NTE5638, NTE563806, NTE563808

TRIAC 8A
Isolated Tab
Description:
The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and
MOS devices and features proprietary, voidfree glass passivated chips.
This device is a bidirectional triode thyristor and may be switched from offstate to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5638 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (Gate Open, T
J
= +110C, Note 1), V
DRM
NTE5638 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE563806 600V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE563808 800V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +80C, Conduction Angle of 360C), I
T(RMS)
8A . . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I
TSM
80A . . . . . . . . . .
Peak GateTrigger Current (3s Max), I
GTM
2A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
for 3s Max), P
GM
20W . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
200mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
40 to +150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40 to +110C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
2.5C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics: (T
C
= +25C, Maximum Ratings unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak OffState Current I
DRM
V
DRM
= Max, Gate Open, T
J
= +110C 0.5 mA
Max. OnState Voltage V
TM
I
T
= 8A 1.6 V
DC Holding Current I
H
Gate Open, Note 1 25 mA
Critical RateofRise of OffState
Voltage
Critical
dv/dt
V
D
= V
DRM
, Gate Open, T
C
= +100C,
Note 1
30 V/s
Critical RateofRise of Commutation
Voltage
Commutation
dv/dt
V
D
= V
DRM
, I
T
= 8A, T
C
= +80C,
Gate Unenergized, Note 1
2 V/s
DC Gate Trigger Current
T
2
(+) Gate (+), T
2
() Gate ()
T
2
(+) Gate (), T
2
() Gate (+)
I
GT
V
D
= 12V, R
L
= 60 10 mA
Note 1. All values apply in either direction.
Electrical Characteristics (Contd): (T
C
= +25C, Maximum Ratings unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Gate Trigger Voltage V
GT
V
D
= 12V, R
L
= 60 2.2 V
GateControlled TurnOn Time t
gt
V
D
= V
DRM
, I
GT
= 80mA, t
r
= 0.1s,
i
T
= 10A (Peak)
2.2 s
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
MT
1
.100 (2.54)
MT
2
Gate
.147 (3.75)
Dia Max
Isolated