TCST1202A

TCST110. up to TCST230.
Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor

Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
B)
Applications
A)
D Contactless optoelectronic switch, control and

counter
15136
Features
D Compact construction
D No setting efforts
D Polycarbonate case protected against
95 10796
ambient light
D 2 case variations
D 3 different apertures
D CTR selected in groups
7.6
0.3
(regarding fourth number of type designation)
Top view
Order Instruction
Ordering Code
TCST1103A)
TCST2103B)
TCST1202A)
TCST2202B)
TCST1300A)
TCST2300B)
Resolution (mm) / Aperture (mm)

0.6
/
1.0
0.4
0.5
0.2
0.25
Remarks
No mounting flags
With two mounting flags
No mounting flags
No mounting flags
Document Number 83764

Rev. A5, 08Jun99
This datasheet has been downloaded from http://www.digchip.com at this page
www.vishay.com
1 (9)
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp 10 ms
Tamb 25C
Symbol
VR
IF
IFSM
PV
Tj
Value
6
60
3
100
100
Unit
V
mA
A
mW
C
Symbol
VCEO
VECO
IC
ICM
PV
Tj
Value
70
7
100
200
150
100
Unit
V
V
mA
mA
mW
C
Symbol
Ptot
Tamb
Tstg
Tsd
Value
250
55 to +85
55 to +100
260
Unit
mW
C
C
C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
tp/T = 0.5, tp 10 ms
Tamb 25C
Coupler
Parameter
Total power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
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2 (9)
Test Conditions
Tamb 25C
2 mm from case, t 5 s

Rev. A5, 08Jun99
Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
IF = 60 mA
VR = 0, f = 1 MHz
Symbol
VF
Cj
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
Test Conditions
IC = 1 mA
IE = 10 mA
VCE = 25 V, IF = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
70
7
Typ.
Max.
Unit
V
V
nA
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
100
Coupler
Parameter
Current transfer ratio
Collector current
Collector emitter
saturation voltage
g
Resolution, path of the

shutter crossing
g the
radiant sensitive zone

Rev. A5, 08Jun99
Test Conditions
VCE = 5 V,
IF = 20 mA
VCE = 5 V,
IF = 20 mA
IF = 20 mA,
IC = 1 mA
IF = 20 mA,
IC = 0.5 mA
IF = 20 mA,
IC = 0.1 mA
ICrel = 10 to 90%
Type
Symbol
TCST1103,
CTR
TCST2103
TCST1202,
CTR
TCST2202
TCST1300,
CTR
TCST2300
TCST1103,
IC
TCST2103
TCST1202,
IC
TCST2202
TCST1300,
IC
TCST2300
TCST1103, VCEsat
TCST2103
TCST1202, VCEsat
TCST2202
TCST1300, VCEsat
TCST2300
TCST1103,
s
TCST2103
TCST1202,
s
TCST2202
TCST1300,
s
TCST2300
Min.
10
Typ.
20
Max.
Unit
%
10
1.25
2.5
mA
mA
0.25
0.5
mA
0.4
0.4
0.4
0.6
mm
0.4
mm
0.2
mm
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3 (9)
Switching Characteristics
Parameter
Turn-on time
Turn-off time
IF
Test Conditions
VS = 5 V, IC = 2 mA, RL = 100 ((see figure
g
1))
Symbol
ton
toff
Typ.
10.0
8.0
+5V
IF
m
m
96 11698
IC = 2 mA; adjusted through

input amplitude
Unit
s
s
RG = 50
tp
= 0.01
T
tp = 50 s
IF
tp
IC
100%
90%
Channel I
Channel II
50
100
y W
x 20 pF
Oscilloscope
RL
1M
CL
10%
0
95 10897
tr
Figure 1. Test circuit, saturated operation
ts
td
ton
tp
td
tr
ton (= td + tr)
tf
toff
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 2. Switching times
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4 (9)

Rev. A5, 08Jun99
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10000
ICEO Collector Dark Current,
with open Base ( nA )
P tot Total Power Dissipation ( mW )
400
300
Coupled device
200
Phototransistor
IR-diode
100
VCE=25V
IF=0
1000
100
10
1
0
30
60
90
120
150
Tamb Ambient Temperature ( C )
95 11088
0
95 11090
Figure 3. Total Power Dissipation vs.

Ambient Temperature
25
50
100
75
Figure 6. Collector Dark Current vs. Ambient Temperature
1000.0
10.000
IC Collector Current ( mA )
I F Forward Current ( mA )
VCE=5V
100.0
10.0
1.0
0.1
0
VF Forward Voltage ( V )
10.00
VCE=5V
IF=20mA
CTR rel Relative Current Transfer Ratio
1.0
1.5
1.0
0.5
25
50
75
100
Figure 5. Relative Current Transfer Ratio vs.

Ambient Temperature
Rev. A5, 08Jun99
10.0
100.0
IF Forward Current ( mA )
Figure 7. Collector Current vs. Forward Current
2.0
95 11089
0.010
96 12066
Figure 4. Forward Current vs. Forward Voltage
0
25
0.100
0.001
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
1.000
IF=50mA
20mA
10mA
1.00
5mA
2mA
0.10
1mA
0.01
0.1
96 12067
1.0
10.0
100.0
VCE Collector Emitter Voltage ( V )
Figure 8. Collector Current vs. Collector Emitter Voltage
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5 (9)
110
10.0
1.0
0.1
0.1
1.0
10.0
A=1mm
80
70
60
50
40
30
20
10
0
0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5
s Displacement ( mm )
96 12005
Figure 9. Current Transfer Ratio vs. Forward Current
Figure 11. Relative Collector Current vs. Displacement

110
20
100
Non Saturated
Operation
VS=5V
RL=100
15
I Crel Relative Collector Current
t on / t off Turn on / Turn off Time ( m s )
90
100.0
IF Forward Current ( mA )
96 12068
100
VCE=5V
CTR Current Transfer Ratio ( % )
100.0
10
ton
5
toff
95 11086
80
Figure 10. Turn on / off Time vs. Collector Current
70
60
50
40
30
20
10
0
0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5
10
A=0.5mm
90
0
0
96 12006

110
100
A=0.25mm
90
80
70
60
50
40
30
20
10
0
0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5
96 12007
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6 (9)

Rev. A5, 08Jun99
Dimensions of TCST1.0. in mm
96 12094

Rev. A5, 08Jun99
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7 (9)
Dimensions of TCST2.0. in mm
96 12095
www.vishay.com
8 (9)

Rev. A5, 08Jun99
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Rev. A5, 08Jun99
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9 (9)

TCST1202A

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TCST1202A

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Direitos autorais:

Formatos disponíveis

TCST110. up to TCST230.

Transmissive Optical Sensor with Phototransistor

D Contactless optoelectronic switch, control and

(regarding fourth number of type designation)

Resolution (mm) / Aperture (mm)

Document Number 83764

This datasheet has been downloaded from http://www.digchip.com at this page

Document Number 83764

Resolution, path of the

Document Number 83764

IC = 2 mA; adjusted through

Figure 1. Test circuit, saturated operation

Figure 2. Switching times

Document Number 83764

P tot Total Power Dissipation ( mW )

Tamb Ambient Temperature ( C )

Figure 3. Total Power Dissipation vs.

Tamb Ambient Temperature ( C )

Figure 6. Collector Dark Current vs. Ambient Temperature

CTR rel Relative Current Transfer Ratio

Tamb Ambient Temperature ( C )

Figure 5. Relative Current Transfer Ratio vs.

Figure 7. Collector Current vs. Forward Current

Figure 4. Forward Current vs. Forward Voltage

VCE Collector Emitter Voltage ( V )

Figure 8. Collector Current vs. Collector Emitter Voltage

Figure 9. Current Transfer Ratio vs. Forward Current

Figure 11. Relative Collector Current vs. Displacement

I Crel Relative Collector Current

t on / t off Turn on / Turn off Time ( m s )

I Crel Relative Collector Current

CTR Current Transfer Ratio ( % )

Figure 10. Turn on / off Time vs. Collector Current

Figure 12. Relative Collector Current vs. Displacement

Figure 13. Relative Collector Current vs. Displacement

Document Number 83764

Document Number 83764

Document Number 83764

Document Number 83764

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