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in
1
ECE-GATE 2014 Topic Test-EDC

Duration: 90 Minutes Maximum Marks: 50

Read the following papers instructions carefully:

1. There are a total of 33 questions carrying 50 marks. Questions are of multiple choice type or numerical
answer type. A multiple choice type question will have four choices for the answer with only one correct
choice. For numerical answer type questions, the answer is a number and no choices will be given. A
number as the answer should be entered by writing approximate value.

2. Q.1- Q.13 are of multiple choice type and carries 1 mark each. Q.14- Q.16 are of numerical answer type
and carries 1 mark each. Q.17- Q.24 are of multiple choice type and carries 2 marks each. Q.25- Q.29
are of numerical answer type and carries 2 marks each.Q.30-Q.31 include one pair of common data
questions which are of numerical answer type and carries 2 marks each and Q.32-Q.33 include one pair
of linked answer questions which are multiple choice type and carries 2 marks each. The answer to the
second question of the linked answer questions depends on the answer to the first question of the pair. If
the first question in the linked pair is wrongly answered or is not attempted then the answer to the second
question in the pair will not be evaluated.

3. Questions not attempted will result in zero mark. Wrong answers for multiple choice type questions will
result in NEGATIVE marks. For all 1 mark questions, 1/3 mark will be deducted for each wrong
answer. For all 2 marks questions, 2/3 mark will be deducted for each wrong answer. However, in the
case of the linked answer question pair, there will be negative marks only for wrong answer to the first
question and no negative marks for wrong answer to the second question. There is no negative
marking for questions of numerical answer type.

4. Objective questions must be answered on Objective Response Sheet (ORS) by marking (A, B, C, D)
using HB pencil against the question number on the left hand side of the ORS. For Numeric data
questions answer must be marked in form of numerical value only. Each question has only one correct
answer. In case you wish to change an answer, erase the old answer completely. More than one answer
marked against a question will be treated as a wrong answer.


5. Calculator is allowed. Charts, graph sheets or tables are NOT allowed in examination hall

6. Do the rough works in scribble pad provided/ In case of offline it can be done on paper itself?









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2
Q.1. If C
d
and C
S
represent the depletion and diffusion capacitance of a diode respectively then which one
of the following statements are correct.
1. C
d
varies inversely with the depletion width
2. C
s
varies directly with the rate of change of diode current with respect to diode voltage
3. Effective Junction capacitance is the series combination of C
d
and C
S

(A) 1 & 2 are correct (B) 2 & 3 are correct (C) 1 & 3 are correct (D) 1, 2 & 3 are correct
Q.2. Which of the following statement is not correct about GaAs and GaAsP?
(A) GaAs emit light in Infra red region while GaAsP emits light in Visible region
(B) Both GaAs& GaAsP are used as material for LED
(C) GaAs is direct band gap type while GaAsP is indirect band gap type material
(D) Both GaAs and GaAsP are semiconductor material.
Q.3. The reverse saturation current of a Si-based p-n junction diode increases 32 times due to a rise in
ambient temperature. If the original temperature was 40C. What is the final temperature?
(A) 90 C (B) 72 C (C) 45 C (D) 50 C
Q.4. Which of the following parameters of a Silicon Schottky diode is higher than that of a corresponding
PN Junction diode?
(A) Forward voltage drop (B) Reverse Leakage current
(C) Reverse Recovery time (D) Reverse recovery current
Q.5. A hole in a semiconductor has
1. Positive charge equal to the electron charge.
2. Positive mass equal to the mass of the electron.
3. An effective mass greater than the effective mass of electron.
4. Negative mass and positive charge equal to the charge in nucleus.
(A) 1, 2, 3 and 4 (B) 1 and 3 only (C) 2 and 4 only (D) 3 and 4 only
Q.6. When diodes are connected in series to increase voltage rating the Peak Inverse Voltage per junction
(A) Should not exceed half the break down voltage
(B) Should not exceed break down voltage
(C) Should not exceed one third the break down voltage
(D) May be equal or less than break down voltage
Q.7. Light Dependent register is:
1. Photo resistive device
2. Photo voltaic device
3. Photo emissive device
(A) Only 1 (B) both 1 & 2 (C) both 2 & 3 (D) both 1 & 3
Q.8. Consider an N-type Silicon semiconductor if the Electric field intensity applied to material is
increased from 2000V/cm to 8000 V/cm then the mobility of free electrons shall multiply by a factor
of:
1 1 1
( ) ( ) ( ) ( )2
2 4 2
A B C D
Q.9. Which of the following statement is not correct?



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3
3v
1KO
I
C
I
B
(A) In a P
+
N Junction under reverse bias the magnitude of electric field is always maximum at the
P
+
N Junction.
(B) In a P
+
N Junction under reverse bias the magnitude of depletion layer is more towards P
+
side
(C) In a P
+
N Junction under reverse bias the magnitude of depletion layer is more towards N side
(D) P
+
N Junction diode under reverse bias is not used in Solar cell.
Q.10. A, diode which is in reverse bias at 3 volt, has a junction capacitance of 20 pF when reverse bias is
increased to 24 volt then junction capacitance becomes 8 pF. The doping profile and contact
potential are:
(A) Linear graded V
0
= 1 volt (B) Linear graded V
0
= 2 volt
(C) Step graded V
0
= 1 volt (D) Step graded V
0
= 1 volt
Q.11. A potential difference of 5, volt is applied across a uniform wire of length 50 meter. Calculate drift
velocity of electrons through the wire. If relaxation time is 10
14
sec.
(A) 0.176 10
3
m/s (B) 0.95 m/s (C) 1.76 10
5
m/s (D) 1.5 10
6
m/s
Q.12. As compared to a Full wave rectifier using 2 diodes the four diode bridge rectifier has the dominant
advantage of:
(A) Higher current carrying capacity (B) Lower Peak Inverse requirement
(C) Lower ripple factor (D) Higher efficiency
Q.13. Which of the followings are true about Hall Coefficient R
H
.
1. R
H
value is zero for intrinsic semiconductor
2. R
H
value is negative for intrinsic semiconductor
3. For Extrinsic semiconductor value of R
H
increase with increase in temperature
4. For Extrinsic semiconductor value of R
H
decrease with increase in temperature
(A) 1&2 (B) 2&3 (C) 1&3 (D) 2&4
Q.14. If Common base DC current gain of a BJT is 0.98 then what is the value of its common collector DC
current gain?
Q.15. If geometric mean of I
DS
and I
DSS
of a N-channel J-FET is unity mA and its pinch-off voltage is -4
volt then what is its trans-conductance gain (g
m
) in mA/volt is?
Q.16. Assuming V
CE set
=0.2V and | = 50, the minimum base current (I
B
) required to drive the transistor in
figure to saturation is: (in Micro Amp)















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4
Q.17. For the transistor shown in figure find the range of V
BB
for transistor to be in active region??
Given | = 100 V
BE
(cut in) = 0.5 volt V
BE
(sat) = 0.8 volt V
CE
(sat) = 0.2 volt







A. V
BB
s 0.5 volt B. 0.5 < V
BB
< 1.76 C. V
BB
> 1.76 D. V
BB
= 1.76
Q.18. An extrinsic semi-conductor sample of cross section A and length L is doped in such a way that
doping concentration varies as N
D
(x) = N
0
exp(-x/L) where N
0
is a constant and assume that mobility
() of Majority carriers remains constant.
What is value of resistance (where q is electron charge)
A.
0
L
(exp( 1) 1)
AqN
B.
0
L
(exp( 1) 1)
AqN
+
C.
0
L
(exp(1) 1)
qN
D.
0
L
AqN

Q.19. The cut-in voltage of both zener diode D
z
and diode D, as shown in figure are 0.7 volt. If break-down
voltage of zener is 3.3 volt and that of Diode D is 50 volt. All other parameters can be assumed to be
same as that of an ideal diode, than value of peak output voltage of are:










A. 3.3 volt in +ve half and 1.4 volt in ve half
B. 4.0 volt in +ve half and 5.0 volt in ve half
C. 3.3 volt in both cycle D. 4.0 volt in both cycle.










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5
v
0
D
1
D
2
2KO
2KO
18KO
v
1
v
2
Q.20. The circuit shown in Figure, best describes as a:
A. Clamper circuit B. Slicer circuit or 2 level clipper
C. Full wave voltage doubler D. Base clipping circuit or bottom clipper






Q.21. In an energy band-diagram of an open circuited P-N, Junction diode, the energy band of N-region
has shifted relative to that of a P-region. (Where V
0
is contact potential)
A. Downward by V
0
B. Downward by qV
0

C. Upward by V
0
D. Upward by qV
0


Q.22. In an Intrinsic S.C. The Fermi-level lies 0.3 electron volt, below the conduction band at 300K. If
temperature is increased to 330K. What is new position of Fermi-level.
A. 0.3 eV below conduction band B. 0.33 eV below conduction band
C. In the Middle of conduction and Valance band.
D. Data is insufficient
Q.23. An ideal Ge P- N, Junction diode at 125C has Rev. saturation current of 30 A, and bias voltage
equal to 0.2 volt. If dynamic resistance in forward direction is R
1
and that in Reverse direction is R
2
,
then what is approx ratio of R
1
& R
2

A. 10
-3
B. 10
-4
C. 10
-5
D. 10
-6

Q.24. For the circuit shown in figure diode cut-in voltage is 0.6 volt and voltage drop across a conducting
diode is 0.7 volt. Calculate value of v
0
if
v
1
= v
2
= 5 volt






A. 4.07 volt B. 2.035 volt C. 8.14 volt D. 3.02 volt
Q.25. An Intrinsic S.C. with energy gap 1ev has a Carrier Concentration N at a temp. of 200 K. If another
intrinsic S.C. has the same value of carrier concentration N at 600K. What is the energy gap value in
eV for the second Semi-conductor?
Q.26. In a uniformly doped Si-junction for zero-bias, if 80% of total space charge region is to be in N
region then what is the value of equilibrium potential in mV at T = 300K. If it is given that majority
carrier in P- region is 1.5 10
10
/cm
3
.
Q.27. Electrons in an N-Type Ge have a Mobility of 0.36 m
2
V
-1
sec
-1
at room temperature,



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6
P
+
N
x 0 L
p(x)
p(0)
x
L 0
If effective mass of an electron in the conduction band is
1
4
m
0
, where m
0
is the mass of electron.
Then calculate the time in pico second between collisions with the lattice??
Q.28. Consider a Common-emitter circuit using BJT having I
0
= 10
-15
Amphas collector resistance 6.8 KO
and V
CC
= 10 volt. If I
C
= 1 mA, then what is the value of output in volt for an input sine wave signal
of 5 mV peak amplitude??
Q.29. A P
+
- N Junction has a built in potential of 0.8 volt, if depletion layer width at a R. bias of 1.2 volt
is 2 m. For a Reverse bias of 7.2 volt the width of depletion layer in micro meter will be??
Common data for questions 30&31:
The given Si transistor is biased by fixed-bias circuit, as shown in figure it is given that
V
CE
=8V and I
C
= 4 mA






Q.30. If value of | is 100, then what is the value of R
B
in Kilo ohm?
Q.31. If value of | is decreased to 40, then what will be the percentage reduction in I
C
??
Data for linked questions (32 33)
The current I in a forward P
+
N junction shown in figure is entirely due to diffusion of holes from x = 0 to
x = L. If injected hole concentration distribution in N-region is linear and shown in figure (b) with p(0) =
10
12
/cm
3
and L = 10
3
cm.






32. Calculate current density in diode assuming that diffusion constant of hole is 12 cm
2
/sec.
(a) 2.8 mA/cm
2
(b) 5.6 mA/cm
2
(c) 1.9 mA/cm
2
(d) 9.5 mA/cm
2

33. Calculate velocity of holes in n-region at x = 0.
(a) 235 cm/sec (b) 361.5 cm/sec (c) 503.9 cm/sec (d) 461.5 cm/sec











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7
Metal N-Type
ECE-GATE 2014 Topic Test-EDC solution

1. (A) Diffusion capacitance occurs in case of F. bias,
s
dQ dI
C .
dV dV
= = t
So here
s
T
.I
C
V
t
=
q

Depletion capacitance occurs in case of R. bias
d
A
C
c
=
e

where
j
a d
2 V
1 1
q N N
c | |
e= +
|
\ .

1/2
d j
C dV

Total capacitance is sum of diffusion & depletion capacitance.
C
Total
= C
diffusion
+ C
depletion

So total capacitance is parallel combination of both diffusion & depletion and not series.
2. (C) GaAS is a direct band gap type S.C, which emits light in IR region.
GaASP is also a direct band gap type S.C. which emits light in Visible region.
For LED S.C. material used must be Direct Band gap type only.
Gama-rays: 0.01nm <
X-rays: 0.01nm 10nm < <
UV-rays : 10nm 380nm < <
Visible rays: 380nm 700nm < <
IR: 700n 1 m < <
Si & Ge also emit small amount of light in IR, region.
ZnS emit light in U.V. region.
3. (A) ( ) ( )
2 1
0 2 0 1
T T
I T I T 2
10

=
2 1 2
T T 50 T 50 40 90 C = = + =
4. (B)
Silicon schottky diode is a Metal-S.C. Jn diode
In which metal may be Gold or Platinum.
Here Metal is at anode and S.C. is at cathode.



In F. bias Metal is at +ve potential and S.C. is at ve potential.
In R. bias metal is at ve potential and S.C. is at +ve potential.
In F. bias there is no formation of depletion layer and movement of es will occur easily i.e. why it is called
a Hot carrier diode.
In R. bias it is assumed that barrier height is much larger than KT so transportation of es occur over the
barrier by Thermionic emission.



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8
S.C.
+
+
P
+
N
+
+
++
Here equation is
a
ST
eV
J J exp 1
KT
( | |
=
| (
\ .

Where
*
2
ST
q bn
J AT exp
KT
| | |
=
|
\ .

A
*
is effective Richardson constant.
No depletion layer is formed, so cut in voltage will be very small. Here reverse current is due to thermionic
emission so value of rev. current will have higher value
In Schottky P-N Jn diode cut in voltage: 0.2 1 volt
In Normal P-N Jn diode cut in voltage: 0.15 0.5v
5. (B) Charge on hole is +ve and has magnitude equal to electron charge.
Effective mass of hole is greater than effective mass of electron.

( )
* *
n p *
n p
e
m m
m
t
= <
>

6. (C) It is decided by practical values.
7. (A) LDR is a photo resistive device.
when sufficient light falls upon a S.C. then



New covalent bonds are broken
( ) ( ) ( )
R o | + +
So in case of LDR by falling Light
( )
R +
Solar cell is an example of photo voltaic device.
LED/LASER diode is an example of photo-emissive device.
8. (A)
3
E 10 V/cm Const. <

3 4 1/2
10 V/ cm E 10 V/ cm E

< <

4 1
E 10 V/ cm E

>
This given range of electric field comes in second category.
So
1 2
2 1
E 4
E 1

= =

1
2
2

=

9. (B)






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9
+ +
+ +
+
+
+
+
+
+
Step graded junction Linear graded junction

Electric field is always max
m
t Jn of a diode. It may be P-N, Jn or P
+
N Junction.
If doping is (|) on one side then depletion layer will be shifted on opposite side.
In P N
+
, doping will be higher on P-side, so magnitude of depletion layer will be more in N-side.
10. (C)






For step graded:
R O
W V V o +
( )
1/ 2
R O
C V V

o +
For linear graded ( )
1/3
R O
W V V o +
( )
1/3
R O
C V V

o +
For Step-graded:
2
1
R O
1
2 R O
V V
C
C V V
+
=
+

O
O
O
24 V 20
V 1volt
8 3 V
+
= =
+

11. (A)
drift *
e V
V E .
m
t | |
= =
|
\ .

19
14
drift * 31
3
drift
e V 1.6 10 5
V . 10
m 9 10 50
1.6
V 10 m/ sec
9

t | | | |
= =
| |

\ . \ .
=

12. (B) Full wave Rectifier using 2 diode has PIV = 2V
m

Full wave rectifier using 4 diode has PIV = V
m

13. (D) Hall Effect is same as for intrinsic or N-Type S.C. R
H
value is negative for intrinsic S.C.
( ) ( )
( ) ( )
H
R if T
if T

= | +
o
| o |

So
( )
H
R + in extrinsic S.C. if
( )
T |
14. Answer is: 50
I
For CB, A = o



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10
I
I
For CE, A
For CC, A 1
= |
= +|

0.98 49 o = | =
So ( )
I
A CC 1 1 49 50 = +| = + =
15. Answer is: 0.5
16. Answer is: 56
c
B
I
I >
|

c
I 3 0.2 2.8
mA 56 A
50 1 50

= = =
|

17. B. For cut-off, V
BE
(cut-in) = 0.5 volt
For cut-off V
BB
< 0.5 volt
For Saturation, I
B
>
c
I
|

So
0.8 5 0.2
100 5 100
BB
V
>

V
BB
0.8 > 0.96 V
BB
> 1.76
So For Active 0.5 < V
BB
< 1.76
18. B R
A

=

1
. . dR dx dx
A nq A

= =
Because
0
exp( / ) n N x L =
0 0 0
1
. exp( / )
R L
dR x L dx
q AN
=
} }


0
1.
(exp(1) 1)
L
R
Aq N
=
19. B In +ve half D
z
will be in break down and Diode D will be ON
SO v
0
= V
D
+ V
z
= 0.7 + 3.3 = 4.0 volt
In ve half D will be OFF, SO
v
0
(Peak) =
10
1 5.0 volt
2
=
20. C A voltage doubler consists of 2 diode and 2 capacitors.

21. B







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11

To maintain Fermi level this level always
go down.

22. B Just use formula for position of Fermi level .
or use concept that Fermi level position in extrinsic semiconductor shifts towards centre.

23.C r
d
(F.bias) = 3.36 O
r
d
(R.bias) = 0.336 MO
24. A
0 0 0
4.3 4.3
2 2 18
v v v
+ =

0
0
0
4.3
18
4.07volt
v
v
v
=
=


25. Answer: 3eV

( / ) 2 3
0
G
E KT
i
n AT e

=
Acc. To condition

1
G
G 1 2
E
E / KT KT 3 3
1 2
T .e = T .e
E
G
= 1ev, T
1
= 200 K T
2
= 600 K
By calculation,
1
3
G
E ev =

N
a
-
N
d
+

26. Answer: 36mV
x
p0
+ x
n0
= e
But x
n0
= 0.8 e
So x
p0
= 0.2 e
But x
p0
.
( )
0
N . N N 4N
a n d a d
x
+ +
= =
x
p0
0 x
n0
But
+
a d
0 2
N N KT
V
i
n
q n

| |
=
|
\ .

27. Answer: 0.5

0
since m =
4
m e
m
t
=
0.36 =
19
31
1.6 10 4
9.1 10
t

12
9.1 0.36
10
6.4
0.5psec
t
t

=
=

28. Answer: 1.36


P
-
-
-
-
+
+
+
+


N



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12
1
CC CE
C
C
V V
I mA
R

= =
10 -V
CE
= 6.8 V
CE
= 3.2 volt

0 0
0
10 3.2
5
6.8 5
1.36
25
CC CE
i T T
v V V v
v V V mv
So v volt

= = =

= =

29. Answer: 4

( ) J 0
V V +

1
2 2
1.2 0.8 2
1/ 2 1/ 2
7.2 0.8
+
= = =
+


So value of w
2
will be 4
30. Answer: 580
I
B
=
4
0.04
100
mA =
V
CC
= I
B
R
B
+ V
BE
+ (I
B
+ I
C
)Re
32 = 0.04 R
B
+ 0.7 + 4.04 2
R
B
= 580 KO
31. Answer: 53
When | is changed to
`
40
Then new I
C
`
= 400.047 = 1.88 mA
So AI
C
= 4 1.88 = 2.12
So there will be 53% reduction.
32. C&33.D
Current density
0
( )
p x
p
p
qD p p
J
L

=

19 12
3
4 2
1.6 10 12 10
10
19.2 10 /
p
J
A cm

=
=


2
/ 461.54 / sec
p p p
KT
D cm V
q
= =
1 461.54 / sec
p p
v E cm = = =