AO4488 N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4488/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4488 and AO4488L are electrically identical. -RoHS Compliant -AO4488L is Halogen Free

Features
VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6m (VGS = 10V) RDS(ON) < 6.4m (VGS = 4.5V)

S S S G

D D D D G

SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation
A G B

Units V V

TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG TA=25C TA=70C

20 17 80 50 375 3.1 2.0 -55 to 150

15 12 A

mJ 1.7 1.1 W C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady State Steady State RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

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AO4488

Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID = 250A, VGS = 0V VDS = 30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 16V VDS = VGS ID = 250A VGS = 10V, VDS = 5V VGS = 10V, ID = 20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = 4.5V, ID = 18A Forward Transconductance VDS = 5V, ID = 20A IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1.0 80 3.8 5.3 5.2 72 0.69 1 3 5450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 760 540 1 84 VGS=10V, VDS=15V, ID=20A 42 12 21 13 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s
2

Min 30

Typ

Max

Units V

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

1 5 10 1.7 3 4.6 6.5 6.4 S V A pF pF pF 1.5 112 56 nC nC nC nC ns ns ns ns 56 ns nC m V A A

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

6800

SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

9.8 49 16 42 31

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA 0 curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev1: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4488

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 70 60 50 ID (A) ID(A) 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 6 Normalized On-Resistance 5.5 RDS(ON) (m) 5 4.5 4 3.5 3 0 4 8 12 16 20 s IF =-6.5A, dI/dt=100A/ ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS= 10V VGS= 4.5V 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID= 20A 1E+00 1E-01 IS (A) VGS= 10V ID= 20A 3V VGS= 2.5V 0 0 1 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics 4V 10V 4.5V 3.5V 20 15 10 5 25C 25 30 VDS= 5V 125C

-40C

VGS= 4.5V ID= 18A

16 14 12 RDS(ON) (m) 10

125C 1E-02 8 25C 125C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1E-03 6 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF4 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 25C TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 -40C 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 1E-06 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2 -40C

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4488

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 7: Gate-Charge Characteristics VDS= 15V ID= 20A 10000

8000 Capacitance (pF) Ciss

6000

4000 Coss 2000 Crss 0 5 10 15 20 25 30

VDS (Volts) Figure 8: Capacitance Characteristics

100 RDS(ON) limited 10s 100s 1ms 10ms 100ms 0.1 TJ(Max)=150C TA=25C 10s DC

1000
TJ(Max)=150C TA=25C

10 ID (Amps)

Power (W)

100

10

0.01 0.01

0.1

F 1 VDS (Volts)

I =-6.5A, dI/dt=100A/ s 10 100

1 1E-04 0.001 0.01

0.1

10

100

1000

Figure 9: Maximum Forward Biased Safe Operating Area (Note E)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=59C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com