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NPN
Complementary Silicon 2N3055A
High-Power Transistors MJ15015 *
. . . PowerBase complementary transistors designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
MJ2955A
solenoid drivers, dc–to–dc converters, inverters, or for inductive loads PNP
requiring higher safe operating area than the 2N3055 and MJ2955. MJ15016 *
• Current–Gain — Bandwidth–Product @ IC = 1.0 Adc
fT = 0.8 MHz (Min) – NPN *ON Semiconductor Preferred Device
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SILICON
*MAXIMUM RATINGS POWER TRANSISTORS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol
2N3055A
MJ2955A
MJ15015
MJ15016 Unit
60, 120 VOLTS
115, 180 WATTS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎ
Collector–Base Voltage
VCEO
VCBO
60
100
120
200
Vdc
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage Base
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Reversed Biased
VCEV 100 200 Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous
VEBO
IC
7.0
15
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
TO–204AA
Base Current IB 7.0 Adc (TO–3)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Device Dissipation @ TC = 25C
Derate above 25C
PD 115
0.65
180
1.03
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
TJ, Tstg –65 to +200 C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Max Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.52 0.98 C/W
*Indicates JEDEC Registered Data. (2N3055A)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
200
MJ15015
MJ15016
100
50 2N3055A
MJ2955A
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
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2
2N3055A MJ15015 MJ2955A MJ15016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
OFF CHARACTERISTICS (1)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
*Collector–Emitter Sustaining Voltage 2N3055A, MJ2955A VCEO(sus) 60 — Vdc
(IC = 200 mAdc, IB = 0) MJ15015, MJ15016 120 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A, MJ2955A
ICEO
— 0.7
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016 — 0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
*Collector Cutoff Current 2N3055A, MJ2955A ICEV — 5.0 mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016 — 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A, MJ2955A
ICEV
— 30
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
TC = 150C) MJ15015, MJ15016 — 6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Emitter Cutoff Current 2N3055A, MJ2955A IEBO — 5.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016 — 0.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(t = 0.5 s non–repetitive) 2N3055A, MJ2955A 1.95 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
(VCE = 60 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
MJ15015, MJ15016 3.0 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ hFE —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, VCE = 2.0 Vdc) 10 70
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
Collector–Emitter Saturation Voltage
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, IB = 400 mAdc)
VCE(sat)
— 1.1
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 10 Adc, IB = 3.3 Adc) — 3.0
(IC = 15 Adc, IB = 7.0 Adc) — 5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on) 0.7 1.8 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
Current–Gain — Bandwidth Product
ÎÎÎÎ
ÎÎÎÎ
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055A, MJ15015
MJ2955A, MJ15016
fT 0.8
2.2
6.0
18
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob 60 600 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*SWITCHING CHARACTERISTICS (2N3055A only)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RESISTIVE LOAD
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ (VCC = 30 Vdc, IC = 4.0 Adc,
td
tr
—
—
0.5
4.0
µs
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
IB1 = IB2 = 0.4
0 4 Adc,
Adc
Storage Time tp = 25 µs
µ Duty y Cycle
y 2% ts — 3.0 µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
tf — 6.0 µs
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3
2N3055A MJ15015 MJ2955A MJ15016
200 2.8
50 2
-55°C
30 1.6 IC = 1 A 4A 8A
20
VCE = 4.0 V 25°C 1.2
10
7 0.8
5
0.4
3
2 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)
MJ15016
2
2.0
1.5 2N3055A
VBE(sat) @ IC/IB = 10 MJ15015
1
1.0
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0
f,
10
7 VCC = 30 V
5 IC/IB = 10
VCC TJ = 25°C
+30 V 3
2
t, TIME (s)
tr
µ
7.5 Ω
25 µs 1
+13 V SCOPE 0.7
30 Ω
0 0.5
1N6073 0.3
-11 V
0.2
tr, tf ≤ 10 ns td
-5 V
DUTY CYCLE = 1.0% 0.1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)
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4
2N3055A MJ15015 MJ2955A MJ15016
10 400
7 TJ = 25°C
5 2N3055A
3 200 Cib MJ15015
C, CAPACITANCE (pF)
2 ts MJ2955A
MJ15016
t, TIME (s)
µ
tf
0.1 100
0.7
0.5 VCC = 30 50 Cob
IC/IB = 10
0.3 IB1 = IB2
0.2 TJ = 25°C 30
0.1 20
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)
NPN PNP
10,000 1000
VCE = 30 V VCE = 30 V
1000 100
IC, COLLECTOR CURRENT (A)
100 10 TJ = 150°C
TJ = 150°C
10 1.0
100°C 100°C
1.0 0.1 IC = ICES
IC = ICES
REVERSE FORWARD
REVERSE FORWARD
0.1 0.01 25°C
25°C
0.01 0.001
+0.2 +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
20 20
30 µs 0.1ms
IC, COLLECTOR CURRENT (AMPS)
10
IC, COLLECTOR CURRENT (AMP)
10
100 µs 5.0
1 ms 1.0ms
5
2.0
Figure 12. Forward Bias Safe Operating Area Figure 13. Forward Bias Safe Operating Area
2N3055A, MJ2955A MJ15015, MJ15016
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5
2N3055A MJ15015 MJ2955A MJ15016
7There are two limitations on the power handling ability The data of Figures 12 and 13 is based on TC = 25C;
of a transistor: average junction temperature and second TJ(pk) is variable depending on power level. Second
breakdown. Safe Operating area curves indicate IC – VCE breakdown pulse limits are valid for duty cycles to 10% but
limits of the transistor that must be observed for reliable must be derated for temperature according to Figure 1.
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
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6
2N3055A MJ15015 MJ2955A MJ15016
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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7
2N3055A MJ15015 MJ2955A MJ15016
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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8
This datasheet has been download from:
www.datasheetcatalog.com