Ordering number : ENN7767

2SK3747

2SK3747
Features

N-Channel Silicon MOSFET

High-Voltage, High-Speed Switching Applications

Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 1500 20 2 4 3.0 50 150 --55 to +150 42 2 Unit V V A A W W C C mJ A

*1 VDD=99V, L=20mH, IAV=2A *2 L20mH, single pulse

Electrical Characteristics at Ta=25C

Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V Ratings min 1500 100 10 2.5 0.7 1.4 10 13 3.5 typ max Unit V

A A
V S

Marking : K3747

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81004QB TS IM TB-00000018 No.7767-1/4

2SK3747
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Miller Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A IS=2A, VGS=0 Ratings min typ 400 85 45 12.5 30 152 45 37.5 2.7 20 0.88 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V

Note) Although the protection diode is contained between gate and source, be careful of handling enough.

Package Dimensions unit : mm 2076B

3.4 16.0 5.6 3.1

5.0 8.0 21.0 22.0

20.4

2.8 2.0 1.0

4.0

2.0 0.6

3.5

5.45

5.45

Switching Time Test Circuit

VIN 10V 0V VIN PW=10s D.C.0.5% ID=1A RL=200 VDD=200V

2.0

1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML

Unclamped Inductive Test Circuit

L 50 DUT

VOUT

10V 0V

50

VDD

2SK3747 P.G RGS=50

No.7767-2/4

2SK3747
4.0 3.5 3.0 2.5

Tc=25C pulse

ID -- VDS
8V

3.0

ID -- VGS
VDS=20V pulse

2.5

Tc= --25C

Drain Current, ID -- A

Drain Current, ID -- A

10V

2.0

6V
2.0 1.5 1.0 0.5

25C 75C

1.5

1.0

5V VGS=4V

0.5

0 0 5 10 15 20 25 30 35 40 45 50

0 0 2 4 6 8 10 12 14 16 18 20

Drain-to-Source Voltage, VDS -- V

30

IT07130 30

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

IT07131

RDS(on) -- Tc

ID=1A

ID=1A VGS=10V

Static Drain-to-Source On-State Resistance, RDS(on) --

25

Static Drain-to-Source On-State Resistance, RDS(on) --

18 20

25

20

20

15

Tc=75C
25C --25C

15

10

10

0 0 2 4 6 8 10 12 14 16

0 --50

--25

25

50

75

100

125

150

Gate-to-Source Voltage, VGS -- V

5

yfs -- ID

IT07132 10 7 5

Case Temperature, Tc -- C

IT07133

IF -- VSD
VGS=0

Forward Transfer Admittance, yfs -- S

VDS=20V
3 2

25
1.0 7 5 3 2

Forward Drain Current, IF -- A

3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.4

5C --2 = C Tc 75

0.1

0.1

1.0

Tc= 7

5C 25C --25C
0.6 0.8

1.0

1.2 IT07135

Drain Current, ID -- A
5 3

IT07134 5

SW Time -- ID

Ciss, Coss, Crss -- VDS

f=1MHz

Diode Forward Voltage, VSD -- V

VDD=200V VGS=10V
td (off)

3 2 1000 7 5 3 2 100 7 5 3

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

100 7 5 3 2

Ciss

tf

Coss
Crss

tr
10 0.1 2 3 5 7 1.0

td(on)
2 3

2 10 0 5 10 15 20 25 30 35 40 45 50

Drain Current, ID -- A

IT07136

Drain-to-Source Voltage, VDS -- V

IT07137

No.7767-3/4

2SK3747
10 9

VGS -- Qg
VDS=200V ID=2A

7 5 3 2

ASO
IDP=4A

Gate-to-Source Voltage, VGS -- V

ID=2A
1m

Drain Current, ID -- A

7 6 5 4 3 2 1 0 0 10 20 30 40 IT07138

1.0 7 5 3 2 0.1 7 5 3 2

<10s 10 s 10 0 s

10

op

10
er

0m
io

at

Operation in this area is limited by RDS(on).

0.01 1.0

Tc=25C Single pulse

2 3 5 7 10 2 3 5 7 100 2 3

Total Gate Charge, Qg -- nC

3.5

PD -- Ta
Allowable Power Dissipation, PD -- W

Drain-to-Source Voltage, VDS -- V

60

5 71000 2 3 IT07139

PD -- Tc

Allowable Power Dissipation, PD -- W

3.0

50

2.5

40

2.0

30

1.5

20

1.0

0.5 0 0 20 40 60 80 100 120 140 160

10

0 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- C

IT07140

Case Temperature, Tc -- C

IT07141

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customers products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2004. Specifications and information herein are subject to change without notice.
PS No.7767-4/4