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Journal of Crystal Growth 351 (2012) 101–106

Contents lists available at SciVerse ScienceDirect

Journal of Crystal Growth

journal homepage: www.elsevier.com/locate/jcrysgro

Mushroom structure of GaN template for epitaxial growth of GaN

Sung Bo Lee n, Tae-Wan Kwon, Jungwon Park, Won Jin Choi, Hae Sung Park
Iljin Materials, R&D Center, LED Division, Ansan 425-090, South Korea

a r t i c l e i n f o abstract

Article history: In the present study, we show the formation of mushroom morphology produced by a ramp anneal of a
Received 14 February 2012 low-temperature GaN buffer layer. Structural analysis by transmission electron microscopy indicates
Received in revised form that the cap of the mushroom has the stable wurtzitic GaN structure, whereas the stem possesses the
24 April 2012
metastable zinc-blende structure. With the air gap introduced between the substrate and the cap of the
Accepted 26 April 2012
mushroom structure, threading dislocations propagate along its stem. The formation of the mushroom
Communicated by C. Caneau
Available online 5 May 2012 morphology is suggested to result from the nucleation of wurtzitic GaN on the surface of the low-
temperature buffer layer during the ramp anneal, followed by mass transport of GaN from the buffer
Keywords: layer, which remains zinc-blende during the anneal, to the surface, because wurtzitic GaN has the lower
A1. Mass transfer
structure energy than zinc-blende GaN. This study extends limits of the conventional use of the buffer
A2. Single crystal growth
layer, laying the foundation for the development of low-cost recipes for achieving GaN templates with a
A3. Metalorganic vapor phase epitaxy
B1. Gallium compounds low density of threading dislocations.
B2. Semiconducting III–V materials & 2012 Elsevier B.V. All rights reserved.
B3. Light emitting diodes

1. Introduction by dielectric materials, such as SiO2 or SiN, separated by window

Since sapphire and GaN are dissimilar in lattice parameter and
thermal expansion coefficient, direct deposition of GaN on the
sapphire substrate at a high temperature results in three-dimen-
sional growth, revealing a noncontinuous film, and the resulting
film contains a high density of threading dislocations (TDs), which
are detrimental to light-emitting devices. Thus, it is well accepted
that, for two-dimensional growth of high-temperature (HT) GaN
epitaxial layers, a buffer layer should be grown at lower tem-
peratures beforehand to promote uniform coverage on the sap-
phire. The growth of a low-temperature (LT) buffer layer between
the two materials has been employed to accommodate the
mismatches [1,2]. And several approaches have been implemen-
ted to reduce the TD density by modifying the buffer layer. The
modifications were done by Si/N treatments [3,4], by lowering
NH3 flow rate [5] or, by lowering V/III ratio [6]. During an anneal,
the LT layer undergoes transformation into larger islands with
better crystallinity. Threading dislocations (TDs) are accepted to
form by coalescence of those islands [7] and thus, the reduction in
density of islands by those annealings leads to a decrease in TD
density. Other promising attempts include the epitaxial lateral
overgrowth (ELOG) technology and its variants, such as maskless
ELOG [8,9] pendeoepitaxy [10] and air-bridged ELOG [11]. In the
ELOG processes, part of the defective initial GaN layer is masked
areas, so that TDs in the layer cannot propagate upwards to the
overlayer during subsequent regrowth. However, the processes
are achieved at the expense of additional steps, which lead to an
increase in production costs.
Here, we report the formation of mushroom morphology by a
simple anneal of a LT GaN buffer layer, a remarkable effect that
seems to provide a more effective way to produce a low-dislocation-
density GaN than the previously suggested methods [3–6,8–11].
When our GaN buffer layer grown at a low temperature (550 1C) by
metalorganic chemical vapor deposition (MOCVD) was ramped to a
high temperature (1050 1C) and then cooled to room temperature
without being held at the high temperature, it was found that it had
evolved into a mushroom-like structure. The ramp anneal was
performed in only NH3 and H2 ambient without any introduction
of Ga source. From the structural analysis by transmission electron
microscopy (TEM), the structure of the mushroom’s cap was
identified as the stable wurtzitic (hereafter, wz) hexagonal GaN
(wz GaN), and the stem region as the metastable zinc-blende (zb)
cubic GaN (zb GaN). A better-developed (0001) surface was achieved
by Mg doping. A mechanism for the formation of the mushroom
structure is suggested.
2. Experimental methods

In the present study GaN films were grown on c-plane sapphire

n
Corresponding author. Tel.: þ82 31 599 6972; fax: þ 82 31 599 6910. substrates (4 in diameter) by low-pressure metalorganic chemical
E-mail addresses: bolee@iljin.co.kr, bolee@snu.ac.kr (S.B. Lee). vapor deposition (MOCVD) in a vertical reactor (AIXTRON) using

0022-0248/$ - see front matter & 2012 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.jcrysgro.2012.04.036
 Author's personal copy

102 S.B. Lee et al. / Journal of Crystal Growth 351 (2012) 101–106

tri-methyl gallium (TMGa) and ammonia (NH3) as source materials
for Ga and N, respectively. Hydrogen (H2) was used as the carrier
gas. The deposition and heat-treatment process in the present study
was composed of three steps: (i) LT GaN buffer deposition, (ii) ramp
anneal of the buffer layer, and (iii) HT deposition. The flow rates of
TMGa and NH3 were 201 mmol/min and 6200 sccm, respectively,
during GaN deposition (i and iii), the V/III ratio being 1376. The flow
rate of H2 was 56 slm during all the steps. The ramp anneal (ii) was
performed in only NH3 and H2, whose flow rates were the same as
in the buffer growth at the low temperature. The reactor pressure in
steps (i), (ii), and (iii) was 150, 300, and 300 Torr, respectively.
Before deposition, all substrates were cleaned with solvents and
subjected to a heat-treatment in flowing H2 at 1100 1C.
First, an undoped (u-) GaN layer was deposited at a growth
pressure of 150 Torr and temperature of 550 1C to a thickness of
100 nm under a gas mixture of TMGa, NH3, and H2. The
deposition time at the low temperature was 827 s. The LT GaN
layer was ramped to a high temperature of 1050 1C at a rate of
60 1C/min and then cooled to room temperature without being
held at the high temperature.
Next, we examined the effects of the incorporation of Mg on
the mushroom morphology. Biscyclopentadienyl-magnesium
(Cp2Mg) was used as the source material for Mg. First, an Mg-
doped GaN layer was grown on the sapphire substrate at 550 1C to
a thickness of  100 nm under the V/III ratio of 1376, as for the
u-GaN layers. During the growth, the flow rate of Cp2Mg during
the deposition was 1.6 mmol/min. As for the aforementioned
u-GaN buffer layer, the ramp anneal was performed in only NH3
and H2 ambient. Then, to know whether the mushroom structure
can be useful as a template for a u-GaN overgrowth layer, u-GaN
was further deposited on the mushroom structure at 1050 1C for
4600 s under the same V/III ratio as in the LT growth (1376). The
resultant GaN film thickness was 3 mm.
Surface morphologies were examined using a scanning electron
microscope (SEM) (FEI Nova 200 Nanolab dual-beam, FEI, The
Netherlands) and a scanning probe microscope (Dimension 3100,
Veeco Instruments Inc., USA). Crystalline quality was examined by
cathodoluminescence (CL) in panchromatic mode using MonoCL4
(Gatan Inc., Pleasanton, USA) attached to a field-emission SEM
(SU70, Hitachi, Japan) and X-ray diffractometry (XRD) (X’Pert Pro,
PANalytical B.V., Almelo, The Netherlands). The panchromatic CL
images were taken at room temperature at an acceleration voltage
of 5 keV, providing fast two-dimensional views of the luminescence
intensity distribution reflecting the local variation of defect density.
Dislocations appear as dark spots in a CL image, where the
luminescence intensity is decreased due to non-radiative recombi-
nation, serving as contrast [12]. The full-width at half-maximum
(FWHM) values of the (0002) and (10–12) planes were measured by
XRD. Defect structures were characterized by transmission electron
microscopy (TEM). Specimens for TEM were prepared in a focused
Ga-ion beam (FIB) workstation (FEI Nova 200 Nanolab dual-beam
FIB, FEI, The Netherlands). The prepared specimens were examined
in a field-emission TEM (Tecnai G2 F30 S-Twin, FEI, The Nether-
lands) operated at 300 keV (0.2 nm point-to-point resolution).
3. Results
Fig. 1(a) shows a high-resolution TEM (HRTEM) image of an
undoped GaN (u-GaN) buffer layer ( 100 nm thick) grown at
550 1C. It was composed of columnar grains (10–25 nm in diameter)
with a high density of stacking faults and twins, and fast Fourier
transform (FFT) analysis shows that its crystal structure was zinc-
blende (inset in Fig. 1(a) taken along the [110] zone axis). After being
heated to 1050 1C in only NH3 and H2 ambient and then cooled down
to room temperature without being held at the high temperature,
surprisingly, it was observed that the continuous film had developed
into mushroom shapes, as demonstrated by scanning electron
microscopy (SEM) in tilted view and cross-section bright-field TEM
(Fig. 1(b) and (c), respectively). Fig. 1(c) shows that the cap of the
mushroom structure was faceted with the top (0001) facet and the
side facets of {10 11}, which are identified by the measured angle of
 601, which is close to the angle between the (0001) and (1011)
planes of GaN (621). (Some facets in Fig. 1(c) exhibit angles much
smaller than 621, resulting from cross-sectioning some (10 11)
facets of the irregular-shaped cap, which were not parallel to the

Fig. 1. (a) High-resolution TEM image of the buffer layer (taken along the [1-100] zone axis of the sapphire substrate (or, equivalently, the [110] zone axis of zinc-blende
(zb) GaN or the [2-1-10] axis of wurtzitic (wz) GaN, following the epitaxial relationship between the three phases)). Inset of (a): FFT pattern of a white-boxed region in (a),
indicating that the layer was severely-faulted zinc-blende. The streaking along the /111S direction resulted from a high density of stacking faults, which were parallel to
the (0001) plane of the sapphire substrate. (b) Tilted-view SEM image of the buffer layer after undergoing the ramp anneal. (c) Cross-section bright-field image taken along
the [1-100] zone axis of the sapphire substrate. (d) Cross-section g–3 g weak-beam dark-field image of the ramp-annealed layer (taken near the [2-1-10] zone axis of wz
GaN with g ¼0002). TDs have screw (s), edge (e) and mixed (m) characters, and in (d) a mixed (m) dislocation is seen. (e) High-magnification image of the white-boxed
region in (d) (along the [1-100] zone axis of the sapphire substrate). (f)–(h) are FFT patterns of white-boxed regions of the mushroom shown in (e)).
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S.B. Lee et al. / Journal of Crystal Growth 351 (2012) 101–106 103

viewing direction (the [2 1 10] zone axis of GaN).) The characters
and morphology of TDs can be clearly discerned in weak-beam dark
field, as exemplified in Fig. 1(d). TDs propagated upwards typically
along the stem to the cap, but due to the air gap between the
substrate and the laterally grown part in the cap (designated as wing),
the wing region (especially its upper part) was relatively free of TDs
(Fig. 1(d)). Fig. 1(e) shows a high-resolution image of the white-boxed
region in Fig. 1(d). Through phase analysis by FFT shown in Fig. 1(f)–
(h), the cap of the mushroom, including its lower part, was identified
as wurtzitic, but its stem remained zinc-blende. The lower part of the
cap had wurtzite structure with a high density of stacking faults. The
phase difference between the cap and the stem hints at the driving
force for the formation of mushrooms, which will be discussed later.
The Mg-doped buffer layer, after undergoing the ramp anneal
step, also showed a mushroom structure, as for the u-GaN buffer
layer, but featured better-developed (0001) surface facets than
the u-GaN mushroom, revealing a higher ratio of the length in the
direction normal to the [0001] direction to that parallel to the [0001]
direction (Fig. 2(a)–(c)). TD propagation along the stem is also seen in
Fig. 2(c). As for the ramp-annealed u-GaN mushroom structure, FFT
analysis of the Mg-doped mushroom structure revealed that the cap
of the mushroom (also including its lower part) was wurtzitic with its
stem being zinc-blende (Fig. 2). Since the Mg-doped mushroom
structure showed a better surface coverage than the u-GaN mush-
room structure, the former was chosen as a template for a u-GaN
overgrowth layer. As shown in Fig. 3(a), the 3 mm thick film on the
Mg-doped GaN mushroom structure preserved the air gap. The
crystal structure of the whole film was wurtzitic, indicating that the
stem of the mushroom structure was transformed from zinc-blende
into wurtzitic during the HT GaN growth. Mg-induced pyramidal
defects [13] appeared near the sapphire/GaN interface with no
inversion domain boundary observed (Fig. 3(b)). Full-width at half-
maximum values of the XRD rocking curves for the (0002) and (10–
12) reflections were 387 and 496 arcsec, respectively. The atomic
force microscopy (AFM) image (Fig. 3(c)) over an area of 5  5 mm2
featured a root-mean-square roughness of 0.33 nm, and the high-
resolution panchromatic cathodoluminescence (CL) image shows a
density of dark spots of 2.2  108 cm  2 (Fig. 3(d)). A plan-view TEM
image taken near the sapphire/GaN interface (Fig. 3(e)) shows
coalescence boundaries, but no sign of such boundaries was observed
near the film surface, as shown in Fig. 3(f), which indicates a TD
density of  3.5  108 cm  2.
We illuminated the effect of HT anneal on the buffer GaN layer.
The anneal was not a growth, and therefore, did not include TMGa.
The u-GaN buffer layer was ramped to 1050 1C, as for the mushroom
structure (Figs. 1 and 2), and then further annealed at the high
temperature for 10 min and 30 min in only NH3 and H2 ambient. For
the specimen annealed for 10 min (Fig. 4(a)), not only the cap but
also the stem regions were identified as wurtzitic, as demonstrated
in Fig. 4(b). For the specimen annealed for 30 min, as shown in Fig. 2. After the ramp anneal, the Mg-doped buffer layer featured a mushroom
structure as demonstrated by SEM in tilted-view (a) and cross-section bright-field
Fig. 4(c), the buffer was severely etched. As in the case of the TEM (taken along the [1-100] zone axis of the sapphire substrate) (b). (c) Cross-
specimen annealed for 10 min, the remaining GaN had been section TEM (g–3 g weak-beam dark-field condition of a mushroom structure
transformed into faulted wurtzite, as shown in Fig. 4(d). (taken near the [2-1-10] zone axis of wz GaN with g ¼0002)). (d) High-magnifica-
tion image of the white-boxed region in Fig. 2(c) (along the [1-100] zone axis of
the sapphire substrate). (e)–(g) are FFT patterns of the white-boxed regions in (d).

4. Discussion
The streaking along the /111S direction in the FFT pattern in
Fig. 1(a) resulted from a high density of stacking faults, which
create hexagonal regions (wurtzite) locally [14]. That is, the buffer
layer had zinc-blende structure with wurzitic layers embedded.
The observation is consistent with previous results showing that
the buffer layer is largely a mix of zinc-blende and wurtzite
structures instead of equilibrium wurtzite structure [14–16].
As shown in Figs. 1(b) and 2(a), some crystallites were observed to
remain unchanged without being transformed into the mushroom
morphology. Therefore the overgrowth at the high temperature can
occur on the remaining crystallites and also directly on the sapphire
substrate. Such an overgrowth will deteriorate material quality,
because TDs would propagate upwards freely in the absence of the
air gap. The air gap is likely to be well trapped for the overgrowth on
top of mushrooms with better coverage (i.e., with wider (0001)
surface). Actually, while the HT overgrowth on the u-GaN mushroom
layer did not show the air gap clearly (not shown here), that on the
Mg-doped mushroom with the better coverage exhibited the air gap
(Fig. 3(a)). Of course, the overgrowth could occur on the remaining
 Author's personal copy
104 S.B. Lee et al. / Journal of Crystal Growth 351 (2012) 101–106
Fig. 3. (a) Cross-section two-beam bright-field TEM image of the 3 mm u-GaN film
grown at 1050 1C on the mushroom structure (taken near the [2-1-10] zone axis
with g ¼0002). A high-magnification image in g–3 g weak-beam dark-field (taken
near the [2-1-10] zone axis of wz GaN with g ¼ 0002) of the white-boxed region in
(a) corresponds to (b). (c) AFM image of the 3 mm GaN grown on the mushroom
structure. (d) Representative panchromatic CL image. Two-beam bright-field TEM
images taken near the sapphire/GaN interface (e) and near the film surface
(f) (near the [0001] zone axis with g¼ 11  20 (indicated by white arrows)).
crystallites and on the sapphire also for the Mg-doped mushroom
structure, because the coverage was not perfect either. The width of
the stem in the overgrowth on the Mg-doped mushroom (sometimes
larger than 1 mm, Fig. 3(a)) was observed to be larger than in the Mg-
doped mushroom structure itself (normally, 400 nm at most,
Fig. 2(c)). And we attribute the observation to the overgrowth on
the areas not covered by the mushrooms. Thus, one of the objectives
Fig. 4. (a) High-magnification bright-field TEM image of the buffer layer after
annealed at the high temperature for 10 min following the ramp anneal (taken
along the [1-100] zone axis of the sapphire substrate). (b) FFT patterns of white-
boxed regions of the mushroom shown in (a) (indicated by numbers, 1  4).
(c) Cross-section TEM image of the buffer layer annealed for 30 min. (d) FFT
pattern of white-boxed regions in (c).
of our future study will be to obtain a mushroom structure with
better coverage than shown in the present study.
The high density of stacking faults shown in the lower part
of the cap of the mushroom (Figs. 1(e) and 2(d)) appears to
propagate from basal-plane stacking faults in the stem. In the
initial stage of the mushroom formation, the faults would gen-
erate steps on the surface of the islands for nucleation and growth
of wz GaN. Shockley partial dislocations along the (111) planes of
zb GaN (stem) possibly run along the (0001) planes of wz GaN
(the bottom of the cap), resulting in stacking faults at the bottom
of the cap, as revealed in Figs. 1(e) and 2(d). That is, the stepped
surface of the zinc-blende island can act as a template for
wurtzitic growth, as proposed by Narayan et al. [14].
The ‘mottled’ contrast in the stem area shown in Fig. 1(d) was
due to defects (dislocations, stacking faults, and boundaries between
columns). Such a mottled contrast was also observed in the lower
part of the cap. As noted in the previous paragraph, stacking faults
propagated from the stem to the lower part of the cap (Fig. 1(e)). We
suppose that the contrast originated in stacking-fault-related
defects, such as stacking mismatch boundaries [17] and dislocations
[18]. Through TEM investigations Narayanan et al. [18] suggested
that TDs are generated by climb and glide of basal plane disloca-
tions, which form by the dissociation of Shockley partial dislocations
bounding stacking faults. However, TDs were rarely observed to
propagate from the lower part of the wing, but originated at the
stem, as exemplified in Fig. 1(d). This observation indicates that the
density of TDs originating at the GaN/sapphire interface is much
higher than that of TDs which might originate at stacking faults in
the lower part of the wing.
For both Mg-doped and u-GaN mushroom structures, the caps
were faceted, exhibiting (0001) and {10–11} surface facets
(Figs. 1(c) and 2(b)), as shown in the literature [19,20]. However,
 Author's personal copy
S.B. Lee et al. / Journal of Crystal Growth 351 (2012) 101–106
the presence of Mg (Fig. 2(a) and (b)) was observed to widen the
(0001) facet relative to the {10–11} facets, as compared with the
u-GaN mushrooms (Fig. 1(b) and (c)). Beaumont et al. [19]
observed that the growth rates in the [0001] and /10–11S
directions were strongly affected by introducing Mg. The Mg
incorporation was shown to favor the adsorption of Ga on the
{10–11} facets rather than on the (0001) facet, increasing the
growth rate in the /10–11S directions. As a result, the Mg
incorporation promotes faster coalescence in the ELOG process
[21]. Thus we expect that the Mg incorporation would produce a
mushroom structure with better surface coverage than without
any introduction of Mg, and such a tendency is confirmed by a
comparison between Fig. 1(b)–(d) (u-GaN mushrooms) and
Fig. 2(a)–(c) (Mg-doped mushrooms).
As shown in Fig. 3(a), for the 3 mm thick GaN film on the Mg-
doped mushroom structure, several vertical TDs were observed to
propagate from positions away from the stem region. This
phenomenon is attributed to irregular shapes and random posi-
tions of stems. Stems developed spontaneously during the ramp
anneal, featuring irregular shapes and being randomly located on
the substrate. Furthermore, TDs generally propagate upwards in
curve, which is attributed to TD motion due to their interaction.
Thus, although part of a stem or other stems near the TEM-
imaged stem are not seen in a TEM image, TDs originating in them
can appear in the image.
Based on the aforementioned observations (Figs. 1 and 2), a
plausible scenario is suggested for the mechanism of the mush-
room development, as sketched in Fig. 5. At elevated tempera-
tures during the ramp anneal, the continuous buffer layer is
expected to break up into many three-dimensional islands due to
the high interfacial energy between GaN and sapphire (Fig. 5(a)),
as is normally observed after the HT buffer anneal process during
MOCVD of GaN [22–24]. Simultaneously, the surface of the
islands also undergoes decomposition of GaN during the ramp
anneal, producing metallic Ga atoms located on the film surface
[25–27]. The Ga atoms will be spontaneously reacted with
nitrogen (from decomposed ammonia) to newly form GaN crystal
nuclei on the surface (Fig. 5(a)) [25–27], which is most likely to
have wurtzite structure, stable at such elevated temperatures. The
formation of wurtzite GaN on the surface is clearly corroborated
by our present observations shown in Figs. 1(e)–(h) and 2(d)–(g),
which shows that, while the stem of the mushroom structure
Fig. 5. Schematic representation of the formation of the mushroom morphology
during the ramp anneal. The film break-up and the formation of wz GaN (indicated
in red) on the surface (a), followed by the growth of wz GaN at the expense of
zb GaN (indicated in blue) ((b), (c)), producing a mushroom structure (For
interpretation of the references to color in this figure legend, the reader is referred
to the web version of this article.).
105
remained zinc-blende, its cap was wurzitic. The wz GaN nuclei
formed on the island surface will be driven to grow at the expense
of the zb GaN layer below (Fig. 5(b) and (c)), because of the lower
structure energy of wz GaN than that of zb phase [28].
If the mushroom structure was isothermally annealed at
1050 1C, the stem was observed to become wurtzite and the
mushroom morphology collapsed (Fig. 4). Taking into account
that the mushroom is driven to form by the phase difference
between the cap and stem regions (Fig. 5), the transformation of
the stem into wurtzite means the disappearance of the driving
force, and as a result, the mushroom is expected to start to be
smoothed (indicated by an arrow in Fig. 4(a)) by mass transport
which would be totally driven by surface-energy minimization
[29,30]. Such mass transport would thus lead to a mound-like
structure, as shown in Fig. 4(a).
The HT anneal effect shown in Fig. 4 seems connected to the
question of why such a mushroom structure was not observed in
the literature. In the commercial MOCVD growth process, before
growth of HT GaN epitaxial layers, the buffer layer is ramped to a
high temperature (ramp anneal) and held at the high temperature
for some period of time (HT anneal) with the Ga source off
[27,31–33]. These two anneals are included in the so-called recrys-
tallization step [27,31–33]. The previous studies [27,31–33] reported
the morphological evolution of the buffer layer after the recrystalli-
zation step. We believe that, since the recrystallization step included
the HT anneal, those studies might have missed the mushroom
formation.
5. Concluding remarks
To conclude, by a simple ramp anneal, we have successfully
implemented a GaN template with the mushroom morphology. The
formation of the mushroom structure by the ramp anneal is inter-
preted as proceeding through the following stages: (i) decomposition
of GaN on the surface of the LT GaN buffer during the ramp anneal,
(ii) formation of wz GaN on the surface by the reaction between Ga
(from decomposed GaN) and nitrogen, and (iii) mass transport of GaN
from zb GaN to the stable wz GaN, forming the cap. We have
suggested that the mushroom morphology is formed during the ramp
anneal. If an isothermal anneal at high temperatures is done after the
ramp anneal, the mushroom structure is smoothed to become
mound-like, which is driven by surface energy minimization. Such
an isothermal HT anneal has been used after the ramp anneal as the
recystallization step in the literature. This may be the reason why the
mushroom morphology has not been reported so far. The Mg
incorporation induced a mushroom structure with a better surface
coverage than the u-GaN case. The present results provide a wider
perspective on the use of the LT GaN buffer layer, suggesting that
further improvements in fabricating the mushroom structure produce
a GaN substrate with a low dislocation density.
Acknowledgment
This research was supported by the Basic Science Research
Program through the National Research Foundation (NRF) of
Korea, funded by the Ministry of Education, Science and Technol-
ogy (2011–0027382) (Iljin).
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