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FDS5690

March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild
March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild

March 2000

FDS5690

60V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

DC/DC converter Motor drives

Features

7 A, 60 V. R DS(on) = 0.028 @ V GS = 10 V

R DS(on) = 0.033

@ V GS = 6 V.

Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely

low R DS(ON) .

High power and current handling capability.

D G S SO-8 S S D D D
D
G
S
SO-8
S
S
D
D
D
5 4 6 3 7 2 8 1
5 4
6 3
7 2
8 1

Absolute Maximum Ratings

T A = 25°C unless otherwise noted

 

Symbol

 

Parameter

Ratings

Units

  • V DSS

Drain-Source Voltage

60

V

  • V GSS

Gate-Source Voltage

± 20

V

I

D

Drain Current

- Continuous

(Note 1a)

7

A

 

- Pulsed

50

 

P D

Power Dissipation for Single Operation

(Note 1a)

2.5

W

 

(Note 1b)

1.2

(Note 1c)

1

T J , T stg

Operating and Storage Junction Temperature Range

-55 to +150

° C

Thermal Characteristics

 

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

° C/W

R θ JA R θ JC

Thermal Resistance, Junction-to-Case

(Note 1)

25

° C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDS5690

FDS5690

13’’

12mm

2500 units

2000

Fairchild Semiconductor Corporation

FDS5690

Rev. C

FDS5690

DMOS Electrical Characteristics

T A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV DSS

Drain-Source Breakdown Voltage

V GS = 0 V, I D = 250 µ A

60

   

V

BV DSS

Breakdown Voltage Temperature

I D = 250 µ A, Referenced to 25 ° C

 

57

 

mV/ ° C

T J

Coefficient

I

DSS

Zero Gate Voltage Drain Current

V DS = 48 V, V GS = 0 V

   

1

µ A

GSSF

I

Gate-Body Leakage Current, Forward

V GS = 20 V, V DS = 0 V

   

100

nA

GSSR

I

Gate-Body Leakage Current, Reverse

V GS = -20 V, V DS = 0 V

   

-100

nA

On Characteristics

(Note 2)

V

GS(th)

Gate Threshold Voltage

 

V DS = V GS , I D = 250 µ A

2

2.5

4

V

V GS(th)

Gate Threshold Voltage

 

I D = 250 µ A, Referenced to 25 ° C

 

-5.9

 

mV/ ° C

 

T J

Temperature Coefficient

R DS(on)

Static Drain-Source

 

V GS = 10 V, I D = 7 A

 

0.022

0.028

On-Resistance

V GS = 10 V, I D = 7 A, T J =125 ° C

0.037

0.050

V GS = 6 V, I D = 6.5 A

0.025

0.033

D(on)

I

On-State Drain Current

 

V GS = 10 V, V DS = 5 V

25

   

A

g FS

Forward Transconductance

V DS = 10 V, I D = 7 A

 

24

 

S

Dynamic Characteristics

 

C

iss

Input Capacitance

 

V DS = 30 V, V GS = 0 V,

 

1107

 

pF

C

oss

Output Capacitance

 

f = 1.0 MHz

 

149

 

pF

C

rss

Reverse Transfer Capacitance

   
  • 72 pF

 

Switching Characteristics

(Note 2)

t d(on)

Turn-On Delay Time

 

V DD = 30 V, I D = 1 A,

   
  • 10 ns

18

 

t r

Turn-On Rise Time

 

V GS = 10 V, R GEN = 6

 

9

18

ns

t d(off)

Turn-Off Delay Time

     
  • 24 ns

39

 

t f

Turn-Off Fall Time

     
  • 10 ns

18

 

Q g

Total Gate Charge

 

V DS = 30 V, I D = 7 A,

   
  • 23 nC

32

 
 

Q gs

Gate-Source Charge

 

V GS = 10 V,

 

4

 

nC

 

Q gd

Gate-Drain Charge

   

6.8

 

nC

Drain-Source Diode Characteristics and Maximum Ratings

 

S

I

Maximum Continuous Drain-Source Diode Forward Current

     

2.1

A

V

SD

Drain-Source Diode Forward Voltage

V GS = 0 V, I S = 2.1 A

(Note 2)

 

0.75

1.2

V

: 1 1 Scale on letter size paper Pulse Test: Pulse Width ≤ 300 µs, Duty
:
1
1
Scale
on letter size paper
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
drain pins. R θJC is guaranteed by design while R θJA is determined by the user's board design.
R θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
c) 125° C/W when
mounted on a 0.003 in 2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in 2
pad of 2 oz. copper.
a) 50° C/W when
mounted on a 0.5 in 2
pad of 2 oz. copper.
Notes:
1.
2.

FDS5690

Typical Characteristics

0 5.0V 6.0V 4.5V 4.0V 3.5V V GS = 10V 50 40 30 20 10
0
5.0V
6.0V
4.5V
4.0V
3.5V
V GS = 10V
50
40
30
20
10
2 1 0.8 4.5V 5.0V 7.0V 6.0V 10V V GS = 4.0V 1.8 1.6 1.4 1.2
2
1
0.8
4.5V
5.0V
7.0V
6.0V
10V
V GS = 4.0V
1.8
1.6
1.4
1.2
  • 0123456 0

10

20

30

40

50

V DS , DRAIN-SOURCE VOLTAGE (V)

I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

V GS = 10V 0 75 50 25 -25 -50 125 100 150 2 I D
V GS = 10V
0
75
50
25
-25
-50
125
100
150
2
I D = 7A
0.8
0.6
0.4
1.6
1.8
1.2
1.4
1
0.02 7 5 9 8 6 4 3 10 0.01 0 0.03 0.04 0.05 0.06 0.07
0.02
7
5
9
8
6
4
3
10
0.01
0
0.03
0.04
0.05
0.06
0.07
T A = 125 o C
T A = 25 o C
I D = 3.5A

T J , JUNCTION TEMPERATURE ( o C)

V GS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

25 125 V DS = 5V o C o C T A = -55 o C
25
125
V DS = 5V
o C
o C
T A = -55 o C
0
50
40
30
20
10

100

10

1

0.1

0.01

0.001

0.0001

Figure 4. On-Resistance Variation with Gate-to-Source Voltage. T A = 125 o C V GS =
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
T A = 125 o C
V GS = 0V
-55 o C
25 o C
  • 23456 0

0.2

0.4

0.6

0.8

1

1.2

1.4

V GS , GATE TO SOURCE VOLTAGE (V)

V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS5690

Typical Characteristics (continued)

15 0 0 2 4 6 8 Q g , GATE CHARGE (nC) 25 20 DS
15
0
0
2
4
6
8
Q g , GATE CHARGE (nC)
25
20
DS
10
5
I D = 7A
20V
= 10V
30V
10
V

Figure 7. Gate Charge Characteristics.

0 0 10 60 30 50 20 40 V GS = 0 V f = 1MHz
0
0
10
60
30
50
20
40
V GS = 0 V
f = 1MHz
ISS
400
1600
1200
800
RSS
C
OSS
C
C

V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics.

DC C T A = 25 o o C/W 125 R θ JA = SINGLE PULSE
DC
C
T A = 25 o
o C/W
125
R θ JA =
SINGLE PULSE
10V
V GS =
R DS(ON) LIMIT
µ s
1
100
100ms
10ms
10s
1s
1ms
0.01
10
100
0.1
0 SINGLE PULSE T A =25 o C R θ JA =125 o C/W 50 40
0
SINGLE PULSE
T A =25 o C
R θ JA =125 o C/W
50
40
30
20
10
POWER (W)
0.2 100 300 0.01 0.0001 0.001 1 0.1 0.1 0.2 0.5 0.1 D = 0.5 0.01
0.2
100
300
0.01
0.0001 0.001
1
0.1
0.1
0.2
0.5
0.1
D =
0.5
0.01
0.02
0.05
0.01
0.02
0.05
0.1
t
1 , TIME (sec)
SINGLE PULSE TIME (SEC)
V DS , DRAIN-SOURCE VOLTAGE (V)
1000
100
10
1
0.001
0.01
0.001
100
10
1
0.1
1
10
θ JA
= P
-
A
T
J
T
t 1
= 125°C/W
R
* R
θ JA
R
*
) =
r(t)
(t
θ JA
R
/t
0.002
0.005
P(pk)
Single Pulse
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
Figure 9. Maximum Safe Operating Area.
2
Figure 10. Single Pulse Maximum
Power Dissipation.
1
t
D =
ycle,
Duty C
(t)
θ JA
t 2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E 2 CMOS TM FACT™

FAST

FASTr™

GTO™

FACT Quiet Series™

HiSeC™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

This datasheet contains the design specifications for

In Design

product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. E