EE 630 (Photonic Integrated Circuits) Home Assignment #1 Due Date for Solution Submission: 04th February, 2014

1.An experiment involving a homogeneously broadened optical amplifier is depicted in the

diagram below. For an input intensity of 1 W/cm2, the gain (output/input) is 10dB. If the input intensity is doubled to 2 W/cm2, the gain is reduced to 9dB.

a. What is the small-signal gain (i.e., Iin 0) of this amplifier (in dB)? b. What is the saturation intensity? c. What is the maximum power (per unit area) that can be extracted from this amplifier (in limit of large input intensity)? d. What must be the input intensity to extract 50% of this maximum?

2.The purpose of this problem is to predict the saturated gain (or transmission) through an

amplifier with a small-signal gain coefficient 0 that saturates according to the homogeneous law and a loss coefficient that is not affected by the radian. Hence the intensity changes with z according to

where ratio

and

length of amplifier. (i.e.,6dB) and values of the (in dB) as a function of the input Plot the saturated gain

a. Assume a small signal gain

intensity (i.e., ). Use a semilog graph paper and plot on the linear scale -2 3 and on the log scale covering the range from 10 to 10 . b. If the input intensity is much larger than the saturation intensity, find an analytic expression for the output in terms of the input.

3.The model of question 1 assumed an atomic system with equal degeneracies g1=g2. Use the
same logic path as used there to find an expression for the small signal gain coefficient for the saturation intensity for the case where g1g2. and

4. Consider a long pn junction diode with an acceptor doping, Na, of 1018 cm-3 on the p-side and

donor concentration of Nd on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2.The minority carrier recombination time, , depends on the dopant concentration, Ndopant (cm-3), through the following approximate relation

a. Suppose that Nd = 1015 cm-3, then the depletion layer extends essentially into the n-side and we have to consider minority carrier recombination time, , in this region. Calculate the diffusion and recombination contributions to the total diode current given that when Na = 1018 cm-3, , and when Nd = 1015 cm-3 , . What is your conclusion? . Calculate b. Suppose that Nd = Na, Then W extends equally to both sides and, further, the diffusion and recombination contributions to the diode current given that when Na = 1018 cm-3, , and when Nd = 1018 cm-3 , . What is your conclusion

5. Figure below represents the bandgap Eg and the lattice parameter a in the quaternary III-V

alloy system. A line joining two points represents the changes in Eg and a with composition in a ternary alloy composed of the compounds at the ends of that line. For example, starting at GaAs point, Eg = 1.42 eV and a = 0.565 nm, and Eg decreases and a increases as GaAs is alloyed with InAs and we move along the line joining GaAs to InAs. Eventually, at InAs, Eg = 0.35 eV and a =0.606 nm. Point X in figure is composed of InAs and GaAs and it is the ternary alloy InxGa1-xAs. It has Eg = 0.7 eV and a =0.587 nm, which is the same a as that for InP. InxGa1-xAs at X is therefore lattice matched to InP and hence can be grown on an InP substrate without creating defects at the interface. Further, InxGa1-xAs at X can be alloyed with InP to obtain a quaternary alloy, InxGa1xAsyP1-y, whose properties lie on the line joining X and InP and therefore all have the same lattice parameter as InP but different bandgap. Layers of InxGa1-xAsyP1-y with composition between X and InP can be grown epitaxially on an InP substrate by various techniques such as liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). The hatched area between the solid lines represents the possible values of Eg and a for quaternary III-V alloy system in which the bandgap is direct and hence suitable for direct electron and hole recombination. The compositions of the quaternary alloy lattice matched to InP follow the line from X to InP. a. Given that the InxGa1-xAs at X is In0.535Ga0.465As, show that quaternary alloys InxGa1xAsyP1-y are lattice matched to InP when y = 2.15 x. b. The bandgap energy Eg, in eV for InxGa1-xAsyP1-y lattice matched to InP is given by the empirical relation Eg (eV) = 1.35 - 0.72 y + 0.12 y2 Find the composition of the quaternary alloy suitable for an emitter operating at 1.55m.

6. Experiments carried out on various direct bandgap semiconductor LEDs give the output

spectral linewidth (between half intensity points as in figure below) listed in Table 1. As we know that the spread in the wavelength is related to a spread in the photon energy,

Suppose that we write constant. Show that,

and

in which m is a numerical

and by approximately plotting the data in Table1 and assuming T=300K, find m. Table 1. Linewidth of various LEDs. 650 Peak wavelength of emission( ) nm nm Material (Direct Eg) 22 between half points in the output spectrum (Intensity vs. wavelength) 810 820 890 950 1150 1270 1500

36

40

50

55

90

110

150

AlGaAs AlGaAs AlGaAs GaAs GaAs InGaAsP InGaAsP InGaAsP

Table 2 shows the linewidth

for various visible LEDs. Radiative recombination is obtained

by approximately doping the material. Using m3, T=300K, in Eq. (2), calculate the expected spectral width for each and compare with the experimental value. What is your conclusion? Do you think EN in below figure is a discrete level?

The output spectrum from AlGaAs LED. Values normalized to peak emission at 25oC Table 2. Linewidth between half points in the output spectrum (Intensity vs. wavelength) of 583 36 Yellow GaAsP(N) 600 40 635 40

various visible LEDs using SiC and GaAsP materials. Peak wavelength of 468 565 emission( ) nm 66 28 nm color Material (Direct Eg) Blue SiC (Al) Green GaP(N)

Orange Red GaAsP(N) GaAsP