Lecture 16 - Physical Vapor Deposition

Lecture 16

Image of the day: Sputtering and Evaporation systems bombard vs. evaporate

Evaporation pocket

Sputtering cathode

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

Evaporation cell

Physical Vapor Deposition I

Lecture 16

Denition for Physical Vapor Deposition (PVD)

-molecules are removed from a source, transported in vacuum, and deposited on substrate (physi-sorption) - in contrast chemical vapor deposition (CVD)
involves chemical reaction - need vacuum: the pressure usually < 10-2 Torr. (760 Torr = 1 atm)

Need vacuum in order to:

- prevent incorporation of background molecules (oxygen, etc.) - minimize intermolecular collision (mean free path, Lm) so that molecules combine only when they reach the substrate molecule or atom source
5  10
3 Lm ( cm ) = , P P = Pressure in Torr

d < Lm

substrate

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

5  10
3 At 1 atm : P = 760Torr  Lm =  6.6  10
6 cm  66 nm 760 5  10
3 = 5 cm At 1 mTorr :  Lm = 10
3 5  10
3 -5 At 10 Torr :  Lm = = 500 cm = 5 meters! 10
5

Physical Vapor Deposition I

How is low pressure achieved?

Lecture 16
Mechanical pump (~10-3 Torr)

1 atm = 760 Torr.

TurboMolecular Pump (~10-6 Torr) Cryogenic Pump (~10-9 Torr)

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

>50,000 rpm!

liquid He cooled down to ~ 10K!

PVD Techniques
A.Evaporation - evaporation (from solid) or sublimation (solid) - material held in a
boat or crucible - heat: direct
electric current through resistor indirect
high current e-beam

Lecture 16

local heating by e-beam
less contamination

B.Molecular Beam Epitaxy (MBE) - specially designed effusion cell (thermal evap) - can also use plasma and low-pressure gases - deposit material with atomic control (layer-by-layer) C.Plasma-Assisted Deposition - DC or RF sputtering
Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

reactive sputtering magnetron sputtering

Vapor Pressure

Lecture 16
Fig. 12-1 Vapor pressure curves for selected materials.

use evaporation

use sputtering
Al Ni Mo Ta W

typical required vapor pressure

Au Cr

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

Melting Pt.

Thermal Evaporation

Note angular dependence of

Crucible Basket

Lecture 16

Coated Boat

evaporated material from various sources /s

90

180
Coils Conical Basket

bad design
non-uniform lm
substrate

better approach

90 0
Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

180 material material

e-Beam Evaporation

Lecture 16

Indirectly Heated: local heating by electron beam  less contamination

- e-beam current (usually in hundred mA), electron energy ~1-3 keV

Inline Approach

Target material

Bent Beam Approaches: -no back-deposition from crucible to egun  minimize contamination - also more compact
Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

Molecular Beam Epitaxy

- low pressure (<10-5 Torr) so large Lm - specially designed
effusion cells

Lecture 16

Molecular beam epitaxy (MBE) uses evaporation but

- cells have fast shutters for alternating material composition at atomic scale -numerous atom or molecule sources: compound s/c

Fig. 12-6
Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

A basic MBE deposition system. Dinger [13].

MBE Systems

Veeco MBE Systems

Lecture 16
Crucibles - conical evap. prole

thermally isolated effusion cell (allow high temperature)

R&D machine

production: 4x4 wafers

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

Sputter Deposition
molecules at target to be removed

Lecture 16

Physical bombardment of heavy and inert atoms (Ar) causes atoms or

example:
RF sputtering

~10 mTorr

Ar

Ar+

e-

~
C
chamber wall target

~
C
chamber wall target

deposited material substrate substrate

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

1) RF voltage creates a plasma of Ar+ and e2) target:plasma capacitance has less area that wall:plasma capacitance 3) therefore plasma (voltage drop) occurs near the target

4) e- smaller mass than Ar+
move quickly enough in RF (MHz) eld to reach the target 5) these electrons build up -DC voltage on target (~100
s V) 6) negative voltage causes Ar+ acceleration toward target and sputtering of material

10

Sputter Deposition Equipment

Lecture 16
RF matching network power/controls

3 sputter targets

Loadlock

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

11

Sputtering Techniques
(A) Sputter Deposition

Lecture 16

Ar gas: easy to achieve plasma (i.e. breakdown) & high mass (~40 AMU) DC or RF power can generate plasma DC only for conductive target, RF for both conductive & insulating targets Efcient: no major differences for conductive target material

(B) Reactive Sputtering If compound or alloy not available, it can be formed by chemical reaction Examples: Si target + reactive gas N* (N2)
Si3N4 (C) Planar Magnetron Sputtering (electron cyclotron) Permanent magnet increases the plasma density
Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

100 to 500 gauss High deposition rate (> sputtering or evaporation)

12

Sputtering Techniques

Lecture 16

magnetic eld increases path length for electron

- increased ionization of Ar
Ar+ + e- increased ux of Ar+ and sputter rate

ee-

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

material
N S N S S N S N S N N S N S

13

Calendar
MONDAY TUESDAY Oct. 30 Diffusion in Si WEDNESDAY

Lecture 16
THURSDAY Nov. 1 Diffusion: npn BJT Lecture 11 Nov. 8 Ion Implantation: Dose/Damage Lecture 13 Nov. 15 Etching Lecture 14 Nov. 20 Lithography/ Resist Lecture 15 Nov. 27 Physical Vapor Deposition Lecture 16 Nov. 29 Q&A 899 Rhodes Hall Nov. 22 No School Thanksgiving FRIDAY

Lecture 10 Nov. 6 Ion Implantation: Mechanisms Lecture 12 Nov. 13 QUIZ #2

Copyright A.J. Steckl J.C. Heikenfeld All rights reserved 2007

Dec. 3

Dec. 4

Dec. 5

Dec. 6

Dec. 7

FINALS

WEEK

14

Final Exam 8:00AM