EEE 41 Lec 2

EEE Department, UP Diliman

1
EEE 41
Lecture 2
Diode circuit analysis
Simple explanation of operation
Rectification
Circuit models and analysis
Diode equation
Waveshaping with diodes
Luis G. Sison
Department of Electrical and Electronics Engineering
University of the Philippines - Diliman
EEE 41 Lec 2
EEE Department, UP Diliman
2
Vacuum tube diode
Filament heats up, emits electrons, attracted
or repelled by plate depending on voltage
bias.

ANODE
plate
CATHODE
filament
Historical notes
EEE 41 Lec 2
EEE Department, UP Diliman
3
Vacuum tube diode operation
Filament heated up
by battery: emits
electrons
Forward-bias:
electrons attracted
to anode causing
current flow
Reverse-bias:
electrons repelled
by anode stopping
current flow
Historical notes
EEE 41 Lec 2
EEE Department, UP Diliman
4
Semiconductor diode
Junction of P-type and N-type semiconductor
Other types of semicon diode exist
1940: Russell Ohl discovers that impurities in silicon
determine its electrical properties
Simplified explanation follows
(from sol.sci.uop.edu/~jfalward/semiconductordevices/semiconductordevices.html)
P N
=
CATHODE
ANODE
Band indicates
CATHODE
EEE 41 Lec 2
EEE Department, UP Diliman
5
Pure silicon
4 valence electrons form covalent
bonds with 4 adjacent silicon (Si) atoms
in pure crystalline Si
EEE 41 Lec 2
EEE Department, UP Diliman
6
N-type silicon
Arsenic (As) has 5 valence electrons
If the mobile electron leaves As, remaining As atom
will have positive charge
EEE 41 Lec 2
EEE Department, UP Diliman
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P-type silicon
Boron (B) has 3 valence electrons
Electron from adjacent Si atom can fill in empty B
bond site creating hole
If the empty B bond site is filled, remaining B atom
will have negative charge
EEE 41 Lec 2
EEE Department, UP Diliman
8
Hole movement
Can hole move?
Electron from adjacent Si atom can fill in hole of B atom
Can think of hole as as positive charge that can move
around
hole
Electron from nearby Si atom
fills in empty B bond site
EEE 41 Lec 2
EEE Department, UP Diliman
9
P- and N-type Si
Well discuss how P- and N-type Si are
fabricated in Lecture 26
EEE 41 Lec 2
EEE Department, UP Diliman
10
Diode in static equilibrium
Interface region becomes depletion region (devoid
of mobile charges)
EEE 41 Lec 2
EEE Department, UP Diliman
11
ON diode (forward-biased)
holes electrons
net current
EEE 41 Lec 2
EEE Department, UP Diliman
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OFF diode (reverse-biased)
holes electrons
no net current!
Charges are
attracted towards
terminals and do
not cross the
depletion region
Depletion region
widens
EEE 41 Lec 2
EEE Department, UP Diliman
13
Diode terminal characteristics
Anode
Cathode
D
v
D
i
Q: Whats the I-V curve of a resistor?
Voltage source? Current source? Short
circuit? Open circuit?
1V 2V
-50V -100V
-1uA
-2uA
10mA
20mA
Forward
Reverse
EEE 41 Lec 2
EEE Department, UP Diliman
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0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7
0
0. 002
0. 004
0. 006
0. 008
0. 01
0. 012
0. 014
0. 016
0. 018
0. 02
Diode equation
( ) 1 =
T D
V v
S D
e I i

mV V
T
26 =
at room temp
fA I
S
1 . 0 =
fA I
S
1 =
D
v
D
i
EEE 41 Lec 2
EEE Department, UP Diliman
15
A simple diode circuit
Half wave rectifier
Q: Whats the output voltage? Whats
the diode voltage/current?
) 60 2 sin( 10 t v
I
=
O
v
K 1
EEE 41 Lec 2
EEE Department, UP Diliman
16
Diode model: 1st approx
Short and open
1V 2V
-50V -100V
-1uA
-2uA
10mA
20mA
ON:
OFF:
0 , 0 =
D D
i v
0 , 0 =
D D
v i
EEE 41 Lec 2
EEE Department, UP Diliman
17
Circuit operation
I
v
V 10
V 10
V 10
V 10
anode at 10V,
cathode cnnctd
to GND (0V)
thru R:
forward-bias,
diode short
V ?
V ?
anode at -10V,
cathode cnnctd
to GND (0V)
thru R:
reverse-bias,
diode open
EEE 41 Lec 2
EEE Department, UP Diliman
18
Circuit analysis with diodes
Guess the state of the diode(s)
Replace the diode(s) with
corresponding linear model(s)
Verify if state is consistent with model
if assumed OFF, check if voltage neg
if assumed ON, check if current pos
EEE 41 Lec 2
EEE Department, UP Diliman
19
Diode model: 2nd approx
Q: Determine the output of the simple
diode circuit using 2nd approx.
1V 2V
-50V -100V
-1uA
-2uA
10mA
20mA
ON:
OFF:

V
Cut-in voltage:
~0.7V Si diode
~0.3V Ge/Schottky diode
~2V LED
0 , =
D D
i V v

V v i
D D
= , 0
=
V
Note: Assume higher cut-in voltages for
larger currents (e.g. >1A), smaller for
lower currents (e.g. <1mA)
EEE 41 Lec 2
EEE Department, UP Diliman
20
Diode model: 3rd approx
Q: Determine the output of the simple
diode circuit using 3rd approx.
1V 2V
-50V -100V
-1uA
-2uA
10mA
20mA
ON:
OFF:

V
0 , + =
D D F D
i i R V v

0 ,
1
=
D
R
D D
v
R
v i
=

V
F
R
=
R
R
EEE 41 Lec 2
EEE Department, UP Diliman
21
Circuit analysis w/ diodes
Problems w/ 3rd approx.
where to get R
F
and R
R
? Value depends on
magnitude of voltages/currents in circuit.
1
st
or 2
nd
approximation good enough most of
the time
Diode equation used for small-signal analysis
(Lecture 9)
Qualitatively and intuitively analyze circuit
function and operation first before proceeding
to quantitative analysis.
EEE 41 Lec 2
EEE Department, UP Diliman
22
Voltage clipper
Q: Whats the output voltage?
Q: Design a circuit that keeps the
voltage above 3V.
1N914:
general purpose diode
+5V
) (t v
O
1K
) 60 2 sin( 10 t