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PART I
ELECTRICAL CONDUCTIVITY
50
100
YEARS
Graphene
Nanotubes
Fullerenes
GRAPHENE BEFORE AND AFTER 2004 After 2004: GRAPHENE OUT One (or a few) supported or free-standing graphene planes : the object of this school Before 2004: GRAPHENE IN One (or a few) graphene planes sandwiched between insulating layers: the story of acceptor graphite intercalation compounds (GACs)
2D INTERCALATION OF GRAPHITE
Graphene layers
Intercalate layer
Intercalation
1/ r = = q N
ELECTRICAL CONDUCTIVITY
10
HOPG
GACs Real graphene
3D
2D 2D
1 P.R. Wallace, Phys. Rev. 71, 622 (1947) 2 J.W. McClure, Phys. Rev, 108, 612 (1957); 119, 606 (1960) Slonczewski, J. C., and Weiss, P. R., 1958, Phys. Rev., 109, 272. 3 Blinowski, J., Nguyen, H. H., Rigaux, C., Vieren, J. P., LeToullec, R., Furdin, G., Hrold, A., and Mlin, J., 1980, J. Phys., Paris, 41, 47.
EF
Blinowski-Rigaux band model for stages 1 & 2 GACs The dispersion relation for a stage-1 compound is:
g0
b
stage-1
stage-2
BAND STRUCTURES
From:
Graphene
Carbon nanotube
Representation of stage-1 graphite-FeCl3 compound showing the graphene layers sandwiched between intercalate layers
Red arrows indicate graphene planes and the blue ones the intercalate layers. Note that the intercalate layers maintain the bulk FeCl3 structure.
As regards electrical conduction, one may consider graphene conductors in parallel, insulated from each other by the intercalant.
A g
A B
A B A
A b I c= 5.35 A a A I = 8.75 c B C
= 15.44 Ic
C A
C B C
ELECTRICAL RESISTIVITY OF GACs The graphene layers (red arrows) act as 2D resistances in parallel: R1, R2, Ri R1
or
Ctot = Ci R2
BULK CARBONS
only semiclassical (until the mid-1980s), quantum (since the mid-1980s): weak localization effects, massless fermions (stage-1 GACs).
NANOSTRUCTURED CARBONS
- NANOTUBES non relativistic quantum mechanics (NRQM) to describe most of its properties weak localization, Universal Conductance Fluctuations, ballistic transport. - GRAPHENE relativistic quantum mechanics (RQM) or quantum electrodynamics (QED), massless Dirac fermions, ballistic transport.
EFFECT OF INTERCALATION ON THE TEMPERATURE VARIATION OF THE ELECTRICAL RESISTIVITY OF A PRISTINE GRAPHITE
As a result of charge transfer, intercalation increases the hole density, N. A decrease in the mobility, , is due to the defects introduced by the intercalation process. The net result here is a significant decrease in the in-plane electrical resistivity, r.
10
-4
BDF ( T HT=2900C)
Resistivity (W.cm)
10
-5
1/ r = = q N
Electrical resistivities are in W.cm.
10
50
300
From: Chieu, Dresselhaus , Endo & Moore, PRB 27, 3686 (1983)
j = q Nj j
Mobility
Electronic charge
= j
MATTHIESSENS RULE
total resistivity
ideal resistivity
r = rr + ri
residual resistivity
does not vary with temperature -> static defects (defect scattering)
This diagram shows clearly the lower bound for the room temperature electrical resistivity of GACs, i.e. around 3.4 10-6 W.cm, since it is the intrinsic value due to electron-phonon large-angle scattering at this temperature.
27
300 [ W .m]
10 1
10 0 10 1 10 2 10 3 [nm] 10 4
La
Even at RT, the resistivity of pristine carbons is dominated by boundary scattering up to about 1 m crystallite size.
From: B. Nysten, Ph D Thesis, Louvain-la-Neuve (1991)
Bismuth
HOPG Graphene
43 106
6.4 105
6.7 104 ~106 ??
3.2 104
1.2 104
WHY ARE MOBILITIES LOW IN METALS AND HIGH IN SEMIMETALS AND SEMICONDUCTORS ?
MATERIAL HIGH TEMPERATURE large-angle scattering with large number of high energy interacting phonons. LOW MOBILTY large-angle scattering with small number of interacting low-energy phonons. HIGH MOBILITY large-angle scattering with small number of interacting low-energy phonons. HIGH MOBILITY LOW TEMPERATURE small-angle scattering with small number of interacting low-energy phonons. HIGH MOBILITY large or small-angle scattering with small number of interacting low-energy phonons. VERY HIGH MOBILITY large or small-angle scattering with small number of interacting low-energy phonons. VERY HIGH MOBILITY
METALS
(high carrier densities)
SEMIMETALS
(for small charge carrier densities)
SEMICONDUCTORS
(for small charge carrier densities)
SMALL AND LARGE-ANGLE ELECTRON-PHONON SCATTERING efficient scattering > change of direction
q k' F
large angle
*
e kF eF
small angle
kF
a small decrease
FORBIDDEN TRANSITION
(SEMIMETALS)
e e'
k'
*
kF
eF kF k' k
1.012
R [T] / Rmin
1.008
1.004
1.000
10
100
Temperature [K]
WHAT HAPPENS WHEN WE INTERCALATE FLUORINE ? WHY IS THE RESULTING GAC IS SO DIFFERENT THAN ITS COUSINS ?
- Charge transfer modifies the electronic parameters by increasing charge carrier density first, then decreasing it: SEMIMETAL > METAL > POOR CONDUCTOR > INSULATOR
- Distortion of graphene planes increases the disorder experienced by the hole & phonon gases > Weak to strong localization of holes - Dimensionality Transition from 3D to quasi-2D to 3D system
A unique situation
3D
Resistivity (m.cm)
100 10
3D
strong disorder
1 0.1 0.01 2 4 6 8 10 12 1
kF.l
10 100
Pristine C
weak disorder
x in C F
LOW TEMPERATURE WEAK LOCALIZATION EFFECTS IN CxF COMPARED TO GICs METAL CHLORIDES
Piraux et al., (MIT, Shinshu, Kyoto, ICMCB, LLN)
GICs Metal Chlorides
1.002
1.001
1.000
Temperature [K]
10
100
Note that for high fluorine concentration, the effect is two orders of magnitude larger in CxF than in other GACs
CONCLUDING REMARKS
Band structure When we consider a single graphene sheet, Wallace is always right.
Mobilities There are materials with higher mobilities than graphene, where there is still room (at the top) for increase. But who cares about mobilities, once in the ballistic regime.
Fluorine The particular case of fluorine in the bulk gives a clear indication for the nanostructured carbons
GENERAL CONCLUSION Researchers in carbons have long fantasized about graphene. Now it is there. Enjoy it. Theorists wake up earlier than experimentalists, but if they want to see their predictions confirmed, they have to wait till the experimenters wake up. Fortunately, you cannot predict everything and this allows science to keep going and the younger generations to have fun. __________________________________________________________ Thanks to: J-C Charlier, UCL, M.S Dresselhaus, MIT, L. Piraux, UCL, J. Heremans, OSU.