4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

September 2009

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Features
High sensitivity to low input drive current Meets or exceeds all JEDEC Registered

Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Specications
UL, C-UL approved, File #E90700, Volume 2 IEC 60747-5-2 approved (ordering option V)

Applications
Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials

and impedances

Schematic

ANODE 1

6 BASE

6 1
CATHODE 2 5 COLLECTOR

6 1

N/C 3

4 EMITTER

6 1

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Absolute Maximum Ratings (TA = 25C unless otherwise specied.)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR BVCEO BVCBO BVECO PD IC Storage Temperature Operating Temperature

Parameter

Value
-50 to +150 -40 to +100 260 for 10 sec 250 3.3 80 3 3.0 150 2.0 30 30 5 150 2.0 150

Units
C C C mW mW/C mA V A mW mW/C V V V mW mW/C mA

Lead Solder Temperature (Wave) Total Device Power Dissipation @ TA = 25C Derate above 25C Continuous Forward Current Reverse Voltage Forward Current Peak (300s, 2% Duty Cycle) LED Power Dissipation @ TA = 25C Derate above 25C Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Detector Power Dissipation @ TA = 25C Derate above 25C Continuous Collector Current

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 2

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Electrical Characteristics (TA = 25C Unless otherwise specied.)

Individual Component Characteristics
Symbol
EMITTER VF Input Forward Voltage* IF = 10mA 4NXXM H11B1M, TIL113M IR Reverse Leakage Current* VR = 3.0V VR = 6.0V C BVCEO Capacitance* VF = 0V, f = 1.0MHz 4NXXM H11B1M, TIL113M All 4NXXM, TIL113M H11B1M BVCBO BVECO Collector-Base Breakdown Voltage* IC = 100A, IE = 0 All 4NXXM H11B1M, TIL113M ICEO Collector-Emitter Dark Current* VCE = 10V, Base Open All Emitter-Collector Breakdown Voltage* IE = 100A, IB = 0 30 25 30 5.0 7 0.8 1.2 1.2 0.001 0.001 150 60 60 100 10 10 1 100 nA V V 1.5 1.5 100 10 pF V A V

Parameter

Test Conditions

Device

Min.

Typ.

Max.

Unit

DETECTOR Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0

Transfer Characteristics
Symbol
IC(CTR)

Parameter
Collector Output Current*(1, 2)

Test Conditions
IF = 10mA, VCE = 10V, IB = 0

Device
4N32M, 4N33M 4N29M, 4N30M

Min.
50 (500) 10 (100) 5 (500) 30 (300)

Typ.

Max.

Unit
mA (%)

DC CHARACTERISTICS

IF = 1mA, VCE = 5V IF = 10mA, VCE = 1V VCE(SAT) Saturation Voltage*(2) IF = 8mA, IC = 2.0mA IF = 1mA, IC = 1mA AC CHARACTERISTICS ton Turn-on Time IF = 200mA, IC = 50mA, VCC = 10V, RL = 100 IF = 10mA, VCE = 10V, RL = 100 toff Turn-off Time IF = 200mA, IC = 50mA, VCC = 10V, RL = 100

H11B1M TIL113M 4NXXM TIL113M H11B1M 4NXXM, TIL113M H11B1M 4N32M, 4N33M, TIL113M 4N29M, 4N30M

1.0 1.25 1.0 5.0 25 100

40 18 30 kHz

IF = 10mA, VCE = 10V, RL = 100 BW Bandwidth(3, 4)

H11B1M

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 3

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Electrical Characteristics (TA = 25C Unless otherwise specied.) (Continued)

Isolation Characteristics
Symbol
VISO

Characteristic
Input-Output Isolation Voltage
(5)

Test Conditions
f = 60Hz, t = 1 sec. VDC VDC

Device
All 4N32M* 4N33M* All All

Min.
7500 2500 1500 1011

Typ.

Max.

Units
VACPEAK V

RISO CISO

Isolation Resistance(5) Isolation Capacitance

(5)

VI-O = 500VDC VI-O = , f = 1MHz

0.8

pF

* Indicates JEDEC registered data. Notes: 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current. 2. Pulse test: pulse width = 300s, duty cycle 2.0% . 3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms. 4. The frequency at which IC is 3dB down from the 1kHz value. 5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol

Parameter
Installation Classications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms For Rated Main voltage < 300Vrms Climatic Classication Pollution Degree (DIN VDE 0110/1.89)

Min.

Typ.

Max.

Unit

I-IV I-IV 55/100/21 2 175 1594 Vpeak

CTI VPR

Comparative Tracking Index Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC

1275

Vpeak

VIORM VIOTM

Max. Working Insulation Voltage Highest Allowable Over Voltage External Creepage External Clearance Insulation Thickness

850 6000 7 7 0.5 109

Vpeak Vpeak mm mm mm

RIO

Insulation Resistance at Ts, VIO = 500V

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 4

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Typical Performance Curves

Fig. 1 LED Forward Voltage vs. Forward Current
1.8 1.6 VCE = 5.0V TA = 25C Normalized to IF = 10 mA

Fig. 2 Normalized CTR vs. Forward Current

1.7

1.4

VF - FORWARD VOLTAGE (V)

1.6

1.2

1.5

NORMALIZED CTR

1.0

1.4

TA = -55C

0.8

1.3 TA = 25C 1.2 TA = 100C 1.1

0.6

0.4

0.2

1.0 1 10 100

0.0 0 2 4 6 8 10 12 14 16 18 20

IF - LED FORWARD CURRENT (mA)

IF - FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4 1.0

Fig. 4 CTR vs. RBE (Unsaturated)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0

IF = 20 mA

1.2 IF = 5 mA

NORMALIZED CTR

1.0 IF = 10 mA 0.8

0.6

IF = 20 mA

0.4

Normalized to IF = 10 mA TA = 25C

0.2 -60 -40 -20 0 20 40 60 80 100 10 100 1000

TA - AMBIENT TEMPERATURE (C)

RBE- BASE RESISTANCE (k)

Fig. 5 CTR vs. RBE (Saturated)

1.0 100

Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

0.9

VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)

VCE= 0.3 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 IF = 5 mA IF = 10 mA IF = 20 mA

TA = 25C

10

1
IF = 2.5 mA

0.1

0.01
IF = 5 mA IF = 10 mA

IF = 20 mA

0.001 0.01

0.1

10

RBE- BASE RESISTANCE (k )

IC - COLLECTOR CURRENT (mA)

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 5

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Typical Performance Curves (Continued)

Fig. 7 Switching Speed vs. Load Resistor
1000 IF = 10 mA VCC = 10 V TA = 25C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 10 100 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100

Fig. 8 Normalized ton vs. RBE

SWITCHING SPEED - (s)

100

10

Toff

Tf

Ton
1

Tr

0.1 0.1

R-LOAD RESISTOR (k)

NORMALIZED ton - (ton(RBE) / ton(open))

RBE- BASE RESISTANCE (k )

Fig. 9 Normalized toff vs. RBE

ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4 1.3 10000

Fig. 10 Dark Current vs. Ambient Temperature

VCE = 10 V TA = 25C

NORMALIZED toff - (toff(RBE) / toff(open))

1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100

1000

100

10

0.1

0.01

0.001 0 20 40 60 80 100

RBE- BASE RESISTANCE (k )

TA - AMBIENT TEMPERATURE (C)

TEST CIRCUIT
VCC = 10V

WAVE FORMS

INPUT PULSE

IF INPUT RBE

IC

RL
10% 90% tr ton Adjust IF to produce IC = 2 mA tf toff OUTPUT PULSE

OUTPUT

Figure 11. Switching Time Test Circuit and Waveforms

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 6

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Package Dimensions
Through Hole
8.138.89
6 4 6

0.4" Lead Spacing

8.138.89
4

6.106.60 6.106.60

Pin 1

Pin 1 5.08 (Max.) 3.283.53 0.250.36

7.62 (Typ.)

5.08 (Max.) 3.283.53

0.250.36

0.38 (Min.)

2.543.81 0.38 (Min.) 0.200.30 2.543.81

(0.86) 0.410.51 1.021.78 0.761.14

2.54 (Bsc)

15 (Typ.) (0.86) 0.410.51 1.021.78 0.761.14 10.1610.80 2.54 (Bsc) 0.200.30

Surface Mount
8.138.89
6 4

(1.78) (1.52) (2.54)

6.106.60 8.439.90

(7.49) (10.54)

Pin 1

(0.76)

Rcommended Pad Layout

0.250.36

3.283.53 5.08 (Max.) 0.38 (Min.) 2.54 (Bsc) (0.86) 0.410.51 1.021.78 0.761.14 0.160.88 (8.13)

0.200.30

Note: All dimensions in mm.

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 7

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Ordering Information
Sufx
No Sufx S SR2 T V TV SV SR2V

Example
4N32M 4N32SM 4N32SR2M 4N32TM 4N32VM 4N32TVM 4N32SVM 4N32SR2VM Surface Mount Lead Bend

Option
Standard Through Hole Device (50 units per tube) Surface Mount; Tape and Reel (1,000 units per reel) 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)

Marking Information

4N29 V
3 4

2 6

X YY Q
5

Denitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) One digit year code, e.g., 7 Two digit work week ranging from 01 to 53 Assembly package code

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 8

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Tape Dimensions
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 1.5 MIN 1.75 0.10

11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3

0.1 MAX

10.1 0.20

1.5 0.1/-0

User Direction of Feed

Note: All dimensions are in millimeters.

Reow Soldering Prole

300 280 260 240 220 200 180 160 C 140 120 100 80 60 40 20 0 0 260C >245C = 42 Sec

Time above 183C = 90 Sec 1.822C/Sec Ramp up rate

33 Sec 60 120 180 270 360

Time (s)

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 9

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH* *

Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter* FPS

F-PFS FRFET SM Global Power Resource Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS SyncFET Sync-Lock *

The Power Franchise

TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT* SerDes UHC Ultra FRFET UniFET VCX VisualMax XS

PDP SPM Power-SPM

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40

2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com 10