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+ + + =
5
0
5
4
0
4
3
0
3
2
0
2
0
0
5 4 3 2
) ln(
I
x
I
x
I
x
I
x
I
x
I M V
Where x represents the AC or incremental current about DC bias of
0
I
Normalize by deleting the DC term and multiplying by
M
I
0
+ + =
4
0
5
3
0
4
2
0
3
0
2
5 4 3 2 I
x
I
x
I
x
I
x
x y
Where y represents the AC voltage caused by AC current x.
First, consider the transfer function which contains only the 2
nd
and 3
rd
order nonlinearities:
2
0
3
0
2
3 2 I
x
I
x
x y + =
5
Surprisingly, the coefficients of the 2
nd
and 3
rd
nonlinearities for this ideal diode exactly satisfy
the special coefficient relationship (see Fact 5):
0
2
0
2
1
3
1
866 .
I I
=
This special coefficient relationship of the transfer function means that a short-circuit at the base-
band frequencies will exactly cancel the close-in third-order intermodulation products. This
implies that, no matter how large the magnitude of the output signal, there will be no close-in
third-order intermodulation products. In reality, the signal magnitude cannot be raised without
limit because eventually the fifth-order and other intermodulation products will create unwanted
close-in products, and further, the series expansion above does not converge for x>I
0
. Of
course these are idealized results, but they suggest tantalizing prospects.
Different Diode Results
The very good transfer function obtained above is for the voltage across a current-fed diode;
however the transfer function for the current through a voltage-fed diode is quite different and
very enlightening. For the transfer function of the current-fed diode above, y represented the
voltage and x represented the current fed into the diode. Its easy to recast the transfer function
for a voltage-fed diode by performing a reversion of the series. The result is:
2
3 2
6 2
o o
I
y
I
y
y x + + =
Here x represents the current through the diode when a voltage y is placed across the diode.
(This might represent the situation of driving the base-emitter junction of a bipolar transistor.)
First, note that the 2
nd
- and 3
rd
-order coefficients no longer satisfy the ideal relationship of Fact
5 because the 2
nd
-order coefficient is about 2 too large. Since this is a voltage-fed nonlinear
device, the normal baseband shunt short circuit must be replaced by a baseband open circuit in
series with this diode. As a consequence, one finds that placing a baseband open in series with
this diode does not cancel the close-in 3
rd
-order current products; in fact, they appear to be
unchanged. The reason is that by placing a series open circuit at the baseband, there is so much
over-compensation that the close-in 3
rd
-order current products have reversed phase, but remain at
the same amplitude.
All is not lost however and its still possible to get self-cancellation of the 3
rd
-order products
by using a baseband resistor instead of an open. In fact, for this specific normalized transfer
function, placing a 1 resistor (at the baseband frequency; a short at all higher frequencies) in
series with the diode gives near-perfect close-in 3
rd
-order cancellation while leaving the 2
nd
-order
baseband current component at about half its original amplitude. Its now obvious why the
original open gave too much compensationtwice as much in factwhereas the resistor gives
just the right amount.
Calculating the Optimum Value Baseband Shorting Resistance
6
As shown in the examples above, a baseband shorting resistor of zero ohms may give near-
perfect cancellation of the close-in 3
rd
-order modulation products (the voltage across an ideal
current-fed diode) or may appear to give no benefit at all (the current through an ideal voltage-
fed diode).
There is a simple way to calculate the optimum value of the baseband shorting resistor just by
knowing the nonlinearity coefficients of the normalized transfer function. The nonlinear transfer
function of a candidate RF amplifier can be derived in several ways based on measured data.
But first observe that an amplifier with known coefficients A and B (of a normalized transfer
function), produces close-in 3
rd
-order sidebands of amplitude of .75B and a 2
nd
-order baseband
amplitude of A. So perhaps the easiest way to obtain the coefficients of a candidate amplifier is
to apply two tones of equal amplitude whose frequencies lie at the upper and lower edges of the
RF band. The amplitude of the two tones is increased until the amplitude of the close-in 3
rd
-
order sidebands are high enough to reliably measure. For example, if the 3
rd
-order sidebands are
40 dB down from the in-band tones (that is, their normalized amplitudes are .01 volt), then the
value of B is .0133. At this same setting, suppose the baseband amplitude is measured at 18 dB
down from the in-band tones (that is, its normalized amplitude is .126 volts), the value of A is
also .126. Thus, the normalized transfer function of this candidate amplifier is
y = x .126x
2
+ .0133x
3
Once the normalized values of the nonlinear coefficients are known, the optimum value of the
baseband resistance is:
1
75 .
2
=
B
A
R
For the example amplifier above, the optimum value of baseband resistance is
=
= 59 . 1
) 0133 (. ) 75 (.
126 .
2
R
Note that the formula for the ideal baseband resistance allows for negative resistance,
depending on the values of the nonlinear coefficients.
The FET Amplifier
Of course, a FET amplifier is a three-terminal device quite unlike the two-terminal devices
used as examples above. However, it turns out that the nonlinearities of a FET amplifier are
mostly caused by variations in transconductance due to changes in output voltage (voltage from
drain to source) and by changes in output current (drain current). Experience indicates that
nonlinearities caused by the input are usually much smaller. Because of this, its nonlinear
performance therefore closely resembles a two-terminal device and most of the benefits of output
nonlinearity reduction are realized by placing a baseband short (or resistance) on the output.
Conclusions
7
The examples above have used only two frequencies, F
1
& F
2,
to demonstrate the inter-
relationship between the 2
nd
-order and 3
rd
-order distortion products because, even with this
simplification, the math is quite tedious. However, through the use of SPICE simulations, the
conclusions above apply equally well to any number of discrete frequency components in the
narrow-band RF signal. By understanding the fundamental nature of this self-cancellation
scheme, other potential prospects suggest themselves:
1. The 2
nd
- & 3
rd
-order coefficients of the real-world transfer function may be such that a
direct baseband short on the output of an amplifier is not optimum. That is, perhaps a low-
value (non-zero) baseband resistance would be better.
2. On the other hand, a low-value but negative baseband resistance might give better harmonic
cancellation results.
3. Since different biasing points give different nonlinearity coefficients, the most optimum
bias point for minimum distortion without baseband correction may not be the best bias
when using baseband correction. That is, when using baseband correction, there may be a
slightly better bias point to give the lowest overall distortion.
4. If a single-stage amplifier has a nearly 180-degree phase shift from input to output, then
perhaps an appropriate resistive baseband feedback from output to input might be able to
cancel most of the distortions caused by both input and output nonlinearities. Of course, if
the phase shift is significantly different than 180 degrees, the feedback impedance and
phase would have to compensate.
5. The examples (above) of nonlinearities in the ideal diode might be used for handling the
nonlinearities of the base-emitter junction of a bipolar transistor amplifier.
Keep in mind that this baseband cancellation scheme works best for gentle nonlinearities
(the diode examples above are gentle); that is, there are no abrupt changes in the transfer
function such as saturation or cutoff. Abrupt changes quickly bring about much larger 5
th
- and
higher-order odd harmonic nonlinearities which not only generate additional close-in sidebands,
but they also cannot be cancelled by a baseband short. This just reflects practical experience that
once an amplifier reaches abrupt limits, you cannot get any more output power. But, even if this
amplifier is operating near some abrupt limit, the 3
rd
-order sidebands can still be attenuated with
baseband shorting. However, beyond a certain amount of 3
rd
-order attenuation, the 5
th
& 7
th
close-in intermodulation products will then be the dominant sidebands.
This analysis also does not include the effects of small phase shifts which may be present in
the transfer function of real amplifiers. This implies that a bit more improvement in linearity
might be gained by introducing a small amount of reactive impedance in the baseband shorting
resistance. Despite this possible phase shift, this analysis gives the bulk of the improvement.
About the Author
Cecil W. Deisch received his MSEE degree from New York University and has spent most of his
career at AT&T Bell Labs, concentrating mostly on magnetics and analog circuit design. In
addition to being awarded several patents, he has published many technical papers in various
branches of electrical engineering and is an AT&T fellow. During his career, he has designed
8
circuits covering the frequency range from 20 Hz (telephone ringing voltage) to 1 GHz. He now
works for Tellabs, where he developed this new low loss coupler configuration.