Elementary charge 1.

60E-19 coulombs
Boltz 8.62E-05 eV/K
Avogadro 6.02E+23 atoms/mol
Plancks 6.63E-34 J-s
Speed of light 3.00E+08 m/s
Gas cnst 8.31E+00 J/K-mol
permittivity of free space 8.85E-12 F/m
mass of an electron 9.11E-31 kg
Q (watts) Area (cubic meter)
3333 0.5
Q total Q3 (watts) Q2
47.69 15.90 15.90
Enthalpy Change H Change U
0
Heat Capactiy Heat Cv Change Temp
#DIV/0!
Heat Cp Change Temp
#DIV/0!
linear Coefficent of Thermal expansion material A
(1/degrees C)
initial Volume for
material A (cubic
cm)
Final Volume for material A
(cubic cm)
7.60E-06 1 0.9938
look up
Thermal Stress
(mpa) coeff. Linear expansion
Double pain with argon gas steady state
Single Pane
Volumetric thermal expansion
compressive (Tf>Ti), thermal stress<0 -172 0.00002
tension 172 0.00002
Steady State diffusion
Diffusion Flux
(m^2/s)
mass or number of atoms
(kg/hr)
find mass per time, given depth, area, temp, diff coef,
concentration, time 1.40E-08 1.01E-05
find diff coeff., given depth, wt%, diff flux. 1.40E-08 1.01E-05
A-wt% B-wt%
0.012 0.0075
Non steady state
Concentration at
Depth x (Cx)
Concentration Before
Diffusion (C0)
solve for erf(z) and z using table
0.45 0.2
solve for diffusion (D) using D0 and Qd
x x
solve for time (t) given x
x x
solve for depth (x) given t
x x
Non steady state
Concentration at
Depth x (Cx) total solute per unit area
given S, D, and t 0.482 1.001E-03
given x, D, and t 0.482 x
find S given D, t, and x x 1.001E-03
Activation energy for CREEP (Qc) J/mol-K
Temperature 1
(Kelvin) Temperature 2 (kelvin0
186329.2125 700 811
MORE CREEP: Strain Rate (1/hr) stress (Mpa)
Dependence of creep strain rate on stress 19600 140
Fick's Second Law Case 2; Diffusion from a Finite Source
percent weight to kg/m^3
Fick's Second Law Case 1; cnst surface concentration (infinite source)
Dependence of creep strain rate on stress AND
Temperature 19588 140
percent Ionicity
Electronegetivity of
more EN element
Electronegetivity of less EN
element
0.99502% 2.1 1.9
XRD for BCC
sqrt of sum of
squares hkl
d (nm)
find d given R and hkl x 0.1655
find d and R, given hkl, diff angle, lamda x 0.1655
find sqrt of sum of squares hkl given DA, R, and lambda 3 0.1655
Find DA, given hkl, R, and lamda X 0.1655
XRD for FCC
sqrt of sum of
squares hkl
d (nm)
find d given R and hkl 11 0.1183
find d and R, given hkl, diff angle, lamda 11 0.1183
find sqrt of sum of squares hkl given DA, R, and lambda 11 0.1183
Find DA, given hkl, R, and lamda 11 0.1183
Density BCC (g/cc) a (cm) R (cm)
7.90E+00 2.86E-08 1.24E-08
7.90E+00 2.86E-08 x
Density FCC (g/cc) a (cm) R (cm)
22.44 3.84666E-08 1.36E-08
22.44 3.85E-08 x
Vacancy equations
Fraction of atom
sites
Vacancys per cubic
centimeter
2.41E-05 1.99E+18
Schottky/Frenkel
Fraction of atom
sites defects per cubic centimeter
3.36E-09 5.30E+13
Kic( Mpa-sqrt(m))
crack propagation or critical
stress at fracture (Mpa)
find flaw size given crit stress 40 400
find crit stress given max flaw size
40 400
Flexural strength
(mpa) Width (mm)
find load given strength and dimensions 150 8
find flex strength given load and dimensions 150 8
Flexural strength
(mpa) Radius (mm)
find load given strength and dimensions 150 8
find flex strength given load and dimensions 150 8
Voltage (V) Resistance (ohms)
find V 20 4
Find R 20 4
Find I 20 4
Resistance (ohm) Diameter (cm)
Find cond between voltmeter and resistance of the entire
length with given values 125.00 0.510
Flexural Strength (circular)
Flexural Strength (rectanglular)
Fracture Toughness
Ohm's Law
Electrical Conductivity using ohms law
Find minimum Diameter for wire to exp 1.5V drop over it's
entire length 125.00 0.510
Find Resistance, current, current density, and the magnitude
of the electric field. All over its entire length. 125.00 0.51
Find max wire length. 125 0.51
Thickness (cm) Length (cm)
Step 1, use dimensions and ohms law to determine the
conductivity and resistivity of the semi conductor 0.1 1.5
Step 2. Dope with [Al] for a p-type semiconductor and find
the mobility of the majority carriers (holes).
x x
Ec = energy of the
bottom edge of the
conduction band
(eV)
Ev = energy of the top edge
of the valence band (eV)
example (silicon intrinsic) ni increases with temp 1 1
Electron
concentration (m^-
3) Drift Velocity (m/s)
3.00E+18 100
3.00E+18 100
3.00E+18 100
3.00E+18 100
Hole concentration
(m^-3) Hole Mobility (m^2/V-s)
5.00E+22 0.03
5.00E+22 0.02
Intrinsic Semiconductor
Electrical Resistivity of Metals
Extrinsic Semi Conductor (p-type)
Extrinsic Semi Conductor (n-type)
Material Resistivity at 20C
rt
(m)
Aluminum
(annealed) 2.83E-08
Copper (annealed
standard) 1.72E-08
Gold 2.44E-08
Iron (99.99+%) 9.71E-08
Lead (99.73+%) 2.06E-07
Magnesium
*99.80%) 4.46E-08
Mercury 9.58E-07
Nickel (99.95% +
Co) 6.84E-08
Nichrone (66% Ni +
Cr and Fe) 1.00E-06
Platinum (99.99%) 1.06E-07
Silver (99.78%) 1.59E-08
1.07E-07
1.75E-07
Tungsten 5.51E-08
Zinc
5.92E-08
Steel (wire)
1.38E-16 erg/K 1.38E-23 J/K
5.189eV/K-mol
Kglass T1 T2 Xglass (m)
2 5 15 0.003
Q1 Area (cubic meter) Kgas (w/m-K) Kglass T1
15.90 0.5 0.016 2 5
Change P Volume Final Length (m)
Original Length
(m)
0.2 0.1
0.2 0.1
change U 0.2 0.1
0.2 0.1
Change H 0.2 0.1
Initial Density for
material A (g/cc)
final density for
material A (g/cc)
Mass for material
A (g)
Initial Temperature
for Material A
Final
Temperature for
material A
4.000 4.0249 4 573 302.02
look up
Modulus elasticity
(mpa) Temp, final Temp, intitial Change in temp
Double pain with argon gas steady state
Single Pane
Volumetric thermal expansion
linear thermal expansion
100000 106 20 -86
100000 20 106 86
area (m^2) time (s/hr)
diffusion
coefficent (m^2/s) Ca (kg/cubic meter)
Cb (kg/cubic
meter)
0.2 3600 3.95E-11 0.9441 0.5901
0.2 3600 3.95E-11 0.9441 0.5901
density A (g/cc) density B (g/cc) A Kg/cubic meter B kg/cubic meter
grams to kg
factor
2.25 7.87 0.9441 0.5901 1000
Surface Concentration
(Cs) depth (x) meters time (t) sec Diffusion erf(z)
1.3 x x x 0.7727
x x x 1.94E-11 x
x 0.002 70561 1.94E-11 x
x 0.002 70561 1.94E-11 x
Diffusion depth (x) meters time (s)
diffusion coeff.
(D)
1.94E-11 x 70561.1 1.94E-11
1.94E-11 0.002 70561.1
1.94E-11 0.002 70561.1
Strain Rate 1 (1/hour)
Strain Rate 2
(1/hour)
1.00E-07 8.00E-06
K1=cnst n=cnst K2=cnst Qc (J/mol-K) Temperature (K)
1 2 x x x
Fick's Second Law Case 2; Diffusion from a Finite Source
percent weight to kg/m^3
Fick's Second Law Case 1; cnst surface concentration (infinite source)
Diffusion given Qd, D0, and temp
x 2 1 10 2000
a (nm) R (nm) h k l
0.2866 0.1241 1 1 1
0.2866 0.1241 1 1 1
0.287 0.1241 x x x
0.287 0.1241 1 1 1
a (nm) R (nm) h k l
0.3923 0.1387 1 1 3
0.3923 0.1387 1 1 3
0.3923 0.1387 x x x
0.3923 0.1387 1 1 3
Atomic Weight
(g/mol) Volume atoms/cell
55.85 2.35E-23 2
55.85 2.35E-23 2
Atomic Weight
(g/mol) Volume atoms/cell
192.2 5.69E-23 4
192.2 5.69E-23 4
atoms/cc density (g/cc)
atomic weigth
(g/mol) Temp (kelvin)
Activation
energy
(eV/atom)
8.24584E+22 7.65 55.85 600 0.55
atoms/cc
density elment
1+element 2 (g/cc)
atomic weigth
(g/mol) Temp (kelvin)
Activation
energy
(eV/atom)
1.57E+22 1.95 74.55 773 2.6
Max flaw size (mm) strain z at fracture Yield Strength Mpa Modulus Mpa lo
3.183 0.478 400 200000 48.8
3.183
height (mm) Length (mm) Failure Load (N)
2.5 25 200
2.5 25 200
Length (mm) Failure Load (N)
25 9651
25 9651
Current (amps)
5
5
5
Area (cm^2)
Length of specimen
(cm)
Distance between
+/- on voltmeter
(cm) Voltage (V)
Current (amps or
coulombs/sec)
0.2043 5.1 12.5 0.1
Flexural Strength (circular)
Flexural Strength (rectanglular)
Fracture Toughness
Ohm's Law
Electrical Conductivity using ohms law
0.2043 5.1 12.5 0.1
0.2043 5.1 12.5 0.1
0.2043 5.1
Area (cm^2) Width (cm) Voltage (V) Current (amps)
Resistance
(ohms)
0.05 0.5 1 0.019 52.63
x x x x x
Ef =
Eg= band gap
energy (eV)
N
v
= effective
density of states in
valence bonds 1/cc
N
c
= effective
density of states in
conduction band
1/cc
Temperature
(kelvin)
1.18 1.12 1.20E+19 2.80E+19 200
Electric Field (V/m)
Electron Mobility
(m^2/V-s)
Conductivity (ohm-
m)^-1 Current Density
500 0.2 0.0961200 48.06
500 0.2 0.09612 48.06
500 0.2 0.09612 48.06
500 0.2 0.09612 48.06
Temperature Conductivity
300 240.3
400 160.2
Intrinsic Semiconductor
Electrical Resistivity of Metals
Extrinsic Semi Conductor (p-type)
Extrinsic Semi Conductor (n-type)
Temperature
coefficient of
resistivity at 20C
(C
-1
) Temperature Final Temperature Initial
Change in
Temperature Resistivity
0.0039 1000 200 800 1.17E-07
0.00393 1000 200 800 7.14E-08
0.0034 1000 200 800 9.08E-08
0.00651 1000 200 800 6.03E-07
0.00336 1000 200 800 7.61E-07
0.01784 1000 200 800 6.81E-07
0.00089 1000 200 800 1.64E-06
0.0069 1000 200 800 4.46E-07
0.0004 1000 200 800 1.32E-06
0.003923 1000 200 800 4.39E-07
0.0041 1000 200 800 6.81E-08
0.006 1000 200 800 6.21E-07
0.0036 1000 200 800 6.79E-07
0.0045 1000 200 800 2.53E-07
0.00419 1000 200 800 2.57E-07
T2 T3 T4 Xglass (m) Xgas (m)
5.0318 14.9682 15 0.002 0.005
Final
Temperature
Initial
Temperature
Linear Coefficent of
Thermal expansion
(1/degrees C)
100 20 0.0125
100 20 0.0125
100 20 0.0125
100 20 0.0125
100 20 0.0125
Heat capcity Cp
for material A (J/g-
k) Q (J)
% change in density
material A
initial Volume for
material B (cubic cm)
Final Volume for
material B (cubic cm)
0.775 840.04 0.6% 50 50.04
look up
Double pain with argon gas steady state
Volumetric thermal expansion
linear thermal expansion
change in
concentration
(kg/cubic meter)
change in depth
(m) concentration gradient
0.354 0.001 354
0.354 0.001 354
z D0 (m2/s) Temperature (K) Activation Qd (J/mol)
z
0.854
x x x
0
x 2.30E-05 1273 148000 0.025
0.854 x x x 0.05
0.854 x x x 0.1
0.15
0.2
Temp indpendent
const (D0)
Activation
energy Qd
(J/mol) Temperature (Kelvin)
0.25
2.30E-05 148000 1273 0.3
0.35
0.4
0.45
0.5
Fick's Second Law Case 1; cnst surface concentration (infinite source)
Diffusion given Qd, D0, and temp
2*theta
(diffraction angle,
DA) degrees 2*theta, radians
lamda (nm) Energy (J) Frequency (Hz)
24.81 0.433 0.0711 2.80E-15 4.22E+17
24.81 0.433 0.0711 2.80E-15 4.22E+17
24.81 0.433 0.0711 2.80E-15 4.22E+17
24.81 0.433 0.0711 2.80E-15 4.22E+17
2*theta
(diffraction angle,
DA) radians
2*theta,
DEGREES
lamda Energy Frequency
1.42 81.36 0.1542 1.29E-15 1.945E+17
1.42 81.36 0.1542 1.29E-15 1.95E+17
1.42 81.36 0.1542 1.29E-15 1.95E+17
1.42 81.36 0.1542 1.29E-15 1.95E+17
Lf or fracture
length (mm) strain y Ao (area prior) Do (mm) Af
72.14 -0.141 128.7 12.8 95.03
Conductivity
(ohm-cm)^-1
Resistivity (ohm-
cm)
Current Density
(amps/cm^2)
Electric field intensity
(volts/cm)
Force on a single charge
(N)
0.1997 5.0069 0.49 2.45 3.93E-17
Fracture Toughness
Electrical Conductivity using ohms law
0.1997 5.007 0.49 2.45 3.93E-17
0.1997 5.0069 0.49 2.45 3.93E-17
5.0069
Resistivity (ohm-
cm)
Conductivity
(ohm-cm)^-1
Carrier concentration
of dopant (cm^-3)
Hole Mobility (cm^2/V-
s)
1.75 0.57 x
x 0.57 1.00E+17 35.6
ni = carrier
concentration
(intrinsic) 1/cc
n = carrier
concentration
(n-type
extrinsic) 1/cc
p = carrier
concentration (p-type
extrinsic) 1/cc n*p ni^2
1.43E+05 8.18E+14 4.11E+23 3.36E+38 2.05E+10
Intrinsic Semiconductor Doping parameters (p-type)
Initial Density
for material B
(g/cc)
final density
for material B
(g/cc)
Initial Mass for
material B (g)
Initial
Temperature for
Material B
Final
Temperat
ure for
material B
Heat
capcity Cp
for
material B
(J/g-K)
1 0.9991 50 298 302.02 4.18
look up
Volumetric thermal expansion
erf(z) z erf(z) z erf(z)
0 0.55 0.5633 1.3 0.934
0.0282 0.6 0.6039 1.4 0.9523
0.0564 0.65 0.642 1.5 0.9661
0.1125 0.7 0.6778 1.6 0.9763
0.168 0.75 0.7112 1.7 0.9838
0.2227 0.8 0.7421 1.8 0.9891
0.2763 0.85 0.7707 1.9 0.9928
0.3286 0.9 0.797 2 0.9953
0.3794 0.95 0.8209 2.2 0.9981
0.4284 1 0.8427 2.4 0.9993
0.4755 1.1 0.8802 2.6 0.9998
0.5205 1.2 0.9103 2.8 0.9999
Df or fracture
dia. (mm) v
11 0.294
acceleration of
a single charge
(m/s^2)
charge Flux
(Volt-meters) charge
number of
electrons
4.31E+13 0.005011831 4.44E-14 2.77E+05
Fracture Toughness
Electrical Conductivity using ohms law
4.31E+13
4.31E+13
Linear Coefficent of
Thermal expansion
material B
(1/degrees C)
% change
in density
material A
7.13E-05 0.09%
look up
Volumetric thermal expansion
Elementary charge 1.60E-19 coulombs
Boltz 8.62E-05 eV/K
Avogadro 6.02E+23 atoms/mol
Plancks 6.63E-34 J-s
Speed of light 3.00E+08 m/s
Gas cnst 8.31E+00 J/K-mol
permittivity of free space 8.85E-12 F/m
mass of an electron 9.11E-31 kg
Q (watts) Area (cubic meter)
3333 0.5
Q total Q3 (watts) Q2
47.69 15.90 15.90
Enthalpy Change H Change U
0
Heat Capactiy Heat Cv Change Temp
#DIV/0!
Heat Cp Change Temp
#DIV/0!
linear Coefficent of Thermal expansion material A
(1/degrees C)
initial Volume for
material A (cubic
cm)
Final Volume for material A
(cubic cm)
7.60E-06 1 0.993821641
look up
Thermal Stress
(mpa) coeff. Linear expansion
compressive (Tf>Ti), thermal stress<0 -172 0.00002
Single Pane
Double pain with argon gas steady state
Volumetric thermal expansion
tension 172 0.00002
Activation energy for CREEP (Qc) J/mol-K
Temperature 1
(Kelvin) Temperature 2 (kelvin0
186329.2125 700 811
MORE CREEP: Strain Rate (1/hr) stress (Mpa)
Dependence of creep strain rate on stress 19600 140
Dependence of creep strain rate on stress AND
Temperature 19588 140
1.38E-16 erg/K 1.38E-23 J/K
5.189eV/K-mol
Kglass T1 T2 Xglass (m)
2 5 15 0.003
Q1 Area (cubic meter) Kgas (w/m-K) Kglass T1
15.90 0.5 0.016 2 5
Change P Volume Final Length (m)
Original Length
(m)
0.2 0.1
0.2 0.1
change U 0.2 0.1
0.2 0.1
Change H 0.2 0.1
Initial Density for
material A (g/cc)
final density for
material A (g/cc)
Mass for material
A (g)
Initial Temperature
for Material A
Final
Temperature for
material A
4 4.024867075 4 573 302.0193305
look up
Modulus elasticity
(mpa) Temp, final Temp, intitial Change in temp
100000 106 20 -86
Single Pane
Double pain with argon gas steady state
linear thermal expansion
Volumetric thermal expansion
100000 20 106 86
Strain Rate 1 (1/hour)
Strain Rate 2
(1/hour)
1.00E-07 8.00E-06
K1=cnst n=cnst K2=cnst Qc (J/mol-K) Temperature (K)
1 2 x x x
x 2 1 10 2000
T2 T3 T4 Xglass (m) Xgas (m)
5.031796502 14.96820 15 0.002 0.005
Final
Temperature
Initial
Temperature
Linear Coefficent of
Thermal expansion
(1/degrees C)
100 20 0.0125
100 20 0.0125
100 20 0.0125
100 20 0.0125
100 20 0.0125
Heat capcity Cp
for material A (J/g-
k) Q (J)
% change in density
material A
initial Volume for
material B (cubic cm)
Final Volume for
material B (cubic cm)
0.775 840.0400754 0.6% 50 50.04
look up
Double pain with argon gas steady state
linear thermal expansion
Volumetric thermal expansion
Initial Density
for material B
(g/cc)
final density
for material B
(g/cc)
Initial Mass for
material B (g)
Initial
Temperature for
Material B
Final
Temperat
ure for
material B
Heat
capcity Cp
for
material B
(J/g-K)
1 0.999140606 50 298 302.0193 4.18
look up
Volumetric thermal expansion
Linear Coefficent of
Thermal expansion
material B
(1/degrees C)
% change
in density
material A
7.13E-05 0.09%
look up
Volumetric thermal expansion