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Features
3.3A, 200V rDS(ON) = 1.500 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards
Ordering Information
PART NUMBER IRF610 PACKAGE TO-220AB BRAND IRF610
Symbol
D
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRF610
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF610 200 200 3.3 2.1 8 20 43 0.34 46 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Device Inductances
D LD
TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VDS = VGS, ID = 250A VDS = Max Rating, VGS = 0V VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) VGS = 20V VGS = 10V, ID = 1.6A (Figures 8, 9) VDS 50V, ID = 1.6A (Figure 12) VDD = 100V, ID 3.3A, RG = 24, RL = 30 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1MHz (Figure 11)
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
4.5
nH
LS
Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad
G LS S
7.5
nH
2.9 80
oC/W oC/W
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IRF610
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier
G D
MIN -
TYP -
MAX 3.3 8
UNITS A A
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
TJ = 25oC, ISD = 3.3A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s
75 0.33
160 0.9
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 6.4mH, RG = 25, peak IAS = 3.3A.
5.0
4.0
3.0
2.0
1.0
50
100
150
0 25
50
75
100
125
150
0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE PDM
0.01 10-5
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10
t1 t2
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TJ = 150oC SINGLE PULSE TC = 25oC 10s 100s 1ms ID, DRAIN CURRENT (A)
VGS = 10V VGS = 8V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 7V
1 10ms DC
20
40
60
100
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A)
10
4 VGS = 8V VGS = 7V 2 VGS = 6V 1 VGS = 4V 0 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V
0.1
TJ = 150oC TJ = 25oC
10-2 0
10
3.0
12
2.4
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 3.2A
1.8
1.2
0.6
-60
-40
-20
20
40
60
80 100
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400 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD
320
1.05
240
0.95
CISS
0.85
0.75 -60
-40
-20
20
40
60
80
102
1.2
100
TJ = 25oC
0.9
TJ = 150oC
TJ = 150oC 10
TJ = 25oC
0.6
0.3
1 0 1 2 3 ID, DRAIN CURRENT (A) 4 5 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0
16
12
VDS = 40V
VDS = 160V
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0V
IAS 0.01
0 tAV
90%
RG DUT
VDD 0
10% 90%
10%
50%
CURRENT REGULATOR
12V BATTERY
0.2F
50k
0.3F
DUT 0
4-195
IRF610
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