B E

D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

The Bipolar Junction Transistor- Small Signal Characteristics

Debapratim Ghosh
deba21pratim@gmail. com

Electronic Systems Group Department of Electrical Engineering Indian Institute of Technology Bombay 8 September !"

B E
D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

The BJT as a de#ice

$ three terminal de#ice- Emitter %E&' Base %B& and Collector %C&( )oo*ing +into, each terminal gi#es us interesting information(

$n $mplifier using the BJT

o-p

$CommonEmitter%CE&amplifierisat.o-portnet.or*( CE $mplifier
B E

D e b a p r a t i m

G h o s h

D e p t .

o f

E E ,

I I T

B o m b a y

3 / 1 3

i-p

B E
D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

B E
D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

The $C input is gi#en on the B-E side' and output is measured on the C-E side( /or.ard-acti#e region- B-E for.ard biased' and C-B re#erse-biased 0sing the Ebers-1oll model in this region

B E
D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

The B-E 2unction under for.ard bias is characteri3ed by

4 B E

I 5I
E

E S

%e

4 T

"&

%"& E6uation%"& sho.s that the B-E 2unction resembles a diode( The C-B 2unction under re#erse bias is characteri3ed by B E
D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

4 B E

I 5I 5I
C E

E S

%e4T -" & 5 I

% & E6uation% & sho.s that I is a current-controlled current source( C

C

B E
D e b a p r a t i m G h o s h D e p t . o f E E , I I T B o m b a y 3 / 1 3

The Complete BJT Small Signal 1odel

78 9hat is a +small signal,: $8 ;nce a circuit is biased .ith DC #oltages' an added $C signal small in amplitude not to disturb the bias conditions is called a small signal(

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

Introduction The E#periment

rob!em "tatement $ode!in% the B&T

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

<esistance

rb!c

can be ignored( 9hy:

cb!e

$t lo. fre6uencies' the capacitances

and

cb!c

can be ignored( 9hy:

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

Introduction The E#periment

rob!em "tatement $ode!in% the B&T

;nce C

b!c'

c and
b! e

cb!c

are ignored' the model becomes much simpler(

b b

B=

The notation i indicates the small signal %$C& base current( $

b

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

similar lo.ercase notation follo.s for small signal #oltages as .ell( >ere' is the $C current gain %different from DC ). Define the input resistance r 5
i o
r

b b

b! e(

The output resistance r is a conse6uence of the Early effect(

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

Introduction The E#periment

rob!em "tatement $ode!in% the B&T

@rocedure to ;btain the $C 1odel of a Circuit

<)

1. '. 3.
4$

Do a DC analysis( Compute all DC currents and #oltages' e(g( I B' IC' 4C E etc( Calculate r b e 5 4 I ( It is difficult to calculate rbb! analytically( If the Early 4oltage 4$ is *no.n' find r o 5
!

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

IC (

/or $C analysis' deacti#ate all DC sources( Ao. apply the model to the rest of the circuit( EBercise8 /or the circuit belo.' construct the small signal $C circuit(

(.

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

Input )esistance *+ +urrent Gain ,utput )esistance

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

Introduction The E#periment

4
Debapratim Ghosh

i n

Dept. of EE, IIT Bombay

7/13

4
Debapratim Ghosh

EBperiment- @art "

i n

Dept. of EE, IIT Bombay

7/13

CDE 4
Debapratim Ghosh
i n

Dept. of EE, IIT Bombay

7/13

In this part' .e determine the input resistance of an npn transistor BCFCD( 0se 4
Debapratim Ghosh
i n

Dept. of EE, IIT Bombay

7/13

the circuit sho.n( 4

Debapratim Ghosh
i n

Dept. of EE, IIT Bombay

7/13

Input )esistance *+ +urrent Gain ,utput )esistance Introduction The E#periment

Steps for @art " 1. '. 3.

Set the DC operating point %!(G H 4 B E H !(84 and C H 4 C E H G4&( Ao. go for $C analysis( 4ary 4 i n to get # b e in the range ! - "!!m4( Clearly' %I& ri 5 # be
4

in-# be <s

.here < s 5 CD*E( (. 4ary IB %using the "1E pot& to get different #alues of r i( Tabulate r i #-s I B(

-.

9e *no. that' r i 5 4i n

bb!

b! e

bb!

4T

Debapratim Ghosh

Dept. of EE, IIT Bombay

1'/13

IB (

..

@lot a graph of r i #-s I B to find

-"

rbb!(

Subtract from r i to obtain

b! e(

ri

bb!

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

Input )esistance *+ +urrent Gain ,utput )esistance Introduction The E#periment

EBperiment- @art
In this part' .e determine the small signal $C current gain () of the BCFCD( "( 0se the same circuit as in @art "( ( /rom the small signal model' .e can sho. that 4 # i 5
i n b b e

% <
s

I( $gain' since < H < '

C )

4 i 5<
c

% F &
1'/13

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

C( $nd of course' 5 EBercise8 The transconductance g of a BJT is defined as @i g 5 v

ic i b ( m c m

% G &

b e

I B

Deri#e an eBpression for g in terms of the de#ice small signal parameters( $lso' find g .hile you do the eBperiment(
m m

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

Input )esistance *+ +urrent Gain ,utput )esistance Introduction The E#periment

EBperiment- @art I
In this part' .e determine the output resistance r of the BJT(
o

Sho.n belo. is the small signal model of the circuit on the output side( 4
o

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

i <
)

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

/inding r becomes easier .hen the effect of < is minimi3ed( This .ill happen .hen < J "(
o C C

But .e can t 2ust open < - it .ill disturb the DC bias pointJ
C

Solution- 0se a F> inductor in series .ith < ( $t DC' it gi#es 3ero reactance and at "! *>3' a reactance of o#er I!!*EJ This nearly creates an open circuit in the < branch(
C C

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

Input )esistance *+ +urrent Gain ,utput )esistance

The effecti#e circuit no. becomes simpler(

Debapratim Ghosh Bombay

4i n

Dept. of EE, IIT 1'/13

ic <)

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

1. '. 3. (.

/irst' open circuit < )' i(e <) J "( Aote the output #oltage 4 o as
oc

oc(

Ao.' connect < ) and #ary it till 4o 5 4 ' . This .ill happen .hen < ) 5 r o( The #alue of < ) no. gi#es the #alue of r oJ

The final circuit you need to use is only a small modified #ersion from the one used in @arts " and (

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay

1'/13

Input )esistance *+ +urrent Gain ,utput )esistance

Circuit to be used in this part of the eBperiment <)

Debapratim Ghosh

4i n

Dept. of EE, IIT Bombay 1'/13

Input )esistance *+ +urrent Gain ,utput )esistance Introduction The E#periment

/ood for Throught

Study the r #-s I-1 plot obtained after doing @art " of the eBperiment( 9hat does the slope of the graph gi#e us:
i B

/ /

/or the circuit in @art "' construct the small signal e6ui#alent circuit( @ro#e that the #oltage gain $ 5 4 / 4 < "' for the gi#en component #alues(
# o u t i n

The point B= corresponds to a hypothetical point nside the base' and rbb! is the resistance bet.een the base terminal lead and the bul* base material( 9hy then' don=t .e ha#e a similar point for the emitter and collector as .ell' i(e( E=

0ii1 g
Debapratim Ghosh

Dept. of EE, IIT Bombay

13/13

and C=:

/ /

The eBpected #alue of r is usually C! - F!*E( Compare this .ith the obser#ed r ( Gi#e reasons for the difference obser#ed in the #alues(
o o

In an ideal BJT' .hat #alues .ould .e eBpect for the follo.ing 6uantities:

0i1 0ii1 r
r

'

and hence' r

0ii1 g
Debapratim Ghosh

Dept. of EE, IIT Bombay

13/13