SILICON MULTI-EPITAXIAL

NPN TRANSISTOR


Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8537
Issue 1
Page 1 of 3


2N6277
High V
CEO
.
High DC Current Gain, h
FE
.
Low Collector-Emitter Saturation Voltage, V
CE(sat)
.
Fast Switching.
Hermetic TO3 Metal package.
Ideally suited for Power Amplifier and Switching Applications.
Screening Options Available



ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise stated)
V
CBO

Collector Base Voltage 180V
V
CEO

Collector Emitter Voltage 150V
V
EBO

Emitter Base Voltage 6V
I
C

Continuous Collector Current 50A
I
CM

Peak Collector Current 100A
I
B

Base Current 20A
P
D

Total Power Dissipation at
T
C
= 25C
250W
Derate Above 25C 1.43W/C
T
J

Junction Temperature Range -65 to +200C
T
stg

Storage Temperature Range -65 to +200C

THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
R
JC

Thermal Resistance, Junction To Case 0.7 C/W

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277


Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8537
Issue 1
Page 2 of 3

ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ Max. Units
V
(BR)CEO
(1)

Collector-Emitter
Breakdown Voltage
I
C
= 10mA
150 V
I
CEO

Collector Cut-Off Current
V
CE
= 75V I
B
= 0
50
V
CE
= 180V V
BE
= -1.5V
10
A
I
CEX

Collector Cut-Off Current

T
A
= 150C
1.0 mA
I
EBO

Emitter Cut-Off Current
V
EB
= 6V I
C
= 0
100
I
CBO

Collector Cut-Off Current
V
CB
= 180V I
E
= 0
10
A
I
C
= 1.0A V
CE
= 4V
50
I
C
= 20A V
CE
= 4V
30 120

T
A
= -55C
10
h
FE
(1)

Forward-current transfer
ratio
I
C
= 50A V
CE
= 4V
10

I
C
= 20A I
B
= 2A
1.0
V
CE(sat)
(1)

Collector-Emitter Saturation
Voltage
I
C
= 50A I
B
= 10A
3.0
I
C
= 20A I
B
= 2A
1.8
V
BE(sat)
(1)

Base-Emitter Saturation
Voltage
I
C
= 50A I
B
= 10A
3.5
V
BE(on)

Base-Emitter On Voltage
I
C
= 20A V
CE
= 4V
1.8
V

DYNAMIC CHARACTERISTICS
I
C
= 1.0A V
CE
= 10V
| h
fe
|
Small signal forward-current
transfer ratio
f = 10MHz
2 12
V
CB
= 10V I
E
= 0
C
obo

Output Capacitance
f = 1.0MHz
600 pF
I
C
= 20A V
CC
= 80V
t
on

Turn-On Time
I
B1
= 2A

0.5
I
C
= 20A V
CC
= 80V
t
off

Turn-Off Time
I
B1
= - I
B2
= 2A
1.6
s

Notes Notes Notes Notes
(1) Pulse Width 300us, 2%

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277


Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8537
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)


































TO3 (TO-204AE)

Pin 1 - Base Pin 2 - Emitter Case - Collector
39. 95 (1 . 573)
max.
1 7. 1 5 (0. 675)
1 6. 64 (0. 655)
30. 40 (1 . 1 97)
30. 1 5 (1 . 1 87)
2
6
.
6
7

(
1
.
0
5
0
)
m
a
x
.
1
1
.
1
8

(
0
.
4
4
0
)
1
0
.
6
7

(
0
.
4
2
0
)

4. 09 (0. 1 61 )
3. 84 (0. 1 51 )
di a.
2 pl cs.
20. 32 (0. 800)
1 8. 80 (0. 740)
di a.
7
.
8
7

(
0
.
3
1
0
)
6
.
9
9

(
0
.
2
7
5
)
1
2
.
0
7

(
0
.
4
7
5
)
1
1
.
3
0

(
0
.
4
4
5
)
1
.
7
8

(
0
.
0
7
0
)
1
.
5
2

(
0
.
0
6
0
)
1 . 57 (0. 062)
1 . 47 (0. 058)
di a.
2 pl cs.