Module: ELEC 27

Total questions: 100 Total recorded: 101

Answer 1 x 10 ^ 9 to 1 x 10 ^25 1 x 10 ^ -6 to 1 x 10 ^ -4 1 x 10 ^ -4 to 1 x 10 ^ 9 Reduces its barrier potential Increases its barrier potential InP Hole flow From low resistance to high resistance Substitution Theory Linear and bilateral 1000V 600A All in Parallel

Question 1. Typical Resistivity of insulators 2. Typical Resistivity of conductors 3. Typical Resistivity of semiconductors 4. Forward biasing a PN junction diode 5. Reverse biasing a PN junction diode 6. Which of the following is a natural intrinsic semiconductor? 7. The arrow in a transistor symbol indicates? 8. Resistance of a CB configuration goes 9. What is this theory insert meaning of substitution theory here 10. Superposition theory is only applicable in devices that are? 11. Peak inverse voltage of a diode is 12. Forward break over value of a silcon diode rectifier is 13. If inductors are used as heating coils, they are placed in what arrangement in order to be heated at maximum? 14. A small increase in the internal resistance of an amplifier corresponds to? 15. Transistor early effect uses what principle 16. The main current in a normally biased NPN transistor is 17. The source voltage of a half wave rectifier circuit is Vm the maximum value of the voltage across the diode is? 18. A half wave rectifier works only for? 19. A full wave rectifier works for? 20. What will happen if the operating point was moved closer to the cut-off region 21. What must be done to increase the current passing through a PN junction 22. Why must the emitter be heavily doped? 23. Transformer coupled class A amplifier has an efficiency of? 24. The Q point is located in the center of the dc load line? 25. The output of a common emitter circuit is? 26. A zener diode has? 27. It points to the address of the next

Small Decrease in voltage gain Base narrowing Drift current Vm

Less than half of the cycle Half of the cycle The output will show distortions The recombination of electrons and holes must decrease In order to give out maximum power 50% So that only small dc voltage is needed Out-of-phase A negative resistance Program counter

28. 29. 30. 31. 32. 33. 34.

35. 36. 37. 38. 39. 40. 41.

42.

instruction to be run? Which element has transition temperature of 72.6K What is the conductivity of annealed silver? What is the conductivity of 99.99% gold Which of the following is not usually used to label potentiometer? 1 Kwh is equal to? Which resistor is most effective in high frequencies? What will happen to the output signal if the operating point is in the saturation region? What is the conductivity of 99.95% aluminum? Improper biasing causes Potentiometer always counterclockwise limit Potentiometer always clockwise limit Potentiometer Wiper Transformer coupling of class A amplifiers is done to increase The most noticeable effect of a small increase in temperature in a CE arranged transistor is? PNP transistor with normal bias

Lead 108.8% 72.6% Blue 850kcal Film Type The output might be driven intro thermal runaway

63% Distortion in the output signal Yellow Green Red Efficiency Increase in ICEO

43. In a PNP transistor electron flows into 44. The emitter current in a junction transistor is 45. Transistor terminal voltage is positive if 46. Conductivity of pure annealed copper 47. The space charge region In a junction diode contains charges that are called 48. Common Emitter arrangement of transistor has 49. If PN junction bias voltage is increased from zero to a higher value current flow increase rapidly due to a small value of voltage 50. If PN junction bias voltage is increased from zero to a higher value current flow increase rapidly and will result to a small value of voltage

The emitter-base junction is forward biased and the collector-base junction is reversed biased The collector and base leads Designated at ICO The terminal is more positive than the common terminal 102.1% Fixed donor and acceptor Medium input resistance high output resistance Only after the forward bias exceeds the potential barrier

If Minority carriers are enough to cause an avalanche breakdown

51. The main difference of an NPN transistor and a PNP transistor is that 52. Beta plot 53. High resistance of reversed bias is due to 54. Minority Carriers crossing the junction depends on 55. Which of the following types of resistor is not used for frequencies above 50kHz 56. The emitter of an PNP transistor is more heavily doped that the base 57. Volt ampere plot in Common Base 58. The register that holds the location of the current instruction being executed 59. Capacitance of a PN junction 60. Capacitance of a reversed bias PN junction 61. Transistor terminal is positive if 62. A small increase in collector reverse bias voltage will 63. Class of superconductor with transition temperature at 30K 64. Which of the following does not refer to the number of instructions per second 65. The Quiescent state of a transistor is 66. CE Volt ampere plot 67. Avalanche occurs 68. Temperature at which there is a complete absence of molecular motion 69. It is a high level language that is function oriented that is capable for low level machine control 70. A Principal node is 71. The difference of a mesh current and a branch current is 72. In a CE transistor current gain, the collector voltage is held constant so that 73. ICBO 74. Silicon is doped with ____ in order to have electrons as its majority carriers 75. Transistor action 76. In an unbiased PN junction in equilibrium current is 77. In reverse saturation current

The emitter injects the region with holes in PNP and with electrons in NPN VCB vs IC with constant IB Large change in collector voltage causing little change in collector current The magnitude of the potential barrier Wirewound So that the flow across the region is due to the holes VCB vs IC for constant IE Instruction Register Increases as reverse bias decreases Depends mainly on the reverse saturation current Electron flows out of the terminal Increase collector current First Class Interrupt When no signal is applied at input VCB vs IC with constant IB If reverse bias exceeds certain value Absolute zero C Language

A junction where branch currents can recombine and divide A mesh current is an assumed current and a branch current is an actual current and mesh current does not divide at a branch point Changes in collector current is due to change in base current Increases with temperature Antimony Base region should be narrow Zero, because of equal but opposite direction of carriers crossing the junction Only minority carriers are crossing the region

78. In a PN junction if the current is zero 79. 80. 81. 82. 83. 84. 85. CE input volt ampere plot ICBO flows ICEO is In a forward biased PN junction In PN junction holes diffuse from P region to N region because Compared to CB, CE has Water heater requires 1000kWh to be heated if there is 25% of energy loss the total energy must be equal to A round wire increase from gauge 1 to 40 LED uses Positional barrier at PN junction is due to Diode barrier potential offers opposition only to Signal handling capacity of an amplifier is high ICBE

The number of majority carriers equals the number of minority carriers crossing VCB vs IB with constant VCE In the collector and base leads Collector current with base current equals zero Only majority carriers is injected into the region The concentration of holes are greater in the P region than in the N region Higher current amplification 1333kWh

86. 87. 88. 89. 90. 91.

The diameter and are decreases Reverse bias junction Fixed donor and acceptor The majority carriers If the operating point nears operating point Flows in reverse direction to the collector with the emitter open Thermal carrier generation

92. The increase of formation of holes and free electrons with an increase in temperature 93. Which has more resistance 100m no 12 copper wire or 100m no 12 aluminum wire 94. DC load line 95. Positive swing clips the output 96. If positive voltage signal is applied to a base of a normally biased NPN 97. The emitter of a normally biased transistor 98. If the collector dissipation is zero the Q point increases with excitation in 99. If a KVL is taken not in the complete loop the total voltage 100. Which of the following is not true about 0K 101. Aluminum has a transition temperature of

100m no 12 aluminum wire

Has a negative slope Towards the cutoff region The collector voltage becomes less positive Has low resistance Class B Is the sum of voltages form the start point to the end point The valence and conduction band of an intrinsic semiconductor overlaps 1.2K