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The forward voltage drop of a silicon power diode is 1.2 V at a current 300 A. Assuming VT=25.7mV, find the reverse saturation current. Q2. A p-n junction diode has a reverse saturation current rating of 50 nano Amp at 32C. What should be the value of the forward current for a forward voltage drop of 0.5V? Assume V T= 26 mV at 32C. Q3. A power diode have a reverse saturation current of 15&A at 32C which doubles for every 10 rise in temperature. The dc resistance of the diode is 2.5 m. Find the forward voltage drop and power loss for a forward current of 200 Amps. Assume that the maximum junction temperature is restricted to 102C. Assume VT= 26 mV at 32C. Q4. The reverse recovery time of a power diode is 3 s and the rate of fall of diode current is 30 A/s. Find the storage charge and peak reverse current.
Thapar University, Patiala POWER CONVERTERS (PEE-103) TUTORIAL SHEET-2 Q1. A thyristor has a maximum average gate power dissipation limit of 0.2 watts. It is triggered with pulsed gate current at a pulse frequency of 10 KHZ and duly ratio of 0.4. Assume the gatecathode voltage drop to be 1V find out the allowable peak gate current magnitude. Q2. A thyristor has a maximum average current rating 1200 A for a conduction angle of 180. Find the corresponding rating for conduction angle of 60 . Assume the current waveforms to be half cycle sine wave. Q3. Figure below shows a thyristor controlling the power in a load resistance R L. The supply di voltage is 400 V dc and the specified limit for for the SCR is 50 A/ sec. Determine the dt di value of inductance. dt
Thapar University, Patiala POWER CONVERTERS (PEE-103) TUTORIAL SHEET-3 Q1. In two-transistor analogy of an SCR the following details are obtained: gain of P-N-P transistor=0.4,
gain of N-P-N transistor=0.5, gate current of the device=60 mA. Obtain the anode current. Q2. The maximum and minimum values of gate current for an SCR are 22 mA and 14 mA. If the device is to be gate triggered by a 15V supply, calculate the value of the limiting resistor to be used in the gate circuit. Q3. An SCR has the following details: load current 20A, dc supply voltage 400V, turn off time of the device 190 s. Determine the value of the commutating capacitor. Q4. An SCR is used as a static switch to turn on current in a highly inductive circuit having R=2 and L=2H. The latching current of the SCR is 250 mA. What is the minimum duration of the gate drive pulse required to turn on the SCR switch?
dv rating of an SCR is 100 V/s. Determine the minimum value of capacitance required so that dt dv no erratic turn-on due to occurs when power is switched on by closing the switch S. The supply dt
Q5. The voltage is 400V and R=8 is connected in series with the SCR.
GD
to switch a clamped inductive load of 20 A with a supply voltage of 200V. The gate drive voltage is 15V and gate resistance is 50. Find out maximum value of
Q2. The gate oxide layer of a power MOSFET is 1000 Angstrom thick Assuming a break down field
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strength of 5 10 V/cm and a safely factor of 50%, find out the maximum allowable gate source voltage. Q3. A MOSFET has the following parameters: V (th) = 3V, g = 3, C
GS fs GS
= 800 PF, C
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MOSFET is used to switch an inductive load of 15 A from 150V supply. The switching frequency is 50 kHz. The gate drive circuit has a driving voltage of 15V and output resistance of 50. Find out the switching loss in the MOSFET.
through the IGBT in the event of a short circuit fault across the load. Also find out the power dissipation inside the device. Q2. In the basic gate drive circuit of an IGBT, following data are given: V = 15 V, V = 20 V, for Q
gg cc 1 2 2 B gE fs
= 50, for Q = 50. R = 2.2 K, R = 30, V (th) of IGBT = 4V, g = 40 CgE = 4nF, CgD = 500pF. The IGBT is used to switch a clamped inductive load of 50 Amps from a 400 volts supply. Find out maximum values of
diC dVCE and during Turn on and Turn off of the IGBT. dt dt
Thapar University, Patiala POWER CONVERTERS (PEE-103) TUTORIAL SHEET-9 Q1. A single phase full bridge inverter uses SPWM with seven pulses per half cycle. Plot the fundamental component, THD, DF and LOH against the modulation index. Q2. A single phase full bridge inverter uses modified SPWM with seven pulses per half cycle. Plot the fundamental component, THD, DF and LOH against the modulation index. Q3. Two adjacent vectors are V1=1+j0.577 and V2=j1.55. If the angle between is modulation index is 0.8, find the modulating vector Vcr.
and the 6
Thapar University, Patiala POWER CONVERTERS (PEE-103) TUTORIAL SHEET-10 Q1. The input voltage to a single phase cycloconverter is 120V (rms), 60 Hz. The load resistance is 5 and the load inductance is 40 mH. The frequency of the output voltage is 20 Hz. If the 2 converters are operated as semi-converters such that 0 and the delay angle is p , 3 determine the rms value of output voltage, rms current of each thyristor and the input power factor (PF). Q2. Repeat Q1 if the delay angles of the cycloconverter are generated by comparing a cosine signal at the source frequency with a sinusoidal signal.