.
VGE RG
VGE
RG
Gate Capacitance
Gate Emitter
CGC CGE CGC CCE
Collector
CCE CGE
Gate
Emitter Input Capacitance Cies = Cge + Cgc Reverse Transfer Capacitance Cres = Cgc Output Capacitance Coes = Cce + Cgc
Collector
21
Gate Drive
RG 15V
Displacement current
+15V
RG High dv/dt
Displacement current flows due to high dv/dt, and gate voltage rises.
IC
Reverse gate bias and bypass resistance surpress inrush current and accompanied loss.
Gate Wiring
To be free from harmful oscillation, be sure to confirm following points.
Twist
*Set gate wiring as far as possible from power wiring, and do not set parallel to it. *If crossing is inevitable, cross in right angles. *Do not bundle gate wiring pairs. *Additional common mode inductor or ferrite bead to gate wiring is sometimes effective.
22
Gate Drive
VCE
CGC
Gate Drive Dissipation PG, Peak Gate Drive Current iGP +VGE=15V-VGE=-15Vf=10kHz
CGE
690nC
Assuming turn-on time is 500ns ; iGP = Qg / ton 69010-9 / 50010-9 1.4 (A)
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V+
V+ plus 15V
IN
-VGE
For high power applications, optocoupler is utilized for isolation, and, discrete buffer is added as output stage. For medium or less power applications, hybrid IC integrated in a package illustrated on the left is a popular choice.
* Use high common mode rejection (CMR) type. * To minimize dead time so as to decrease IGBT loss, use one with shortest transfer delay times, tPLH and tPHL. tPLH and tPHL are differences in delay time for output changes from L to H, or L to H, referred to input, respectively. * Major suppliers are Toshiba, Agilent Technologies, Sharp, NEC, and etc. * Application note of Agilent Technologies indicates that optocoupler ICs are recommended to 200VAC motor driver of 30kW or less (600V IGBT), and to 400VAC driver of 15kW or less (1,200V IGBT). For higher power applications, discrete optocoupler plus buffer is used as gate driver.)
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Vcc IN COM
Available line-ups are; High side Half bridge High and Low 3-phase bridge Many have rating of 600V, while some have of 1200V.
* Bootstrap diode should be fast recovery type, and its VRRM should be same as VCES of IGBT. * For bootstrap capacitor, use high frequency capacitor, such as film or ceramic, or add it in parallel. * Reduce line impedance of Vcc as small as possible.
Optocoupler Application Technique Structure AC400V line Typical Vcc current Dead time Assembly area Protection Inverter output Improvements 10mA More than 2s Large Built-in some Relatively easy Hybrid
Driver IC Relatively not easy Monolithic Tough on use Less than 2mA Less than 1s is available Small Plus current sensing Especially useful for 3phase 2.23.7kW
Drive capability, Protection, Noise margin, Less difference in characteristics, Integrated current-sensing, etc
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3-Phase Inverter
3-phase Induction Motor Driver and Output Timing Chart
Inrush current Protection
TrU R S T
TrV
TrW U V M
TrX
TrY
TrZ
Gate Driver
Protection
TrU
TrV
TrW
TrX
TrY
TrZ
0 120 240 0 120 240 0 120 240 0 120 240 0
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3-Phase Inverter
AC200V applications AC400V applications 3-phase Motor Output 3.7kW 5.5kW 7.5kW 15kW 30kW 45kW 55kW
IC = 0.0138P IC = 0.00688P AC400V IC of 1,200V IGBT 25A (25.5A) 50A (51.0A) 100A (103.5A) 200A (207A) 300A (309.6A) 400A (379.5A) : Calculated Value
AC200V IC of 600V IGBT 50A (51.0A) 75A (75.9A) 100A (103.5A) 200A (207A) 400A (414A) 600A (621A)
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3-Phase Inverter
PGH508
91 0.1F
910
PTMB50E6(C)
0.1 10W 3 20
TrU
1ZB18
20
TrV
1ZB18
20
TrW
1ZB18
R S T
15k
C*
C*
15k
C*
20
TrX
1ZB18
20
TrY
1ZB18
U V W
20
TrZ
1ZB18
15k
15k
15k
C* : 0.10.22F 630V
+15V
+15V +15V +15V 0.1 Gate Emitter 0.1 Gate Emitter 0.1 Gate Emitter 0.1 Gate Emitter 0.1 0.1 Gate Emitter
360
1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4
8 7 6 5 8 7 6 5 8 7 6 5 8 7 6 5 8 7 6 5 8 7 6 5
TLP250
TrU
10 0.1
47k6
100
0.1
360
TLP250
TrV
U V W X Y Z
74HC04 360 360
TLP250
CPU
TrW
360
TrX
TrY
360
TrZ
74HC06
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3-Phase Inverter
Noise Filter
Capacitor
IR2137
Design kit using driver IC IR2137 and current sensing IC IR2171 International Rectifier
29
Over-current flows.
Shut down IGBT within 10s (Unless the IGBT will be failed.
30 20 10
4x10 6 3.2x10
6
2.4x10 1.6x10
VCE (V)
VGE (V)
VCE IC
P (W)
IC (A)
VGE PC
0x10 -6 5x10 -6 10x10 -6 15x10 -6 20x10 -6
8x10 5 0x10 0
-5x10 -6
Time (s)
31
RG 10 15k 18V ZD
Stray inductance Ls
In the event of arm (load) short-circuit, current is so large because it is only limited by ESR of electrolyte capacitor and gain of IGBT. Corresponding loss is also large, and IGBT will fail unless it is not turned-off within 10s. Simultaneously, it followed by surge voltage (inductive voltage kick), and which is the product of collector-emitter stray inductance Ls and -di/dt. Assuming Ls is so small as 0.1H, the voltage reaches as high as 200V if -di/dt is 2,000A/s. To reduce -di/dt, IGBT should be turned-off slowly. In addition to soft turn-off, stray inductance should be minimized as small as possible During transition from on-state to off-state, collector voltage rises. As a result, gate is charged up through reverse transfer capacitance Cgc. Given this situation, collector current is increased more and more, and gate is possibly destroyed. We recommend addition of both bypass resistor and zener diode between gate and emitter terminals.
Collector Current IC
IC
-dic/dt
VLs-dic/dt Collector-Emitter Voltage VCE IGBT may be destroyed by the voltage spike which exceeds C-E voltage rating.
32
Snubber
At turn-off, stored energy in inductance generates surge voltage, which is applied to collector-emitter of IGBT. As snubber capacitor is responsible for a part of turn-off energy, snubber circuit can suppress over-voltage and incidental turn-off loss. As a matter of course, stacked up energy in capacitor should be dissipated properly.
RCD Snubber
Stored energy at turn-off : 1/2LiC2
iC
e+ LdiC/dt
IGBT
diC/dt
iC
L + iC E IGBT
iS Cs e iC iS
L +
iton
Discharge current of Cs iC
IGBT
iC Cs
33
vs e vCE
Snubbers individually connected to each IGBT are more effective than ones between DC bus and ground. But, we have a difficulty that loss in Rs is large. Loss in Rs is Lic2 times switching frequency, for example, the loss is 20W, assumed L=0.2H, ic=100A, and f=10kHz. In this case, total snubber loss reaches as high as 120W in 3-phase circuit. So, our choice is to set frequency lower, or, to regenerate the energy. To reduce e, minimize stray inductance in main circuit loop at first, so we will have a smaller Cs in accordance to the reduced inductance. The vs is the sum of (dic/dt)(stray inductance of wiring), forward recovery voltage of Ds, and dic/dt (stray inductance of Cs). Considerations on snubber are; *Drive IGBT in lower -dic/dt. (Turn-off IGBT slowly.) *Place electrolytic capacitors as close to IGBT module as possible, apply copper bars to wiring, and laminate them where possible, so as to minimize wiring inductance of main circuit *Also, set snubber as close to IGBT module as possible, use high frequency oriented capacitors, such as film capacitors. *Use low forward recovery, fast and soft reverse recovery diode as Ds.
Popular Snubbers
Shown are lump snubbers (between power buss and ground).
Snubber1
Snubber2
Snubber3
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IGBT IC
10A
50A 0.47F
100A
200A
300A
400A
In highest power applications, snubbers would be not enough to be free from device failure or malfunction due to noise otherwise wiring inductance could be minimized using copper bars or laminated them.
Cs
Rs
Assuming all of the stored energy in L is absorbed by Cs, 1/2LiC21/2Cse2 Thus, CsL(iC/e)2 Charge in Cs must be fully discharged before the next turn-on, and we focus on time constant (CsRs). To discharge below 90%; Rs1/(2.3Cs f) f : switching frequency This relationship indicates minimum value of Rs. In addition, an excessively small Rs may result in harmful oscillation at turn-on, so, somewhat larger resistance would be preferable. Dissipation in Rs, P(Rs), is independent of Rs. P(Rs)1/2LiC2
35
Parallel Operation
Parallel Operation and Current Imbalance
We introduce high current IGBT modules, which extend to 1,200A for 600V series, and 800A for 1,200V series. So, we cover up to 100kW 3-phase inverters. Consequently, parallel operation of IGBT modules is not so important, but, when designing 3-phase inverters, information on rules for parallel operation may possibly be useful. Let us show you the points in brief.
Ic1 Ic2
Lc2
IGBT-2
L E1
L E2
Current sharing during parallel operation depends on both circuit design and device characteristics. Oscillations caused by gate-emitter wiring inductance LGresistance RGand Cies, will possibly be the origin of device failures as a result of malfunction or non-saturation of IGBT. Minimal RG required is in proportion to LG. Accordingly, minimize the inductance, and RG should also be larger than or equal to recommended.
Turn-on
Steady-state
Turn-off
*Differences in wiring inductance lead to poor current sharing at turn-on or at turnoff. Collector and emitter wiring to each IGBT should be equal and minimal. *Each IGBT needs gate resistor, and gate wirings should also be equal and minimal. Connect emitter wiring to auxiliary emitter terminal, not to main emitter terminal. *Saturation voltage VCE(sat) and some other characteristics are depend on temperature. Obtain smallest possible deference in temperature rises among modules.
36
Parallel Operation
Some current imbalance in parallel operation is inescapable, and handling current per module is roughly decreased to 80%. For example, expected total current of 4 300A modules in parallel is 3000.84=960A. On your request, we can ship VCE(sat) ranked modules for larger than 1,200A/600V or 800A/1200V applications. Contact us for further information. For your repeat order when repair is needed, we ship group of modules in a VCE(sat) rank, but the rank may not be same as the original.
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