Escolar Documentos
Profissional Documentos
Cultura Documentos
com
FSDM07652R
Features
Precise Fixed Operating Frequency (66kHz) Low power consumption (under 1W) at 265VAC with 0.5W load using a burst-mode operation Pulse by Pulse Current Limit Abnormal Over Current Protection (Auto Restart Mode) Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Thermal Shutdown (Auto Restart Mode) Under Voltage Lockout Fully Avalanche Rated and 100% Tested SenseFET Internal Soft Start
Application
LCD Monitor SMPS Adaptor
Vstr 6
Drain 1
Istart
Vref 8V/12V Vcc good Internal Bias
Vcc Idelay Vref OSC IFB
2.5R
PWM
FB 4
R Q
Soft start
R LEB
Gate driver
2 GND
AOCP
Vocp
Rev.1.0.1
2003 Fairchild Semiconductor Corporation
FSDM07652R
Pin Definitions
Pin Number 1 2 3 Pin Name Drain GND Vcc Pin Function Description This pin is the high voltage power SenseFET drain. It is designed to drive the transformer directly. This pin is the control ground and the SenseFET source. This pin is the positive supply voltage input. During start up, the power is supplied by an internal high voltage current source that is connected to the Vstr pin. When Vcc reaches 12V, the internal high voltage current source is disabled and the power is supplied from auxiliary transformer winding. This pin is internally connected to the inverting input of the PWM comparator. The collector of an optocoupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 6.0V, the over load protection is activated resulting in shutdown of the FPS. This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external capacitor that is conneted to the Vcc pin. Once Vcc reaches 12V, the internal current source is disabled.
Feedback
5 6
N.C Vstr
FSDM07652R
Symbol VDGR VGS IDM EAS IAS VCC VFB PD(Watt H/S) Derating Tj TA TSTG
Value 650 30 28 370 13 19 -0.3 to VCC 62 1.163 +150 -25 to +85 -55 to +150
Single Pulsed Avalanche Energy Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range
Notes: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L= mH, starting Tj=25C 4. L=13uH, starting Tj=25C
FSDM07652R
Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Condition VGS = 0V, ID = 250A VDS = 650V, VGS = 0V VDS= 520V VGS = 0V, TC = 125C VGS = 10V, ID = 1.8A VDS = 50V, ID = 1.8A VGS = 0V, VDS = 25V, f = 1MHz VDD= 325V, ID= 6.5A (MOSFET switching time is essentially independent of operating temperature) VGS = 10V, ID = 6.5A, VDS = 520V (MOSFET switching time is essentially independent of operating temperature)
Min. 650 -
Unit V A A
mho pF
ns
nC
FSDM07652R
Note: 1. These parameters, although guaranteed at the design, are not tested in mass production.. 2. These parameters, although guaranteed, are tested in EDS(wafer test) process.
FSDM07652R
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
1.2 1.0 Start Thershold Voltage (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
-50
-25
25
50
75
100
125
Junction Temperature()
1.2 1.0 Maximum Duty Cycle (Normalized to 25) FB Source Current (Normalized to 25) -50 -25 0 25 50 75 100 125 0.8 0.6 0.4 0.2 0.0 Junction Temperature()
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
FSDM07652R
1.2 1.0 Shutdown FB Voltage (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
1.2 1.0 Shutdown Delay Current (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
Burst Mode Enable Voltage (Normalized to 25)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
1.2 1.0 Over Current Limit (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
FSDM07652R
1.2 1.0 Soft Start Time (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
FSDM07652R
Functional Description
1. Startup : At startup, an internal high voltage current source supplies the internal bias and charges the external capacitor that is connected to the Vcc pin as illustrated in figure 1. When Vcc reaches 12V, the FPS begins switching operation and the internal high voltage current source is disabled. Then, the FPS continues its normal switching operation until Vcc goes below the stop voltage of 8V and the power is supplied from the auxiliary transformer winding.
V DC Vc
Vcc 2uA Vref 0.9mA
OSC
Vo
Vfb
FB 4
Cfb
D1
D2 Vfb*
R
431
VSD
OLP
Vcc 3 6
Vstr
Istart
Vref 8V/12V Vcc good Internal Bias
2. Feedback Control : FSDM07652R employs current mode control. As illustrated in figure 2, the feedback voltage determines the peak value of the SenseFET drain current. Usually opto-coupler along with TL431 are used to implement feedback network. The collector of the optocoupler transistor is connected to feedback pin and the emitter is connected to the ground pin. When the voltage of the reference pin of TL431 exceeds the internal reference voltage of 2.5V, the optocoupler diode current increases, pulling down the feedback voltage. 2.1 Pulse-by-pulse current limit: Because current mode control is employed, the drain current of the power MOSFET is limited by the inverting input of PWM comparator (Vfb*). Assuming that the 0.9mA current source flows only through the internal resistor (2.5R +R= 3 k), the cathode voltage of diode D2 is about 2.7V. Since D1 is blocked when the feedback voltage (Vfb) exceeds 2.7V, the maximum voltage of the cathode of D2 is 2.7V. Therefore, the maximum value of Vfb* is about 0.8V, which determines the maximum peak value of the power MOSFET drain current. 2.2 Leading edge blanking (LEB) : When MOSFET turns on, usually there exists high current spike in the MOSFET current caused by primary-side capacitance and secondaryside rectifier reverse recovery. In order to prevent premature termination of the switching pulse due to the current spike, the FPS employs leading edge blanking (LEB). The leading edge blanking circuit inhibits the PWM comparator for a short time after the MOSFET is turned on.
3. Protection Circuit : The FSDM07652R has 4 self protective functions such as over load protection (OLP), abnormal over current protection (AOCP), over voltage protection (OVP) and thermal shutdown (TSD). Because these protection circuits are fully integrated into the IC without external components, the reliability can be improved without cost increase. In the event of these fault conditions, the FPS enters into auto-restart operation. Once the fault condition occurs, switching operation is terminated and MOSFET remains off, which forces Vcc to be reduced. When Vcc reaches 8V, the protection is reset and the internal high voltage current source charges Vcc capacitor. When Vcc reaches 12V, the FPS resumes its normal operation if the fault condition is removed. In this manner, the auto-restart alternately enables and disables the switching of the power MOSFET until the fault condition is eliminated as shown in figure 3.
Fault occurs
Vds
Power on
Fault removed
Vcc
12V 8V
t
Normal operation Fault situation Normal operation
3.1 Over Load Protection (OLP) : Overload means that the load current exceeds a pre-set level due to an abnormal situation. In this situation, protection circuit should be activated in order to protect the SMPS. However, even when the 9
FSDM07652R
SMPS is in the normal operation, the over load protection circuit can be activated during the load transition. In order to avoid this undesired operation, the over load protection circuit is designed to be activated after a specified time to determine whether it is a transient situation or an overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SMPS is limited, and therefore the maximum input power is restricted with a given input voltage. If the output consumes beyond this maximum power, the output voltage (Vo) decreases below the set voltage. This reduces the current through the opto-coupler diode, which also reduces opto-coupler transistor current increasing feedback voltage (Vfb). If Vfb exceeds 2.7V, D1 is blocked and the 3.5uA current source starts to charge Cfb slowly compared to when the 0.9mA current source charges Cfb. In this condition, Vfb continues increasing until it reaches 6.0V, and the switching operation is terminated at that time as shown in figure 4. The delay time for shutdown is the time required to charge Cfb from 2.7V to 6.0V with 3.5uA.
3.3 Over voltage Protection (OVP) : In case of malfunction in the secondary side feedback circuit, or feedback loop open caused by a defect of solder, the current through the optocoupler transistor becomes almost zero. Then, Vfb climbs up in a similar manner to the over load situation, forcing the preset maximum current to be supplied to the SMPS until the over load protection is activated. Because energy more than required is provided to the output, the output voltage may exceed the rated voltage before the over load protection is activated, resulting in the breakdown of the devices in the secondary side. In order to prevent this situation, an over voltage protection (OVP) circuit is employed. In general, Vcc is proportional to the output voltage and the FPS uses Vcc instead of directly monitoring the output voltage. If VCC exceeds 19V, OVP circuit is activated resulting in termination of the switching operation. In order to avoid undesired activation of OVP during normal operation, Vcc should be properly designed to be below 19V. 3.4 Thermal Shutdown (TSD) : The SenseFET and the control IC are built in one package. This makes it easy for the control IC to detect the heat generation from the SenseFET. When the temperature exceeds approximately 145C, the thermal shutdown is activated. 4. Soft Start : FSDM07652R has an internal soft start circuit that increases the feedback voltage together with the MOSFET current slowly when it starts up. The soft start time is 10msec.
2.7V
T 12 = Cfb*(6.0-2.7)/I delay
T1
T2
3.2 Abnormal Over Current Protection (AOCP) : When the transformer secondary pins or the rectifier diodes are shorted, a steep current with extremely high di/dt can flow during the LEB time. Therefore, the abnormal over current protection (AOCP) block is added to ensure the reliability as shown in figure 5. It turns off the SenseFET within 300ns after the abnormal over current condition is sensed.
5. Burst operation : I In order to minimize the power dissipation in the standby mode, FSDM07652R has burst operation. The FPS enters into the auto burst mode for itself when the feedback voltage decreases as the load decreases. When the feedback voltage decreases below 0.5V, the FPS stops the switching operation. Then, the output voltage drops below the set voltage, which increases the feedback voltage. When the feedback voltage goes higher than 0.7V, the FPS resumes the switching operation and the feedback voltage decreases. When the feedback voltage drops to 0.5V again, the FPS ceases the switching operation. In this manner, the burst operation alternately enables and disables the switching of the power MOSFET to reduce the switching loss in the standby mode.
2.5R Vx
OSC
PWM
S R
Q Q
Gate driver
LEB
2 Vocp GND
AOCP
-
10
FSDM07652R
Vo
Vo set
VFB
0.7V 0.5V
Ids
Vds
time
11
FSDM07652R
1 + 2
T1:EER 3016
10
D202 MBRF10100
L201
DB101 1 2KBP06M3N257 -
C201 1000uF/25V 8
C202 + 1000uF/25V
12V
C102 220nF/275VAC
R104 5
D102 TVR10G
D201 MBRF1045
L202
Drain GND
1 2
C204 + 1000uF/10V
5V
IC101 FSDM07652R
C101 220n/275VAC
C105 22uF/50V
C106 47nF/50V
IC301 H11A817A
R202 R204 1.2k 5.6K R203 1.2k IC201 KA431 C205 47nF R205 5.6K
RT101
5D-9
250V 2A
F101 FUSE
1 Np 2
10
12
FSDM07652R
3.Winding Specification
No Nvcc Np/2 Nvo1 Nvo2 Np/2 Pin (sf) 45 21 10 8 76 32 Wire 0.2 1 Turns 8 18 7 3 18 Winding Method Center Winding Solenoid Winding Center Winding Center Winding Solenoid Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers 0.4 1 0.3 3 0.3 3 0.4 1 Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Outer Insulation: Polyester Tape t = 0.050mm, 2Layers
4.Electrical Charateristics
Pin Inductance Leakage Inductance 1-3 1-3 Specification 520uH 10% 10uH Max Remarks 100kHz, 1V 2nd all short
13
FSDM07652R
14
FSDM07652R
Package Dimensions
TO-220F-6L(Forming)
15
FSDM07652R
Ordering Information
Product Number FSDM07652RYDTU
YDTU : Forming Type
Package TO-220F-6L(Forming)
BVdss 650V
Rds(on)Max. 1.6
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com 9/22/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.