IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO.

1, JANUARY 2008 261

2-D Analytical Model for CurrentVoltage
Characteristics and Transconductance
of AlGaN/GaN MODFETs
Miao Li and Yan Wang
AbstractA threshold-voltage-based 2-D analytical model for
the currentvoltage characteristics of the AlGaN/GaN modula-
tion-doped eld-effect transistors (MODFETs) is presented. In
this paper, the conventional charge-control model is improved
by employing the Robin boundary condition when solving the
1-D Schrdinger equation in the low longitudinal-eld region and
introducing an adjustable eigenvalue during the solution of the 2-D
Poissons equation in the velocity-saturation region. A modied
PolyakovSchwierz mobility model, as well as a low-eld mobility
model, has been developed. In addition, the nonlinear polarization
effects at the AlGaN/GaN interface and the parasitic source/drain
resistances are incorporated. Our model predicts the drain current
of a second-order continuity, and both the transconductance and
output conductance can be determined analytically. We validate
the model with experimental data for Al
0.15
Ga
0.85
N/GaN and
Al
0.5
Ga
0.5
N/GaN MODFETs, respectively, and obtained good
agreements.
Index TermsAlGaN/GaN, compact model, MODFETs, sheet
carrier concentration.
I. INTRODUCTION
A
TTRACTING a lot of attention in recent years are the
III-nitride wide band-gap semiconductors (GaN, AlN,
InN, etc.) and their alloys. Caused by spontaneous and piezo-
electric polarization, high sheet carrier concentrations (n
s
) of
10
13
cm
2
have been obtained in AlGaN/GaN MODFETs,
which make them meet the demands of high-power devices
[1], [2]. High saturation velocity obtained in the GaN channel
has shown promising performance for the high-frequency mi-
crowave applications. AlGaN/GaN MODFETs based on wide
band-gap semiconductors are capable for the high-temperature
applications [3] too. Correspondingly, some high-performance
GaN-based monolithic microwave integrated circuits, such as
voltage-controlled oscillators, mixers, and low-noise ampliers
have been reported [4][6].
Reliable and predictive analytical models are needed along
with the fast development of GaN-based devices and circuits.
Numerical device simulations are not direct for the design of
circuits involving many devices interacting with each other and
with other circuit elements. More directly applicable to the
Manuscript received February 9, 2007; revised October 8, 2007. This work
was supported by the Special Funds for Major State Basic Research Projects
2002CB311907. The review of this paper was arranged by Editor Y.-J. Chan.
The authors are with the Institute of Microelectronics, Tsinghua Univer-
sity, Beijing 100084, China (e-mail: maomaoyy@gmail.com; wangy46@
tsinghua.edu.cn).
Digital Object Identier 10.1109/TED.2007.911076
parameter optimization and extraction in the circuit designs
than the numerical device simulations, physics-based analytical
models are compatible with modern computer-aided-design
(CAD) tools and are scalable in principle [7]. However, there
are few device models for GaN-based MODFETs in commer-
cial circuit simulators reported thus far, and the Berkeley Short-
channel IGFET Model 3 (BSIM3) for silicon MOSFETs or
some empirical models have been used as substitutes [4], [8],
[9]. In particular, there are only limited physics-based analytical
models available for AlGaN/GaN MODFETs. For example,
Rashmi et al. [10] have developed one analytical model which
piecewise describes the currentvoltage (IV ) characteristics
accurately in weak, moderate, and strong inversion regions.
However, they did not take into account the variation of
drain current after saturation. Another analytical model for the
IV characteristics and output conductance of AlGaN/GaN
MODFETs has been developed [11], which assumes the carrier
concentration (n
s
) to be constant with respect to the drain-to-
source bias in saturation.
We present in this paper a threshold-voltage-based 2-D
analytical model for the IV characteristics of AlGaN/GaN
MODFETs. We have made modications for the conventional
charge-control model. In the low longitudinal-eld region, the
inltration of the 2-D electron gases (2-DEG) wave func-
tion to the spacer layer is considered, and the Robin bound-
ary condition is introduced to replace the commonly used
Dirichlet conditions for the Schrdinger equation. In the
velocity-saturation region, the 2-D Poissons equation is solved,
and an adjustable eigenvalue is introduced to describe the vari-
ation of the carrier concentrations with respect to the drain-to-
source biases. A modied PolyakovSchwierz (MPS) mobility
model is proposed, in which a low longitudinal-eld mobility
model is developed. Nonlinear polarization effects [12] and
parasitic resistances in source and drain regions [11] are incor-
porated in our model. The model is implemented in the HSPICE
simulator by Verilog-A, and a good t with the experimental
data is obtained for Al
0.15
Ga
0.85
N/GaN and Al
0.5
Ga
0.5
N/GaN
MODFETs, thus validating our models.
II. MODEL DESCRIPTION
The cross-sectional view of an AlGaN/GaN MODFET is
shown in Fig. 1. The layer sequence is, from top to bottom,
metal/n-AlGaN/undoped-AlGaN/undoped-GaN with a 2-DEG
formed at the unintentionally doped (UID)-AlGaN/GaN inter-
face [10].
0018-9383/$25.00 2008 IEEE
262 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 1, JANUARY 2008
Fig. 1. Cross-sectional view of an AlGaN/GaN MODFET with gate length L,
n-AlGaN layer thickness d
d
, and spacer layer thickness d
i
. The origin o is at
the left side of the heterointerface. The lengths of the low-eld and saturation
regions in the channel are L
1
and L
2
, respectively. S is the point of onset of the
velocity saturation, where the longitudinal electric eld is dened as E
T
.
A. Charge-Control Model
In the low longitudinal-eld region with the applied gate-to-
source bias V
gs
, the sheet carrier density n
s
in the channel can
be obtained by the self-consistent solution of the 1-D Poissons
and Schrdinger equations [13]
n
s
=

qd
(V
gs
V
o
E
F
) (1)
where q is the electron charge, and d = d
d
+d
i
are the
permittivity and the total thickness of the AlGaN layer, respec-
tively, E
F
is the Fermi level with respect to the bottom of the
conduction band in the GaN layer, and V
o
is the threshold
voltage of the MODFET given by [10]
V
o
=
B
E
C

qN
D
d
2
d
2

q

(d
d
+d
i
) (2)
where
B
is the barrier height of the Schottky gate, E
c
is the discontinuity of the conduction band at the interface
between the UID-AlGaN and the GaN layers, N
D
is the doping
concentration in n-AlGaN layer, and is the polarization-
induced charge density at the interface. A nonlinear model
to describe the spontaneous and piezoelectric polarizations is
utilized, which is discussed in [12]. E
F
is found to be a
nonlinear function of n
s
in the form of simple polynomial [14]
E
F
= k
1
+k
2
n
1/2
s
+k
3
n
s
. (3)
Generally, some typical E
F
and n
s
which are determined
from the solution of the Schrdinger equation are chosen for
the calculation of the parameters k
1
, k
2
, and k
3
[14]. Con-
ventionally, the Dirichlet boundary condition that assumes that
the wave function is zero at the interface of the AlGaN/GaN
is used. However, because E
c
is at most comparable to the
band gap of GaN and, thus, the barrier for electron is nite,
strictly speaking, the 2-DEG wave function should inltrate
into the AlGaN spacer layer from the channel, and the Robin
boundary condition should be adopted. Thus, in our model,
we apply
C(0) +

(0) = 0 (4)
where C is a constant independent on the position.
We restrict C in a certain range and then compute the eigen-
value of energy from the Schrdinger equation. Then, we calcu-
TABLE I
k
1
, k
2
, AND k
3
FOR ELECTRON MASS m

= 0.22 m
0
AT DIFFERENT TEMPERATURES
Fig. 2. Measured and simulated (a) sheet carrier density and (b) Fermi level
versus the gate bias for the structure with 25% Al content. The barrier thickness
d = 35 nm and the threshold voltage V
OFF
= 6.75 V.
late the E
F
and n
s
and compare the results with the measured
and simulated data. A good agreement with the experimental
data has been obtained when C = 0.4 as a general parameter.
Finally, we calculated for n
s
= 10
16
, 6 10
16
, 10
17
m
2
by a
method similar to [14] and found k
1
, k
2
, and k
3
, as shown in
Table I.
The calculated n
s
versus V
gs
from our method is compared
with those from the Dirichlet boundary condition [14] and
experimental data [15], as shown in Fig. 2(a). It can be seen
that, in high gate-to-source biases, our results are more accurate
than those in [14]. The carrier density does not seem to be very
sensitive to the inltration. We also present the relationship
of calculated E
F
versus V
gs
in Fig. 2(b). The differences of
E
F
from those two methods are obvious, which means that
the inltration exerts inuences on the Fermi level and can
hardly be ignored. Different E
F
s may cause the change in
the gate overdrive, which affects the dc characteristics of
MODFETs.
LI AND WANG: MODEL FOR CURRENTVOLTAGE CHARACTERISTICS AND TRANSCONDUCTANCE OF MODFETs 263
In the velocity-saturation region, the 2-D Poissons equation
has to be solved in the AlGaN layer near the drain end of the
channel [11]. The onset of the velocity saturation is where the
longitudinal electric eld reaches E
T
.
V (L
1
, 0)
x
= E
T
. (5)
We have considered the difference between the Fermi level
and the bottom of the conduction band in GaN where we have
dened the origin of the potential
V (x, d) = V
gs

B
E
F
. (6)
We also take into account the polarization effect at the AlGaN/
GaN interface. The polarization charge is assumed to be a thin
charge layer [12] at the heterojunction
V (x, 0)
y
=
q

(n
sat
) (7)
where n
sat
is the channel sheet charge density at S point. The
Poissons equation at x = L
1
is

2
V (L
1
, y)
y
2
=
q

N
D
(y) (8)
where
N
d
(y) =
_
0, d
i
y 0
N
D
, d
i
d
d
y < d
i
is the doping concentration. We integrate (8) from the
heterojunction (y = 0) to any point in the AlGaN layer
V (L
1
, y)
y

V (L
1
, 0)
y
=
q

y
_
0
N
D
(y)dy. (9)
Equation (7) is then substituted into (9), and the integration is
performed from the gate (y = d) to any point in the AlGaN
layer, and further (5) is used
V (L
1
, y) = V
gs

B
E
F

q

(n
sat
)(y +d)

y
_
d
dy
y
_
0
N
d
(y)dy. (10)
Equations (5)(7), and (10) are introduced as the boundary
conditions for the 2-D Poisons equation.
The boundary conditions are not well posed, and the solution
of the 2-D Poissons equation cannot be determined uniquely
unless we can accurately describe the potential or the electric
eld of the AlGaN layer at the drain end (x = L), which
is very difcult. Here, we introduce the eigenvalue p of the
system as an adjustable factor to determine the solution and
describe the dependence of n
s
on the drain-to-source bias in
saturation. We dene V
th
= V
o
+E
F
, V
gt
= V
gs
V
th
, and
Fig. 3. Calculated electron drift velocity versus applied electric eld for a
GaN system, in which V
sat
= 1.27 10
7
cm/s, E
c
= 172 kV/cm, and
0
=
684 cm
2
/(V s), and we suppose that a = 3.24.
the channel potential and eld in the velocity-saturation region
can be expressed as
V (x) =V
gt

qd

n
sat
+pE
T
sinh
_
x L
1
p
_
(11)
E(x) =E
T
cosh
_
x L
1
p
_
. (12)
The eigenvalue that controls the 2-D system depends on the
boundary, and the adjustability is due to the uncertainty of
the boundary conditions at the drain end. The variation of the
eigenvalue reveals indirectly the variation of the 2-DEG in
the velocity-saturation region. This method is applicable to
the parameter-extraction methodology and is easy to be imple-
mented in the circuit simulators. Similar methods had been
used in the models for the Si-MOSFETs before, e.g., in [16].
B. Mobility Model
We have developed a eld-dependent MPS mobility model
for the AlGaN/GaN MODFETs based on the model developed
by Schwierz [17].
(E) =

0
E +
sat
_
E
E
T
_
4
1 +
_
E
E
T
_
4
+a
_
E
E
T
_
(13)
where (E) and E are the drift velocity and the electric eld
along the channel, respectively.
0
, E
T
,
sat
are the low-
eld mobility, the critical eld, and the saturation velocity,
and a is an adjustable parameter which models the velocity
overshoot effect. The relationship between the drift velocity and
the electric eld in (13) for a GaN system has been calculated
and compared with the Monte Carlo simulation [18], and the
conventional Canali model [19], which is widely used for
silicon devices, is shown in Fig. 3. It can be observed that the
MPS model is able to depict the negative differential mobility
264 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 1, JANUARY 2008
accurately and provides a better t of drift velocity than the
Canali model in the high-eld region.
Dang et al. [20] observed a nonmonotonic dependence of
the carrier velocity on the electric eld perpendicular to the
channel in the AlGaN/GaN system. We have developed a phe-
nomenological model for the low longitudinal-eld mobility
0
to describe the dependence of the carrier velocity on the applied
gate-to-source bias.

0
=
p
1
p
2
+ (V
gs
+p
3
)
2
(14)
where p
1
, p
2
, and p
3
are the undetermined coefcients, which
can be extracted from the experimental data.
C. IV Characteristics
The drain drift current can be described as [21]
I = wq(x)n
s
(x) (15)
where w is the gate width. In the linear region, the sheet charge
density is given as
n
s
=

qd
(V
gs
V
th
V (x)) (16)
where V (x) is the potential at arbitrary point in the channel. By
substituting (13) and (16) into (15) using e(x) = (E(x)/E
T
),
b = (
sat
/
0
E
T
), and = (w
0
/d), we obtain
I
E
T

1 +ae +e
4
e +be
4
= V
gt
V. (17)
We divide both sides of the equation by e
2
and integrate them
with respect to the variable e along the channel from the source
(x = 0) to any point in the channel. Notice that the current
remains constant along the channel; thus, we obtain
I
E
T

e(x)
_
e(0)
1 +ae +e
4
e
2
(e +be
4
)
de =
e(x)
_
e(0)
V
gt
V
e
2
de. (18)
We assume F(e) =
_
((1 +ae +e
4
)/(e
2
(e +be
4
)))de. As
an integral of rational fraction, F(e) can be determined
analytically.
F(e) =
1
6
_

3
e
2

6a
e
+ 2

3P
1
tan
1
_
1 2ce

3
_
2P
2
ln(1 +ce) +P
2
ln(1 ce +c
2
e
2
)
_
(19)
where c = b
1/3
, P
1
= ((1 +ab +b
4/3
)/b
2/3
), and P
2
=
((1 ab +b
4/3
)/b
2/3
).
We simplify (19) by neglecting the product ce, and the error
is acceptably small (less than 4%)
F(e) =
1
6
_

3
e
2

6a
e
+ 2

6
P
1
_
. (20)
On the right side of (18), proper variable substitutions are
introduced. Notice that dV/dx = E
T
e, and we obtain the
results as follows:
I (F (e(x))F (e(0)))
Ec
=
V
gt
V (0)
e(0)

V
gt
V (x)
e(x)
E
T
x.
(21)
Assume that e
0
= e(0), e
L
= e(L), V
0
= V (0), and V
L
=
V (L). Rd and Rs are the parasitic drain and source resistances,
respectively. The onset of saturation is marked by the channel
electric eld approaching the critical eld E
T
when the drain
bias reaches the saturation value V
dsat
. Using V
0
= IRs at
x = 0 and e
L
= 1 at x = L in (17) and (21), we obtain I
sat
and e
0sat
at the onset of the saturation. Furthermore, we get the
saturation value of the drain-to-source voltage V
dsat
.
In the low-eld region when V
ds
< V
dsat
, by substituting
V
0
= IRs at x = 0 and V
L
= V
ds
IRd at x = L into (17)
and (21), we acquire
_

_
I
E
T
_
1 +ae
0
+e
4
0
_
=
_
e
0
+be
4
0
_
(V
gt
IRs)
I
E
T
_
1 +ae
L
+e
4
L
_
=
_
e
L
+be
4
L
_
(V
gt
V
ds
+IRd)
I
E
T
_
e
L
2e
0

e
0
2e
L
+a(e
L
e
0
)
_
= V
gt
(e
L
e
0
) +e
0
(V
ds
IRd) e
L
IRs e
0
e
L
E
T
L.
(22)
By solving (22), we obtain the current in the linear region, as
well as the electric eld at the source and the drain ends of the
channel.
In the velocity-saturation region when V
ds
> V
dsat
, by sub-
stituting V
0
= IRs at x = 0, e
L1
= 1 at x = L
1
, and V
L
=
V
ds
IRd at x = L into (17) and (21) using (11) and (12),
we acquire
_

_
I
E
T
_
1 +ae
0
+e
4
0
_
=
_
e
0
+be
4
0
_
(V
gt
IRs)
I
E
T
(2 +a) = (1 +b)(V
gt
V
L1
)
I
E
T
_
1
2e
0

e
0
2
+a(1 e
0
)
_
= V
gt
(1 e
0
) +e
0
V
L1
IRs e
0
E
T
L
1
V
L1
+pE
T
sinh
_
LL
1
p
_
= V
ds
IRd.
(23)
By solving (21), we obtain the current in the velocity-saturation
region.
D. Transconductance and Output Conductance
By differentiating (22) and (23) with respect to the gate-
to-source bias, we can obtain a set of linear equations. By
solving these equations, we can acquire the transconductance
g
m
. Notice that b, , and V
th
are related to the gate-to-source
bias. The g
m
is mainly dependent on the applied gate-to-
source bias, and the peak value can be calculated and compared
with the measured data. Also, by differentiating (22) and (23)
with respect to the drain-to-source bias, we obtain another
set of linear equations, and the output conductance g
d
can be
acquired. The g
d
decreases monotonically with the increasing
drain bias and gradually becomes saturated.
It should be mentioned that the continuity of the model,
which is important for the calculation speed and convergence,
LI AND WANG: MODEL FOR CURRENTVOLTAGE CHARACTERISTICS AND TRANSCONDUCTANCE OF MODFETs 265
TABLE II
PARAMETERS USED IN THE CALCULATION FOR DIFFERENT
AL FRACTIONS OF Al
x
Ga
1x
N/GaN
may be impacted when several approximations are adopted.
Appropriate corrections for the model are necessary to keep
smooth connections of variables at the transition of different
operation regions. In our model, we seek a polynomial function
in the low longitudinal-eld region and an exponential function
in the velocity-saturation region. The modications are bias-
dependent, multiplying the original calculated drain current.
Then, the current has a second-order continuity which means
that the derivatives of the output conductance and transcon-
ductance are continuous. We must mention that, although the
continuity has been improved, the numerical change of the
results is small (maximum < 2%), which helps keep the good
accuracy of the model.
III. RESULT AND DISCUSSION
To validate our model, we have it implemented in the
HSPICE circuit simulator and simulated for the IV char-
acteristics and the transconductance under various gate and
drain biases. Comparative experimental results from MODFET
devices of two different Al mole fractions are chosen:
Al
0.15
Ga
0.85
N/GaN [22] and Al
0.50
Ga
0.50
N/GaN [23]. We also
compare our calculation with the numerical model presented
in [24]. The parameters used in the model are compiled in
Table II.
The variation of drain current I
ds
with drain-to-source
voltage V
ds
for an Al
0.15
Ga
0.85
N/GaN MODFET is plotted
along with the experimental measurements [22] and the results
from [24] in Fig. 4. In the velocity-saturation region under
high gate biases, our simulation shows closer results to the
measurement data than those in [24] since the 2-D analysis
in the saturation region predicts the current more accurately.
In the area near the knee point, our calculation provides a
smooth connection and more accurate descriptions, which can
be attributed to the good continuity of the charge-control
models between the low-eld and saturation regions after
corrections.
Fig. 4. Calculated and measured IV characteristics for an Al
0.15
Ga
0.85
N/
GaN MODFET. The gate-to-source bias is swept from 1 to 2 V at a step of
1 V. Our results (solid line) are compared with the counterparts extracted from
the model of Asgari et al. [24] (dash line) and experimental data [22] (symbol).
Fig. 5. Calculated and measured dc transfer characteristics for an
Al
0.15
Ga
0.85
N/GaN MODFET. The gate-to-source bias is swept from 3 to
2 V, and the drain-to-source bias is 5 V.
The dc transfer characteristics including the transconduc-
tance are shown in Fig. 5. In our calculation, the peak transcon-
ductance of 161 mS/mm is obtained at V
gs
= 0.6 V, which
is comparable with the measurements of 157 mS/mm at V
gs
=
0.9 V when V
ds
= 5 V. A good agreement between our calcu-
lation and the experimental data is obtained over the full range
of applied gate bias. Particularly, our results present an accurate
description for the transconductance without glitches, which is
difcult to achieve for other analytical or numerical models
[10], [11], [24]. When the applied gate-to-source voltage is
very low, there is a little discrepancy of the transconductance
between our model and the experimental data, which is due to
the error from the phenomenological model for the low-eld
mobility. Also, under very low gate biases, the drain current of
our model is a little higher than the measured data, which may
come from the error of the calculated threshold voltage. The
reason can be that the approximation of the full depletion is
introduced to obtain the threshold voltage, which assumes that
there is no free charge in the spacer layer and that the donors in
the n-AlGaN layer have been totally ionized.
A further comparison to the experimental results can be
obtained by analyzing an Al
0.50
Ga
0.50
N/GaN MODFET. The
266 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 1, JANUARY 2008
Fig. 6. Calculated and measured currentvoltage characteristics for an
Al
0.50
Ga
0.50
N/GaN MODFET. The gate-to-source bias is swept from 2 to
3 V at a step of 1 V. Our results (solid line) are compared with the model
of Asgari et al. [24] (dash line) and experimental data [23] (symbol).
Fig. 7. Calculated and measured dc transfer characteristics for an
Al
0.50
Ga
0.50
N/GaN MODFET. The gate-to-source bias is swept from 4 to
3 V, and the drain-to-source bias V
ds
is 5 V.
calculated output and dc transfer characteristics along with
the experimental measurements [23] are shown in Figs. 6
and 7, respectively. The peak transconductance of 223 mS/mm
is obtained at V
gs
= 1 V which is comparable with the mea-
surements of 226 mS/mm at V
gs
= 0.8 V when V
ds
= 5 V.
Introducing an adjustable factor of eigenvalue to the 2-Dsystem
helps predict the saturation current more accurately. A better
agreement of the transconductance with the experiments can
be found than those obtained from the model in [24]. In the
low-eld region of the AlGaN layer, the Poissons equation has
been simplied to a quasi-1-D form when assuming that the
change of the horizontal electric eld is much slower than that
of the perpendicular eld. Such approximation may inuence
the accuracy of the model and cause discrepancy of the current
in the deep linear region, where the applied drain-to-source bias
is very low.
We have compared our model with the BSIM4 Level 54,
one of the mainstream commercial numerical models, in a dc
analysis to check the speed of our model. The CPU of the
computer is Pentium 2.8 GHz. A sweep of 25 000 dc operation
points has been undertaken for both the models. It spent 2.14 s
to complete the sweep for our model, and BSIM4 Level 54 cost
2.09 s under the equivalent condition. Therefore, we conclude
that the calculation speed of our model in the dc analysis is
acceptable.
IV. CONCLUSION
An analytical model has been developed for the IV char-
acteristics of AlGaN/GaN MODFETs. We have made mod-
ications for the conventional charge-control model in both
the low longitudinal-eld and velocity-saturation regions. In
the low-eld region, the inltration of 2-DEG wave function
from the GaN channel to the spacer layer is considered, and
the Robin condition is applied to determine the Fermi level
and sheet carrier density more accurately. In the velocity-
saturation region, the variation of the carrier concentration with
respect to the drain-to-source bias is taken into account by
introducing an adjustable eigenvalue during the solution of the
2-D Poissons equation. An empirical eld-dependent mobility
model has been incorporated, in which a phenomenological
low-eld mobility model is developed to describe the effect
of perpendicular electric eld. Nonlinear polarization effects
and parasitic resistance in source and drain regions are all
considered in the model.
The model has been veried by two AlGaN/GaN MODFETs
with different Al mole fractions. The calculated IV and dc
characteristics for both devices are in excellent agreement with
the experimental data over the full range of applied gate and
drain biases, and the predictions of the transconductance, the
knee point, and the velocity-saturation region are accurate. The
model preserves a second-order continuity of the drain current,
which provides a good convergence in the calculation. Being
implemented in the circuit simulator, the model has functioned
in an acceptable speed and stability. It is concluded that the
model can be utilized reliably when predicting device behavior
in circuit designs.
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Miao Li received the B.S. degree in electronic en-
gineering from Tsinghua University, Beijing, China,
in 2006.
Since September 2006, he has been with the
Institute of Microelectronics, Tsinghua University,
Beijing, China. His research focuses on modeling
of IIIV compound semiconductor materials and
devices.
Yan Wang received the B.S. and M.S. degrees
in electrical engineering from Xian Jiaotong Uni-
versity, Xian, China, in 1988 and 1991, respec-
tively, and the Ph.D. degree in semiconductor
device and physics from the Institute of Semiconduc-
tors, Chinese Academy of Science, Beijing, China,
in 1995.
Since 1999, she has been a Professor with the
Institute of Microelectronics, Tsinghua University,
Beijing, China. Her research centers on device
modeling.