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Hz input voltage noise at 10KHz. Another example is the opa725 from Texas
1
Current
Voltage
Tunnelling Current Silicon Nitride
Silicon
Metal
Current Current
Voltage Voltage
Tunnelling Current Silicon Nitride
Silicon
Metal
Figure 1.1: Nanopore gene sequencing
Instruments[5], which has 10nV/
Hz [9] at
frequencies in the MHz range.
In this research, special circuit techniques are exploited to reduce both thermal
and icker noise in a CMOS operational amplier designed as a current detector capable
of operating in the frequency range of 1-10MHz. The unity gain bandwidth and DC gain
are maximized. Since the untrimmed DC offset of a CMOS operational amplier can be
up to 20mV , larger than that of bipolar counterpart, a digital trimming method has been
investigated and implemented to reduce the DC offset voltage. The amplier design is
based on a 0.35m CMOS process operated with a 3.3V supply voltage. This amplier
has applications to other systems requiring low levels of current detection.
3
thermal Noise
corner frequency
flicker Noise
(log scale)
) log( 20
2
n
v
c
f f
thermal Noise
corner frequency
flicker Noise
(log scale)
) log( 20
2
n
v
c
f f
Figure 1.2: Typical input-referred voltage noise PSD for a MOSFET
1.3 Thesis Organization
Chapter 1 introduces the research background and problem being addressed.
Chapter 2 describes the various noise sources associated with MOSFETs. For
each noise source a small-signal model is provided. Then the noise performance is ana-
lyzed for the basic operational ampliers with four different loads: current mirror load,
resistor load, diode-connected load and active current source load. Their limitations for
further noise reduction are analyzed.
Chapter 3 introduces a new circuit topology for minimizing noise. Its noise per-
formance is analyzed and the techniques of noise reduction are described and compared
with those basic operational ampliers presented in Chapter 2 and the folded cascode
differential pair. Because of the relatively large offset voltage associated with CMOS
operational ampliers, a digital offset trimming method is also described in chapter
three.
Chapter 4 describes the noise measurement technique. The test circuit is pro-
vided. Some test results are provided.
Chapter 5 presents a low noise operational amplier with a cascode compensa-
tion scheme, which result in an improved PSRR.
4
Chapter 6 summarizes the conclusions for the design and suggestions for future
work are provided.
5
CHAPTER 2
Noise in MOSFETs and Basic CMOS Operational Ampliers
This chapter provides an overview of noise sources in MOSFETs. The noise
performance of four basic CMOS operational ampliers is analyzed. The limiations of
noise reduction techniques for these basic ampliers are discussed.
2.1 Noise Sources in MOSFETs
The noise sources in MOSFETs include: (a) thermal noise introduced by the
channel; (b) icker noise from the channel[10][11]; (c) thermal noise introduced by the
polysilicon gate resistance[12]; (d) thermal noise introduced by the source/drain resis-
tance and (e) thermal noise instroduced by the distributed substrate resistance[13]. In
the design of a low-noise operational amplier, wide transistors are typically chosen for
the input pair and there are lots of contacts connected to the source and drain, therefore
the thermal noise associated with the source/drain resistances can be neglected[14].
2.1.1 Thermal noise in the channel
Thermal noise is generated by the random motion of carriers in the channel[10]
which introduces uctuations, and therefore noise in the drain current. When a MOS-
FET is biased in the active region, this noise source can be represented by a current
noise generator connected from the drain to source as shown in Figure 2.1(a). The PSD
of this current noise generator is i
2
d,thermal
, which is described by
i
2
d,thermal
= 4kT
2
3
g
m
(2.1)
where k is Boltzmanns constant, T is the temperature in Kelvin, and g
m
is the small-
signal transconductance from the gate to the channel.
6
2
,thermal d
i
2
,thermal d
i
(a)
2
,thermal d
v
2
,thermal d
v
(b)
Figure 2.1: MOSFET noise model: a) Model of thermal noise in the channel, b) Input-
referred voltage noise model
To compare the noise performance of the different circuits, the concept of input-
referred noise is introduced. Input-referred noise is a source at the circuit input which
represents the effect of all noise sources in the circuit. It is ctitious and cannot be
measured in the real circuit. For a MOSFET, the current noise source introduced by the
channel is referred back to the gate by dividing the PSD of the current noise generator
by the square of the MOSFET transconductance g
m
. This results in an input-referred
voltage noise source which is connected in series with the gate as shown in Figure 2.1(b).
Its approximate PSD is given by:
v
2
d,thermal
= 4kT
2
3g
m
. (2.2)
Minimizing the channel thermal noise of a MOSFET is straightforward from the above
formula: the small-signal transconductance must be maximized. This can be achieved
by using a large DC bias current and having a large width to length (W/L) ratio for the
device.
2.1.2 Flicker noise in the channel
Flicker noise has been observed in all kinds of devices, from metal lm resistors
to semiconductor devices and even chemical batteries [15]. The MOSFET has one of
the highest PSD of icker noise among all active devices. Its precise origin has not yet
been identied unequivocally. One popular explanation is that in a MOSFET, current
7
ows near the surface between SiO
2
gate oxide and the crystalline silicon substrate.
The silicon crystal terminates at this Si/SiO
2
interface, producing many unoccupied
dangling energy bonds [14]. As charge carriers move along this surface, they are trapped
and released by those energy bonds randomly and introduce icker noise in the drain
current. The PSD of the noise depends inversely on the frequency and the input-referred
icker noise model[16] is given by:
v
2
i,flicker
(f) =
KF
2C
2
ox
WL
1
f
(2.3)
where
=carrier mobility in the channel;
C
ox
=capacitance per unit area of the gate oxide;
W=channel width;
L=channel length;
f=frequency;
KF=icker noise coefcient which is a process-dependant factor on the order of
10
28
F A and can be different for NMOS and PMOS devices. In the 0.35m process
used in this study, KF for the NMOS device is less than that of PMOS device.
From the Equation 2.3, the PSD of the icker noise is inversely proportional to
the active gate area. Therefore devices with large gate areas are chosen to reduce the
icker noise of the MOSFET. Input-referred icker noise is often modeled by connecting
a noise voltage source in series to the gate of a MOSFET like that shown in Figure 2.1(b).
2.1.3 Noise of polysilicon gate resistance
The thermal noise and icker noise in the channel are the two main sources of
noise in MOSFETs. But for a low-noise amplier design, other noise sources need to
be considered. One of these is the noise introduced by the resistance of the polysilicon
gate. The gate of modern CMOS device is made of polysilicon material often with a
8
silicided surface layer instead of metal. However, the polysilicon gate has its drawback,
in that a polysilicon silicided gate is more resistive than metal [12], and therefore more
noisy. For example, a silicided polysilicon gate sheet resistance is about 7/2. For
a transistor with a W/L ratio of 10/1, the noise density from the gate is approximately
1.077nV/
Hz. The sheet resistance of aluminum is about 0.05/2 and the noise
density of aluminum with the same aspect ratio is about 0.0288nV/
Hz, which is
negligible when compared to that of a polysilicon gate. In low-noise amplier design,
wide transistors are adopted for the input pair and the noise contribution from the gate
can be reduced by proper layout.
When the resistance of the gate is calculated, only effective resistance is consid-
ered. The effective resistance of polysilicon gate is actually less than the multiplication
of the technologys sheet resistance by the aspect ratio of the gate. This is because the
gate resistance of a MOSFET is a distributed resistance[12] and its effective value for
the gate when contacted at only one end as shown in Figure 2.2(a) is given by:
R
G
=
1
3
R
SH,G
W
L
(2.4)
where R
SH,G
is the gate polysilicon sheet resistance with the typical value of 7/2 for
a silicided polysilicon gate. If both ends of the gate are connected together, like that in
Figure 2.2(b), the gate resistance becomes:
R
G
=
1
12
R
SH,G
W
L
(2.5)
The above equation works for a single-nger device. If the device consists of
multiple ngers such as that shown in Figure 2.2(c), then the overall gate resistance is
given by
R
G
=
1
3
R
SH,G
W
L
1
N
(2.6)
9
(a) (b)
(c) (d)
Figure 2.2: Reduction of gate noise through layout, a) single-nger MOSFET, b) single-
nger MOSFET with contact at both ends, c) multiple-nger MOSFET and d) multiple-
nger MOSFET with contacts at both ends
where N is the number of ngers. If all of the ngers are connected at both ends as
shown in Figure 2.2(d), then the factor 1/3 should be replaced by 1/12 such that:
R
G
=
1
12
R
SH,G
W
L
1
N
(2.7)
The noise spectral density associated with the gate resistance is then given by:
v
2
g,thermal
= 4kTR
G
(2.8)
To reduce the thermal noise generated by the gate resistance, the transistor is laid-out in
a multi-nger version with both ends of the gate connected together.
2.1.4 Noise from the distributed substrate resistance
Figure 2.3 shows the noise contribution from the substrate to the drain current
[13]. The substrate has a distributed resistance and therefore generates thermal noise
10
2
,thermal sub
v
sub
R
2
,thermal sub
v
sub
R
Figure 2.3: Contribution mechanism of substrate noise to the drain current
v
2
sub,thermal
that can be approximated by:
v
2
sub,thermal
= 4kTR
sub
(2.9)
where R
sub
is substrate distributed resistance. This noise is amplied by the substrate
transconductance g
mb
and coupled to the drain current through a depletion capacitance,
such that the current noise can be represented by:
i
2
sub,thermal
= 4kTR
sub
g
2
mb
(2.10)
The direct way to reduce the noise fromsubstrate is to decrease g
mb
by increasing
the source bulk bias voltage or using a process with heavily doped substrate.
2.2 Noise Performance of the CMOS Differential Pair
To understand the main noise sources involved in an operational amplier, lets
consider the noise performance of a differential pair with a current mirror load shown in
Figure 2.4. The voltage gain of the amplier, A, measured from the gate of M
1,2
to the
11
1
M
2
M
3
M
4
M
DD
V
SS
I
out
V
1
M
2
M
3
M
4
M
DD
V
SS
I
out
V
(a)
1
M
2
M
3
M
4
M
SS
I
2
1 n
v
2
2 n
v
2
3 n
v
2
4 n
v
DD
V
out
V
1
M
2
M
3
M
4
M
SS
I
2
1 n
v
2
2 n
v
2
3 n
v
2
4 n
v
DD
V
1
M
2
M
3
M
4
M
SS
I
2
1 n
v
2
2 n
v
2
3 n
v
2
4 n
v
DD
V
out
V
(b)
Figure 2.4: a) Differential pair with current mirror load, b) noise model of a)
output V
out
is described by the following equitation:
A = g
m2
r
o
=
2
_
(
n
C
OX
(W/L)
2
)
(
2
+
4
)
I
D2
(2.11)
where is is channel length modulation, is carrier mobility in the channel, C
ox
is the
capacitance per unit are of the gate oxide, W and L are MOSFETs width and length
respectively, I
D2
is the bias current of the input pair M
1
and M
2
.
The gain from the gate of M
3,4
to the output V
out
is g
m4
r
o
, where g
m2
and g
m4
are
transconductance of M
2
and M
4
, respectively, and r
o
is small-signal output resistance.
The output noise is given by:
v
2
no
(f) = 2(g
m2
r
o
)
2
v
2
n2
(f) + 2(g
m4
r
o
)
2
v
2
n4
(f) (2.12)
where v
n2
and v
n4
represent the noise from M
2
and M
4
respectively, which include all
those noise sources discussed above and are referred back to the gate of M
2
and M
4
.
12
This noise v
2
no
can be referred back to the ampliers input by dividing the
squared gain from the ampliers input to its output which results in
v
2
ni
(f) = 2v
2
n2
(f) + 2v
2
n4
(f)
_
g
m4
g
m2
_
2
= 2v
2
n2
(f) + 2v
2
n4
(f)
_
(W/L)
4
p
(W/L)
2
n
_
(2.13)
Assuming C
OX,n
= C
OX,p
= C
OX
, the icker noise and thermal noise of this structure
are given by the following two equations:
v
2
flicker
(f) =
KF
n
n
C
2
OX
W
2
L
2
f
_
1 +
KF
p
KF
n
_
L
2
L
4
_
2
_
(2.14)
v
2
thermal
=
16kT
3
_
2
n
C
OX
(W/L)
2
I
D2
_
_
1 +
p
(W/L)
4
n
(W/L)
2
_
_
(2.15)
where KF
n
is the icker noise coefcient of NMOS, KF
p
is the icker noise coefcient
of PMOS,
n
and
p
are carrier mobilities for both NMOS and PMOS respectively.
From the above equations, we nd that each MOSFET introduces both icker noise and
thermal noise. All CMOS voltage operational ampliers have at least two MOSFETs
as the input pair. The more MOSFETs in the circuit, the more noise is introduced.
From Equation 2.15, it is observed that large bias currents can be used to minimize
thermal noise at the cost of power dissipation and voltage gain A. The large bias current
also results in a large overdrive voltage for transistors M
3
and M
4
. The drain to source
voltage V
DS
of M
3
and M
4
has to be large enough to keep the transistors in the saturation
region. Hence
V
DS
> V
threshold
+V
overdrive
(2.16)
Therefore increasing the bias current reduces the voltage headroom at the output. For
the differential pair with current mirror load, it is clear from this analysis that optimizing
the noise performance involves a trade off with other parameters, including the DC gain
and power.
13
A1 A2
2
1
v
2
2
v
A1 A2 A1 A2
2
1
v
2
2
v
Figure 2.5: Two stage operational amplier with noise sources
Figure 2.5 shows a two stage operational amplier. The rst stage has a gain of
A1 and an output noise v
2
1
; the second stage has a gain of A2 and an output noise v
2
2
.
The total gain of the amplier is A = A
1
A
2
. The total output noise of the amplier is
v
2
total
= v
2
2
+A
2
2
v
2
1
(2.17)
When this noise is referred back to the input port, the input-referred noise is
v
2
i
=
v
2
2
A
2
2
A
2
1
+
1
A
2
1
v
2
1
(2.18)
Since the noise from the rst stage is amplied by the second stage, the noise of rst
stage is more important than that of the second stage. The larger the gain of rst stage
A
1
, the less important the noise contribution of second stage. However, the differential
pair with current mirror load has a disadvantage in that the DC gain is inversely propor-
tional to the bias current. The higher the bias current, the lower the DC gain of the rst
stage, which will make the noise from later stage more pronounced.
In this research, the differential pair with more than 4 cascode stages is not pre-
ferred because we used a 0.35m CMOS process with a working voltage of 3.3V. A
differential pair with more than 4 cascode stages will have a headroom problem. So, the
rst effort is to analyze some other basic differential pairs to see whether any of them
can provide a superior noise performance.
14
Differential pair with a resistive load:
The differential pair with resistive load is shown in Figure 2.6(a). Its input-
referred noise is given by:
v
2
ni
= 8kT
_
2
3g
m
+
1
g
2
m
R
D
_
+
KF
n
n
C
2
OX
W
2
L
2
f
(2.19)
For low-noise design, a large bias current (even to the order of a few milliamps) is
needed and the resistor value has to be chosen to minimize thermal noise. The opera-
tional amplier with a large resistive load can reduce the voltage headroom at the output.
Moreover, the gain of this structure is relatively low, which make the noise of the later
stages a larger issue.
Differential pair with a Diode-connected load:
An Differential pair with a diode-connected load is shown in Figure 2.6(b), and
the noise performance is given by Equation 2.14 and 2.15. This structure has the same
problems as the operational amplier with a resistive load. For low noise operational
amplier design, the bias current should be large and the drain-source voltage also needs
to meet Equation 2.16, which results in a small output voltage swing range. Also such a
structure has a small gain.
Differential pair with an active current source load:
The fully differential pair with active current source load is shown in Figure
2.6(c). The structure has a higher output common mode range than those ampliers dis-
cussed above since its load drain-source voltage only need to meet the requirement of
V
DS
> V
overdrive
, a threshold voltage less than that of the differential pair with a current
15
1
M
2
M
1
R
2
R
DD
V
SS
I
1
M
2
M
1
R
2
R
DD
V
SS
I
(a)
1
M
2
M
3
M
4
M
DD
V
SS
I
1
M
2
M
3
M
4
M
DD
V
SS
I
(b)
CMFB
1
M
2
M
3
M
4
M
DD
V
SS
I
CMFB
1
M
2
M
3
M
4
M
DD
V
SS
I
(c)
1
M 2
M
3
M
4
M
SS
I
5
M
6
M
7
M
8
M
A
B
In
+ In
dd
V
2 b
V
4 b
V
Out
1
M 2
M
3
M
4
M
SS
I
5
M
6
M
7
M
8
M
A
B
In
+ In
dd
V
2 b
V
4 b
V
Out
(d) Folded-cascode differential pair
Figure 2.6: Four basic CMOS differential pairs, a) resistive load, b) diode-connected
load, c) active current source load and d) folded-cascode differential pair
16
mirror load and diode-connected structure. The larger headroom provided by this struc-
ture allows the input pair to sink more DC bias current than the other structures. The
input-referred noise density is also given by Equations 2.14 and 2.15. Therefore it has
the potential of the best noise performance among those introduced before. But such
a structure requires a Common Mode Feedback (CMFB) network to dene the output
common-mode level. Any mismatch in the CMFB circuit can introduce extra noise that
could outbalance the advantage of the fully differential structure.
Folded-cascode differential pair:
Figure 2.6(d) gives the structure of a folded cascode differential pair. This struc-
ture has the limitation of maximizing the input pairs bias current for a low noise design.
M
3
and M
4
source bias current for the input pair M
1
and M2, and the current mirror
load M
7
and M
8
. When the bias current of M
1
and M
2
is maximized, the bias current
of M
3
and M
4
is maximized as well. This will reduce the DC voltage level at the drain
of M
3
and M
4
. This reduced DC voltage level will reduce the voltage headroom at the
drain of M
6
, which is especially true when the length of M
3
and M
4
is chosen larger
than normal in a low noise operational amplier design.
From the above discussion, we can appreciate the trade-offs between noise,
power dissipation, voltage headroom when designing a low noise operational ampli-
er. Chapter three describes a new amplier structure which combines the features of
the fully differential pair with active current source load with an amplier with a current
mirror load. That structure has the potentiality of improved noise performance.
17
CHAPTER 3
Novel Structure for a Low Noise Operational Amplier using
MOSFETs
This chapter proposes a new operationality amplier structure offering the po-
tential of better noise performance. The techniques used to reduce noise are described.
In Chapter 2, the noise limitations of the basic CMOS differential pair structure
were discussed. In this chapter a new structure shown in Figure 3.1 is proposed and
analyzed. This structure combines the merits of a fully differential pair with an active
current source load and an differential pair with a current mirror load. The active current
source M
3
and M
4
can source the maximum current for the input pair to reduce thermal
noise. The current mirror M
7
and M
8
combine with the transconductance of the input
pair to dene the DC gain. A cascode stage, M
5
and M
6
, is introduced for the following
three reason:
1. This cascode stage can reduce the Miller effect, thereby increasing the bandwidth
of the amplier. The input pair (M
1
, M
2
) has a gate-drain parasitic capacitance
C
gd
. If there is no cascode stage, the gain A
miller
from input (M
1
, M
2
) to the drain
of M
7
and M
8
will be larger than 1, that is, A
miller
> 1. The Miller effect will
magnify the parasitic capacitance as A
miller
C
gd
, which will limit the ampliers
bandwidth. With the introduction of cascode stage M
5
and M
6
, the voltage at the
drains of M
1
and M
2
is xed, and the gain from the input to the source of M
5,6
is
reduced and therefore the parasitic capacitance at the gate of M
1,2
is minimized.
2. This cascode stage increase the output resistance looking into the drain of M
6
and
therefore increase the gain of this differential pair.
3. The cascode structure reduces the short channel variation of the input stage. In
describing the channel length modulation using the channel length modulation
18
DD
V
1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
SS
I
2 b
V
4 b
V
+
In
In
Out
DD
V
1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
SS
I
1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
SS
I
2 b
V
4 b
V
+
In
In
Out
Figure 3.1: Proposed structure of the low noise differential pair
parameter , we assume that the small-signal output impedance r
o
is constant.
This is not really true. This output impedance varies with the drain-source voltage.
When the drain-source voltage increases, the pinch-off point will move towards
source region resulting in a wider depletion region around the drain and a higher
r
o
. When the drain-source voltage decreases, a lower value of r
o
results. With the
cascode stage M
5,6
, the drain-source voltage of M
1,2
doesnt experience a large
variation and the small-signal resistance of M
1,2
remains almost constant.
Lets examine how the disadvantages of achieving low noise performance for
those differential pairs discussed in Chapter 2 are avoided in this new structure. In this
new structure, the bias current of the ampliers input pair is rationed between M
3,4
and M
7,8
. M
3,4
is sized to source most of the bias current. For example, if the bias
current of M
1,2
is chosen to be 3mA, I
3,4
of M
3,4
can be 2.85mA and I
7,8
can be set as
0.15mA. The common-mode level at the drain of M
3,4
is dened by the cascode stage
M
5,6
, instead of common mode feedback circuit used in the differential pair with active
current source load. To reduce the thermal noise, the large bias current of 3mA is chosen
19
1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
DD
V
0
M
2
1 n
v
2
2 n
v
2
3 n
v
2
4 n
v
2
5 n
v
2
6 n
v
2
7 n
v
2
8 n
v
2
0 n
v
1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
DD
V
0
M
2
1 n
v
2
2 n
v
2
3 n
v
2
4 n
v
2
5 n
v
2
6 n
v
2
7 n
v
2
8 n
v
2
0 n
v
Figure 3.2: Noise model of differential pair in Figure 3.1
for the input pair M
1,2
. This current is mainly provided by the active load M
3,4
. The
output of the common-mode level is dened by M
7,8
, which takes a very small current
and provides a wider output swing than that provided by a differential pair with a current
mirror load. In the analysis that follows, we show that this structure has the advantage
of increasing the small-signal gain without deteriorating the noise performance. The
large 3mA bias current results in the input pair M
1,2
with a high aspect ratio and a large
transconductance g
m
, these improves the bandwidth and other performances, like low
icker noise and high DC gain.
3.1 Noise Analysis of New Structure
Figure 3.2 shows the noise model for the structure in Figure 3.1. The noise con-
tribution of each gate is referred back to their own gate input, like the noise contribution
of M
3
, which is represented by v
2
n3
connected in series to its gate. In the following noise
calculation, symmetry is assumed, such that the noise contributions of M
1
, M
3
, M
5
and
M
7
are the same as those of M
2
, M
4
, M
6
and M
8
.
20
4 2
|| r r
1 6
v g
m
2 2 n m
v g
8
r
1
v
2 no
v
2 n
v
4 2
|| r r
1 6
v g
m
2 2 n m
v g
8
r
1
v
2 no
v
2 n
v
Figure 3.3: Small-signal noise model for input stage M
1,2
3.1.1 The noise contribution of the input stage M
1,2
The small-signal model shown in Figure 3.3 is for the calculation of M
2
s noise
contribution, where the parasitic capacitances are omitted for simplicity. From this
model, we nd the output noise from M
2
is:
v
no2
= g
m2
r
8
v
n2
g
m2
r
o
v
n2
(3.1)
where r
o
is the small-signal output resistance of the circuit in Figure 3.1.
3.1.2 The noise contribution of the active current source load M
3,4
The small-signal model to calculate the noise contribution of the active current
source load stage is the same as that in Figure 3.3 with v
n2
and g
m2
replaced with v
n4
and g
m4
. So the output noise from the active current load M
4
is:
v
no4
= g
m4
r
8
v
n4
g
m4
r
o
v
n4
(3.2)
21
8
r
1 6
v g
m
8 8 n m
v g 4 2
|| r r
1
v
8 no
v
8 n
v
8
r
1 6
v g
m
8 8 n m
v g 4 2
|| r r
1
v
8 no
v
8 n
v
Figure 3.4: Small-signal noise model for current mirror load M
7,8
3.1.3 The noise contribution of current mirror load M
7,8
The small signal model for noise contribution of the current mirror load is shown
in Figure 3.4. The noise contribution from M
8
is approximately:
v
no8
= g
m8
r
8
v
n8
g
m8
r
o
v
n8
(3.3)
3.1.4 The noise contribution of cascode stage M
5,6
The cascode stages small-signal noise model is shown in Figure 3.5. Here
v
gs6
= v
n6
v
1
. The output noise from this stage is given by:
4 2
|| r r
1
v
6
r
6 6 gs m
v g
8
r
6 no
v
6 n
v
4 2
|| r r
1
v
6
r
6 6 gs m
v g
8
r
6 no
v
6 n
v
Figure 3.5: Small-signal noise model for the cascode stage M
5,6
22
v
no6
=
g
m6
r
6
r
8
r
6
+r
8
+g
m6
r
6
r
2
v
n6
r
8
r
2
v
n6
(3.4)
where v
n6
is noise contribution of M
6
referred back to its gate. The effective transcon-
ductance of M
6
according to Equation 3.4 is approximately 1/r
2
and is much smaller
than transconductance g
m6
of M
6
and g
m2
of M
2
. The operational ampliers small-
signal output resistance r
o
is close to r
8
. The noise generated by the cascade current
buffers and referred back to the ampliers input is v
ni5,6
=
1
g
m2
ro
r
8
r
2
v
n6
1
g
m2
r
2
v
n6
, and
is much smaller than those generated by input stage, active current and current mirror
loads, therefore it is omitted in the later noise analysis.
3.1.5 The noise contribution of current bias MOSFET M
0
M
0
provides the bias current for the input pair, and noise associated with this
transistor will modulate the bias current. Ideally, the active current source load M
3,4
will not see noise from M
0
since their gate voltage experience no change. So this noise
will run through the input pair M
1,2
and the cascade stage M
5,6
to the current mirror
load M
7,8
. The other observation is that the drains voltage of M
8
will track that of M
7
.
So, the noise from M
0
at the output (drain of M
8
) is equal to the noise at the drain of
M
7
. As a result, the small-signal model shown in Figure 3.6 can be used to analysis the
noise contribution of M
0
. The noise fromM
0
is approximately v
no0
=
g
m0
g
m7
v
n0
, and the
amount of noise referred back to the operational ampliers input is v
ni0
=
1
g
m2
ro
g
m0
g
m7
v
n6
.
This is a very small value when compared with other stages input referred noise due to
the large gain g
m2
r
o
from the input pair to the output.
23
1
v
0 0 n m
v g
0
r
1 1
v g
m
1
r
3
r
2
v
7
1
m
g
0 no
v
5
r
2 5
v g
m
1
v
0 0 n m
v g
0
r
1 1
v g
m
1
r
3
r
2
v
7
1
m
g
0 no
v
5
r
2 5
v g
m
Figure 3.6: Small-signal noise model for bias current source M
0
3.1.6 Total output noise
Combining all those noise models discussed above, the total output noise is given
by
v
2
no
(f) = v
2
no0
(f) + 2v
2
no2
(f) + 2v
2
no4
(f) + 2v
2
no6
(f) + 2v
2
no8
(f)
2(g
m2
r
o
)
2
v
2
n2
(f) + 2(g
m4
r
o
)
2
v
2
n4
(f) + 2(g
m8
r
o
)
2
v
2
n8
(f) (3.5)
The input referred noise is
v
2
ni
(f) = 2v
2
n2
(f) + 2v
2
n4
(f)
_
g
m4
g
m2
_
2
+ 2v
2
n8
_
g
m8
g
m2
_
2
= 2v
2
n2
(f) + 2v
2
n4
(f)
_
(W/L)
4
p
I
D4
(W/L)
2
n
I
D2
_
+ 2v
2
n8
(f)
_
(W/L)
8
p
I
D8
(W/L)
2
n
I
D2
_
(3.6)
The following two equations show the input referred icker noise and thermal noise for
this design respectively:
v
2
flicker
(f) =
KF
n
n
C
2
OX
W
2
L
2
f
_
1 +
KF
p
KF
n
_
L
2
L
4
_
2
I
D4
I
D2
+
KF
p
KF
n
_
L
2
L
8
_
2
I
D8
I
D2
_
(3.7)
v
2
thermal
=
16kT
3
_
2
n
C
OX
(W/L)
2
I
D2
_
_
1 +
p
(W/L)
4
I
D4
n
(W/L)
2
I
D2
+
p
(W/L)
8
I
D8
n
(W/L)
2
I
D2
_
_
(3.8)
24
3.2 Noise Reduction Techniques for this New Structure
From the above two equations, we nd there are three techniques that can be
used to reduce the noise:
1. Determination of the input pair type for M
1,2
2. Optimization of the bias current I
D2
of the input pair
3. Optimization of the sizes and aspect ratios of the MOSFETs
3.2.1 Determination of the input pair type for M
1,2
In this structure, NMOS should be chosen for the input pair M
1,2
for the follow-
ing three reasons:
1. The bandwidth we are dealing with is between 1MHz to 10MHz. Over this band-
width range, thermal noise is often dominant. Selecting a NMOS transistor for
the input pair reduces thermal noise according to Equation 3.8, since NMOS tran-
sistors have a lager mobility
n
(often 2 to 3 times) than PMOS transistors.
2. Flicker noise is still important in this design. In a submicron process, the corner
frequency could be greater than 1MHz. In Figure 1.2 we can see that as the
thermal noise oor is reduced, the corner frequency is increased. The icker
noise tail will overlap with the thermal noise oor. In the 0.35m CMOS process
used, the NMOS icker noise coefcient KF
n
is smaller than that of PMOS icker
noise coefcient KF
p
, which is helpful for achieving lower icker noise according
to Equation 3.7.
3. NMOS transistors have a higher transition frequency f
T
than PMOS transistors,
which help achieve a higher bandwidth.
25
3.2.2 Optimization of the bias current I
D2
of the input pair
To further reduce the thermal noise, the bias current I
D2
of the input pair can be
increased up to several milliamps in this new structure. With such large bias current,
the basic CMOS differential pair like the one with current mirror load can have good
noise performance but at the cost of gain and voltage headroom at the output. However,
for this new structure, the increased bias current does not deteriorate either the gain or
voltage headroom . This is one of the highlights of this new structure which is explained
in the DC gain section 3.3 below.
3.2.3 Optimization of the sizes and aspect ratios of MOSFETs
According to Equation 3.7, choosing a large size (WL)
2
for the input pair, and
making the channel length L of the active load M
3,4
and current mirror M
7,8
larger than
that of input pair M
1,2
can help to reduce the icker noise. The aspect ratio (W/L)
2
is chosen to be larger than (W/L)
4
and (W/L)
8
, so the second and third terms in the
bracket of Equation 3.8 is less than 1. This helps to reduce the thermal noise. After
those choices, we can nd that the input pair contributes most of the noise of both types.
The gate length L
1,2
of the input pair could increase or decrease icker noise
according to Equation 3.7. The optimum value is determined by:
v
2
flicker
L
2
= 0 L
2
=
KF
n
KF
p
_
1
L
2
4
I
D4
I
D2
+
1
L
2
8
I
D8
I
D2
_
(3.9)
When the gate lengths of M
3,4
and M
7,8
are rst chosen to be 2.1m to avoid a large
overdrive voltage, I
D2
and I
D4
chosen to be 3mA and 2.85mA respectively, the optimum
gate length of M
1,2
is found to be 0.7m as shown in Figure 3.7.
The simulated input-referred voltage noise performance of the circuit of Figure
3.1 using a 0.35m CMOS process is shown in Figure 3.8. The total noise level is
simulated to be 1.796nV/
Hz at 10MHz.
26
0 0.5 1 1.5 2 2.5 3
x 10
-6
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
x 10
-19
Input Gate Length (m)
N
o
i
s
e
L
e
v
e
l
(
v
2
)
X: 7e-007
Y: 2.873e-019
Figure 3.7: Optimum gate length of the input pair
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
0
1
2
3
4
5
6
7
8
9
x 10
-7
X: 1e+006
Y: 1.796e-009
Frequency(Hz)
n
o
i
s
e
l
e
v
e
l
(
v
/
(
H
z
)
)
X: 1e+007
Y: 1.184e-009
Figure 3.8: The noise performace of the circuit in Figure 3.1
27
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
0
0.5
1
1.5
2
2.5
3
x 10
-6
X: 1e+007
Y: 2.427e-009
Frequency(Hz)
n
o
i
s
e
l
e
v
e
l
(
v
/
(
H
z
)
)
X: 1e+006
Y: 2.306e-009
Figure 3.9: The noise performace of the circuit with PMOS as the input pair
Figure 3.9 shows the simulated noise level of the same structure when using
PMOS transistors as the input pair. The size, aspect ratio and bias current are all
the same as those in Figure 3.8. From this gure we conclude that the PMOS input
pair shows poorer noise performance: the noise level is 2.306nV/
Hz at 1MHz and
2.427nV/
Hz at 10MHz.
From the previous analysis, we nd that the current mirror load M
7,8
sources
a very small amount of bias current compared with the input pair. Thus,
I
D8
I
D2
1
20
,
I
D4
I
D2
and Equation 3.7 and 3.8 are reduced to:
v
2
flicker
(f)
KF
n
n
C
2
OX
W
2
L
2
f
_
1 +
KF
p
KF
n
_
L
2
L
4
_
2
_
(3.10)
v
2
thermal
16kT
2
_
2
n
C
OX
(W/L)
2
I
D2
_
_
1 +
p
(W/L)
4
n
(W/L)
2
_
_
(3.11)
From these two equations, we can nd that the four MOSFETs (M
1,2,3,4
) contribute most
of the noise in this new structure. Also from these two equations, we can nd that the
noise performance of this new structure is comparable with the differential pair with
active load, but it doesnt need CMFB circuit.
28
3.2.4 Noise performance of the folded-cascode differential pair
Figure 2.6(d) shows a folded-cascode differential pair. It has the same small-
signal model as that of Figure 3.1. And its icker and thermal noise are also represented
by Equation 3.7 and 3.8 respectively. But the new structure has better noise performance
than this folded-cascode differential pair. Assuming I
D2
, I
D4
and I
D8
are the bias cur-
rents of M
2
, M
4
and M
8
in Figure 3.1 respectively, and I
f
D2
, I
f
D4
and I
f
D8
are the bias
currents of M
2
, M
4
and M
8
in Figure 2.6(d) respectively, we nd I
D2
= I
D4
+I
D8
and
I
f
D2
= I
f
D4
I
f
D8
. If we choose I
D2
= I
f
D2
, then I
D4
< I
f
D4
and the drain of M
4
in
Figure 2.6(d) will have smaller DC level than that of the drain of M
4
in Figure 3.1. This
smaller DC level in folded-cascode differential pair results in smaller voltage headroom
at the drain of M
6
. This is especially true when a long gate length is chosen for M
3
and
M
4
and a large bias current is chosen for the input pair in a low noise design. Therefore,
this folded-cascode structure has smaller output swing. Lets think about it in another
way, if we apply the same power to both the circuits in Figure 3.1 and Figure 2.6(d),
which means I
D2
= I
f
D4
> I
f
D2
, then new structure has better noise performance since
its input pair has larger bias current which results in lower thermal noise. Hence, the
new structure offers an improvement over the standard folded cascode structure.
3.3 DC Gain
The small-signal DC gain of the differential pair of Figure 3.1 is given by:
A
1
= g
m2
((g
m6
r
o6
(r
o2
r
o4
r
1a
)) r
o8
) (3.12)
where r
oa
is the small signal resistance of the auxiliary port consisting of M
1a
and M
2a
as shown in Figure 3.10. This auxiliary port is used to reduce offset and its detailed
analysis is given in the offset reduction section 3.6 below. Even though the large bias
current reduces r
o2
and r
o4
, the introduction of the cascode stage increases the output
29
1
M
2
M
3
M
4
M
5
M
6
M
7
M 8
M
DD
V
1 SS
I
2 SS
I
a
M
1
a
M
2
2 b
V
4 b
V
+ In In + Ina
Ina
Out
1
M
2
M
3
M
4
M
5
M
6
M
7
M 8
M
DD
V
1 SS
I
2 SS
I
a
M
1
a
M
2
2 b
V
4 b
V
+ In In + Ina
Ina
Out
Figure 3.10: Modied structure of the operational amplier with an auxiliary port
resistance looking into the drain of M
6
and makes the r
o8
the dominant parameter in
determining the DC gain in Equation 3.12. r
o8
can be approximated by r
o8
1
I
D8
and
can be increased in two ways. First the channel length of the transistors M
7,8
can be
increased to reduce the length modulation parameter which is inversely proportional
to the MOSFET channel length for the rst order approximation [14]. In this design, the
current is radioed between the active load M
3,4
and current mirror M
7,8
. So the second
way to increase r
o8
is to minimize the current I
D8
in M
7,8
. Increasing the bias current I
D2
increases the transconductance g
m2
and therefore DC gain. The active load M
3,4
sources
this extra bias current through the input pair M
1,2
, and therefore the thermal noise is
reduced as described by Equation 3.8. By now it can be observed from the previous
discussion that M
1
, M
2
, M
3
and M
4
are primarily responsible for noise reduction, while
M
1
, M
2
, M
5
, M
6
, M
7
and M
8
are responsible for the DC gain. The DC gain and noise,
which is often a trade-off between noise level and gain in differential pair with current
mirror load, can be optimized independently for this proposed structure .
30
1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
DD
V
a
M
1 a
M
2
0
M
a
M
0
9
M
10
M 11
M
12
M
13
M
14
M
R
c
C
Out
1 b
I
2 b
I
3 b
I
4 b
V
5 b
I
+ In In
+
a
In
a
In 1
M
2
M
3
M
4
M
5
M
6
M
7
M
8
M
DD
V
a
M
1 a
M
2
0
M
a
M
0
9
M
10
M 11
M
12
M
13
M
14
M
R
c
C
Out
1 b
I
2 b
I
3 b
I
4 b
V
5 b
I
+ In In
+
a
In
a
In
Figure 3.11: Two stage low noise low offset operational amplier
3.4 AC Performance
The common source conguration is chosen for the output stage of the opera-
tional amplier. Such a stage can achieve about 20-30 dB of gain. A Miller compen-
sation scheme is chosen to achieve reasonable phase margin. A two stage low noise
operational amplier incorporating the new structure for the differential pair is shown in
Figure 3.11. Sizes of the transistors, and the Miller compensation resistor and capacitor
are provided in Table 3.1.
M
1
816/0.7 M
6
66/0.7 M
0a
66/0.7 M
13
220/0.35
M
2
816/0.7 M
7
132/2.1 M
9
385/0.7 M
14
198/2.1
M
3
198/2.1 M
8
132/2.1 M
10
220/0.35 R 940
M
4
198/2.1 M
1a
105/0.7 M
11
408/0.7 C
c
5pF
M
5
66/0.7 M
1b
105/0.7 M
12
66/0.7
Table 3.1: Optimized devices size of the two-stage operational amplier
31
1
R
1
C
c
C
6
r
1 6
v g
m
2 9
v g
m
3
R
3
C
R
2
2 i m
v g
2
R
2
C
2
1 i m
v g
1
v
2
v
out
v
1
R
1
C
c
C
6
r
1 6
v g
m
6
r
1 6
v g
m
2 9
v g
m
3
R
3
C
R
2
2 i m
v g
2
R
2
C
2
1 i m
v g
1
v
2
v
out
v
Figure 3.12: Small signal model of the circuit in Figure 3.11
The small-signal model for the circuit in Figure 3.11 is given in Figure 3.12:
Here R
1
= r
2a
r
2
r
4
C
1
= C
gd2
+C
gd4
+C
gd2a
+C
gs6
R
2
= r
8
C
2
= C
gd6
+C
gd8
+C
gs9
R
3
= r
9
r
10
C
3
= C
gd9
+C
gd10
Analysis of ac small-signal model, after considerable algebra work and discard-
ing some minor parameters such as C
1
and C
2
, results in the following equation:
v
out
v
i
=
g
m2
g
m9
R
2
R
3
sg
m2
R
2
R
3
C
c
(1 g
m9
R)
1 +s(RC
c
+R
3
C
3
+g
m9
R
2
R
3
C
c
) +s
2
RR
3
C
c
C
3
(3.13)
With the assumption that the second pole is far larger than the dominant pole, the dom-
inant pole of above equation can be approximated by:
p
1
=
1
g
m9
R
2
R
3
C
c
. (3.14)
Since the DC gain of this amplier is:
A(0) = A
1
A
2
= (g
m2
((g
m6
r
o6
(r
o2
r
o4
r
2a
)) r
o8
)) g
m9
R
3
= g
m2
R
2
g
m9
R
3
(3.15)
32
and the unity gain bandwidth is still given by GBP = A(0)|p
1
| =
g
m2
Cc
The second dominant pole is:
p
2
g
m9
R
2
RC
3
. (3.16)
and the zero is:
z =
g
m9
C
c
(1 g
m9
R)
. (3.17)
For unity-gain stability, the magnitude of the second dominant pole should be greater
than the GBP such that:
|p
2
|
g
m9
R
2
RC
3
> GBP =
g
m2
C
c
. (3.18)
Therefore
C
c
>
g
m2
RC
3
g
m9
R
2
. (3.19)
From Equations 3.16 and 3.17, we can nd that the zero-nulling resistor R can control
the zero and second dominant pole positions and therefore change the phase margin.
One observation from Equation 3.19 is that in this low noise operational amplier de-
sign, the input transconductance can be larger than the transconductance of the output
driver. If R is chosen close to 1/g
m9
, then p
2
is maximized and stability is achieved with
a minimum C
c
.
For the values given in Table 3.1, the circuit of Figure 3.11 was simulated. The
simulated AC results and noise performance including parasitic resistances and capaci-
tances introduced by the layout are shown in Figure 3.13 and Figure 3.14 respectively.
Simulation results in Figure 3.13 show the DC gain of the design is around 120dB with
unity-gain bandwidth up to 380MHz. The phase margin is around 11
o
. The simulated
total input-referred noise level is lower than 2nV/
(
H
z
)
)
X: 1e+007
Y: 1.297e-009
Figure 3.14: Noise performance with parasitic resistances and capacitances
34
6 b
M
5 b
M
7 b
M
1 b
M
2 b
M
3 b
M 4 b
M
R
6 b
M
5 b
M
7 b
M
1 b
M
2 b
M
3 b
M 4 b
M
R
Figure 3.15: Self-biasing V
threshold
reference with start-up circuit
3.5 Bias Circuit
The bias network is an important component in the low noise amplier design.
The bias core is shown in Figure 3.15. The advantage of this bias circuit is that the
currents through M
b3,b4
are insensitive to the supply voltage to the rst order, which
means such circuit has superior PSRR performance. A combination of current- and
voltage-routing techniques [10] is used to reduce the mismatch and supply resistance.
The MOSFETs M
b5,b6,b7
consist of a start-up circuit with M
b5
being a long channel
device.
The entire bias network is shown in Figure 3.16. Cascode stages are imple-
mented to increase the output resistance and the values of the transistors are given in
Table 3.2.
3.6 Offset Reduction and Auxiliary Port
In general CMOS operational ampliers exhibit higher input offset voltage than
their BJT counterparts. The photolithography, ion implantation, etching and other process-
related factors can cause a mismatch in the threshold voltage V
t
and gain factor between
35
7 b
M
5 b
M
6 b
M
1 b
M
2 b
M
3 b
M
4 b
M
8 b
M
9 b
M
10 b
M
11 b
M
12 b
M
13 b
M
14 b
M
15 b
M
16 b
M
17 b
M
18 b
M
19 b
M
20 b
M
21 b
M
22 b
M
23 b
M
1 b
V
2 b
V
3 b
V
5 b
V
R
DD
V
7 b
M
5 b
M
6 b
M
1 b
M
2 b
M
3 b
M
4 b
M
8 b
M
9 b
M
10 b
M
11 b
M
12 b
M
13 b
M
14 b
M
15 b
M
16 b
M
17 b
M
18 b
M
19 b
M
20 b
M
21 b
M
22 b
M
23 b
M
1 b
V
2 b
V
3 b
V
5 b
V
R
DD
V
Figure 3.16: Schematic of entire bias circuit
M
b1
220/0.7 M
b7
2.2/2.1 M
b13
220/0.7 M
b19
72/0.7
M
b2
220/0.7 M
b8
220/0.7 M
b14
660/0.7 M
b20
22/2.1
M
b3
220/0.7 M
b9
55/2.1 M
b15
660/0.7 M
b21
110/0.7
M
b4
220/0.7 M
b10
690/0.7 M
b16
22/2.1 M
b22
310/0.7
M
b5
22/0.7 M
b11
690/0.7 M
b17
110/0.7 M
b23
310/0.7
M
b6
2.2/14 M
b12
44/2.1 M
b18
72/0.7 R 940
Table 3.2: MOSFETsaspect ratio in the bias circuit
36
the input pairs and generate a random voltage. Typically, a CMOS operational ampli-
ers offset can be up to 20mV. In this design, there have been many efforts made to
reduce the ampliers noise level. These efforts are inherently helpful in minimizing the
operational ampliers random offset.
Because of the high gain of the rst stage, the offset introduced by the second
stage is negligible. So, the input-referred random offset for the operational amplier
shown in Figure 3.11 is approximated by [10]:
V
OS
V
t1,2
+V
t3,4
g
m4
g
m2
+V
t7,8
g
m8
g
m2
+
V
ov1,2
2
_
(
W
L
)
1,2
(
W
L
)
1,2
+
(
W
L
)
3,4
(
W
L
)
3,4
+
(
W
L
)
7,8
(
W
L
)
7,8
_
(3.20)
The rst term in Equation 3.20 is due to the input pairs threshold mismatch. The second
term is due to the active current source load threshold mismatch referred back to the in-
put of amplier. Having g
m4
smaller than g
m2
to reduce noise is also helpful in reducing
this second term. The third term is negligible because of g
m8
is designed far less than
g
m2
fr noise performance. In this design, the large aspect ratio of the input pair achieves
a small overdrive voltage V
ov1,2
and therefore helps to reduce the last term. The standard
deviation of the difference between the input pairs threshold is used as a measure of the
mismatch. This is dened as [17]
Vt
=
A
Vt
WL
(3.21)
and the mismatch in the current gain factor is given by [17]:
=
A
WL
(3.22)
where A
Vt
, A
T
are process-dependent constants and A
Vt
decreases with gate oxide
thickness. Fromthe above equations, it is observed that the large gate area used to reduce
the icker noise can also reduce the threshold and gain factor mismatches, and therefore
37
the offset between the input pair. This can be intuitively understood if we consider the
icker noise as a low frequency signal and the offset also as a low frequency signal.
The efforts to reduce icker noise will also reduce offset. So, the mechanisms to reduce
noise are consistent with reduction of the input-referred offset.
Even though the input-referred random offset of this design is theoretically low,
it still deserves further reduction because of the systematic offset and the remaining ran-
dom offset. Conventional offset reduction techniques such as on-wafer trimming used
in bipolar technology is very expensive and prevents real-time trimming. Some state-of-
art dynamic offset reduction schemes such as auto-zeroing [9] and chopper stabilization
[18] methods can reduce the offset down to several microvolts, but they often alias high-
frequency noise down to the base band. Moreover, there is unavoidable charge injection
and clock feed through. These issues limit dynamic offset reduction schemes to low
frequency applications. Some other methods, such as the ping-pong amplier [19], use
cascode transistors as a load, and adjust the current running through those cascode tran-
sistors. This method will reduce the voltage headroom at the output of the rst stage and
is problematic in low voltage designs.
In this design, a digital trimming method for offset reduction is introduced and
analyzed. Such a method can provide offset trimming at power-up or upon request. A
schematic representation [19] of this method is shown in Figure 3.17. During the offset
calibration phase, the operational ampliers inputs are connected to a common voltage
source. The counter keeps counting and a new controlling voltage is applied to the
auxiliary port of the operational amplier. Then, the operational amplier generates a
new output which is compared with a reference voltage. The counter will stop counting
when comparator experiences a zero crossing. When the output of comparator changes
its state, the calibration phase is concluded and the output of the DAC is set to the
desired controll voltage. In Figure 3.17, the operational amplier is in the open loop
mode. When the open loop DC gain of the amplier is very large, such a conguration
38
Comparator
DAC
CO=1?
V
c
Cross Zero?
Counter
12-bit
V
ref
CO
yes
Stop
Op Amp
V
OS
Comparator Comparator
DAC
CO=1?
V
c
Cross Zero?
Counter
12-bit
V
ref
CO
yes
Stop
Op Amp
V
OS
Op Amp
V
OS
Figure 3.17: Offset tuning scheme with operational amplier in open loop mode
is not very efcient to reduce the offset to make the output xed within the supply rail
unless using the big size auxiliary input pair at the cost of more noise. But in practical
application, the operational ampliers are seldom used in an open-loop conguration.
They are often used in an inverting, non-inverting or transimpedance conguration with
a gain much less than open-loop DC gain. An example of inverting conguration is
shown in Figure 3.18. The amplier can keep inverting, non-inverting or transimpedance
conguration when offset trimming is taking place.
For this offset calibration, an auxiliary port in introduced to this operational
amplier [20] like that shown in Figure 3.10. The size and bias current of the auxiliary
port are chosen to cover a 10mV input referred offset without adding too much extra
noise. The auxiliary input size and offset adjustable range are determined by the setup
shown in Figure 3.19. The operational ampliers primary port is in the unity-gain
conguration. A 10mV offset is applied to the operational ampliers positive input of
the primary port. The desired DC output level is 0V. The voltage at the positive input of
auxiliary port is biased at a DClevel and the negative input is DCswept from 0V to 3.3V.
The simulation result in Figure 3.20 shows that the output experiences a change from
39
12-bit
Op Amp
Comparator
DAC
CO=1?
V
c
Cross Zero?
Counter
V
OS
V
ref
CO yes
Stop
12-bit
Op Amp
Comparator Comparator
DAC
CO=1?
V
c
Cross Zero?
Counter
V
OS
V
ref
CO yes
Stop
Figure 3.18: Offset tuning scheme with operational amplier inverting-congured
V
OS
V
sweep
V
ref
V
Out
V
OS
V
sweep
V
ref
V
Out
Figure 3.19: Setup for auxiliary input design
40
0 0.5 1 1.5 2 2.5 3
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
O
u
t
p
u
t
(
V
)
Input(V)
Output Sweep
Desired Output Level
Figure 3.20: DC sweep of the auxiliary input
20mV down to less than desired DC output level (0V), which means the chosen size of
auxiliary port can cover the selected offset range. The bias current in this auxiliary port
is 10 times less than that of primary port; the aspect ratio is 8 times less than that in
the primary port. Figure 3.21 shows the pre-layout noise performance of the circuits in
Figure 3.1 and Figure 3.10 with the auxiliary port, just a little difference in noise level.
The detailed offset tuning and zero-crossing detection circuit is shown in Figure
3.22. In this gure, there is a DAC, which consists of a segmented wide-swing 12-
bit R-2R conguration [21] shown in Figure 3.23. The 12-bit counters upper 5 bits
are thermo-coded. This makes the accuracy requirement for 1/2 LSB DNL in a 12-bit
converter to be set by 7-bit matching instead of 12-bit. Such segmentation is also helpful
in reducing the glitch area associated with the changing DAC output. Since the output
of DAC drives a capacitive load, the operational amplier as a buffer in this DAC is
omitted.
CNT includes a positive edge triggered 2-bit counter, the counters two output
bits are anded to give C1 output. Therefore receiving three clocks after reset, C1 is set
to
1
to enable DAC and disable itself. During this three-clock period D2, which is two
D ip-ops connected in series, stores the comparators initial status and XOR becomes
41
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
0
1
2
3
4
5
6
7
8
9
x 10
-7
Frequency(Hz)
n
o
i
s
e
l
e
v
e
l
(
v
/
(
H
z
)
)
Wit h Auxi liary Port
Wit hout Auxil iary Port
Figure 3.21: Noise level with and without auxiliary input
CO
Op Amp
Comparator
1 D
1 D
DAC
V
ref+
V
ref-
Clr
Clk
V
c
S
CAL
Out
A1
XOR
D
2
Clkin
D
1
Clk
Clr
Clk
D
1
Clr
Clk
C
1
CNT
Clr
Clk
A
2
En
I1
I2
I3
I4
CO
Op Amp Op Amp
Comparator Comparator
1 D
1 D
1 D1 D
1 D1 D
DAC
V
ref+
V
ref-
Clr
Clk
V
c
DAC
V
ref+
V
ref-
Clr
Clk
V
c
S
CAL
Out
A1 A1
XOR
D
2
Clkin
D
1
Clk
Clkin
D
1
Clk
Clr
Clk
D
1
Clr
Clk
D
1
Clr
Clk
Clr
Clk
C
1
CNT
Clr
Clk
A
2
En
I1
I2
I3
I4
Figure 3.22: Diagram of offset tuning block
42
5
-
b
i
t
C
o
u
n
t
e
r
7
-
b
i
t
C
o
u
n
t
e
r
T
h
e
r
m
o
-
D
e
c
o
d
e
r
3
1
-
b
i
t
R
e
g
i
s
t
e
r
7
-
b
i
t
R
e
g
i
s
t
e
rR
e
s
i
s
t
o
r
S
t
r
i
n
g
31 5
7
38
5
-
b
i
t
C
o
u
n
t
e
r
7
-
b
i
t
C
o
u
n
t
e
r
T
h
e
r
m
o
-
D
e
c
o
d
e
r
3
1
-
b
i
t
R
e
g
i
s
t
e
r
7
-
b
i
t
R
e
g
i
s
t
e
rR
e
s
i
s
t
o
r
S
t
r
i
n
g
31 5
7
38
Figure 3.23: Connection between counter and DAC
to
0
, D2 is still
1
and XOR
gates output becomes
1
Clr
signal (command to start offset tuning) is activated, all the registers are cleared,
and DAC is disabled. The period of
Clr
. At the time 1, the reset signal is released and the counter CNT begins to count.
The comparators initial status is clocked into D2 at time 2 and the output of the XOR
gate is
0
. This
0
to disable the counter and enable the DAC. The DAC starts to increase
its output. When the DAC increases its output, the operational amplier generates a
new output, which is compared with a reference DC voltage through comparator. This
43
process continues until at time 4, the operational ampliers output becomes less than
the reference voltage. At this time, the comparator changes its output to low and D2
is still comparators previous status, which makes the XOR change its status to logical
.
Figure 4.11 shows the simulation of the offset tuning. In this simulation, the
operational amplier works with a single supply voltage with the midpoint voltage at
1.65V. Figure 3.25(a) shows the timing of signal D1 in Figure 3.22. It shows that the
calibration phase is concluded at the time of 0.2805s. In Figure 3.25(b), we can see that
the DAC keeps increasing its output until at the time 0.2805s when the output of the
operational amplier becomes less than the reference voltage. Figure 3.25(c) shows the
waveform of signal
CAL
becomes oat-
ing, and is no longer used. Figure 3.25(d) shows the waveform
Out
in Figure 3.22.
The signal
Out
is oating during the time from 0s to 0.2805s. After the time 0.2805s,
the operational ampliers output is switched back to the
Out
external
Hz at 10MHz.
61
10
0
10
2
10
4
10
6
10
8
10
10
-20
0
20
40
60
80
100
120
140
160
Positive PSRR
Frequency(Hz)
P
S
R
R
(
d
B
)
Cascode
Miller
(a)
10
0
10
2
10
4
10
6
10
8
10
10
0
20
40
60
80
100
120
Positive PSRR
Frequency(Hz)
P
S
R
R
(
d
B
)
Cascode
Miller
(b)
Figure 5.3: PSRR simulation results: a) Positive PSRR, b) Negative PSRR
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
10
8
10
9
10
10
-50
0
50
100
Frequency(Hz)
G
a
i
n
X: 2.455e+008
Y: -0.02884
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
10
8
10
9
10
10
-300
-200
-100
0
Frequency(Hz)
d
e
g
r
e
e
X: 2.455e+008
Y: -155.5
Figure 5.4: Cascode-compensated operational ampliers AC performance
62
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
0
1
2
3
4
5
6
7
8
9
x 10
-7
X: 1e+006
Y: 1.876e-009
X: 1e+007
Y: 1.22e-009
Frequency(Hz)
n
o
i
s
e
l
e
v
e
l
(
v
/
(
H
z
)
)
Figure 5.5: Noise level of the cascode-compensated operational amplier
63
CHAPTER 6
Conclusions
6.1 Summary
Most of the literature on CMOS low noise operational amplier design empha-
sizes icker noise reduction. The standard practice is to increase the size and aspect
ratio of the input pair or replace the CMOS input transistors with bipolar transistors.
Those methods can achieve low icker noise close or comparable to the bipolar transis-
tor counterpart. However, the noise oor within the megahertz bandwidth range is still
high, generally larger than 5nV/