BULT118

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

I I I I

STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
3 2

APPLICATIONS: I ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING I FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

SOT-32

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
o

Value 700 400 9 2 4 1 2 45 -65 to 150 150

Uni t V V V A A A A W
o o

C C

June 2000

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THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.77 80
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol I CES V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage Test Cond ition s V CE = 700 V V CE = 700 V I E = 10 mA I C = 100 mA L = 25 mH Tj = 125 C 9 400
o

Min.

Typ .

Max. 100 500

Un it A A V V

V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat ) Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain

V CE = 400 V I C = 0.5 A IC = 1 A IC = 2 A I C = 0.5 A IC = 1 A IC = 2 A I C = 10 mA I C = 0.5 A IC = 2 A V CC = 125 V I B1 = 0.2 A IC = 1 A V BE = -5 V V c la mp = 300 V IB = 0.1 A IB = 0.2 A IB = 0.4 A IB = 0.1 A IB = 0.2 A IB = 0.4 A V CE = 5 V VCE = 5 V VCE = 5 V IC = 1 A IB2 = -0.2 A IB1 = 0.2 A L = 50 mH 10 10 8 0.4 3.2 0.25 0.8 0.16

250 0.5 1 1.5 1.0 1.2 1.3 50

A V V V V V V

V BE(s at)

h FE

tr ts tf ts tf

RESISTIVE LO AD Rise Time Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime

0.7 4.5 0.4

s s s s s

Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %

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Safe Operating Areas Derating Curve

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

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Inductive Fall Time Inductive Storage Time

Resistive Fall Time

Resistive Load Storage Time

Reverse Biased SOA

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Figure 1: Inductive Load Switching Test Circuits.

1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier

Figure 2: Resistive Load Switching Test Circuits.

1) Fast electronic switch 2) Non-inductive Resistor

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SOT-32 (TO-126) MECHANICAL DATA

mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629

DIM.

H2 c1

0016114
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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