AN1557 APPLICATION NOTE

How to Design-in LightFlash Memories, Ensuring Compatibility with Standard Flash Memories in DVD and TV Applications
CONTENTS
s s

INTRODUCTION This Application Note explains how to design-in the M29KW016E and M29KW032E LightFlash memories, ensuring compatibility with Industry Standard Flash memories (M29W160D and M29W320D), typically in DVD and TV applications where the reprogramming feature is not required.

INTRODUCTION DESCRIPTION OF LIGHTFLASH FLASH MEMORIES PACKAGES SIGNAL DESCRIPTIONS BLOCK ORGANIZATION COMMAND INTERFACE STATUS REGISTER WRITE PROTECTION AC AND DC PARAMETERS PROGRAM AND ERASE TIMES CONCLUSION REVISION HISTORY

s s s s s s s

DESCRIPTION OF LightFlash FLASH MEMORIES The LightFlash (M29KWxxxE) is a new family of non-volatile Flash memories optimized for use in Basic Code Storage applications. They can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6) power supply. The memories have a uniform block architecture, where each block can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The LightFlash memories feature a Multiple Word Program command (based on a Fast Program Algorithm) which is used to program large streams of data. It reduces the total programming time by programming Words at consecutive addresses, where the address is automatically incremented, thus reducing the number of Write cycles required. The LightFlash family uses a separate, external high voltage supply VPP of 12V, for all Program and Erase operations to further reduce the Program and Erase times. Chip Erase times are typically 50% less than on the Standard memories. Refer to the M29KWxxxE datasheets for a complete description of the LightFlash memories.

s s

September 2002

1/21

AN1557 - APPLICATION NOTE

PACKAGES Table 1 summarizes the organization and packages of the two sets of memories. Table 1. Comparison of Industry Standard and LightFlash Memories
Industry Standard Device M29W160D Size 16Mb Organization 2Mb x 8 1Mb x16 4Mb x 8 2Mb x16 Packages SO44 TSOP48 TFBGA48 TSOP48 TFBGA63 Device M29KW016E LightFlash Size 16Mb Organization 1Mb x16 Packages SO44 TSOP48 TFBGA48 TSOP48 TFBGA48

M29W320D

32Mb

M29KW032E

32Mb

2Mb x16

SO44 Connections Figure 1 compares the S044 pin out of the M29KW016E with the M29W160D. The two differences are highlighted by the shaded areas. Pin 31 is DQ15A-1 in the M29W160D and DQ15 in the M29KW016E. Pin 33 is the BYTE connection for the M29W160D but in the M29KW016E it is the VPP voltage connection. When replacing M29W160D with M29KW016E care must be taken with pin 33. It must be set in the VPP range to allow Program or Erase operations in the M29KW016E. If VPP is set to VIL or VIH, any Program or Erase command will be ignored and the device will revert to read mode. To read the device VPP should be at VIH or VSS. Figure 1. SO44 Connections Comparison, 16Mbit
M29W160D RP A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 RP A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 M29KW016E 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 W A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 VPP VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC M29W160D W A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
AI06297

Note: The shaded areas highlight the differences.

2/21

AN1557 - APPLICATION NOTE

TSOP48 Connections 16Mbit Devices. Figure 2 compares the TSOP48 pin out of the M29KW016E with the M29W160D. The three differences are highlighted by the shaded areas. Pin 14 is NC (Not Connected) for M29W160D but VPP for M29KW016E. Pin 14 must not be left floating on M29KW016E otherwise the memory operations are not reliable. In the M29W160D the connection is ignored. Pin 47 is BYTE for M29W160D but NC (Not Connected) for M29KW016E. Pin 47 is used to select between a x8 and x16 bus width on M29W160D but it can be ignored on M29KW016E. Pin 45 is DQ15A-1 for M29W160D and DQ15 for M29KW016E. Figure 2. TSOP48 Connections Comparison, 16Mbit
M29W160D A15 A14 A13 A12 A11 A10 A9 A8 A19 NC W RP NC NC RB A18 A17 A7 A6 A5 A4 A3 A2 A1 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC W RP NC VPP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 M29KW016E 48 A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 M29W160D A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0

12 13

37 36

24

25

AI06298

Note: The shaded areas highlight the differences.

3/21

AN1557 - APPLICATION NOTE

32Mbit Devices. Figure 3 compares the TSOP48 pin out of the M29KW032E with the M29W320D. The three differences are highlighted by the shaded areas. Pin 14 is VPP/WP for M29W320D but VPP for M29KW032E. When replacing M29W320D with M29KW032E care must be taken with pin 33. It must be set in the VPP range to allow Program or Erase operations in the M29KW032E. If VPP is set to VIL or VIH, any Program or Erase command will be ignored and the device will revert to read mode. To read the device VPP should be at VIH or VSS. Pin 47 is BYTE for M29W320D but NC (Not Connected) for M29KW032E. Pin 47 is used to select between a x8 and x16 bus width on M29W320D but it can be ignored on M29KW032E. Pin 45 is DQ15A-1 for M29W320D and DQ15 for M29KW032E. Figure 3. TSOP48 Connections Comparison, 32Mbit
M29W320D A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP NC VPP/WP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP NC VPP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 M29KW032E 48 A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 M29W320D A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0

12 13

37 36

24

25

AI06299

Note: The shaded areas highlight the differences.

4/21

AN1557 - APPLICATION NOTE

TFBGA Connections 16Mbit Devices. Figure 4 compares the TFBGA48 pin out of the M29KW016E with the M29W160D. The three differences are highlighted by the shaded balls. B3 is NC (Not Connected) for M29W160D but VPP for M29KW016E. B3 must not be left floating on M29KW016E otherwise the memory operations are not reliable. In the M29W160D the connection is ignored. F6 is BYTE for M29W160D but NC (Not Connected) for M29KW016E. F6 is used to select between a x8 and x16 bus width on M29W160D but it can be ignored on M29KW016E. G6 is DQ15A-1 for M29W160D and DQ15 for M29KW016E. Figure 4. TFBGA48 Connections Comparison (Top view through package), 16Mbit
M29KW016E
1 2 3 4 5 6 1 2

M29W160D
3 4 5 6

A3

A7

RB

A9

A13

A3

A7

RB

A9

A13

A4

A17

VPP

RP

A8

A12

A4

A17

NC

RP

A8

A12

A2

A6

A18

NC

A10

A14

A2

A6

A18

NC

A10

A14

A1

A5

NC

A19

A11

A15

A1

A5

NC

A19

A11

A15

A0

DQ0

DQ2

DQ5

DQ7

A16

A0

DQ0

DQ2

DQ5

DQ7

A16

DQ8

DQ10

DQ12

DQ14

NC

DQ8

DQ10

DQ12

DQ14

BYTE

DQ9

DQ11

VCC

DQ13

DQ15

DQ9

DQ11

VCC

DQ13

DQ15 A-1

VSS

DQ1

DQ3

DQ4

DQ6

VSS

VSS

DQ1

DQ3

DQ4

DQ6

VSS

AI07500

Note: The shaded areas highlight the differences.

5/21

AN1557 - APPLICATION NOTE

32Mbit Devices. The 32Mbit devices are both packaged in TFBGA packages but the M29W320D has 15 extra pins that are Not Connected. With the exception of these extra pins whose connection can be ignored, the packages are mechanically compatible (refer to Package Mechanical section of datasheets), that is they can be used on the same board. Figure 4 compares the TFBGA pin out of the M29KW032E with the M29W320D. The differences are highlighted by the shaded balls. B3 is NC (Not Connected) for M29W320D but VPP for M29KW032E. B3 must not be left floating on M29KW032E otherwise the memory operations are not reliable. In the M29W160D the connection is ignored. F6 is BYTE for M29W320D but NC (Not Connected) for M29KW032E. F6 is used to select between a x8 and x16 bus width on M29W320D but it can be ignored on M29KW032E. G6 is DQ15A-1 for M29W320D and DQ15 for M29KW032E. Figure 5. TFBGA Connections Comparison (Top view through package), 32Mbit
M29W160D TFBGA63 M29KW016E TFBGA48
A 1 2 3 4 5 6 7 8

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

A3

A7

RB

A9

A13

A3

A7

RB

A9

A13

A4

A17

VPP

RP

A8

A12

A4

A17

VPP/WP

RP

A8

A12

A2

A6

A18

NC

A10

A14

A2

A6

A18

NC

A10

A14

A1

A5

A20

A19

A11

A15

A1

A5

A20

A19

A11

A15

A0

DQ0

DQ2

DQ5

DQ7

A16

A0

DQ0

DQ2

DQ5

DQ7

A16

DQ8

DQ10

DQ12

DQ14

NC

DQ8

DQ10

DQ12

DQ14

BYTE

DQ9

DQ11

VCC

DQ13

DQ15

DQ9

DQ11

VCC

DQ13

DQ15 A1

VSS

DQ1

DQ3

DQ4

DQ6

VSS

VSS

DQ1

DQ3

DQ4

DQ6

VSS

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

AI07501

Note: The shaded areas highlight the differences.

6/21

AN1557 - APPLICATION NOTE

SIGNAL DESCRIPTIONS This section describes the signals that differ between the LightFlash and Standard Flash devices. VPP (M29KW016E, M29KW032E) VPP is both a power supply and Write Protect pin. The two functions are selected by the voltage range applied to the pin. The Supply Voltage VCC must be applied before the Program Supply Voltage VPP. If VPP is in the range 11.4V to 12.6V it acts as a power supply pin for Program and Erase operations. V PP must be stable until the Program/Erase algorithm is completed. If VPP is kept in a low voltage range (0V to 3.6V) VPP is seen as a Write Protect pin. In this case a voltage lower than VHH gives an absolute protection against Program or Erase, while VPP in the range of VHH enables these functions. The VPP pin must be in the range of VHH when reading the Status Register during Program and Erase operations. A 0.1f capacitor should be connected between VPP and VSS to decouple the current surges from the power supply. Note that VPP must not be left floating or unconnected as the device may become unreliable. VPP/Write Protect, VPP/WP (M29W320D) The VPP/Write Protect pin provides two functions. The VPP function allows the memory to use an external high voltage power supply to reduce the time required for Unlock Bypass Program operations. The Write Protect function provides a hardware method of protecting the 16 Kbyte Boot Block. The VPP/Write Protect pin must not be left floating or unconnected. When VPP/Write Protect is Low, VIL, the memory protects the 16 Kbyte Boot Block; Program and Erase operations in this block are ignored while VPP/Write Protect is Low. When V PP/Write Protect is High, VIH, the memory reverts to the previous protection status of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the 16 Kbyte Boot Block unless the block is protected using Block Protection. When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes. A 0.1F capacitor should be connected between the VPP/Write Protect pin and the VSS Ground pin to decouple the current surges from the power supply. The VPP/Write Protect pin is not present on the M29W160D. BYTE (M29W160D, M29W320D) The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in x8 mode, when it is High, VIH, the memory is in x16 mode. The Byte/Word Organization Select pin is not present in the LightFlash memories. DQ15A-1 (M29W160D, M29W320D) When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A1 Low will select the LSB of the Word on the other addresses, DQ15A1 High will select the MSB. RP The Reset pin can be used to apply a Hardware Reset to the memory for both sets of devices. In the M29W160D/320D it can also be used to temporarily unprotect all Blocks that have been protected (holding RP at VID will temporarily unprotect the protected Blocks in the memory). Refer to the relevant datasheets for a more detailed description. NC These pins are NOT CONNECTED internally so the memory will ignore any external connection.
7/21

AN1557 - APPLICATION NOTE

BLOCK ORGANIZATION The LightFlash and Standard Flash memories have different block organizations. The LightFlash memories have a Uniform block organization, while the Standard Flash memories have an Asymmetric block organization. The block organization for each device is shown in Table 2. The differences must be taken into account when erasing the memories using the Block Erase command (block address must be specified). The different block organizations have no consequence for the Chip Erase command (the block addresses are incremented internally) or Programming commands. As the LightFlash memories only support a x16 data bus the following sections refer to operations using only the x16 data bus. Tables 3 and 4 give the block addresses for the LightFlash memories while Figures 6 and 7 give the block addresses for the Standard Flash memories in x16 mode. Table 2. Block Organization
Device M29KW016E Block Organization Uniform Type of Block Main Main Small Main M29W160D Asymmetric Boot Parameter M29KW032E Uniform Main Main Small Main M29W320D Asymmetric Boot Parameter 1 2 8KWords 4KWords 1 2 16 63 1 8KWords 4KWords 128KWords 32KWords 16KWords Number of Blocks 8 31 1 Size of Block 128KWords 32KWords 16KWords

8/21

AN1557 - APPLICATION NOTE

Table 3. M29KW016E Block Addresses
Block Number 8 7 6 5 4 3 2 1 Address Range E0000h-FFFFFh C0000h-DFFFFh A0000h-BFFFFh 80000h-9FFFFh 60000h-7FFFFh 40000h-5FFFFh 20000h-3FFFFh 00000h-1FFFFh

Figure 6. M29W160D Block Addresses (x16)

M29W160DT Top Boot Block Addresses (x16) M29W160DB Bottom Boot Block Addresses (x16)

FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h

FFFFFh 32 KWord F8000h F7FFFh 32 KWord F0000h Total of 31 32 KWord Blocks

0FFFFh 32 KWord 08000h 07FFFh 16 KWord Total of 31 32 KWord Blocks 04000h 03FFFh 4 KWord 03000h 02FFFh 4 KWord 02000h 01FFFh 8 KWord 00000h

0FFFFh 32 KWord 08000h 07FFFh 32 KWord 00000h

AI07502

9/21

AN1557 - APPLICATION NOTE

Table 4. M29KW032E Block Addresses
Block Number 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 Address Range 1E0000h-1FFFFFh 1C0000h-1DFFFFh 1A0000h-1BFFFFh 180000h-19FFFFh 160000h-17FFFFh 140000h-15FFFFh 120000h-13FFFFh 100000h-11FFFFh 0E0000h-0FFFFFh 0C0000h-0DFFFFh 0A0000h-0BFFFFh 080000h-09FFFFh 060000h-07FFFFh 040000h-05FFFFh 020000h-03FFFFh 000000h-01FFFFh

Figure 7. M29W320D Block Addresses (x16)

M29W320DT Top Boot Block Addresses (x16) M29W320DB Bottom Boot Block Addresses (x16)

1FFFFFh 8 KWord 1FE000h 1FDFFFh 4 KWord 1FD000h 1FCFFFh 4 KWord 1FC000h 1FBFFFh 16 KWord 1F8000h 1F7FFFh 32 KWord 1F0000h

1FFFFFh 32 KWord 1F8000h 1F7FFFh 32 KWord 1F0000h Total of 63 32 KWord Blocks

00FFFFh 32 KWord 008000h 007FFFh 16 KWord Total of 63 32 KWord Blocks 004000h 003FFFh 4 KWord 003000h 002FFFh 4 KWord 002000h 001FFFh 8 KWord 000000h

00FFFFh 32 KWord 008000h 007FFFh 32 KWord 000000h

AI07503

10/21

AN1557 - APPLICATION NOTE

COMMAND INTERFACE This section describes the commands used in both the Standard Flash and LightFlash families. Table 5. Shared Commands
Length Bus Write Operations 1st Add X 555 555 555 555 555 Data F0 AA AA AA AA AA 2AA 2AA 2AA 2AA 2AA 55 55 55 55 55 X 555 555 555 555 F0 90 A0 80 80 PA 555 555 PD AA AA 2AA 2AA 55 55 BA 555 30 10 2nd Add Data Add 3rd Data Add 4th Data Add 5th Data Add 6th Data Command

1 Read/Reset 3 Auto Select Word Program/ Program Block Erase Chip Erase 3 4 6+ 6

Note: X Dont Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.

Shared Commands Read/Reset Command. The Read/Reset command returns the memory to Read mode. This command is the same for both families. The Read/Reset command is executed regardless of the value of VPP (VIH, VIL or VHH) in the LightFlash devices. Auto Select Command. The Auto Select command is used to read the Manufacturer Code and the Device Code. The Auto Select command is executed regardless of the value of VPP (VIH, VIL or VHH) in the LightFlash devices. Table 6 gives the codes for all the devices. Word Program/ Program Command. The basic Program command is referred to as Word Program for LightFlash and Program for Standard Flash. The command sequence is identical for both sets of devices however for the LightFlash VPP must be set to VHH. If VPP is at VIL or VIH the command will be refused and the the device will automatically revert to read mode. Block Erase Command. The command sequence is identical for both sets of devices. In the Standard Flash devices the Block Erase command can be used to erase one or more blocks. In the LightFlash devices the command erases only one block at a time and VPP must be set to VHH. If VPP is at VIL or VIH the command will be refused and the the device will automatically revert to read mode. Table 6. Devices Codes
Device M29KW016E M29KW032E M29W160DT (Top) M29W160DB (Bottom) M29W320DT (Top) M29W320DT (Bottom) Code 88ABh 88ACh 22C4h 2249h 22CAh 22CBh

11/21

AN1557 - APPLICATION NOTE

Special Command For LightFlash Multiple Word Program Command. The Multiple Word Program command is an additional Program command that can be used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time. VPP must be set to VHH during Multiple Word Program. If VPP is set to either VIL or VIH the command will be ignored, the data will remain unchanged and the device will revert to Read/Reset mode. It has four phases: the Setup Phase to initiate the command, the Program Phase to program the data to the memory, the Verify Phase to check that the data has been correctly programmed and reprogram if necessary and the Exit Phase. Table 7 shows the Multiple Word Program command sequence and Figure 8 shows the flowchart. Refer to the LightFlash datasheets for a complete description of this command. The Multiple Word Program command is only available on the LightFlash devices. Table 7. Multiple Word Program Command
Length Bus Write Operations 1st Add 555 PA1 Data AA PD1 2nd Add 2AA PA1 Data 55 PD2 3rd Add 555 PA1 Data 20 PD3 4th Add PA1 PA1 Data PD1 PD4 5th Add PA1 PA1 Data PD2 PD5 Final -1 Add PA1 PA1 Data PAn PAn Final Add NOT PA1 NOT PA1 Data X X Phase

Program Verify

3+n +1 n+1

Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Dont Care, n = number of Words to be programmed.

12/21

AN1557 - APPLICATION NOTE

Figure 8. LightFlash Multiple Word Program Flowchart
Setup Phase Start Write AAh Address 555h Read Status Register Verify Phase

(tMWP-TRAN(1))
Write 55h Address 2AAh DQ0 = 0? YES Write 20h Address 555h Write Data1 (PD1) Start Address (PA1) NO

Read Status Register NO Setup time exceeded? YES NO DQ6 toggling? YES

Read Status Register NO DQ0 = 0? YES Write Data 2 (PD2) Address in Start Block NO Word program time exceeded? YES

(tMWP-SETUP(1))
NO

(tMWP-PROG(1))

EXIT (setup failed)

DQ0 = 0? YES

Program Phase

Write Data1(PD1) Start Address (PA1)

Read Status Register NO

Read Status Register

DQ0 = 0? YES

NO

Word program time exceeded? YES

(tMWP-PROG(1))

DQ0 = 0? YES

NO Write Data n (PDn) Address in Start Block

Write Data 2 (PD2) Address in Start Block

Read Status Register NO

Read Status Register

NO DQ0 = 0? YES

Word program time exceeded? YES

DQ0 = 0? YES

NO Write XX Any Address NOT in Start Block

(tMWP-PROG(1))
Read Status Register

Exit Phase

Write Data n (PDn) Address in Start Block Read Status Register Read Status Register DQ6 toggling? DQ0 = 0? YES Write XX Any Address NOT in Start Block NO NO YES

YES

DQ5 = 1 DQ4 = 0?

NO

Fail error

Fail, VPP error

(tMWP-END(1))

Write F0h Address XX

Exit (read mode)

AI05554c

Note: 1. Refer to datasheet for timings.

13/21

AN1557 - APPLICATION NOTE

Further Commands on M29W160D/320D Unlock Bypass Commands (Unlock Bypass, Unlock Bypass Program, Unlock Bypass Reset). The Unlock Bypass commands are a set of commands used to speed up the Program access time on the M29W160D/320D devices. They allow a single word to be programmed with a reduced number of Bus Write operations. They are typically used in applications where the Bus Write operations used to issue the command can considerably increase the programming time. See Table 8 for the command sequence. Refer to the datasheets for more details. The Unlock Bypass commands are not available on the LightFlash devices. Erase Suspend and Erase Resume. The M29W160D/320D devices feature an Erase Suspend command that can be used to temporarily suspend a Block Erase operation. The Erase Resume command is used to restart the Erase operation. Refer to Table 8 for the command sequence. Read CFI Query. The M29W160D/320D devices support the Common Flash Interface (CFI), a JEDEC approved and standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The Read CFI Query command is used to read data from the Common Flash Interface (CFI) Memory Area. Refer to Table 8 for the command sequence. The Common Flash Interface is not supported on the LightFlash devices. Table 8. Further Commands
Length Bus Write Operations 1st Addr AAA X X X X AA Data AA A0 90 B0 30 98 2nd Addr 555 PA X Data 55 PD 00 3rd Addr AAA Data 20 4th Addr Data 5th Addr Data 6th Addr Data Command

Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Erase Suspend Erase Resume Read CFI Query

3 2 2 1 1 1

Note: X Dont Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.

14/21

AN1557 - APPLICATION NOTE

STATUS REGISTER Both sets of devices feature a Status Register which provides information on the current or previous Program or Erase operation. The various bits convey information about the status and any errors of the operation. They are output on DQ0-DQ7. As a result of the different command sets used the Status Registers differ for the Standard Flash and LightFlash devices. Tables 9 and 10 show the Status Register bits for each set of devices, refer to the datasheets for more detailed descriptions. For LightFlash devices the VPP pin must be kept at VHH, to read the Status Register during Program and Erase operations. Data Polling Bit (DQ7) The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation. The Data Polling Bit is output on DQ7 when the Status Register is read. On the LightFlash devices the Data Polling Bit is not available during a Multiple Word Program operation. On the M29W160D/320D devices, the Data Polling Bit also gives information on the status of an Erase Suspend operation. Toggle Bit (DQ6) The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation. The Toggle Bit is output on DQ6 when the Status Register is read. On the M29W160D/320D devices, the Data Polling Bit also gives information on the status of an Erase Suspend operation and on the protection status of the blocks. Error Bit (DQ5) The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to 1 when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. VPP Status Bit (DQ4) (only for LightFlash) The VPP Status Bit can be used to identify if any Program or Erase operation has failed due to a VPP error. If VPP falls below VHH during any Program or Erase operation, the operation aborts and DQ4 is set to 1. If VPP remains at VHH throughout the Program or Erase operation, the operation completes and DQ4 is set to 0. DQ4 is reserved on the M29W160D/320D devices. Erase Timer Bit (DQ3) The Erase Timer Bit can be used to identify the start of the Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to 1. The Erase Timer Bit is output on DQ3 when the Status Register is read. On the M29W160D/320D devices, the Erase Timer Bit is also useful to monitor the Program/Erase Controller status when the Block Erase command is used to erase more than one block at a time. Alternative Toggle Bit (DQ2) The Alternative Toggle Bit can be used to monitor the Program/Erase controller during Block and Chip Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. It provides information on the block being erased (note that on the M29KW016E only one block can be erased at a time with the Block Erase command) or a Block Erase error.

15/21

AN1557 - APPLICATION NOTE

On the M29W160D/320D devices, the Alternative Toggle Bit is also useful to monitor the Chip Erase operation. It also provides information on the Erase Suspend status of the blocks when accessing the memory array in read mode. Refer to the datasheet for more detailed information. Multiple Word Program Bit (DQ0) (only for LightFlash) The Multiple Word Program Bit can be used to indicate whether the Program/Erase Controller is active or inactive during Multiple Word Program. When the Program/Erase Controller has written one Word and is ready to accept the next Word, the bit is set to 0. Table 9. LightFlash Status Register Bits
Operation Word Program Word Program Error Block/ Chip Erase Erase Error Condition Any Address VPP = VHH VPP < VHH Any Address VPP = VHH VPP < VHH P/E.C. active Multiple Word Program P/E.C. inactive, waiting for next Word VPP = VHH VPP < VHH DQ7 DQ7 DQ7 DQ7 0 0 0 DQ6 Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle DQ5 0 1 1 0 1 1 0 0 1 1 DQ4 0 1 0 1 0 1 DQ3 1 1 1 DQ2 Toggle Toggle Toggle DQ0 1 0 1 1 RB 0 0 0 0 0 0 0 1 0 0

Multiple Word Program Error

Table 10. M29W160D/320D Status Register Bits

Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Non-Erasing Block Erasing Block Erase Suspend Non-Erasing Block Good Block Address Erase Error Faulty Block Address 0 Toggle 1 1 Toggle 0 0 Data read as normal Toggle 1 1 No Toggle 1 0 0 1 Toggle No Toggle 0 0 1 No Toggle Toggle 0 1 Address Any Address Any Address Any Address Any Address Erasing Block Non-Erasing Block Erasing Block DQ7 DQ7 DQ7 DQ7 0 0 0 0 DQ6 Toggle Toggle Toggle Toggle Toggle Toggle Toggle DQ5 0 0 1 0 0 0 0 DQ3 1 0 0 1 DQ2 Toggle Toggle No Toggle Toggle RB 0 0 0 0 0 0 0

16/21

AN1557 - APPLICATION NOTE

WRITE PROTECTION The LightFlash and M29W160D/320D devices use different methods of protection to prevent any operation from modifying the data stored in the memories. The LightFlash devices use the VPP pin to protect the memory. If VPP is kept in a low voltage range (0V to 3.6V) VPP is seen as a Write Protect pin. In this case a voltage lower than VHH gives an absolute protection against Program or Erase, while VPP in the range of VHH enables these functions. Individual block protection is not possible on the LightFlash devices. For more details refer to the LightFlash datasheets. On the M29W160D/320D devices each block can be separately protected against accidental Program or Erase operations. Protected blocks can be unprotected to allow data to be changed. There are three different techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/ Block Temporary Unprotection pin, RP, (see signal description above). Refer to Application Note AN1122 for more detailed information.

17/21

AN1557 - APPLICATION NOTE

AC AND DC PARAMETERS AC Characteristics The AC Characteristics are similar for the LightFlash and Standard Flash devices. The main differences are related to the signals that are specific to each device (see Signal Descriptions section). The devices are available in different speed classes. The LightFlash devices are available with 90 and 110ns read access times, whereas the M29W160D/320D devices are available with 70 and 90ns read access times. DC Characteristics Most of the DC characteristics are identical for the M29W160D/320D and LightFlash devices, see Table 11, for the DC Characteristics of both sets of devices. Table 11. DC Characteristics M29W160D/320D and LightFlash
Device Symbol ILI ILO ICC1 Identical for both devices ICC2 ICC3 VIL VIH VOL VOH VLKO M29W160D/320D(1) LightFlash VHH IHH1 IHH2 Parameter Input Leakage Current Output Leakage Current Supply Current (Read) Supply Current (Standby) Supply Current (Program/Erase) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Program/Erase Lockout Supply Voltage VPP Program/Erase Voltage VPP Current (Read/Standby) VPP Current (Program/Erase) VPP = VHH P/E.C. Active IOL = 1.8mA IOH = 100 A VCC 0.4 1.8 11.4 2.3 12.6 100 10 Test Condition 0V VIN VCC 0V VOUT VCC E = VIL, G = VIH, f = 6MHz E = VCC 0.2V, RP = VCC 0.2V P/E.C. active 0.5 0.7VCC Min Max 1 1 10 100 20 0.8 VCC +0.3 0.45 Unit

A A
mA

A
mA V V V V V V

A
mA

VID

Identification Voltage

11.5

12.5

IID

Identification Current

A9 = VID

100

Note: 1. On M29W160D/320D devices special bus operations are available to read the electronic signature and to apply and remove block protection. They are intended for programming equipment and require VID applied on certain pins.

18/21

AN1557 - APPLICATION NOTE

PROGRAM AND ERASE TIMES Table 12 compares the Program and Erase times for all of the devices. Note the considerable time saved for programming (Multiple Word Program) and erasing on the LightFlash memories. Table 12. Program, Erase Times and Program, Erase Endurance Cycles
Parameter Device 16Mb LightFlash 32Mb Chip Erase 16Mb Standard Flash 32Mb Block Erase LightFlash (128 KWords) Standard Flash (32 KWords) LightFlash Program (Word) Standard Flash 32Mb Accelerated Program (Word) Standard Flash 16Mb LightFlash Chip Program (Word by Word) Standard Flash 32Mb Chip Program (Multiple Word) Program/Erase Cycles (per Block) 16Mb LightFlash 32Mb LightFlash Standard Flash 10,000 100,000 4 35 s cycles cycles 20 2 100 35 s s 32Mb 16Mb 18 13 14 35 60 s s 10 8 9 200 150 35 s s s 16Mb 40 1.5 0.8 9 13 14 40 200 6 6 250 200 s s s s s 29 34 120 s 21 25 120 s Min Typ (1) 11 Typical after 10k W/E Cycles(1) 25 Max 120 Unit s

19/21

AN1557 - APPLICATION NOTE

CONCLUSION The LightFlash memories are optimized for basic code storage and are ideal for DVD applications, where the reprogramming feature is not required. Taking into consideration the points highlighted in this application note, the new LightFlash memories can be designed-in to be compatible with the M29W160D/320D Industry Standard Flash memories. By using LightFlash memories considerable time can be saved for Program and Erase operations compared with Standard Flash memories.

REVISION HISTORY Table 13. Document Revision History

Date 12-Sep-2002 Version 1.0 First issue. Revision Details

20/21

AN1557 - APPLICATION NOTE

If you have any questions or suggestion concerning the matters raised in this document please send them to the following electronic mail address:

ask.memory@st.com

(for general enquiries)

Please remember to include your name, company, location, telephone number and fax number.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics LightFlash is a trademark of STMicroelectronics All other names are the property of their respective owners 2002 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com

21/21