6N60 Power Mosfet 6.

2 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION
The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

FEATURES
* RDS(ON) = 1.5 @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness

SYMBOL
*Pb-free plating product number: 6N60L

ORDERING INFORMATION
Ordering Number Normal 6N60-x-TA3-T Lead Free Plating 6N60L-x-TA3-T TO-220 Package Pin Assignment 1 G 2 D 3 S Tube Packing

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6N60 Power Mosfet

ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) Continuous Drain Current Pulsed Drain Current (Note 1) Avalanche Energy Power Dissipation Junction Temperature Operating Temperature Storage Temperature 6N60-A 6N60-B SYMBOL VDSS VGSS IAR ID IDM EAS EAR PD TJ TOPR TSTG RATINGS 600 650 30 6.2 6.2 3.9 24.8 440 13 62.5 +150 -55 ~ +150 -55 ~ +150 UNIT V V V A A A A mJ mJ W C C C

TC = 25C TC = 100C Single Pulsed (Note 2) Repetitive (Note 1)

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL JA JC RATING 62 2 UNIT C/W C/W

ELECTRICAL CHARACTERISTICS (TJ =25, unless otherwise specified)

PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDS=480V, ID=6.2A, VGS=10 V (Note 4, 5) VDD=300V, ID =6.2A, RG =25 (Note 4, 5) 20 70 40 45 20 4.9 9.4 50 150 90 100 25 ns ns ns ns nC nC nC VGS(TH) RDS(ON) VDS = VGS, ID = 250A VGS = 10V, ID = 3.1A 2.0 4.0 1.5 V SYMBOL 6N60-A 6N60-B Forward Reverse BVDSS IDSS IGSS BVDSS/TJ TEST CONDITIONS VGS = 0V, ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ID = 250 A, Referenced to 25C 0.53 MIN 600 650 10 100 -100 TYP MAX UNIT V V A nA nA V/C

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6N60 Power Mosfet

ELECTRICAL CHARACTERISTICS
PARAMETER Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge tRR QRR VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/s (Note 4) 290 2.35 ns ns ISM 24.8 A SYMBOL VSD IS TEST CONDITIONS VGS = 0 V, IS = 6.2 A MIN TYP MAX 1.4 6.2 UNIT V A DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

1. Repetitive Rating : Pulse width limited by TJ 2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25C 3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

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6N60 Power Mosfet

TEST CIRCUITS AND WAVEFORMS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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6N60 Power Mosfet

TEST CIRCUITS AND WAVEFORMS (Cont.)

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6N60 Power Mosfet

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