Ordering number : EN2063C

2 SB1143/2SD 1683
Bipolar Transistor
()50V, ()4A, Low VCE(sat), (PNP)NPN Single TO-126ML
http://onsemi.com

Applications

Voltage regulators, relay drivers, lamp drivers, electrical equipment

Features
Adoption of FBET, MBIT processes Large current capacity and wide ASO

Low saturation voltage

Specifi cations ( ): 2SB 1143

Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions Ratings (--)60 (--)50 (--)6 (--)4 (--)6 1.5 10 150 --55 to +150 Unit V V V A A W W C C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions
unit : mm (typ) Package

Product & Package Information

: TO-126ML

2 SB1143 / 2SD 1683

September, 2013 90512 TKIM/O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063-1/ 7

Electrical Characteristics at Ta=25C

Ratings Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO hFE1 DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf See specifi ed Test Circuit. Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)3A VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA IC=(--)10 A, IE=0A IC=(--)1mA, RBE= IE=(--)10 A, IC=0A (-)60 (-)50 (-)6 (70)70 (450)650 (30)35 100* 40 150 (39)25 (-350)190 (-)0.94 (-700)500 (-)1.2 MHz pF mV V V V V ns ns ns min typ max (-)1 (-)1 560* Unit A A

* : The 2SB1143/2SD1683 are classifi ed by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400

U 280 to 560

Switching Time Test Circuit

PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=25V RB

RL 25

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IC=10IB1= --10IB2=1 A (For PNP, the polarity is reversed.)

Ordering Information
Device 2SB1143S 2SB1143T 2SD1683S 2SD1683T Package TO-126ML TO-126ML TO-126ML TO-126ML Shipping 200 pcs./bag 200 pcs./bag 200 pcs./bag 200 pcs./bag Pb Free memo

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Bag Packing Specifi cation

2 SB1143S, 2SB1143T, 2SD1683S, 2SD1683T

Outline Drawing

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PS No.2063-7/7