1220 PROCEEDINGS OF THE IEEE.

JULY 1967
It should benoticed that the amplifier described so far shows a quite
curious stability behavior. The pump power has to be raised until a second I
region of stability is reached. Then the total value of the gain fluctuation
for a given deviation of the capacitance amplitude C, is approximately
the same as for the conventional reflection-type amplifier. However, the 1
I9
gain decreases with increasing pump power and vice versa.
M. Pommvm
Heinrich-Hertz-Inst. f. Schwingungsforsch. b
I - 1
Dt. Akad. d. Wissensch. zu Berlin
Berlin-Adlershof, Germany bL2-n$-f
I
REFERENCES L-g-
[I J K. K. N. Chang and S. Bloom, A parametric amplifier using lower-frequency pump
[2] K. K. N. hg, Four-termi~l parametric ampl i r, Proc. IRE (Correspondence),
[3] C. L. Hogan and R. L. Jcpsen, New type of ferromagnetic amplifier, 1. Appl. Phys.,
141 H. B. Hennine New class of Dar amet r i c a m~ l i f i c ~ ~ enables below-siwal DUI UD~~&
ing,Proc. IRE, vol. 46, pp. 138S1386, July 1958.
vol. 47, p p . 81-82, January 1959.
vol. 29, pp. 422423, March 1958.
Fig. 2. Theoretical waveforms (not to scale). (a) Output circuit disconnected;
shaded area r e p m u stored charge. (b) Output circuit connected.
i , =VAt - tl)/L1 +i , ( t l )
. . - . . -
(51 M. Pommreit, Einige allgermhe Eigmschaften der quasientartetcn parametrischen
IEEE I nr er na~l Conv. Rec., pt. j, pp. 90-97, 1563.
VersWer b%crer Ordnunrr Wiss. Z. Elekrrorech., vol. 7, no. 2, PD. 65-79, 1966.
id =I , cos ot - i,,
[6] -, Em neuarliger tiefnfroquent gequmpter parametrissher V&tiirker, Whs. Z.
Elekrrorech., vol. 7, no. 4, pp. 193-208,1966. and the diode accumulates a charge q(t) :
[7] -, Der ELinilussder zweiten und dritten Kapadtatshannonischen auf die Eigen-
schaften des quasientarteta parametrischem Vierfrequenzenverst&kers, Wiss. 2.
[ 8] -, Dk Dcutung pp
Elektrorech., vol. 8, DO. 2, pp. 65430, 1966.
&I R~ e ~ e ~ ~ I &k r s t i i r l t e r als H~hf req~CnZ-
bandliltcr. Hochfiequenzrech. und Elekrrwkusr., vol. 71, pp. 19&205, June 1%2.
191 -. Parametrische Netnuerke m i t n Hilfsfreouenzen. Wiss. 2. Elekrrorech.. vol.
q(t ) =f id dt.
. ,
[IO] -, Halbleiterdiodemvetiirker, in Elektronisches Rouschen, pt. 2, H. Heifer,
7, no; 3, pp. 3 ~ 9 , 1 9 6 6 .
At time t , given by q(t,) =0, the total charge becomes zero ; the diode
Ed. Leinzix: B. G. Teubner Verlamm.. in DI~SS.
becomes an open circuit and a current pulse is produced in R, as in Fig.
Frequency Mpltiplier Using a ChargeStorage
Di o d eman h h t i v eCi r c ai t
A b S t T U C i - - A n a d j %k i s a r r i e d o P t f ~ U 8 f r e e P e n e y ~ ~ 8
cbfgegtorrrgediodeianidoctivecircPitExpwdom.rederivedfor
~ u d p o w e r ~ f o r t h e a s e n h e r e t b e d i o d e ~ i p
~ T l e r e s J t s 8 r e v e s i E e d e x p m ~ j .
The circuit to beconsidered is shown in Fig. 1. It consists of a charge-
storage (step recovery) diode biased in the reverse direction by a battery
V, with an inductance L, and a resistance R, in parallel. This network is
fed from a current source i p at an input angular frequency a, and the output
at ng is determined by the series circuit L,, C, where R2 is the load resis-
tance. Unlike previous work on this type of circuit [l 1, [2], weassume the
diode depletion-layer capacitance to be neghgibly small. This could occur,
for example, in low-frequency multipliers, as is borne out by the experi-
mental results.
Fig. I . Basic circuit
Let us assume, to start with, that the output circuit L,CR, is removed.
The diode starts to conduct at a time t , given by :
While the diode is conducting, the currents in L, and in the diode are,
respectively,
formed part of a contract with the D.G.R.S.T., Paris.
Manuscript received February 15,1967 ;.revisedMarch 3 and April 3,1%7. The project
Initial Transient
The current i, ( as s u med constant during the transient at a value I,,)
divides itself between L, and L,. By classical methods wefiad the voltage
across L1 :
uL1 =- (Igl +ZLl)Rle-R1(1+u)riL2 ( 5)
where a=L,/L, and I , , is the current in L1 at the start of the transient.
This negative pulse is shown in Fig. 2(b) for R, noL, >>1. For this condi-
tion, the pulse is completed before C has time to charge appreciably. At
the end of this initial transient, the current I, , in L, is given by :
Second Phase
The second part of the transient consists of an oscillation of the cur-
rent iL2 iathe circuit L, , L,, R, where
i , , =I,, cos wbt, (7)
ob being the angular frequency deterained by L,, L,, C in series. The
voltage on L, is thus
where Y,=o&5,1L,. After a time approximately equal to x / ob, for high
harmonics [Fig. 2(b)], the voltage on L, becomes positive; the diode starts
conducting and oscillations occur in L,C due to the energy stored in L,.
The analysis is completed by writing the recurrence relations, incorporat-
ing the initial current in L,C. For the particular case of Qt n , where Q is
the loaded Q factor of the output circuit, weobtain:
q =(2 +a)- (9)
w =qa(1 +a)/(4nn20L2) (10)
VJV, =nJ(1 +a/2). (11)
PROCEEDINGS LETTERS 1221
"Ll
'LI
Fig. 3. Measured waveforms; input: 5 MHz; output: 25 MHz. r,=6 ns, r , =3 0 0 ns,
C, =5pFat - 6V. L, =2. 4pH, L2=1. 2pH, R, =600QR, =16R. Hor i z ont al s c al e :
40 nsjsquare: vertical scale: VLL: IO V.square, i , , =60 mhsquare; i,,:30 mA,'square.
The measured waveforms of Fig. 3 show the two transient phases,
although as expected the initial transient is prolonged due to the non-
negligible recovery time and capacitance of the diode. The following are
typical of the results obtained :
~~
Theoretical Experimental
W (mw)
VJ v, 13 11.5
1.7
rl 0.3 1
4.5
0.2
The complete analysis suggests that this type of circuit would be par-
ticularly suited to high-order, moderate-power multiplication, whereas
the noninductive type of circuit [3] gives excellent results for low-order,
high-power operation.
ACKNOWLEDGMENT
Thanks are due to J . Rouh of C.S.F. for carrying out the experimental
D. J . ROULSTON'
Depart of Elec. Engrg.
University of Waterloo
Waterloo, Ont., Canada
work.
RJFERENCEs
[l ] R. Hall, S. Hamilton, and S. Krakauer, "Impulse shunt-mode harmonic generauon,"
Digest of Technical Papers, 1966 Intefnat'l Solid-state Circuits Conf. .. pp. 6 6 1 .
121 R. Thompson, "Steprecovery diodefrequency multiplier," Necrronics Letters, vol. 2,
pp. 117-1 18, March 1966.
[ 3] D. J. Roulston, "Frequency multiphcation using the charge storage effect: an analysls
for high efficiency, high power operation," Inrernat'lJ. Hecrronics. vol. 18, pp. 73-86,
January l%5.
' On leave from C.S.F., Puteaux 92, France.
Capacitive Feed Tluongh Calculatiom m MOSFET IC's
Abstract-Compbg between lnigbvoltage dock bes a d high-hpd-
ancedifiPsedregiom.hMOSFETICsaobesi@kmt.Aaetbodis
described for CPlceLting the voltage fed onto a modhear pn jmction capac-
i t a n c e f r w r a m e t a l ~ l e d . ~ i s b a s e d a p w a l o a d l i n e
dr am 08 the Q-Y-.
. .
There exists, in integrated circuits (IC's), the possibility of sigmficant
coupling between a metal interconnect lead on an oxide surface and a
diffusion underneath. The situation is especially critical in MOSFET IC's
because of high impedance levels, thin oxides, and the high-level signals
normally encountered. This letter describes a method for calculating the
signal fed onto a voltagedependent p n junction capacitance from a metal
lead.
Figure 1 shows the equivalent circuit used for the feed through analysis.
C, , a fixed MOS capacitor, has a typical value of 0.2 pF/mi12 for loo0 A of
thermal silicon-oxide. C, is a voltagedependent p n junction capacitance.
Vi n - ' 1 T
MOS CAPACITOR,LINEAR
ov
OUTPUT
P-N JUNCTION CAPACITANCE
FUNCTION OF VOLTAGE
ACROSS THE CAPACITOR
Fig. I . Equivalent circuit for feed through analysis.
Since any input step produces equal charge on both capacitors a simple
load line approach on a Q-V plot will yield the solution for the output
voltage as illustrated on the graph of Fig. 1. Equal charge, occurring at
the intersection of the two lines, may be read from the ordinate while the
voltage distribution between the capacitors (required to produce the equal
charge) is read from the abscissa. The load line equation may be obtained
by summing voltages around the equivalent circuit.
Via =Qtic, +V'ut. (1)
To usethe graphical approach described here it is necessary to know the
Q-V relationship for a pn junction. An expression for charge added to a
capacitor (over and above the charge due to diffusion potential) is
AQ =1 "A+:tmld(4 +V') (2)
where V, =applied voltage, 4 =diffusion potential, CIMd =total capac-
itance per unit area, AQ =charge per unit area.
Equation (2) says that the added charge, AQ is the area under the C-V
curve between the voltage limits of 4 and V, +4. The problem now reduces
to finding a relation for Cl4 that can be integrated. There are two possible
approaches. First, C versus Vcan bemeasured plotted, and mechanically
integrated. Second (the approach usedin this letter), an approximate ex-
pression can be derived for cad as a function of (4 +V,) and substituted
into (2).
0
Assume
Qta.1 =K( 4 +%'A)''"
where
Qmld =total charge/unit area, K =constant.
Since
then
c,,,,, =- (4 +V,)'l'"'-
K
n
By knowing the doping levels involved, a curve of Ct,,,=f(4+ VA) can
be obtained (see Lawrence and Warner'). Plotting on log-log paper and
reading the intercept and slope yields K/ n and (l / n)- 1, respectively.
Placing (3) into (2) and integrating results in
AQ =K( 4 +V,)"" - K(4)"". (4)
Manuscript reoeived April IO, 1%7 Bell Sys. Tech. J. , vol. 39, pp. 389403, March 1960.
H. Lawrenceand R. M. Warner, Jr., "DifT'used junction depletion layer calculations,"