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Datasheet

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2013 ROHM Co., Ltd. All rights reserved.
SiC Power Module
BSM180D12P2C101
lApplication lCircuit diagram
Motor drive
Inverter, Converter
Photovoltaics, wind power generation.
Induction heating equipment.
lFeatures
1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
lConstruction
This product is a half bridge module consisting of SiC-DMOS from ROHM.
lDimensions & Pin layout (Unit : mm)
567891
0
1
2
4
3
*Do not connnect to NC pin.
1
3,4
2
10
9
8(N.C)
5
6
7(N.C)
(M2.6 FOR SELF-TAPPING
SCREW)
1/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lAbsolute maximum ratings (Tj = 25C)
Symbol Unit
V
DSS
G-S short V
V
V
I
D
DC(Tc=60C) A
I
DRM Pulse (Tc=60C) 1ms *
2
A
I
S
Tc=60C A
A
A
Total power disspation *
4
Ptot Tc=25C W
Tj C
Tstg C
Main Terminals : M6 screw N m
N m
(*1) Measurement of Tc is to be done at the point just under the chip.
(*2) Repetition rate should be kept within the range where temperature rise of die should not exceed Tj max.
(*4) Tj is less than 150C (*5) Actual measurement is 3000Vrms/1sec. in accordance with UL1557.
lElectrical characteristics (Tj=25C)
Symbol Min. Typ. Max. Unit
Tj=25C 2.3 3.2 V
Tj=125C 3.3 4.4 V
I
DSS
- 10 mA
Tj=25C 5.4
Tj=125C 5.1
Tj=25C 2.3
Tj=125C 3.3
V
GS(th)
1.6 2.7 4.0 V
0.5 mA
-0.5 mA
td(on) 80 ns
tr 90 ns
trr 50 ns
td(off) 300 ns
tr 90 ns
Ciss V
DS
=10V, V
GS
=0V, f=1MHz 23 nF
Internal gate resistor R
Gint
Tj=25C - 1.15 - W
(*6) Measurement of Tc is to be done at the point just beneath the chip.
(*7) Typical value is measured by using thermally conductive grease of l=0.9W / (m K).
C/W
Case-to-heat sink
Thermal resistance
Rth(c-f)
Case to heat sink, per 1 module,
Thermal grease appied *
7
Mounting to heat shink : M5 screw
- 0.035 -
-
0.11 C/W
V
GS(on)
=18V, V
GS(off)
=0V
V
DS
=600V
I
D
=180A
R
G
=5.6W
inductive load
Switching characteristics
V
GS
=22V, V
DS
=0V
V
GS
= -6V, V
DS
=0V
Junction-to-case thermal
resistance
360
180
360
Limit
1200
22
-6
180
360
1130
-40 to150
-40 to125
2500 Visol
Terminals to baseplate,
f=60Hz AC 1min.
Conditions
Source current *
1
Storage temperature
V
GSS
D-S short
Junction temperature
Drain current *
1
Parameter
Drain-source voltage
Gate-source voltage(+)
Gate-source voltage(-)
I
SRM
*2*3
Pulse (Tc=60C) 1ms V
GS
=18V
Pulse (Tc=60C) 10ms V
GS
=0V
Mounting torque
Isolation voltage*
5
V
Input capacitance
Gate-source leakage current I
GSS
(*3) Duration of current conduction at gate-off state should not exceed 10msec.
Parameter
Drain cutoff current
Gate-source threshold voltage
Static drain-source on-state
voltage
Source-drain voltage
Rth(j-c)
DMOS (1/2 module) *
6
Vrms
4.5
3.5
V
DS(on)

V
GS
=18V, I
S
=180A
V
SD
Conditions
I
C
=180A, V
GS
=18V
V
DS
=1200V, V
GS
=0V
V
GS
=0V, I
S
=180A
V
DS
=10V, I
D
=35.2mA
2/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lWaveform for switching test
E
on
= I
D
V
DS
E
off
= I
D
V
DS
V
DS
I
D
V
GS
10%

10%

2%

90%

trr

10%

2%

2%

10%

2%

90%

td (on)

tr

tf

td (off)

Vsurge

90%

3/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lElectrical characteristic curves (Typical)

0
1
2
3
4
5
6
7
8
0 100 200 300 400
Tj=125C
V
GS
=18V
Tj=25C
0
1
2
3
4
5
6
7
8
9
10
10 15 20 25
I
D
=180A
Tj=25C
I
D
=120A
I
D
=80A
I
D
=40A
1
10
100
1000
0 2 4 6
Tj=125C
Tj=125C
Tj=25C
Tj=25C
V
GS
=0V
V
GS
=18V
0
50
100
150
200
250
300
350
400
0 2 4 6 8
Tj=25C
V
GS
=16V
V
GS
=18V
V
GS
=20V
V
GS
=14V
V
GS
=12V
V
GS
=10V
V
GS
=6V
V
GS
=8V
Fig.1 Typical Output Characteristics
D
r
a
i
n

C
u
r
r
e
n
t

:

I
D


[
A
]

Drain-Source Voltage : V
DS
[V]
Fig.2 Drain-Source Voltage vs. Drain Current
D
r
a
i
n
-
S
o
u
r
c
e

V
o
l
t
a
g
e

:

V
D
S


[
V
]

Drain Current : I
D
[A]
Fig.3 Drain-Source Voltage vs.
Gate-Source Voltage
D
r
a
i
n
-
S
o
u
r
c
e

V
o
l
t
a
g
e

:

V
D
S


[
V
]

Gate-Source Voltage : V
GS
[V]
Fig.4 Forward characteristic of Diode
S
o
u
r
c
e

C
u
r
r
e
n
t

:

I
s



[
A
]

Source-Drain Voltage : V
SD
[V]
4/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lElectrical characteristic curves (Typical)
1
10
100
1000
0 100 200 300 400
td(off)
tr
td(on)
V
DS
=600V
V
GS(on)
=18V
V
GS(off)
=0V
R
G
=5.6W
Inductive Load
tf
1
10
100
1000
0 100 200 300 400
V
DS
=600V
V
GS(on)
=18V
V
GS(off)
=0V
R
G
=5.6W
Inductive Load
tf
td(off)
tr
td(on)
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 1 2 3 4
Tj=25C
Tj=125C
V
DS
=10V
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0 1 2 3 4
Tj=25C
Tj=125C
V
DS
=10V
Gate-Source Voltage : V
GS
[V]
Fig.5 Drain Current vs. Gate-Source Voltage

D
r
a
i
n

C
u
r
r
e
n
t

:

I
D


[
A
]

Fig.6 Drain Current vs. Gate-Source Voltage

D
r
a
i
n

C
u
r
r
e
n
t

:

I
D


[
A
]

Gate-Source Voltage : V
GS
[V]
Drain Current : I
D
[A]
Fig.7 Switching Characteristics [ Tj=25C ]

S
w
i
t
c
h
i
n
g

T
i
m
e

:

t

[
n
s
]

Fig.8 Switching Characteristics [ Tj=125C ]
S
w
i
t
c
h
i
n
g

T
i
m
e

:

t

[
n
s
]

Drain Current : I
D
[A]
5/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lElectrical characteristic curves (Typical)
0
5
10
15
20
25
30
0 100 200 300 400
E
on
V
DS
=600V
V
GS(on)
=18V
V
GS(off)
=0V
R
G
=5.6W
Inductive Load
E
off
E
rr
0
5
10
15
20
25
30
0 100 200 300 400
E
on
E
off
E
rr
V
DS
=600V
V
GS(on)
=18V
V
GS(off)
=0V
R
G
=5.6W
Inductive Load
1
10
100
1000
1
10
100
1000
0 100 200 300 400
trr
Irr
V
DS
=600V
V
GS(on)
=18V
V
GS(off)
=0V
R
G
=5.6W
Inductive Load
1
10
100
1000
1
10
100
1000
0 100 200 300 400
trr
V
DS
=600V
V
GS(on)
=18V
V
GS(off)
=0V
R
G
=5.6W
Inductive Load
Irr
Fig.10 Switching Loss vs. Drain Current
[ Tj=125C ]

Fig.9 Switching Loss vs. Drain Current
[ Tj=25C ]
S
w
i
t
c
h
i
n
g

L
o
s
s



[
m
J
]

Drain Current : I
D
[A]
S
w
i
t
c
h
i
n
g

L
o
s
s



[
m
J
]

Drain Current : I
D
[A]
R
e
c
o
v
e
r
y

C
u
r
r
e
n
t

:

I
r
r


[
A
]

Fig.12 Recovery Characteristics vs.
Drain Current [ Tj=125C ]


R
e
c
o
v
e
r
y

C
u
r
r
e
n
t

:

I
r
r


[
A
]

R
e
c
o
v
e
r
y

T
i
m
e

:

t
r
r


[
n
s
]

Fig.11 Recovery Characteristics vs.
Drain Current [ Tj=25C ]
Drain Current : I
D
[A] Drain Current : I
D
[A]
R
e
c
o
v
e
r
y

T
i
m
e

:

t
r
r


[
n
s
]

6/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lElectrical characteristic curves (Typical)
10
100
1000
10000
1 10 100
td(off)
td(on)
V
DS
=600V
I
D
=180A
V
GS(on)
=18V
V
GS(off)
=0V
Inductive Load
tf
tr
10
100
1000
10000
1 10 100
V
DS
=600V
I
D
=180A
V
GS(on)
=18V
V
GS(off)
=0V
Inductive Load
td(off)
td(on)
tr
tf
0
2
4
6
8
10
12
14
16
18
20
1 10 100
V
DS
=600V
I
D
=180A
V
GS(on)
=18V
V
GS(off)
=0V
Inductive Load
E
on
E
off
E
rr
0
2
4
6
8
10
12
14
16
18
20
1 10 100
V
DS
=600V
I
D
=180A
V
GS(on)
=18V
V
GS(off)
=0V
Inductive Load
E
on
E
off
E
rr
Gate Resistance : R
G
[W] Gate Resistance : R
G
[W]
Fig.13 Switching Characteristics vs. Gate
Resistance [ Tj=25C ]
S
w
i
t
c
h
i
n
g

T
i
m
e

:

t

[
n
s
]

Fig.14 Switching Characteristics vs. Gate
Resistance [ Tj=125C ]

S
w
i
t
c
h
i
n
g

T
i
m
e

:

t

[
n
s
]

Fig.15 Switching Loss vs. Gate Resistance
[ Tj=25C ]
S
w
i
t
c
h
i
n
g

L
o
s
s



[
m
J
]

Gate Resistance : R
G
[W]
Fig.16 Switching Loss vs. Gate Resistance
[ Tj=125C ]
S
w
i
t
c
h
i
n
g

L
o
s
s



[
m
J
]

Gate Resistance : R
G
[W]
7/8
2013.06 - Rev.B

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2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
BSM180D12P2C101
lElectrical characteristic curves (Typical)
0.1
1
0.001 0.01 0.1 1 10
Single Pulse
Tc=25C
Per unit base : 0.11C/W
0
5
10
15
20
25
0 500 1000 1500
I
D
=180A
Tj=25C
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
0.01 1 100
Tj=25C
V
GS
=0V
C
oss
C
iss
C
rss
Fig.17 Typical Capacitance vs. Drain-Source
Voltage
C
a
p
a
s
i
t
a
n
c
e

:

C


[
n
F
]

Drain-Source Voltage : V
DS
[V]
Fig.18 Gate Charge Characteristics
[ Tj=25C ]
G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

:

V
G
S


[
V
]

Total Gate charge : Qg [nC]
Time [s]
Fig.19 Normalized Transient Thermal
Impedance
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e

:

R
t
h



Junction Temperature : Tj [C]
S
t
a
t
i
c

D
r
a
i
n

-

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e


:

R
D
S
(
o
n
)


[
W
]

Fig.20 Static Drain - Source On-State Resistance
vs. Junction Temperature
0
0.01
0.02
0.03
0.04
0.05
25 50 75 100 125 150 175 200
I
D
=180A
Pulsed
V
GS
=12V
V
GS
=14V
V
GS
=16V
V
GS
=18V
V
GS
=20V
8/8
2013.06 - Rev.B
R1102B
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2013 ROHM Co., Ltd. All rights reserved.
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The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
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Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
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