2N6387, 2N6388 Plastic Medium-Power Silicon Transistors

These devices are designed for generalpurpose amplifier and lowspeed switching applications.
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High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) 2N6387 = 80 Vdc (Min) 2N6388 Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc 2N6387, 2N6388 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors TO220AB Compact Package PbFree Packages are Available*

DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 80 VOLTS

MARKING DIAGRAM

MAXIMUM RATINGS (Note 1)

Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 2N6387 2N6388 2N6387 2N6388 Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg Value 60 80 60 80 5.0 10 15 250 65 0.52 2.0 0.016 65 to +150 Unit Vdc Vdc Vdc Adc mAdc W W/C W W/C C 2N6387 Symbol RqJC Max 1.92 Unit _C/W 2N6387G 2N6388 2N6388G

4 TO220AB CASE 221A STYLE 1 1 2 2N638xG AYWW

3 2N638x = Device Code x = 7 or 8 G = PbFree Package A = Assembly Location Y = Year WW = Work Week

ORDERING INFORMATION
Device Package TO220AB TO220AB (PbFree) TO220AB TO220AB (PbFree) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, JunctiontoCase

Thermal Resistance, JunctiontoAmbient 62.5 RqJA _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data.

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2011

October, 2011 Rev. 14

Publication Order Number: 2N6387/D

2N6387, 2N6388
TA 4.0 PD, POWER DISSIPATION (WATTS) TC 80

3.0

60 TC

2.0

40 TA

1.0

20

20

40

60 80 100 T, TEMPERATURE (C)

120

140

160

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc CollectorEmitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6387 2N6388 2N6387 2N6388 VCEO(sus) 60 80 ICEO mAdc 1.0 1.0 Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387 2N6388 2N6387 2N6388 ICEX 300 300 3.0 3.0 5.0 mAdc mAdc IEBO hFE mAdc ON CHARACTERISTICS (Note 3) 2N6387, 2N6388 2N6387, 2N6388 1000 100 20,000 2.0 3.0 2.8 4.5 CollectorEmitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) BaseEmitter On Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 2N6387, 2N6388 2N6387, 2N6388 2N6387, 2N6388 VCE(sat) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS SmallSignal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) |hfe| Cob hfe 20 200 pF 1000 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

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2N6387, 2N6388
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA V1
APPROX

VCC + 30 V RC SCOPE

TUT

RB 51 D1 [ 8.0 k [ 120

+ 12 V 0 V2
APPROX

-8V

25 ms

tr, tf v 10 ns DUTY CYCLE = 1.0%

- 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0

Figure 2. Switching Times Test Circuit

7.0 5.0 3.0 ts tf t, TIME (s) 1.0 0.7 0.3 0.2 0.1 0.07 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr

td

0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMPS)

5.0

10

Figure 3. Switching Times

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 0.1

0.1 0.07 0.05 0.03 0.02 0.01 0.01

0.05 0.02 0.01 0.02

SINGLE PULSE 0.05 0.1 0.2 0.5 1.0

P(pk) ZqJC (t) = r(t) RqJC RqJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 2.0 5.0 t, TIME (ms) 10 20 50

t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k

Figure 4. Thermal Response

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2N6387, 2N6388
20 IC, COLLECTOR CURRENT (AMPS) 10 dc 50 ms TJ = 150C 5 ms 10 ms 50 ms 1 ms

5.0

2.0 1.0 0.5 0.2 0.1

BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 100C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6387 2N6388 80

0.03 1.0

40 10 20 2.0 4.0 6.0 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown

Figure 5. Active-Region Safe Operating Area

10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc

300 TJ = 25C 200 C, CAPACITANCE (pF)

Cob 100 70 50 Cib

30 0.1

0.2

0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50

100

Figure 6. SmallSignal Current Gain

Figure 7. Capacitance

20,000 VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 25C 1000 -55C 500 300 200 TJ = 150C

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A

1.8

1.4

0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)

5.0 7.0 10

1.0

0.3

0.5 0.7

1.0

2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA)

10

20 30

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

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2N6387, 2N6388
3.0 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 2.5 + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.1 0.2 0.3 0.5 0.7 1.0 qVB for VBE 25C to 150C -55C to 25C 2.0 3.0 5.0 7.0 10 *qVC for VCE(sat) -55C to 25C *IC/IB hFE@VCE + 4.0V 3

25C to 150C

2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250

1.5

1.0

0.5 0.1

0.2 0.3

0.5 0.7

1.0

2.0 3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

Figure 11. Temperature Coefficients

105 REVERSE IC, COLLECTOR CURRENT (A) 104 103 102 101 100 100C EMITTER VCE = 30 V FORWARD COLLECTOR

TJ = 150C

BASE

[ 8.0 k

[ 120

25C 10-1 -0.6 -0.4 -0.2

+0.2 +0.4

+0.6 +0.8

+1.0 +1.2 + 1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector CutOff Region

Figure 13. Darlington Schematic

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2N6387, 2N6388
PACKAGE DIMENSIONS
TO220 CASE 221A09 ISSUE AG
T B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04

C S

Q
1 2 3

A U K

H Z L V G D N

R J

STYLE 1: PIN 1. 2. 3. 4.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N6387/D