AOD404 N-Channel Enhancement Mode Field Effect Transistor

General Description
The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. -RoHS Compliant -Halogen Free*

Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7m (VGS = 10V) RDS(ON) < 8m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested

Top View D

TO-252 D-PAK

Bottom View

G S G S G S

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain B,G Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation Power Dissipation
B C

Maximum 30 12 85 65 200 30 120 100 50 2.5 1.6 -55 to 175

Units V V A A mJ W W C

VGS TC=25C
G

TC=100C B

ID IDM IAR EAR PD PDSM TJ, TSTG

TC=100C TA=25C TA=70C

Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Case
C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 14.2 39 0.8

Max 20 50 1.5

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

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AOD404

Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 85 5.4 8.4 6.6 90 0.74 1 85 2100 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 536 165 0.95 19.7 VGS=4.5V, VDS=15V, ID=20A 3.6 7.9 5.9 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 11 36.2 12 35 33 10 17 55 18 42 50 231 1.2 24 2520 7 10.5 8 1.6 Min 30 1 5 100 2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 8: Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

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AOD404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 50 3V 40 ID (A) 30 20 10 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 VGS=2.5V 40 ID(A) 30 25C 20 10 0 1 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1.5 3.5 125C 10V 3.5V 50 VDS=5V 60

7.5 7 VGS=4.5V RDS(ON) (m ) 6.5 6 5.5 5 4.5 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 VGS=10V

1.8 Normalized On-Resistance ID=20A VGS=10V

1.6

1.4 VGS=4.5V

1.2

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01

125C

16 RDS(ON) (m )

ID=20A

1.0E+00 IS (A) 1.0E-01 25C 1.0E-02 1.0E-03 25C 1.0E-04

12 125C

4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-05 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2

Alpha & Omega Semiconductor, Ltd.

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AOD404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 4 VGS (Volts) 3 2 1 500 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss VDS=15V ID=20A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss

Ciss

1000 RDS(ON) limited 1ms 10ms 0.1s 1s 1 TJ(Max)=150C TA=25C 10s DC

100 10s 100s Power (W) 60 40 20 0 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 80 TJ(Max)=150C TA=25C

100 ID (Amps)

10

0.1

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

10 Z JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 PD 0.01 Single Pulse Ton

0.001 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOD404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 0.01 100 80 60 120 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)

tA =
40 20 0 0.00001

L ID BV VDD

Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability

100

80 Current rating ID(A)

60

40

20

0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)

Alpha & Omega Semiconductor, Ltd.

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AOD404

G ate C harge Test Circuit & W aveform

Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
td(on) ton tr td(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR= 1/2 LIAR
2

BV

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Q rr = - Idt

Vds -

Isd Vgs

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd

Alpha & Omega Semiconductor, Ltd.

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