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Dr.

Loren Betts Research Scientist Agilent Technologies


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Innovations in EDA Webcast Series X-Parameter* Case Study: GaN High Power Amplifier Design
Dr. Loren Betts Research Scientist Agilent Technologies

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Agilent EEsof EDA Overview July 2011 2009 Agilent Technologies, Inc.

*X-parameters is a trademark of Agilent Technologies, Inc.

Capturing the Imagination of the Industry


Solves real-world problems now Interoperable characterization, modeling, and design solutions Does for nonlinear design what S-parameters do for linear design Changing the way the industry works Continuous wave of innovations and award-winning research

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Presentation Outline

Amplifier Design Considerations using X-parameters


Industry Challenges Introduction to X-parameters

End-to-End Power Amplifier Design with X-parameters


Load-Dependent X-parameters High Power X-parameter Measurement Configuration Final PA Results

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Solutions: Next Generation Communication Systems


Power Amplifier Industry Challenges:
Research & development of new semiconductor processes for next generation components Develop smaller, higher power, more efficient active device designs Reduce cost and the development time to bring product to market

Issues:
Components are exhibiting more & more nonlinear behavior (often by design to increase efficiency) Models of newer technologies (such as GaN) may not exist or may not provide an accurate description of all the component behavior.

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How do I optimize desired Amplifier Specifications?


Ant

PAE (accuracy<3%)
Vc c Icc

Zo=50ohm

Matching

Matching Network

ACPR (accuracy<1dB) 2W max VSWR=2.5 max

Network

PAE= Power Added Efficiency ACPR= Adjacent Channel Power Ratio VSWR= Voltage Standing Wave Ratio

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Evolution of the Tools & Measurements

Patchwork
TOOLS: SS & Oscilloscope Grease pens and Polaroid cameras Slotted line Power meter

S-Parameters
TOOLS: Vector Network Analyzer MEASUREMENTS: Gain Input match Output match Isolation Transconductance Input capacitance

S-Parameters + NVNA Figures of Merit X-Parameters


TOOLS: NA SA/SS/NFA Power meter Oscilloscope DC Parametric Analyzer MEASUREMENTS: Gain compression, IP3, IMD PAE, ACPR, AM-PM, BER Constellation Diagram, EVM GD, NF, Spectral Re-growth ACLR, Hot S22 Source and Load-Pull

MEASUREMENTS: Bode plots Gain SWR Scalar network analyzers Y & Z parameters

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Nonlinear Component Behavior

A1
B1

A2

B2

and you want to build a system by cascading components together.


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S-parameters:
Linear Measurement, Modeling & Simulation
Measure with linear VNA: Small amplitude sinusoids
a1 Incident S 21 DUT Port 1 Transmitted S 12 Port 2 Transmitted b2 S 22 Reflected Incident S 11 Reflected

b1

a2

Linear Simulation: Matrix Multiplication

Model Parameters: Simple algebra

S-parameters b1 = S11a1 + S12a2 b2 = S21a1 + S22a2


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bi Sij = aj

ak = 0 k j

S-parameter measurements require that the S-parameters of the device do not change during measurement

x(t )

y (t )

a10 e100 b10

10 e1 11 e1

1 a1

S 21 S11 S 22 S12

1 b2

01 e2

0 b2 00 e2

e11 2 a1 2 e10 2

e101

1 b1

0 a2

bi = Sik ak

b1 b2

S11a1 + S12 a2 S 21a1 + S 22 a2


S12 a1 S 22 a2

S-Parameter Definition To solve, VNAs traditionally use a forward and reverse sweep (2 port error correction).

b1 S11 b = S 2 21

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If the S-parameters change .


(when sweeping in the forward and reverse directions when performing 2 port error correction)

then the resulting computation of the S-parameters are invalid

x(t )

y (t )

= b1 S11a1 + S12 a2 = b2 S 21a1 + S 22 a2


b1 S11 b = S 2 21
b fwd 1 b fwd 2
S 11 S21

Hot S22 This is often why customers are asking for Hot S22 because the match is changing versus input drive power and frequency (Nonlinear phenomena). Hot S22 traditionally measured at a frequency slightly offset from the large input drive signal. This still does not provide the complete picture. X-parameters are the solution.

S12 a1 S 22 a2
S12 a1fwd S22 a2fwd
rev 1

b1rev S11 = rev S b2 21


b fwd = 1 b2fwd

a1rev rev a2
rev 1

S12 S22

rev b2

a fwd 1 a fwd 2

rev a2

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X-parameters revolutionize the Characterization, Design, and Modeling of nonlinear components and systems X-parameters are the mathematically correct extension of Sparameters to large-signal conditions.
Measurement and simulation based, device independent, identifiable from a simple set of automated NVNA measurements or directly from ADS circuit-level designs Fully nonlinear (Magnitude and phase of distortion) Cascadable (correct behavior in even highly mismatched environment) Extremely accurate for high-frequency, distributed nonlinear devices
Measure X-parameters -orGenerate X-parameters from circuit-level designs X-parameter Component : Simulate using Xparameters ADS, SystemVue & Genesys: Design using X-parameters

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X-parameters

A1 B1

A2

B1k = F1k ( DC , A11 , A12 ,..., A21 , A22 ,...)


B2 k = F2 k ( DC , A11 , A12 ,..., A21 , A22 ,...)
Harmonic (or carrier) Index

B2

Port Index

Unifies S-parameters Load-Pull, Time-domain load-pull

The X-parameters provide a mathematically correct mapping of the A and B waves at ports, input powers, harmonics, DC bias, etc, etc.

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Scattering Parameters
S-Parameters Linear System Description

bi = Sik ak
k

= b1 S11a1 + S12 a2 = b2 S 21a1 + S 22 a2

X-Parameters Linear and Nonlinear System Description

bij

X ij( F ) ( A11 ) P j +

k ,l (1,1)

(X

(S ) ij , kl

(T ) * j +l ( A11 ) P j l akl + X ij ( ) A P a , kl 11 kl )

A11 = Large signal drive to the amplifier input port (port #1) at the fundamental frequency (#1)
Definitions
i = output port index j = output frequency index k = input port index l = input frequency index

For example: Means:

T X21,21

output port = 2 output frequency = 1 (fundamental) input port = 2 input frequency = 1 (fundamental)

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Measurement-Based Modeling & Design Flow


X-parameters enable predictive nonlinear design from NL data
NVNA
Nonlinear Measurements

ADS
Design and Simulation

Data File
X-parameter blocks
X-parameters enable accurate nonlinear simulation under small to moderate mismatch. (See later for large mismatch)
-15 -20 -25 140 150 145

25 20

76 75 74

15

73

-30 -35 -40 -45 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

.
135 130 125 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

10 5 0 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

72 71 70 69 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

. -20 -30 -40 -50

.
136 134 132 130 128

.
10 0 -10 -115 -120 -125 -130 -135 -140 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -30 -28 -26

-60 -70

126 124 122 120 118

.
-20 -30 -40
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

20 10 0 -10 -20 -30


.

-80 -90 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 .
-20 -40 -60 -80

-6

-4

-24 -22 -20 -18 -16 -14 -12

-10

-8

-6

-4

.
10 0
160 150

170

14 12 10 8 6 4 2 0 -2 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

-10 -20 -30 -40 -50

-40 -15 -10 -5 0 . 5 10 15 20

140 130 120 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

-100 -120

-60 -70

allowing prediction of component behavior in complicated nonlinear circuits. IMD / ACPR exact in narrow-band limit

X-parameters: the same use model as S-parameters but much more powerful
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Presentation Outline

Amplifier Design Considerations using X-parameters


Industry Challenges Introduction to X-parameters

End-to-End Power Amplifier Design with X-parameters


Load-Dependent X-parameters High Power X-parameter Measurement Configuration Final PA Results

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Load-Dependent X-parameters
Some components (un-matched transistors) may require input and output tuners because their match is far from 50 ohm. This requires an X-parameter model that also includes dependence on the load impedance supplied to the output of the component. This is accomplished by adding an impedance tuner to the output of the component. Depending on the component, and the class of operation, a multi-harmonic tuner may not be required. The source tuner can be fixed at a single impedance that is close to the conjugate match point and a power sweep performed to vary the available power to the component. X-Parameters definition with port 2 gamma dependence
(F) bij = X ij ( DC , A11 , 2 ) P j +

k , l (1,1)

(X

(S ) ij , kl

j+l (T ) * ( DC , A11 , 2 ) P j l akl + X ij ( DC , A , ) P a , kl 11 2 kl

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Load-Dependent X-parameter Measurements


A11 is swept through a power sweep 2 is swept through a set of fundamental frequency impedances supplied by tuner. All other harmonic impedances are uncontrolled
1, fixed
2

A11

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Load-Dependent X-Parameters of a FET


Measurements X-par Simulation
Measured and Simulated Voltage and Current Waveforms

SimulatedVoltage MeasuredVoltage

Pout Contour (dBm)

20 15 10 5 0 -5 0.0 0.2 0.4 0.6 0.8 1.0

0.30 0.25 0.20 0.15 0.10 0.05

SimulatedCurrent MeasuredCurrent

time, nsec
Measured and Simulated Voltage and Current Waveforms 0.5 16
SimulatedVoltage MeasuredVoltage
Measured and Simulated Dynamic Load Line
0.30

12 10 8 6 4 2 0.0 0.2 0.4 0.6 0.8 1.0 time, nsec

0.4 0.3 0.2 0.1 0.0

SimulatedCurrent MeasuredCurrent

14

0.25 0.20 0.15 0.10 0.05 -2 0 2 4 6 8 10 12 14 16 18

SimulatedCurrent MeasuredCurrent

MeasuredVoltage SimulatedVoltage

Experimental Harmonic Balance


G. Simpson et al IEEE ARFTG Conference, December, 2008

X-parameters unify S-parameters and load-pull

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X-parameter Harmonic Load-Tuning Predictions


Fundamental Output Magnitude Second Harmonic Output Magnitude Cree CGH40010 10 W RF Power GaN HEMT
Contours vs. 2nd Harmonic Load (Fixed input power and fundamental load)

X-Parameter Prediction: Blue Measured with Harmonic Load Pull System: Red Harmonic load-pull may be unnecessary! Simpler, cheaper, faster alternatives exist

J. Horn et al, IEEE Power Amplifier Symposium, September, 2009


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GaN HEMT Load-Dependent X-parameter Model


GPIB Bias Tees

PNA-X
NVNA Firmware
USB

DC Supply

Maury Software

Cree CGH40010 GaN HEMT 10 W packaged transistor


900 MHz Measure Load-dependent

Maury Tuner

DUT

Maury Tuner
9 load states at f1

X-parameter file taken into ADS for independent validation


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X-parameters vs power at 9 impedances 4 harmonics measured probe tones at 2nd and 3rd harmonics harmonic impedances uncontrolled

Harmonic Load-pull Setup: For Validation Only


GPIB Bias Tees Waveforms measured versus power at each set of 729 harmonic loads as controlled independently by the tuners. Fundamental, second, and third complex impedances set independently

PNA-X
NVNA Firmware
USB

DC Supply

Maury Software

Maury Tuner

DUT

Maury Tuner Z1
9 states

Maury Tuner Z2
9 states

Maury Tuner Z3
9 states

J. Horn et al CSICS2010, Oct. 2010

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Load-Dependent X-parameters Vs. Harmonic Load-pull


Load-dependent X-parameters One output tuner to vary load at fundamental frequency. At each load inject small tones at 2nd and 3rd harmonic frequencies (9x(1+2x2) = 45 measurements, actually ~125 measurements) Measured DC 4th harmonic Take into ADS. Present 729 independent loads to model Harmonic load-pull measurements Three output tuners to vary loads at fundamental, second, and third harmonics independently (9x9x9 = 729 measurements) Measured DC - 4th harmonic

Compare waveforms, PAE, dynamic load-lines, etc.


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Prediction of GaN HEMT Harmonic Load-dependence from Fundamental-only Load-dependent X-parameters


80

PAE
Harmonic loads

70 60

Z1 Z2 Z3

50 40

Cree CGH40010 GaN HEMT


y

30 20 10 4
70 60 50 40 1.0

10

2.0

Pin (available)

12

14

16

18

20
2.0

Id [A]
1.5 1.0

Vd

Id

Vd

Id
1.5

0.5

30
0.0

0.5

20 0.0 10
0 10 20 30 40 50 60 70

-0.5

Vd [V]
Courtesy of J. Horn

0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

-0.5

Time (nanoseconds) X-parameter model Harmonic time-domain load-pull measurements

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Prediction of GaN HEMT Harmonic Load-dependence from Fundamental-only Load-dependent X-parameters


70 60 50 40 30 20 10 4 6 8 10 12 14 16 18 20

PAE

Z1 Z2 Z3

Harmonic loads

Cree CGH40010 GaN HEMT

Dynamic Load Line


2.0

Pin (available)
70

Id

Vd

2.0

Id [A]

1.5

Vd

60 50

Id
1.5

1.0

40 30 20

1.0

0.5

0.5

0.0

10 0
-10 0 10 20 30 40 50 60 70

0.0

0.5

Vd [V] Vary second harmonic output impedance (keep others fixed)

-10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

-0.5

Time (nanoseconds)

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Prediction of GaN HEMT Harmonic Load-dependence from Fundamental-only Load-dependent X-parameters


PAE vs. Available Input Power
70 60 50 40 30 20 10 4
70

PAE

Z1 Z2 Z3

Harmonic loads

Cree CGH40010 GaN HEMT

10

12

14

16

18

20

Pin (available)
y a
2.0

c oad

Vd
60 50 40

Id

Id 2.0
1.5

Vd

Id [A]
1.5 1.0

1.0 0.5

0.5

30 20 10 0
0 10 20 30 40 50 60 70

0.0 -0.5

0.0

-0.5

-1.0

-1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Vd [V]
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Time (nanoseconds)

Prediction of GaN HEMT Harmonic Load-dependence from Fundamental-only Load-dependent X-parameters


70 60 50

PAE

Z1 Z2 Z3

Harmonic loads

_
40

Cree CGH40010 GaN HEMT

30 20 10 4
70

10

Pin (available)

12

14

16

18

20
2.0

2.0

Id [A]
1.5

Vd 60
50 40 30

Id

Vd

1.5

Id

1.0

1.0

0.5

0.5

20 0.0
0.0

10 0
0 10 20

-0.5

-0.5 0.0 0.2 0.4 0.6

Vd [V]

30

40

50

60

70

Time (nanoseconds)

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Vary third harmonic output impedance (keep others fixed)

Page 27

Implications of Arbitrary Load-dependent X-parameters


Input and output harmonic load tuning dependence predictable Harmonic load-pull may be unnecessary for many apps. Source pull may be unnecessary (apart from power transfer) Complementary approach to compact nonlinear device models

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Power Amplifier Design


Goal: Design a power amplifier using X-parameter measurements of a transistor.
X-parameter model measured of a Cree CGH40045F GaN transistor using NVNA. Desired Design Goals: Frequency = 1.2 GHz Output power > 45 dBm PAE > 60% Class AB Linearity and other performance parameters were not part of this first phase design. Note: Cree transistor is capable of higher performance than Desired Design Specifications. Refer to Cree datasheet for more information.
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Power Amplifier Design


Total PA design completed in ADS:
1. Simulated impedance contours of output power and PAE at fundamental and harmonic frequencies at input (gate) and output ports (drain) 2. Simulated impedance contours used to determine appropriate termination impedances at fundamental and harmonic frequencies at input (gate) and output ports (drain) to maximize PAE and output power 3. PCB designed with appropriate matching from (2) 4. Final PA assembled and compared against simulation

Page 30

NVNA X-parameter System Power Budget (120 W)


-18 dBm to +2 dBm (DT) -18 dBm (ET)
Couplers - minicircuits ZGDC10-362HP+ CF ~ -10 dB Pmax >+ 53 dBm

+10 dBm to +32 dBm

Port 1
2x20 dB (< 1 W)
AR 5S1G4 G = 30 dB at lowest gain Pmax = +37 dBm (5 Watts) Frequency = .8 4.2 GHz

Tuner
Bias 10 dB (< 1 W)
+12 dBm (ET) at +32 dBm input

R1
-20 dBm

30 dB
Cree CGH40045F GaN HEMT F = 1.2 GHz Gain ~ 12-16 dB Pout ~ 46 dBm

-20 dBm

DUT

NVNA

AR 60S1G4 G = max 38 dB min 33 dB at 0% Pmax = +48 dBm (60 Watts) Frequency = .8 4.2 GHz

-20 dBm

-20 dBm

R3
+36 dBm +36 dBm

20 dB
+46 dBm (max)

2x20 dB (< 1 W)

40 dB (10 W)

+26 dBm (ET)

Port 2
10 dB (100 Watt)
1 dBm (ET) at G=35 dB
Couplers - minicircuits ZGDC10-362HP+ CF ~ -10 dB Pmax >+ 53 dBm

Tuner
Bias

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High Power X-parameter Measurement System

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Model Verification
Verification of the measured X-parameter model:
1. Make measurements of component (transistor). These are not Xparameter measurements but instead measurements of other parameters like A and B waves, output power, PAE or another parameter of your choice. 2. Record the input power, impedances (input and output ports, fundamental and harmonic) and bias used during the measurements in (1). 3. Place these impedances in the simulator as terminations of the Xparameter model and sweep power over that used in measurement range.

Note: Extrapolation boundaries is a topic for another day

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X-parameter Model Verification - Circuit Template

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X-parameter Model Verification - Results


Verification of X-parameter Model
46
Measured

2.0
Simulated

Delivered Power (dBm)

Drain Current (Amps)

44

42

40

38 20 22 24 26 28 30

0.7

Incident Power (dBm)

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Simulated Fundamental Pout and PAE Contours


Maximum Power and contour levels, dBm:
46.05 46.00 45.50 45.00 44.50 44.00 43.50 43.00 42.50

Output Power > 45 dBm

Power_contours PAE_contours

E P

Maximum PAE and contour levels, %:


70.812 68.000 64.000 60.000 56.000 P 52.000 level=46.029871, number=52 48.000 44.000 40.000

PAE > 70 %
All other impedances in the simulator set to 50 ohm except fundamental input impedance (~2 ohm).

E level=70.711610, number=65

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Simulated Parameters
ADS Amplifier DesignGuide
Output Spectrum, dBm 50 0 -50 -100 15 -150 38 39 40 41 42 43 44 45 46 Fund. Output Power, dBm 19 18 17 16
m2

Transducer Power Gain, dB m1

Gain Compression between markers, dB

PAE, % 80 70 60 1.8 1.6 1.4 1.2 1.0 0.8 0.6 38 39 40 41 42 43 44 45 46 38 39

High Supply Current

3.220

Output Power at Marker m2, dBm

50 40 30 Fund. Output Power, dBm

45.70

40

41

42

43

44

45

46

40 30 20

ts(Vload), V ts(Vinput), V

0 -10 -20 -30 -40 0.0

Spectrum[2] Spectrum[3] Spectrum[1]

10

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0.000 20.0

500.M 21.0

Input and Output Voltage Waveforms 50 45 40 35 30 25 20 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

1.00G 22.0

1.50G 23.0

RF Power Selector m3

RFpower[0,::]

2.00G 24.0

2.50G 25.0

time, nsec

3.00G 26.0

3.50G 27.0

4.00G 28.0 29.0 30.0

Fund. Output Power, dBm High Supply Current Thermal Dissipation Watts

Fundamental Frequency

Available Source Power dBm

Fundamental Output Power dBm

Transducer Power Gain

Power- Added Efficiency, %

DC Power Consumpt. Watts

1.200 GHz

20.000 21.000 22.000 23.000 24.000 25.000 26.000 27.000 28.000 29.000 30.000

38.916 39.826 40.717 41.596 42.460 43.318 44.122 44.775 45.180 45.472 45.696

18.916 18.826 18.717 18.596 18.460 18.318 18.122 17.775 17.180 16.472 15.696

37.953 42.019 46.465 51.376 56.108 61.767 67.226 71.322 72.659 73.308 74.317

20.281 22.583 25.069 27.747 30.984 34.283 37.877 41.453 44.579 47.124 48.783

0.724 0.807 0.895 0.991 1.107 1.225 1.353 1.481 1.592 1.683 1.743

12.547 13.047 13.361 13.415 13.500 12.977 12.242 11.653 11.865 12.142 11.988

Fundamental and Third Harm., dBm

10 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 30.0 RFpower

Final Power Amplifier


PAE could be improved based on a better physical termination impedance at the 2nd harmonic at the input in the next design. However, there is a tradeoff between the bandwidth of the impedance and PAE (i.e. PAE could be very peaky over a very narrow frequency bandwidth)
Courtesy of University of Waterloo

Page 38

X-parameter Measurements Rules-of-Thumb


Leave enough pre-amplifier linear gain for extraction and drive tones
If the pre-amplifier is saturated with the drive signal then adding the extraction signal will degrade X-parameters. Generally seen during a power sweep where there is divergence between simulated and measured results at the higher end of the power sweep (watch receiver compression though).

Simulation termination impedance


When comparing simulated as and bs from X-parameters against measured as and bs it is critical that the terminations in the simulation match that used during measurement. Ensure proper calibration and de-embedding techniques where applicable.

Calibration procedure using 8 term error model, tuners and pre-amplifiers


Often pre-amplifiers are removed behind the couplers during calibration and then placed back in-line after the calibration procedure is complete. This may effect the tuner characterization and therefore the source and load impedances behind the tuners should be determined from the NVNA and accounted for to ensure proper applied impedance to the component by the tuners.
Page 39

Nonlinear Vector Network Analyzer (NVNA)


Vector (amplitude/phase) corrected nonlinear measurements from 10 MHz to 13.5, 26.5 43.5 50 GHz
Calibrated absolute amplitude and relative phase (crossfrequency relative phase) of measured spectra traceable to standards lab Up to 50 GHz of vector corrected bandwidth for time domain waveforms of voltages and currents of DUT Multi-Envelope domain measurements for measurement and analysis of memory effects
NVNA FW

X-parameters: Extension of Scattering parameters into the nonlinear region providing unique insight into nonlinear DUT behavior X-parameter extraction into ADS nonlinear simulation and design NVNA can control external DC instruments (sweep and sense) during RF measurements

New phase calibration standard

Standard PNA-X with New Nonlinear features and capability

Page 40

X-Parameter Technology in Agilent EEsof EDAs Platforms

Page 41

ADS X-Parameter Generator Available in ADS 2009 Update 1


Generate nonlinear X-parameter models in ADS
Augments Agilents measurement-based X-parameter generation (PNA-X Series Nonlinear Vector Network Analyzer) Easy to setup and run Multi-tone Multi-port: No limits on the number of ports, frequency or power Models amplifiers, mixers, and transceivers with frequency conversion

Page 42

X-parameter technology is expanding rapidly


Agilent breakthroughs:
Load-dependent X-parameters 50 GHz Agilent NVNA High-Power X-parameter measurements X-parameter generator in ADS Simulation of XnP component in ADS, Genesys & SystemVue Two-tone measured X-parameters Three-port measured X-parameters Memory: Dynamic X-parameters Education, training, app. Notes

Page 43

Questions?
Measure X-parameters with Agilents NVNA Design and simulate with measured or generated Xparameters in ADS

Design with measured X-parameters in ADS

Page 44

For More Information


X-parameters www.agilent.com/find/x-parameters Nonlinear Vector Network Analyzer www.agilent.com/find/nvna ADS MMIC design seminar (click on X-parameters link) www.agilent.com/find/eesof-mmic-seminar X-Parameters Aid MMIC Design http://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID =22811 X-Parameter YouTube Videos http://www.youtube.com/user/AgilentEEsof Trademark Usage, Open Documentation & Partnerships http://www.agilent.com/find/x-parameters-info

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Selected References and Links


1. D. E. Root, J. Horn, L. Betts, C. Gillease, J. Verspecht, X-parameters: The new paradigm for measurement, modeling, and design of nonlinear RF and microwave components, Microwave Engineering Europe, December 2008 pp 16-21. http://www.nxtbook.com/nxtbooks/cmp/mwee1208/#/16 2. D. E. Root, X-parameters: Commercial implementations of the latest technology enable mainstream applications Microwave Journal, Sept. 2009, http://www.mwjournal.com/search/ExpertAdvice.asp?HH_ID=RES_200&SearchWord=root 3. J. Verspecht and D. E. Root, Poly-Harmonic Distortion Modeling, in IEEE Microwave Theory and Techniques Microwave Magazine, June, 2006. 4. D . E. Root, J. Verspecht, D. Sharrit, J. Wood, and A. Cognata, Broad-Band, Poly-Harmonic Distortion (PHD) Behavioral Models from Fast Automated Simulations and Large-Signal Vectorial Network Measurements, IEEE Transactions on Microwave Theory and Techniques Vol. 53. No. 11, November, 2005 pp. 3656-3664 5. J. Verspecht, J. Horn, L. Betts, D. Gunyan, R. Pollard, C. Gillease, D. E. Root, Extension of X-parameters to include long-term dynamic memory effects, IEEE MTT-S International Microwave Symposium Digest, 2009. pp 741-744, June, 2009 6. J. Verspecht, J. Horn, D. E. Root A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated Signals, Proceedings of the 75th IEEE MTT-S ARFTG Conference, May, 2010 7. J. Xu, J. Horn, M. Iwamoto, D. E. Root, Large-signal FET Model with Multiple Time Scale Dynamics from Nonlinear Vector Network Analyzer Data, IEEE MTT-S International Microwave Symposium Digest, May, 2010. 8. J. Horn, S. Woodington, R. Saini, J. Benedikt, P. J. Tasker, and D. E. Root; Harmonic Load-Tuning Predictions from Xparameters, IEEE PA Symposium, San Diego, Sept. 2009 9. D. Gunyan , J. Horn, J. Xu, and D. E. Root, Nonlinear Validation of Arbitrary Load X-parameter and Measurement-Based Device Models, IEEE MTT-S ARFTG Conference, Boston, MA, June 2009 10. G. Simpson, J. Horn, D. Gunyan, and D. E. Root, Load-Pull + NVNA = Enhanced X-Parameters for PA Designs with High Mismatch and Technology-Independent Large-Signal Device Models, IEEE ARFTG Conference, Portland, OR December 2008. 11. J. Horn, J. Verspecht, D. Gunyan, L. Betts, D. E. Root, and J. Eriksson, X-Parameter Measurement and Simulation of a GSM Handset Amplifier, 2008 European Microwave Conference Digest Amsterdam, October, 2008 12. J. Verspecht, D. Gunyan, J. Horn, J. Xu, A. Cognata, and D.E. Root, Multi-tone, Multi-Port, and Dynamic Memory Enhancements to PHD Nonlinear Behavioral Models from Large-Signal Measurements and Simulations, 2007 IEEE MTT-S Int. Microwave Symposium Digest, Honolulu, HI, USA, June 2007. 13. D. E. Root, J. Xu, J. Horn, M. Iwamoto, and G. Simpson, Device Modeling with NVNAs and X-parameters, 2010 IEEE MTT-S INMMiC Conference, Gtenborg, Sweden, April 26, 2010 14. J. Horn, G. Simpson, D. E. Root, GaN Device Modeling with X-parameters, Accepted for publication 2010IEEE CSICS, Oct. 2010

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Thank You to Supporting Partners


AR RF/Microwave Instrumentation Cree Focus Microwaves Maury Microwave Mini-Circuits University of Waterloo

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