SGL160N60UF

IGBT
SGL160N60UF
Ultra-Fast IGBT

General Description Features

Fairchild's UF series of Insulated Gate Bipolar Transistors • High speed switching
(IGBTs) provides low conduction and switching losses. • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A
The UF series is designed for applications such as motor • High input impedance
control and general inverters where high speed switching is
a required feature.

Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.

TO-264 E
G C E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description SGL160N60UF Units

VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 160 A
IC
Collector Current @ TC = 100°C 80 A
ICM (1) Pulsed Collector Current 300 A
PD Maximum Power Dissipation @ TC = 25°C 250 W
Maximum Power Dissipation @ TC = 100°C 100 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
TL 300 °C
Purposes, 1/8” from Case for 5 Seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to-Case -- 0.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1

 SGL160N60UF
Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 80mA, VCE = VGE 3.5 4.5 6.5 V
Collector to Emitter IC = 80A, VGE = 15V -- 2.1 2.6 V
VCE(sat)
Saturation Voltage IC = 160A, VGE = 15V -- 2.6 -- V

Dynamic Characteristics
Cies Input Capacitance -- 5000 -- pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance -- 600 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 200 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 40 -- ns
tr Rise Time -- 101 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 80A, -- 90 130 ns
tf Fall Time RG = 3.9Ω, VGE=15V -- 75 150 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25°C -- 2500 -- uJ
Eoff Turn-Off Switching Loss -- 1760 -- uJ
Ets Total Switching Loss -- 4260 5000 uJ
td(on) Turn-On Delay Time -- 45 -- ns
tr Rise Time -- 105 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 80A, -- 140 200 ns
tf Fall Time RG = 3.9Ω, VGE = 15V -- 122 250 ns
Eon Turn-On Switching Loss Inductive Load, TC = 125°C -- 2785 -- uJ
Eoff Turn-Off Switching Loss -- 3100 -- uJ
Ets Total Switching Loss -- 5885 -- uJ
Qg Total Gate Charge -- 345 520 nC
VCE = 300 V, IC = 80A,
Qge Gate-Emitter Charge -- 60 100 nC
VGE = 15V
Qgc Gate-Collector Charge -- 95 150 nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH

©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1

 SGL160N60UF
500 240
Common Emitter 20V 15V Common Emitter
T C = 25℃ V GE = 15V
12V T C = 25℃
200
400 T C = 125℃
Collector Current, I C [A]

Collector Current, I C [A]

160
300 V GE = 10V

120

200
80

100
40

0 0
0 2 4 6 8 0.5 1 10

Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

Characteristics

4 120
Common Emitter V CC = 300V
VGE = 15V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]

100

3 160A
Load Current [A]

80

2 80A 60

IC = 40A 40

20 Duty cycle : 50%

T C = 100℃
Power Dissipation = 130W
0 0
0 30 60 90 120 150 0.1 1 10 100 1000

Case Temperature, TC [℃] Frequency [KHz]

Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
T C = 25℃ TC = 125℃
Collector - Emitter Voltage, V CE [V]

Collector - Emitter Voltage, VCE [V]

16 16

12 12

8 8

160A 160A
4 4
80A 80A

IC = 40A IC = 40A
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V]

Fig 6. Saturation Voltage vs. VGE Fig 7. Saturation Voltage vs. VGE

©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1

 SGL160N60UF
8000 1000
Common Emitter Common Emitter
VGE = 0V, f = 1MHz VCC = 300V, VGE = ± 15V
7000
T C = 25℃ IC = 80A
Cies
TC = 25℃
6000 Ton
TC = 125℃
Capacitance [pF]

Switching Time [ns]

5000
Tr
4000

100
3000

Coes
2000
Cres
1000

0 20
1 10 30 1 10 80

Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ]

Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.

Gate Resistance

2000 10000
Common Emitter Common Emitter
V CC = 300V, VGE = ± 15V V CC = 300V, V GE = ± 15V
1000 IC = 80A IC = 80A
T C = 25℃ T C = 25℃
T C = 125℃ T C = 125℃ Eon
Switching Time [ns]

Toff
Switching Loss [uJ]

Eoff

Eoff

Tf
100
Tf

30 1000
1 10 80 1 10 80

Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ]

Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance

500 1000
Common Emitter
VCC = 300V, V GE = ± 15V
RG = 3.9Ω
TC = 25℃
TC = 125℃
Switching Time [ns]

Switching Time [ns]

Toff
100
Toff

Ton 100
Tf

Common Emitter
Tr V CC = 300V, V GE = ± 15V Tf
RG = 3.9Ω
T C = 25℃
T C = 125℃
10 20
20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160

Collector Current, IC [A] Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current
©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1
 SGL160N60UF
20000 15
Common Emitter Common Emitter
V CC = 300V, V GE = ± 15V RL = 37.5 Ω
10000
RG = 3.9Ω T C = 25℃

Gate - Emitter Voltage, VGE [ V ]

T C = 25℃ 12
T C = 125℃
Switching Loss [uJ]

300 V
1000
6
VCC = 100 V 200 V

Eoff 3

Eon

100 0
20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350

Collector Current, IC [A] Gate Charge, Qg [ nC ]

Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics

1000 500

IC MAX. (Pulsed)

100 IC MAX. (Continuous)

100
Collector Current, I C [A]

50us
Collector Current, IC [A]

100us
1㎳
10
DC Operation
10
Single Nonrepetitive
1 Pulse T C = 25℃
Curves must be derated
linearly with increase Safe Operating Area
o
in temperature V GE=20V, T C=100 C
0.1 1
0.3 1 10 100 1000
1 10 100 1000

Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristic Fig 16. Turn-Off SOA Characteristics

0.5
Thermal Response [Zthjc]

0.2
0.1
0.1

0.05

0.02
0.01 0.01 Pdm

t1
single pulse
t2

Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1

 SGL160N60UF
Package Dimension

TO-264
20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2.0

20.00 ±0.20
0)

0 ±0

(R1
.20

.00
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® MICROWIRE™ SLIENT SWITCHER® UHC™
Bottomless™ FASTr™ OPTOLOGIC™ SMART START™ UltraFET®
CoolFET™ FRFET™ OPTOPLANAR™ SPM™ VCX™
CROSSVOLT™ GlobalOptoisolator™ PACMAN™ STAR*POWER™
DenseTrench™ GTO™ POP™ Stealth™
DOME™ HiSeC™ Power247™ SuperSOT™-3
EcoSPARK™ I2C™ PowerTrench® SuperSOT™-6
E2CMOS™ ISOPLANAR™ QFET™ SuperSOT™-8
EnSigna™ LittleFET™ QS™ SyncFET™
FACT™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT Quiet Series™ MicroPak™ Quiet Series™ TruTranslation™
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. H5

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.