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Innovations in EDA Webcast Series X-Parameter* Case Study: GaN High Power Amplifier Design
Dr. Loren Betts Research Scientist Agilent Technologies
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Agilent EEsof EDA Overview July 2011 2009 Agilent Technologies, Inc.
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Presentation Outline
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Issues:
Components are exhibiting more & more nonlinear behavior (often by design to increase efficiency) Models of newer technologies (such as GaN) may not exist or may not provide an accurate description of all the component behavior.
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PAE (accuracy<3%)
Vc c Icc
Zo=50ohm
Matching
Matching Network
Network
PAE= Power Added Efficiency ACPR= Adjacent Channel Power Ratio VSWR= Voltage Standing Wave Ratio
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Patchwork
TOOLS: SS & Oscilloscope Grease pens and Polaroid cameras Slotted line Power meter
S-Parameters
TOOLS: Vector Network Analyzer MEASUREMENTS: Gain Input match Output match Isolation Transconductance Input capacitance
MEASUREMENTS: Bode plots Gain SWR Scalar network analyzers Y & Z parameters
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A1
B1
A2
B2
S-parameters:
Linear Measurement, Modeling & Simulation
Measure with linear VNA: Small amplitude sinusoids
a1 Incident S 21 DUT Port 1 Transmitted S 12 Port 2 Transmitted b2 S 22 Reflected Incident S 11 Reflected
b1
a2
bi Sij = aj
ak = 0 k j
S-parameter measurements require that the S-parameters of the device do not change during measurement
x(t )
y (t )
10 e1 11 e1
1 a1
S 21 S11 S 22 S12
1 b2
01 e2
0 b2 00 e2
e11 2 a1 2 e10 2
e101
1 b1
0 a2
bi = Sik ak
b1 b2
S-Parameter Definition To solve, VNAs traditionally use a forward and reverse sweep (2 port error correction).
b1 S11 b = S 2 21
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x(t )
y (t )
Hot S22 This is often why customers are asking for Hot S22 because the match is changing versus input drive power and frequency (Nonlinear phenomena). Hot S22 traditionally measured at a frequency slightly offset from the large input drive signal. This still does not provide the complete picture. X-parameters are the solution.
S12 a1 S 22 a2
S12 a1fwd S22 a2fwd
rev 1
a1rev rev a2
rev 1
S12 S22
rev b2
a fwd 1 a fwd 2
rev a2
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X-parameters revolutionize the Characterization, Design, and Modeling of nonlinear components and systems X-parameters are the mathematically correct extension of Sparameters to large-signal conditions.
Measurement and simulation based, device independent, identifiable from a simple set of automated NVNA measurements or directly from ADS circuit-level designs Fully nonlinear (Magnitude and phase of distortion) Cascadable (correct behavior in even highly mismatched environment) Extremely accurate for high-frequency, distributed nonlinear devices
Measure X-parameters -orGenerate X-parameters from circuit-level designs X-parameter Component : Simulate using Xparameters ADS, SystemVue & Genesys: Design using X-parameters
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X-parameters
A1 B1
A2
B2
Port Index
The X-parameters provide a mathematically correct mapping of the A and B waves at ports, input powers, harmonics, DC bias, etc, etc.
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Scattering Parameters
S-Parameters Linear System Description
bi = Sik ak
k
bij
X ij( F ) ( A11 ) P j +
k ,l (1,1)
(X
(S ) ij , kl
(T ) * j +l ( A11 ) P j l akl + X ij ( ) A P a , kl 11 kl )
A11 = Large signal drive to the amplifier input port (port #1) at the fundamental frequency (#1)
Definitions
i = output port index j = output frequency index k = input port index l = input frequency index
T X21,21
output port = 2 output frequency = 1 (fundamental) input port = 2 input frequency = 1 (fundamental)
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ADS
Design and Simulation
Data File
X-parameter blocks
X-parameters enable accurate nonlinear simulation under small to moderate mismatch. (See later for large mismatch)
-15 -20 -25 140 150 145
25 20
76 75 74
15
73
-30 -35 -40 -45 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
.
135 130 125 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
10 5 0 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
72 71 70 69 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
.
136 134 132 130 128
.
10 0 -10 -115 -120 -125 -130 -135 -140 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -30 -28 -26
-60 -70
.
-20 -30 -40
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
-80 -90 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 .
-20 -40 -60 -80
-6
-4
-10
-8
-6
-4
.
10 0
160 150
170
14 12 10 8 6 4 2 0 -2 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
140 130 120 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
-100 -120
-60 -70
allowing prediction of component behavior in complicated nonlinear circuits. IMD / ACPR exact in narrow-band limit
X-parameters: the same use model as S-parameters but much more powerful
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Presentation Outline
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Load-Dependent X-parameters
Some components (un-matched transistors) may require input and output tuners because their match is far from 50 ohm. This requires an X-parameter model that also includes dependence on the load impedance supplied to the output of the component. This is accomplished by adding an impedance tuner to the output of the component. Depending on the component, and the class of operation, a multi-harmonic tuner may not be required. The source tuner can be fixed at a single impedance that is close to the conjugate match point and a power sweep performed to vary the available power to the component. X-Parameters definition with port 2 gamma dependence
(F) bij = X ij ( DC , A11 , 2 ) P j +
k , l (1,1)
(X
(S ) ij , kl
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A11
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SimulatedVoltage MeasuredVoltage
SimulatedCurrent MeasuredCurrent
time, nsec
Measured and Simulated Voltage and Current Waveforms 0.5 16
SimulatedVoltage MeasuredVoltage
Measured and Simulated Dynamic Load Line
0.30
SimulatedCurrent MeasuredCurrent
14
SimulatedCurrent MeasuredCurrent
MeasuredVoltage SimulatedVoltage
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X-Parameter Prediction: Blue Measured with Harmonic Load Pull System: Red Harmonic load-pull may be unnecessary! Simpler, cheaper, faster alternatives exist
PNA-X
NVNA Firmware
USB
DC Supply
Maury Software
Maury Tuner
DUT
Maury Tuner
9 load states at f1
X-parameters vs power at 9 impedances 4 harmonics measured probe tones at 2nd and 3rd harmonics harmonic impedances uncontrolled
PNA-X
NVNA Firmware
USB
DC Supply
Maury Software
Maury Tuner
DUT
Maury Tuner Z1
9 states
Maury Tuner Z2
9 states
Maury Tuner Z3
9 states
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PAE
Harmonic loads
70 60
Z1 Z2 Z3
50 40
30 20 10 4
70 60 50 40 1.0
10
2.0
Pin (available)
12
14
16
18
20
2.0
Id [A]
1.5 1.0
Vd
Id
Vd
Id
1.5
0.5
30
0.0
0.5
20 0.0 10
0 10 20 30 40 50 60 70
-0.5
Vd [V]
Courtesy of J. Horn
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
-0.5
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PAE
Z1 Z2 Z3
Harmonic loads
Pin (available)
70
Id
Vd
2.0
Id [A]
1.5
Vd
60 50
Id
1.5
1.0
40 30 20
1.0
0.5
0.5
0.0
10 0
-10 0 10 20 30 40 50 60 70
0.0
0.5
-10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
-0.5
Time (nanoseconds)
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PAE
Z1 Z2 Z3
Harmonic loads
10
12
14
16
18
20
Pin (available)
y a
2.0
c oad
Vd
60 50 40
Id
Id 2.0
1.5
Vd
Id [A]
1.5 1.0
1.0 0.5
0.5
30 20 10 0
0 10 20 30 40 50 60 70
0.0 -0.5
0.0
-0.5
-1.0
-1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Vd [V]
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Time (nanoseconds)
PAE
Z1 Z2 Z3
Harmonic loads
_
40
30 20 10 4
70
10
Pin (available)
12
14
16
18
20
2.0
2.0
Id [A]
1.5
Vd 60
50 40 30
Id
Vd
1.5
Id
1.0
1.0
0.5
0.5
20 0.0
0.0
10 0
0 10 20
-0.5
Vd [V]
30
40
50
60
70
Time (nanoseconds)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
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Port 1
2x20 dB (< 1 W)
AR 5S1G4 G = 30 dB at lowest gain Pmax = +37 dBm (5 Watts) Frequency = .8 4.2 GHz
Tuner
Bias 10 dB (< 1 W)
+12 dBm (ET) at +32 dBm input
R1
-20 dBm
30 dB
Cree CGH40045F GaN HEMT F = 1.2 GHz Gain ~ 12-16 dB Pout ~ 46 dBm
-20 dBm
DUT
NVNA
AR 60S1G4 G = max 38 dB min 33 dB at 0% Pmax = +48 dBm (60 Watts) Frequency = .8 4.2 GHz
-20 dBm
-20 dBm
R3
+36 dBm +36 dBm
20 dB
+46 dBm (max)
2x20 dB (< 1 W)
40 dB (10 W)
Port 2
10 dB (100 Watt)
1 dBm (ET) at G=35 dB
Couplers - minicircuits ZGDC10-362HP+ CF ~ -10 dB Pmax >+ 53 dBm
Tuner
Bias
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Model Verification
Verification of the measured X-parameter model:
1. Make measurements of component (transistor). These are not Xparameter measurements but instead measurements of other parameters like A and B waves, output power, PAE or another parameter of your choice. 2. Record the input power, impedances (input and output ports, fundamental and harmonic) and bias used during the measurements in (1). 3. Place these impedances in the simulator as terminations of the Xparameter model and sweep power over that used in measurement range.
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2.0
Simulated
44
42
40
38 20 22 24 26 28 30
0.7
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Power_contours PAE_contours
E P
PAE > 70 %
All other impedances in the simulator set to 50 ohm except fundamental input impedance (~2 ohm).
E level=70.711610, number=65
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Simulated Parameters
ADS Amplifier DesignGuide
Output Spectrum, dBm 50 0 -50 -100 15 -150 38 39 40 41 42 43 44 45 46 Fund. Output Power, dBm 19 18 17 16
m2
3.220
45.70
40
41
42
43
44
45
46
40 30 20
ts(Vload), V ts(Vinput), V
10
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0.000 20.0
500.M 21.0
Input and Output Voltage Waveforms 50 45 40 35 30 25 20 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1.00G 22.0
1.50G 23.0
RF Power Selector m3
RFpower[0,::]
2.00G 24.0
2.50G 25.0
time, nsec
3.00G 26.0
3.50G 27.0
Fund. Output Power, dBm High Supply Current Thermal Dissipation Watts
Fundamental Frequency
1.200 GHz
20.000 21.000 22.000 23.000 24.000 25.000 26.000 27.000 28.000 29.000 30.000
38.916 39.826 40.717 41.596 42.460 43.318 44.122 44.775 45.180 45.472 45.696
18.916 18.826 18.717 18.596 18.460 18.318 18.122 17.775 17.180 16.472 15.696
37.953 42.019 46.465 51.376 56.108 61.767 67.226 71.322 72.659 73.308 74.317
20.281 22.583 25.069 27.747 30.984 34.283 37.877 41.453 44.579 47.124 48.783
0.724 0.807 0.895 0.991 1.107 1.225 1.353 1.481 1.592 1.683 1.743
12.547 13.047 13.361 13.415 13.500 12.977 12.242 11.653 11.865 12.142 11.988
10 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 30.0 RFpower
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X-parameters: Extension of Scattering parameters into the nonlinear region providing unique insight into nonlinear DUT behavior X-parameter extraction into ADS nonlinear simulation and design NVNA can control external DC instruments (sweep and sense) during RF measurements
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Questions?
Measure X-parameters with Agilents NVNA Design and simulate with measured or generated Xparameters in ADS
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