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FDS6875
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
These P-Channel 2.5V specified MOSFETs are -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V,
produced using Fairchild Semiconductor's advanced RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
PowerTrench process that has been especially tailored to
Low gate charge (23nC typical).
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance. High performance trench technology for extremely low
These devices are well suited for portable electronics RDS(ON).
applications: load switching and power management,
battery charging and protection circuits. High power and current handling capability.
D2
D2 5 4
D1 S
D1 FD 75 6 3
68
7 2
G2
S2
G1 8 1
SO-8 pin 1
S1
∆BVDSS/∆TJ
o
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C -21 mV/oC
IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA
TJ = 55°C -10 µA
IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V
∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 2.8 mV/oC
RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -6 A 0.024 0.03 Ω
TJ =125°C 0.033 0.048
VGS = -2.5 V, ID = -5.3 A 0.032 0.04
ID(ON) On-State Drain Current VGS = -4.5 V, VDS = -5 V -20 A
gFS Forward Transconductance VDS = -4.5 V, ID = -6 A 22 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -10 V, VGS = 0 V, 2250 pF
f = 1.0 MHz
Coss Output Capacitance 500 pF
Crss Reverse Transfer Capacitance 200 pF
SWITCHING CHARACTERISTICS (Note 2)
FDS6875 Rev.C
Typical Electrical Characteristics
20
VGS = -4.5V 2.5
- I D, DRAIN-SOURCE CURRENT (A)
-2.5V
DRAIN-SOURCE ON-RESISTANCE
-3.0V
15
R DS(ON), NORMALIZED
2 V GS = -2.0V
-2.0V
10
1.5
-2.5 V
-3.0 V
-3.5 V
5
1 -4.5V
0
0 0.6 1.2 1.8 2.4 3 0.5
0 4 8 12 16 20
- V DS , DRAIN-SOURCE VOLTAGE (V)
- I D , DRAIN CURRENT (A)
1.6 0.1
I D = -3.0A
DRAIN-SOURCE ON-RESISTANCE
I D= -6A
1.2 0.06
1 0.04 T A= 125°C
0.6 0
-50 -25 0 25 50 75 100 125 150 1 2 3 4 5
T , JUNCTION TEMPERATURE (° C) -V , GATE TO SOURCE VOLTAGE (V)
J GS
20 20
VGS = 0V
- I S , REVERSE DRAIN CURRENT (A)
V DS = -5.0V TJ = -55° C
5
25° C
- I D, DRAIN CURRENT (A)
15
125° C 1 TJ = 125° C
25° C
10 0.1
-55° C
5 0.01
0 0.001
0.5 1 1.5 2 2.5 0 0.3 0.6 0.9 1.2
- VGS , GATE TO SOURCE VOLTAGE (V) - VSD , BODY DIODE FORWARD VOLTAGE (V)
FDS6875 Rev.C
Typical Electrical Characteristics (continued)
5 4000
- V GS , GATE-SOURCE VOLTAGE (V)
ID = -6A
Ciss
2000
4
V DS = -5V
CAPACITANCE (pF)
-10V
-15V 1000
3
Coss
500
2
Crss
1 200 f = 1 MHz
VGS = 0 V
0 100
0 5 10 15 20 25 0.1 0.2 0.5 1 2 5 10 20
Q g , GATE CHARGE (nC) - V DS , DRAIN TO SOURCE VOLTAGE (V)
30 10 30
IT 0u
LIM s
10 N) 1m SINGLE PULSE
S(O s 25
RD 10m
- I D , DRAIN CURRENT (A)
RθJA =135°C/W
s
3 10 TA = 25°C
0m 20
POWER (W)
s
1s
0.5 10 15
s
DC
VGS = -4.5V 10
SINGLE PULSE
0.05 RθJA = 135° C/W 5
TA = 25° C
0.01 0
0.1 0.3 1 2 5 10 30 0.01 0.1 0.5 10 50 100 300
- VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.
1
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.2 R θJA (t) = r(t) * R θJA
0.1 0.1 R JA = 135°C/W
θ
0.05 0.05
0.02 P(pk)
0.02
0.01
0.01 t1
t2
Single Pulse
0.005
TJ - TA = P * R θJA(t)
0.002 Duty Cycle, D = t1 /t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)
FDS6875 Rev.C
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.