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April 2000
QFET
FQP33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM
Features
33A, 100V, RDS(on) = 0.052 @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
D
!
"
G! DS
! "
" "
TO-220
FQP Series
!
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 1.18 -62.5 Units CW CW CW
FQP33N10
Electrical CharacteristicsT
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0.11 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 16.5 A VDS = 40 V, ID = 16.5 A
(Note 4)
2.0 ---
-0.040 22
4.0 0.052 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1150 320 62 1500 420 80 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 33 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 33 A, RG = 25
(Note 4, 5)
--------
ns ns ns ns nC nC nC
------
---80 0.22
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 33A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQP33N10
Typical Characteristics
10
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
10
10
10
-1
10
10
10
10
0.20
10
0.15
Drain-Source On-Resistance
VGS = 10V
0.10
VGS = 20V
R DS(ON) [ ],
10
0.05
Note : TJ = 25
175
0
25
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
2500
10
2000
Ciss Coss
Capacitance [pF]
1500
1000
Crss
500
2
Note : ID = 33A
0 -1 10
10
15
20
25
30
35
40
10
10
FQP33N10
Typical Characteristics
(Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 16.5 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
35
Operation in This Area is Limited by R DS(on)
30
10
1 ms 10 ms
10
1
100 s
25
20
15
DC
10
Notes : 1. TC = 25 C
o
10
10
10
10
0 25
50
75
100
125
150
175
(t), T h e rm a l R e s p o n s e
10
D = 0 .5
0 .2 0 .1
10
-1
N otes : 1 . Z J C ( t ) = 1 . 1 8 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )
0 .0 5
PDM
0 .0 2 0 .0 1 s in g le p u ls e
-2
JC
t1 t2
Z
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FQP33N10
VGS
DUT
3mA
Charge
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS ID (t) VDD
tp
10V
FQP33N10
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT ) IRM
di/dt
VDS ( DUT )
VSD
VDD
FQP33N10
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
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