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H.Q.
Portillo
Engineering
of
Utah
3 "1 + qre+'+
cu++
+ 5Fe** + zso
the formation of an intermediate AgrS film which forms on the CuFeS, surface by an exchang reaction. Under these conditlons, unlike the uncatalysed ferric sulfate leach, the elemental sulfur forms a nonprotective reaction product on the AgrS crystallites. As a
intermediate electrochemical reaction in the Ag,S film rather than by transport through the elemefital
appears
t6
become
lmited by
an
+ 2Fe+3
2Ag+
zFe++
so
The reaction rale wag.found to.[ave a complex dependence on the Ag', Fe'-, and Fe'' concentrations, but independent of the Cu" concentration. Electrochemical neasurenents with a AgrS-coated chalcopyrite electrode provide furtherinforation regarding the nature of the reaction mechanism. The kinetics of the rate limiting, intermediate electrochemical reac-.
equa-
Figure l. SEM photograph of the cross section of a patially leached chalcopyrite particle (10 um) showing the sulfur layer and topochemical nature of the unatalysed ferric sulfate )each. (5)
of the chalcopyrites
In sulfuric acid solutions of ferric sulfate, chalcopyrite dissolves according to the following
reacti
on ,
CuFeSr
+ 4Fe'"
+?
TRANSVAL,SO AFRICA
(l)
r--l
-
Pr lsl'
ausrnlrtr z-t-
more recent results reported by Jones and Peters. (7) The topochemical nature of the leaching reaction is c)ear1y illustrated in Figure I which shows the cross
This reaction stoichiometry has been observed in a number of investigat'ions. (l-5) Exceptions to this consensus are the early work of Sullivan (6) and the
=:--
-4{-=-
section
details of rate control for this particula been well established. Some investigators (1,7) attribute rate control to a surface reaction. 0ther investigators (2-5,8,9) report that the reaction rate is limited by transport in the chalcopyrite lattice or through the elementa'l sulfur reaction product layer, Differences in leaching behavior reported in the literature (5) may be ue to variations in the intrinsic electrochemical properties
The
The formation of an elemental sulfur layer on the chalcopyrite surface may significantly influence the reaction kinetics by establishing a diffusion barrier.
to-5
rda
Figure
25"C. (ro)
2.
H2SO4,
30 nv/ninl
for
CuFeS^ from