Didier Cottet, Stanislav Skibin, Ivica Stevanovic ABB Switzerland Ltd., Corporate Research, 28.

May 2010

EMC Simulations of Power Electronic Devices and Systems

ABB Group June 2, 2010 | Slide 1

Outline
Introduction Numerical Method Device Simulations System Simulations Conclusion

!! !! !! !! !!

ABB Group June 2, 2010 | Slide 2

Introduction PE in Power Supply & Distribution

Where do we find power electronics in power generation, transmission and distribution?

!!

ABB Group June 2, 2010 | Slide 3

Introduction PE in Power Supply & Distribution

Static excitation systems

SVC Light with energy storage

Solar inverters

Grid stabilization Photovoltaic Power stations

ABB Group June 2, 2010 | Slide 4

Introduction PE in Power Supply & Distribution

HVDC for shore connection

AC drives for pumps

Oil platforms

ABB Group June 2, 2010 | Slide 5

Introduction PE in Power Supply & Distribution

Generator frequency converter

StatComs for grid code

HVDC for shore connection

Wind parks

ABB Group June 2, 2010 | Slide 6

Introduction EMC / EMI in Power Electronics

!!

EMC (compatibility)
!! !!

!! !!

Standards compliancy Switching harmonics / THD (up to 25th / 40th harmonic) Conducted emissions (150 kHz 30 MHz) Radiated emissions (30 MHz 1 GHz)

!!

EMI (interferences)
!! !!

!! !!

Malfunction through self disturbance Performance de-rating !! through load imbalance !! through voltage/currents overshoots Low ruggedness in short circuit mode Electric stress through ringing and oscillations

ABB Group June 2, 2010 | Slide 7

Outline
Introduction Numerical Method Device Simulations System Simulations Conclusion

!! !! !! !! !!

ABB Group June 2, 2010 | Slide 8

Methodology PEEC Partial Element Equivalent Circuits

1) 3D geometry description and materials definition 2) Geometry subdivision " Nodes

3) Surface mesh " Node capacitances, C to GND to other nodes 4) Volume mesh " Node-to-node resistances, R self inductances, L " Mutual inductances, M 5) RLCM-circuit description

ABB Group June 2, 2010 | Slide 9

Methodology Modeling Procedures

!! !! !! !! !! !!

3D Broadband Solution Time and frequency domain Current and potential distributions E-/H-fields Linear elements only Slow

!! !!

Order reduced Z-matrix for defined frequency fextr

!! !! !! !!

SPICE, Simplorer,

!!

0D Narrowband Solution Valid around frequency fextr Time and frequency domain Nonlinear elements No current/potential distributions No E-/H-fields Fast

ABB Group June 2, 2010 | Slide 10

Outline
Introduction Numerical Method Device Simulations System Simulations Conclusion

!! !! !! !! !!

ABB Group June 2, 2010 | Slide 11

Simulated Device IGBT Power Modules

!!

Example: HiPak IGBT power module

!! !! !!

Rating: 6.5 kV, 2.4 kA 24 parallel IGBTs 12 anti-parallel diodes

!!

EMI related design issues

!! !! !! !!

Dynamic / static current distribution Short circuit capabilities EM noise emission CM coupling through base plate

6!

!!

Dominant effect
!!

Local disturbances in IGBT gate voltages, UGE

ABB Group June 2, 2010 | Slide 12

Modeling Package Macro Modeling

!!

3D PEEC model
!! !! !! !!

Substrates Bond wires Power terminals Auxiliary terminals

********************************************** *** subcircuit for hipak_package v1.0 ********************************************** .subckt hipak_package_v1 1 2 3 4 5 6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 2728 29 30 31 32 33 34 35 36 37 38 LZ_0 1 LZ_1 3 LZ_2 5 LZ_3 7 LZ_4 9 . . . KZ_1_0 KZ_2_0 KZ_2_1 KZ_3_0 KZ_3_1 . . . RZ_0_0 HZ_0_1 HZ_0_2 HZ_0_3 HZ_0_4 HZ_0_5 . . . Vam_18 .ends i_node0_2 i_node1_2 i_node2_2 i_node3_2 i_node4_2 2.25402e-008 1.44454e-008 9.15187e-009 2.30544e-008 1.48664e-008

!!

Extraction of SPICE compatible Z-matrix (0D narrowband solution)

LZ_1 LZ_2 LZ_2 LZ_3 LZ_3

LZ_0 LZ_0 LZ_1 LZ_0 LZ_1

0.888218 0.662318 0.812005 0.0200939 -0.0428358

i_node0_2 i_node0_3 i_node0_4 i_node0_5 i_node0_6 i_node0_7

i_node0_3 i_node0_4 i_node0_5 i_node0_6 i_node0_7 i_node0_8

0.000948648 Vam_1 0.000703874 Vam_2 0.000529978 Vam_3 4.56201e-005 Vam_4 4.65392e-005 Vam_5 4.79563e-005

i_node18_21 38 dc=0v

ABB Group June 2, 2010 | Slide 13

Modeling Circuit Model

IGBTs & diodes Load Gate signal

Package Z-matrix

IGBTs & diodes

ABB Group June 2, 2010 | Slide 14

Results Switching Analysis

IGBTs 1-4 IGBTs 5-8

!!

Initial design
Asymmetric current sharing between paralleled IGBTs " up to 140 % current overshoot per IGBT
!!

!!

Optimized design
Symmetric current sharing between paralleled IGBTs " max 60 % current overshoot per IGBT
!!

ABB Group June 2, 2010 | Slide 15

Results H-Field Coupling Analysis

!!

Understand coupling effects through visualization of magnetic field vectors and current density distributions
!! !! !!

Asymmetric coupling into VGE Asymmetric terminal current paths Open coupling loops in gate-emitter paths

(Note: 3D simulation using TLM method, Transmission Line Matrix)

ABB Group June 2, 2010 | Slide 16

Outline
Introduction Numerical Method Device Simulations System Simulations Conclusion

!! !! !! !! !!

ABB Group June 2, 2010 | Slide 17

System Simulations New Challenges

!!

Complexity
!!

Number of components
!!

Number of simulation cases

!!

Physical dimensions
!!

Availability of input data

ABB Group June 2, 2010 | Slide 18

Case Study Medium Voltage Static Frequency Converter

!!

Static Frequency Converter

!!

!!

!!

16 inverter units (IGCTs, 3-level ANPC) 1 common DC bus (~11 m length, +/neutral/-) 18 DC link capacitors (film capacitors)

" Distributed, low resistive LC circuit " Risk of ringing and oscillations " EM noise and thermal stress of DC link capacitors

ABB Group June 2, 2010 | Slide 19

Modeling Objectives
!! !! !!

DC-link system impedance simulation Identify system resonances Analysis of individual impedance contributions (bus bars, junctions, capacitors, cables) Design goal: reduce stray inductances

!!

ABB Group June 2, 2010 | Slide 20

Modeling Bus Bar Thickness vs. Frequency

!! !!

Bus bar thickness:

t = 2 cm

Frequency of interest: DC to 10 kHz

" Skin depth ~ bar thickness " Need for accurate & efficient volume discretization " Non-uniform cross-sectional meshing

ABB Group June 2, 2010 | Slide 21

Model Verification Simulations vs. Measurements

Impedance measurement setup Capacitor cables to bus bar

meas. sim.

short circuit, 0D narrowband

meas. sim.

capacitive load, 0D narrowband

" High accuracy with 0D narrowband solution

ABB Group June 2, 2010 | Slide 22

Model Improvement Acceleration

!!

Accurate volume discretization for skinand proximity effects

!! !! !!

Large PEEC model Many ports Large RL-matrix in Simplorer

!!

Acceleration through divide and conquer

(domain decomposition)
!! !! !!

3 small PEEC model Few ports 9 small RL-matrices in Simplorer

left

7 x intermediate

right

ABB Group June 2, 2010 | Slide 23

Model Improvement Full Model

!9

ABB Group June 2, 2010 | Slide 24

Model Improvement Decomposed (Segmented) Model

!9

ABB Group June 2, 2010 | Slide 25

Model Improvement Verification

- Full model - Segmented model

- Full model - Segmented model

" High agreement between full and segmented model " High agreement between 3D broadband PEEC and 0D narrowband segmented model

- 0D narrowband ! 3D broadband

ABB Group June 2, 2010 | Slide 26

Results Impedance Discussion

!!

Single capacitor connected at far end of bus bar

Cap + cables + bus bar Cap + cables Cap

!!

Nine capacitors connected along bus bar

Complete bus bar Simplified bus bar (no junction elements) Ideal connection

" Impact on fres: bus bar and cables

ABB Group June 2, 2010 | Slide 27

" Impact on Z characteristics: bus bar and junctions

Outline
Introduction Numerical Method Device Simulations System Simulations Conclusion

!! !! !! !! !!

ABB Group June 2, 2010 | Slide 28

Conclusion
!! !!

Power electronics omnipresent in power T&D EMC and EMI in power electronics are known issues PEEC as promising numerical method for its flexibility
!! !! !! !!

!!

Frequency range (DC to HF) Scalability (R, L, C) Time- and frequency domain Circuit formulation

!! !! !!

Device simulations: Advanced state-of-the-art for System simulations: Efficient methods in available & in use Effective acceleration methods for large system simulations PEEC simulations as powerful tool for bus bar design

!!

ABB Group June 2, 2010 | Slide 29

 ABB Group June 2, 2010 | Slide 30