# All the input and output file names need to be specified here. Grid: is the input structure file.

Current: is the file in which the current-voltage information needs to be saved during the actual solve operation. Plot: is the file in which the 2D contur information like electron concentration, electric potential etc., should be saved. Output: is the name of log file. File { Grid= "PN_final_fps.tdr" Current= "bottom.plt" Plot= "bottom.tdr" Output= "bottom.log" } # We have to list the names of the structure contacts along with the initial bias, in the electrode section. If required, workfunction, contact resistance, barrier height etc., can be specified in this section. Electrode { { Name= "n" Voltage= 0.0 } { Name= "p" Voltage= 0.0 } } # The physical models that needs to be included in the simulation should be specified in the "Physics" section. One should be careful in choosing the models. The models you include should completely reflect the physical phenominon happening in the device. Physics { Mobility ( DopingDep ) EffectiveIntrinsicDensity(BandGapNarrowing(oldSlotboom)) Recombination (Avalanche(CarrierTempDrive) #Band2Band (E2) SRH) } # The parameters that you want to visualize in the plot file after the device simulation needs to be included here. Plot { Doping DonorConcentration AcceptorConcentration BandGap BandGapNarrowing ElectronAffinity ConductionBandEnergy ValenceBandEnergy eQuasiFermiEnergy hQuasiFermiEnergy eDensity hDensity EffectiveIntrinsicDensity IntrinsicDensity ElectricField/Vector Potential SpaceCharge Current/Vector eCurrent/Vector hCurrent/Vector CurrentPotential * for visualizing current lines eMobility hMobility SRHRecombination AugerRecombination TotalRecombination SurfaceRecombination

eLifeTime hLifeTime ComplexRefractiveIndex QuantumYield } # This section directs the solver with information line, which numerical method to use during the solution, what should be the initial guess for each bias point, How many iteration it should wait to reduce the step size, if the convergence is not met. etc., Math { Extrapolate Iterations= 8 SubMethod= ParDiSo Method= Blocked } # This is the actual section in which the solver is directed with the set of equeations to solve. For example, if only "Poisson" is used, it just calculates the device electrostatics and not currents. For a proper device simulation one needs to solve all the Poisson, electron contunity and hole contunity equation in a self-consistant manner, i.e., in a coupled manner. Quasistationary is a sweep method where the expernal boundry conditions are varied for each of the new soultion. In addition, we have a Transient (to simulate time varying parameters) and Coutinous (to simulate devices which have sudden variation is current or voltage, for example the breakdown in a avalanche diode). But, for a normal DC simulation we use only the Quasistationary sweep. Remember all the step sizes mentioned here are time steps in the scale of 0 to 1. The corresponding voltage step is simulated based on the time step you specify. Solve{ Poisson Poisson Electron Hole Coupled { Poisson Electron Hole } NewCurrentFile="forwardbias" Quasistationary ( MaxStep = 0.01 MinStep = 1e-8 Goal { Name = "p" Voltage =5}) { Coupled { Poisson Electron Hole } } NewCurrentFile="completebiasbias" Quasistationary ( MaxStep = 0.01 MinStep = 1e-8 Goal { Name = "p" Voltage =-5}) { Coupled { Poisson Electron Hole } } }