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+ =
+ =
Excess electrons and excess holes
When external excitation is applied, an electron-hole pair is generated.
The additional electrons and holes are called excess electrons and
excess holes.
Generation rate of excess carriers
For direct band-to-band generation, the excess electrons and holes
are created in pairs
2
i o o
n p n np =
W.K. Chen Electrophysics, NCTU 7
W.K. Chen Electrophysics, NCTU 8
Excess carriers recombination rate
In the direct band-to-band recombination, the excess electrons and holes
recombine in pairs, so the recombination rate must be equal
bandgap) (direct
' '
p n
R R =
Using the concept of collision model, we assume the rate of pair
recombination obeys
) ( '
carriers excess of rate ion Recombinat
m equilibriu at holes and electrons of rate ion Recombinat
rium nonequilib under holes and electrons of rate ion Recombinat
2
2
i r o
i r o o r o
r
n np R R R
n p n R
np R
= =
= =
=
1
=
Low-level injection
Low-level injection
) ) ( ( )] ( ) ( [
) (
) ( material type - p assume
2
o i r
o o
p t n t p t n n
dt
t dn
n p
<< =
>>
Q
injection) level - (low ) (
) (
t n p
dt
t n d
o r
=
The solution to this equation is an exponential decay from initial excess
carrier concentration
Excess minority lifetime
W.K. Chen Electrophysics, NCTU 11
The recombination rate of excess carriers
injection) level - (low
) (
) (
) (
'
no
o r
t n
t n p
dt
t n d
R
= + = =
no
p n
t n
R R R
) (
'
' '
= = =
po
p n
t p
R R R
) (
'
' '
= = =
( p-type, low level injection)
( p-type, low level injection)
n-type material, n
o
>>p
o
W.K. Chen Electrophysics, NCTU 12
6.2.1 Continuity equation
dx
x
x F
x F dx x F
px
px px
+ = +
+
+ +
) (
) ( ) (
dxdydz
p
dxdydz g dydz dx x F x F dxdydz
t
p
pn
p px px
+ + =
+ +
)] ( ) ( [
The net increase in the number of holes in the differential volume per unit time
From the calculus, the Taylor expansion gives
g R
Hole flux generation recombination
Flux in Flux out
dxdydz
p
dxdydz g dxdydz
x
x F
dxdydz
t
p
pn
p
px
+
) (
dA
W.K. Chen Electrophysics, NCTU 13
s) - (holes/cm
) (
2
pt
p
px
p
g
x
x F
t
p
+
s) - /cm (electrons
) (
2
nt
n
n
p
g
x
x F
t
n
+
Continuity equation for holes
Continuity equation for electrons
:
pt
p
+ =
= E , E
x
n
D n F
e
J
x
p
D p F
e
J
n n n
n
p p p
p
= =
= =
+
+
E
) (
, E
) (
pt
p
px
p
g
x
x F
t
p
+
) (
nt
n
n
p
g
x
x F
t
n
+
) (
dx
x
x F
x F dx x F
px
px px
+ = +
+
+ +
) (
) ( ) (
The current density in material is
By dividing current density the charge of each individual particle, we obtain
particle flux
W.K. Chen Electrophysics, NCTU 15
nt
n n n
pt
p p p
n
g
x
n
D
x
n
t
n
p
g
x
p
D
x
p
t
p
+ =
2
2
2
2
E) (
E) (
Thus the continuity equations can be rewritten as
x
n
x
n
x
n
x
p
x
p
x
p
E
E
E) (
and
E
E
E) (
Q
t
n n
g
x
n
x
n
x
n
D
t
p p
g
x
p
x
p
x
p
D
nt
n n n
pt
p p p
= +
= +
E
E
E
E
2
2
2
2
W.K. Chen Electrophysics, NCTU 16
t
n n
g
x
n
x
n
x
n
D
t
p p
g
x
p
x
p
x
p
D
nt
n n n
pt
p p p
= +
= +
) ( E ) (
E
) (
) ( E ) (
E
) (
2
2
2
2
+ =
+ =
Homogeneous
semiconductor
W.K. Chen Electrophysics, NCTU 17
6.3 Ambipolar transport
app int
E E <<
Ambipolar transport
When excess carriers are generated, under external applied field the excess
holes and electrons will tend to drift in opposite directions
However, because the electrons and holes are charged particles, any separation
will induce an internal field between two sets of particles, creating a force
attracting the electrons and holes back toward each other
Only a relatively small internal electric field is sufficient to keep the excess
electrons and holes drifting and diffusing together
The excess electrons and holes do not move independently of each other, but
they diffuse and drift together, with the same effective diffusion coefficient and
with the same effective mobility. This phenomenon is called ambipolar transport.
app int app
E E E E =
0
E ) (
E
int
int
=
t
n p e
s
W.K. Chen Electrophysics, NCTU 18
t
n
R g
x
n
x
n
x
n
D
t
n
R g
x
p
x
n
x
n
D
n n
p p
= +
= +
) ( E ) (
E
) (
) ( E ) (
E
) (
2
2
2
2
=
= = = =
=
p n
R
p
R
n
R
g g g
pt
p
nt
n
p n
For ambipolar transport, the excess electrons and excess holes generate
and recombine together
pt nt
t
n n
g
x
n
x
n
x
n
D
t
p p
g
x
p
x
p
x
p
D
nt
n n n
pt
p p p
= +
= +
) ( E ) (
E
) (
) ( E ) (
E
) (
2
2
2
2
p p p
n n n
o
o
+ =
+ =
W.K. Chen Electrophysics, NCTU 19
t
n
p n
R g p n
x
n
n p
x
n
pD nD
p n
p n n p n p p n
+ =
+ +
+
) (
) (
) )( (
) (
E ) )( (
) (
) (
2
2
t
n
R g
x
n
x
n
D
= +
) (
) (
) (
E '
) (
'
2
2
) (
'
p n
pD nD
D
p n
n p p n
+
+
=
) (
) )( (
'
p n
n p
p n
n p
+
=
= =
kT
e
D D
p
p
n
n
Q
p D n D
p n D D
D
p n
p n
+
+
=
) (
'
(ambipolar diffusion coefficient)
(ambipolar mobilty)
ambipolar transport
equation
W.K. Chen Electrophysics, NCTU 20
t
n n
g
x
n
x
n
x
n
D
nt
n n n
= +
) ( E ) (
E
) (
2
2
t
n
R g
x
n
x
n
D
= +
) (
) (
) (
E '
) (
'
2
2
ambipolar transport
equation
continuity equation
for electrons
t
p p
g
x
p
x
p
x
p
D
pt
p p p
= +
) ( E ) (
E
) (
2
2
continuity equation
for holes
W.K. Chen Electrophysics, NCTU 21
6.3.2 Ambipolar transport under low injection
p
o n
o p n
o p o n
o o p n
D
n D
n D D
p p D n n D
p p n n D D
D =
+ + +
+ + +
=
) ( ) (
)] ( ) [(
'
injection) (low
type n For
o
o
n p n
p n
o
<< =
>>
t
p
R g
x
p
x
p
D
= +
) (
) (
) (
E '
) (
'
2
2
) (
) )( (
'
p n
n p
p n
n p
+
=
p D n D
p n D D
D
p n
p n
+
+
=
) (
'
p
n
n p
p n
n p
n
n
p n
n p
+
=
) (
) )( (
] [
) )[ (
'
Ambipolar transport
W.K. Chen Electrophysics, NCTU 22
) ( ) (
' '
p po p po p p
R R g G R g R g + + = =
po po
R G = Q
p
p p p
p
g R g R g
= =
' ' '
excess hole
generation rate
Thermal-equilibrium
hole generation rate
Thermal-equilibrium hole
recombination rate
excess hole
recombination rate
For n-type,
Under low injection, the concentration of majority carriers electrons will be
essentially constant. Then the probability per unit time of a minority carrier
hole encountering a majority carrier electron will remain almost a constant
p pt
= Q
(minority carrier hole lifetime)
So the net generation rate,
W.K. Chen Electrophysics, NCTU 23
t
p p
g
x
p
x
p
D
po
p p
= +
) (
'
) (
E
) (
2
2
= +
) (
) (
) (
E '
) (
'
2
2
p
D D = '
p
= '
p
p p p
p
g R g R g
= =
' ' '
For ambipolar transport , the transport and recombination parameters are
governed by minority carriers
The excess majority carriers diffuse and drift with the excess minority
carriers; thus the behavior of the excess majority carriers is determined by
the minority carrier parameters
W.K. Chen Electrophysics, NCTU 24
injection) (low
type p For
o
o
p n p
n p
o
<< =
>>
For p-type semiconductor
t
n
R g
x
n
x
n
D
= +
) (
) (
) (
E '
) (
'
2
2
) (
) )( (
'
p n
n p
p n
n p
+
=
p D n D
p n D D
D
p n
p n
+
+
=
) (
'
p-type, homogeneous
ambipolar transport
n
o p
o p n
o p o n
o o p n
D
p D
p D D
p p D n n D
p p n n D D
D =
+ + +
+ + +
=
) ( ) (
)] ( ) [(
'
n
p
n p
p n
n p
p
p
p n
n p
=
+
=
) (
) )( (
] [
) )[ (
'
W.K. Chen Electrophysics, NCTU 25
) ( ) (
' '
n no n no n n
R R g G R g R g + + = =
no no
R G = Q
n
n n n
n
g R g R g
= =
' ' '
excess electron
generation rate
Thermal-equilibrium
electron generation rate
Thermal-equilibrium hole
recombination rate
excess hole
recombination rate
For p-type,
Under low injection, the concentration of majority carriers holes will be
essentially constant. Then the probability per unit time of a minority carrier
electron encountering a majority carrier hole will remain almost a constant
n nt
= Q
(minority carrier electron lifetime)
So the net generation rate,
W.K. Chen Electrophysics, NCTU 26
n
n
D D
=
=
'
'
t
n
R g
x
n
x
n
D
= +
) (
) (
) (
E '
) (
'
2
2
t
n n
g
x
n
x
n
D
no
n n
= +
) ( ) (
E
) (
'
2
2
= =
' ' '
For ambipolar transport , the transport and recombination parameters are
governed by minority carriers
The excess majority carriers diffuse and drift with the excess minority
carriers; thus the behavior of the excess majority carriers is determined by
the minority carrier parameters
W.K. Chen Electrophysics, NCTU 27
6.3.3 Applications of the ambipolar transport
equation
W.K. Chen Electrophysics, NCTU 28
Example 6.1
time of function a as ion concentrat carrier excess the Calculate
0 for 0 g'
carriers excess of ion concentrat uniform 0, At
condition injection - low under
field electrical applied zero
tor semiconduc type - n Homogenous
> =
=
t
t
Solution:
t
p p
x
p
D
po
p
) ( ) (
2
2
Uniform excess carriers
t
p p
g
x
p
x
p
D
po
p p
= +
) (
'
) (
E
) (
2
2
E=0 g=0
W.K. Chen Electrophysics, NCTU 29
po
p
t
p
) (
po
t
e p t p
/
) 0 ( ) (
=
po
t
e n t n
/
) 0 ( ) (
=
From the charge neutrality condition, the excess majority electron
concentration is given by
W.K. Chen Electrophysics, NCTU 30
Example 6.2
time of function a as ion concentrat carrier excess the Calculate
carriers excess of generation uniform 0, At
condition injection - low under
field electrical applied zero
tor semiconduc type - n Homogenous
> t
t
p p
g
x
p
x
p
D
po
p p
= +
) (
'
) (
E
) (
2
2
Solution:
0 '
) (
) (
' = +
= g
p
t
p
t
p p
g
po po
Uniform generation
) 1 ( ' ) (
/
po
t
po
e g t p
=
' ) ( , 0
) (
state, steady At
g t p
t
t p
po
= = =
+
=
Solution:
t
n n
g
x
n
x
n
D
no
n n
= +
) ( ) (
E
) (
'
2
2
=
=
+ =
+
0 ) 0 ( ) (
0 ) 0 ( ) (
) (
/
/
/ /
x e n x n
x e n x n
Be Ae x n
Ln x
Ln x
Ln x Ln x
0
) (
0 At
0
) (
0, At
2
2
'
2
2
=
= +
=
no
n
no
n
n
x
n
D x
n
g
x
n
D x
0
) (
2
2
=
no n
D
n
x
n
no n n
D L =
2
Minority carrier diffusion length
The general solution
p-type
log scale
W.K. Chen Electrophysics, NCTU 33
Example 6.4
t x
t g'
x
t
x i
and of function a as ion concentrat carrier excess the Calculate
0 for 0
0 and
0 at ously instantane generated is pairs hole - electron of numbers finite
direction - n the E field electrical applied constant
tor semiconduc type - n Homogenous
o
> =
=
=
Solution:
t
p p
g
x
p
x
p
D
po
p p
= +
) (
'
) (
E
) (
2
2
) ( ) (
E
) (
o
2
2
po
t
e t x p t x p
/
) , ( ' ) , (
=
t
t x p
x
t x p
x
t x p
D
p p
) , ( ' ) , ( '
E
) , ( '
o
2
2
=
t D
t x
t D
t x p
p
p
p
4
) E (
exp
4
1
) , ( '
2
o
= =
t D
t x
t D
e
e t x p t x p
p
p
p
t
t
po
po
4
) E (
exp
4
) , ( ' ) , (
2
o
/
/
= E
t
J
=
E = J
Poissons equation
Continuity equation
(neglecting the effects of
generation and recombination)
t t
J
= =
E) (
0 = +
t
d
t
e t
/
) 0 ( ) (
=
=
d
Dielectric relaxation time constant
p e ) (+ =
( the time constant is related
to dielectric constant)
W.K. Chen Electrophysics, NCTU 38
Example 6.5 Dielectric relaxation time constant
constant time relaxation dielectric the Calculate
cm 10
tor semiconduc type - n Homogenous
3 16
=
d
N
Solution:
ps 0.539
) 10 )( 1200 )( 10 6 . 1 (
) 10 85 . 8 )( 7 . 11 (
16 19
14
=
= = =
d n
o r
d
N e
= =
t D
t x
t D
e
e t x p t x p
p
p
p
t
t
po
po
4
) E (
exp
4
) , ( ' ) , (
2
o
/
/
= =
t D
t x
t D
e
e t x p t x p
p
p
p
t
t
po
po
4
) E (
exp
4
) , ( ' ) , (
2
o
/
/
2 1
2
o
or , 4 ) E ( t t t t D t x
p p
= =
1 2
2 2
o
,
16
) ( ) E (
t t t
t
t
D
o
p
p
=
=
From the broadened pulse width, we can obtain diffusion coefficient
diffusion coefficient
W.K. Chen Electrophysics, NCTU 43
=
po o p po
o p
po
o
d
K
d
K
t
K S
E
exp
) E /(
exp ) exp(
= =
t D
t x
t D
e
e t x p t x p
p
p
p
t
t
po
po
4
) E (
exp
4
) , ( ' ) , (
2
o
/
/
The area S undrer the curve is proportional to the number of excess holes
that have not recombined with majority carrier electrons
By varying the electric field, the area under the curve will change
A plot of ln(S) as a function of (d/
p
E
o
) will yield a straight line whose slope
is (1/
po
)
W.K. Chen Electrophysics, NCTU 44
+ =
o p po
d
K S
E
1
) ln( ) ln(
) ln(S
o p
E
d
y =
po
1
We can determine the minority carrier lifetime
W.K. Chen Electrophysics, NCTU 45
6.4 Quasi-Fermi energy levels
At thermal equilibrium,
the electron and hole concentrations are functions of the Fermi-level.
The Fermi level remains constant throughout the entire material
The carrier concentrations is exponentially determined by the Fermi-level
2
exp exp
i o o
f f
i o
fi f
i o
n p n
kT
E E
n p
kT
E E
n n
i
=
=
W.K. Chen Electrophysics, NCTU 46
At non-thermal equilibrium
If excess carriers are created, thermal equilibrium no longer exists and Fermi
energy is strictly no longer defined
We may define quasi-Fermi levels for electrons and holes to relate the
concentrations for non-equilibrium semiconductor in the same form of equation
as that in thermal equilibrium
In such a way, the quasi-Fermi levels for electrons and holes specified for non-
thermal equilibrium conditions do not hold constants over the entire material
2
exp
exp
i
fp f
i o o
fi fn
i o
n np
kT
E E
n p p p
kT
E E
n n n n
i
= + =
= + =
= =
= = =
=
o i o
p n n
Solution:
eV 2982 . 0 ) ln( exp = =
=
i
o
fi f
fi f
i o
n
n
kT E E
kT
E E
n n
eV 179 . 0 ) ln( exp
eV 2984 . 0 ) ln( exp
=
+
=
= + =
=
+
=
= + =
i
o
fp fi
fp f
i o o
i
o
fi fn
fi fn
i o
n
p p
kT E E
kT
E E
n p p p
n
n n
kT E E
kT
E E
n n n n
i
+
=
kT
E E
E f
f t
t F
exp 1
1
) (
Process 2: electron emission
)] ( [
t F t n en
E f N E R =
(at thermal equilibrium)
en cn
R R =
)] ( [ ))] ( 1 ( [
t Fo t n t Fo t n
E f N E n E f N C =
Is there relationship between capture constant and emission constant?
W.K. Chen Electrophysics, NCTU 53
n
t c
c n
n
fo c
c
fo t
n
n
t Fo
n n
t Fo
t Fo
n
C
kT
E E
N E
E
kT
E E
N
kT
E E
C
E n
E f
C E
E f
n E f
C
=
=
+
= =
exp
exp ) 1 exp 1 (
) 1
) (
1
(
) (
)) ( 1 (
n n
C n E ' =
=
kT
E E
n
kT
E E
N n
i t
i
t c
c
exp exp '
The relation between emission constant and capture constant is valid at all
conditions including when Fermi level is right located at trap energy, in
which the trap is the dominant process to provide the free electrons in the
conduction band
The electron emission rate is increased exponentially as the trap energy
level closes to the conduction band
W.K. Chen Electrophysics, NCTU 54
p E f N C R
t F t p cp
= )) ( (
+
=
kT
E E
E f
f t
t F
exp 1
1
) (
))] ( 1 ( [
t F t p ep
E f N E R =
Process 3: hole capture rate
Process 4: hole emission rate
ep cp
R R =
+ =
=
=
kT
E E
N C E
kT
E E
E
kT
E E
E
kT
E E
N C
E f
E p C
E f N E p E f N C
t
p p
f t
p
f t
p
f
p
t F
p p
t F t p t F t p
exp
exp ) 1 exp 1 ( exp
) 1
) (
1
(
))] ( 1 ( [ )) ( (
(at thermal equilibrium)
' p C E
p p
=
=
kT
E E
n
kT
E E
N p
t i
i
t
exp exp '
=
kT
E E
N n
t c
c
exp '
=
kT
E E
N p
t
exp '
W.K. Chen Electrophysics, NCTU 56
n E f N C R
t F t n cn
= ))] ( 1 ( [
)] ( [
t F t n en
E f N E R =
p E f N C R
t F t p cp
= )) ( (
))] ( 1 ( [
t F t p ep
E f N E R =
W.K. Chen Electrophysics, NCTU 57
Under non-equilibrium condition
)] ( ' )) ( 1 ( [
)] ( [ ))] ( 1 ( [
t F t F t n n
t F t n t F t n n
en cn n
E f n E f n N C R
E f N E n E f N C R
R R R
=
=
=
Net electron capture rate at acceptor trap
)] ( ' )) ( 1 ( [
t F t F t n n
E f n E f n N C R =
))] ( 1 ( ' )) ( [
t F t F t p p
E f p E pf N C R =
=
kT
E E
N n
t c
c
exp '
=
kT
E E
N p
t
exp '
) ' ( ) ' (
'
) (
p p C n n C
p C n C
E f
p n
p n
t F
+ + +
+
=
Net hole capture rate at acceptor trap (Process 3 & 4)
At steady state,
p n
R R =
W.K. Chen Electrophysics, NCTU 58
We may note that
=
kT
E E
N N
kT
E E
N
kT
E E
N p n
c
c
t t c
c
n
R
p
R
W.K. Chen Electrophysics, NCTU 59
SRH under low injection
trap) (deep ' , '
injection) (low
type) - (n
p n n n
p n
p n
o o
o
o o
>> >>
>>
>>
=
+ + +
= =
) ' ( ) ' (
) (
2
p N C
n
R
t p
= =
For n-type semiconductor with deep trap energy at low injection, the net
recombination rate is limited by the hole capture process during SRH
recombination
) 3 ( kT E E
t f
>
W.K. Chen Electrophysics, NCTU 60
For n-type semiconductor with deep trap energy at low injection, the net
recombination rate is limited by the hole capture process during SRH
recombination
The recombination is related to the mean minority carrier lifetime
n
R
p
R
f
E
t
E
po
t p
p
p N C
n
R
= = =
t p
po
N C
1
=
If the trap concentration increases, the probability of excess carrier
recombination increases; thus the excess minority carrier lifetime decreases
n-type
low injection
W.K. Chen Electrophysics, NCTU 61
Case 2: p-type semiconductor with deep trap energy at low injection
trap) (deep ' , '
injection) (low
type) - (p
n p p p
n p
n p
o o
o
o o
>> >>
>>
>>
t n
no
N C
1
=
n
R
p
R
f
E
t
E
+
no
t n
n
n N C
p
R
= = =
p-type
low injection
W.K. Chen Electrophysics, NCTU 62
) ' ( ) ' (
) (
2
p p C n n C
n np N C C
n
R
p n
i t p n
+ + +
= =
) ' ( ) ' (
) (
2
p p n n
n np n
R
no po
i
+ + +
= =
) )( 2 (
) ( 2
) ( ) (
) ) ( ) (
2 2
no po i
i
i i no i i po
i i i
n n
n n n
n n n n n n
n n n n n
R
+ +
+
=
+ + + + +
+ +
=
injection low under
' '
level energy intrinsic to equal energy a at located is trap deep Assume
, ,
i
o o i o o
n p n
p p p n n n n p n
= =
+ = + = = =
n n
R
no po
=
+
=
) (
Under low injection
i
n n <<
The excess-carrier lifetime increases as we change from an extrinsic to an
intrinsic semiconductor
no po
+ =
W.K. Chen Electrophysics, NCTU 64
6.6 Surface effects
Surface states
At the surface, the semiconductor is abruptly terminated. This disruption of
periodic potential function results in allowed electronic energy states within the
energy bandgap, which is called surface states
Since the density of traps at the surface is larger than the bulk, the excess
minority carrier lifetime at the surface will be smaller than the corresponding
lifetime in the bulk material
For n-type material
bulk) (in the
po
B
po
B
p p
R
= =
surface) (at the
pos
s
s
p
R
=
po pos
<<
W.K. Chen Electrophysics, NCTU 65
Assume excess carriers are uniformly generated throughout the entire
semiconductor material
At steady state, the generation rate is equal to recombination rate at a
given position either in the bulk or at the surface
surface) (at the
bulk) (in the
pos
s
s
po
B
B
p
R G
p
R G
= =
= =
B s po pos
p p < <
pumping) (uniform
s B
R R G = =
For the case of uniform pumping
W.K. Chen Electrophysics, NCTU 66
Example 6.8 Surface recombination
Solution:
on distributi ion concentrat carrier - excess state Steady
pumping uniform and 0 E Assume
/s cm 10 s 10 , s 10 , cm 10 tor semiconduc type - n
2 7
0
6 -3 14
=
= = = =
p s p po pB
D
1 - 13
6
7
14
cm 10
) 10 (
) 10 (
) 10 ( ) (
) 0 ( surface at ion concentrat carrier - Excess
= = = = =
=
po
pos
B s
pos
s
po
B
p p
p p
G
x
Q
pumping) (uniform 0 '
) (
0) E (at equation ansport Carrier tr
2
2
= +
=
po
p
p
g
dt
p d
D
1 - 3 - 20
6
14
s - cm 10
10
10
' where = = =
po
B
p
g
B B p p
g p p
s
po B
) 0.9 - (1 10 ) (
/
14 p
L x
s
e p x p
= =
m 31.6 cm 316 00 . 0 ) (10)(10 where
-6
= = = =
po p p
D L
W.K. Chen Electrophysics, NCTU 68
6.6.2 Surface recombination velocity
A gradient in the excess-carrier concentration existing near the surface leads
to a diffusion of excess carriers from the bulk region toward the surface
where they recombine.
) ) 0 ( ( ) 0 (
) (
Flux
o
surface
p
p p s p s
dx
p d
D = =
)
'
1 ( ' ) (
/
p
L x
p p
po p
po
e
sL D
L sg
g x p
+
=
s L D
sg
B
L
B
dx
p d
dx
p d
B g p
p p
po
p x surface
po
+
=
= =
+ =
=
) / (
'
) ( ) (
' ) 0 (
0
Q
Uniform pumping
E=0
Steady state
Uniform pumping
E=0
Steady state
W.K. Chen Electrophysics, NCTU 70
x
) (x p
0 = s
Surface recombination velocity is sensitive to the surface conditions
For sand-blasted surfaces, the typical values of s may be as high as 10
5
cm/s
For clean etched surfaces, this value may be as low as 10 to 100 cm/s states
pumping) (uniform cm/s 1
) 0 (
'
=
p
g
L
D
s
po
p
p
0 if ' ) ( = = s g x p
po
W.K. Chen Electrophysics, NCTU 71
Example 6.10 Surface recombination velocity
Solution:
ty ion veloci recombinat surface the Determine
m 10 (0) and m 6 . 1 3 /s, cm 10 , cm 10
s 10 , s 10 , cm 10 tor semiconduc type - n
oumping) (uniform 6.8 Example in case For the
3 - 13 2 3 14
7
0
6 3 - 14
= = = =
= = =
c p L D g'
p p po
s p po pB
cm/s 1
) 0 (
'
=
p
g
L
D
s
po
p
p
cm/s 10 85 . 2 1
10
10
10 6 . 31
10
4
13
14
4
=
=
s
pumping uniform
W.K. Chen Electrophysics, NCTU 72
Short briefs for surface recombination
bulk) (in the
po
B
po
B
p p
R
= =
surface) (at the
pos
s
s
p
R
=
) ) 0 ( ( ) 0 (
) (
Flux
o
surface
p
p p s p s
dx
p d
D = =