MTGN 415: Electrical Properties of Materials

Spring Semester 2012

Homework No. 1
Assigned: January 13
th
, 2012 Name: __ey__________
!ue: January 23
rd
, 2012
1."20# $% the energy re&uired to mo'e a unit e(e)tron )harge a)ross a potentia(
di%%eren)e o% one 'o(t is de%ined as an *e(e)tron 'o(t,* denoted *e+*, )a()u(ate:
a.",# an e+ in Jou(es
By definition in the problem statement:
-.",# the energy in Jou(es to mo'e one mo(e o% e(e)trons a)ross a potentia( o%
one 'o(t
Starting with 1 mole of electrons
which is also Faradays constant.
).",# same as in *-* -ut in ki(o)a(ories.mo(e
d.",# the 'a(ue o% /"or k# in e+.mo(e)u(e0
Starting with the universal gas constant:
which is the Boltzmann constant.
e.",# and, i% therma( energy is gi'en as k1, )a()u(ate the therma( energy in e+ at
300 and 1000
o
2.
J eV
C e
C J V
V e eV
19
19
1
10 * 602 . 1 1
10 * 602 . 1 1
* 1 1
1 * 1 1

=
=
=
=

e mol J
eV
C
e
eV
e mol
e
e mol / 485 , 96
1
10 * 602 . 1
1
1
1
10 * 022 . 6
1
19 23

=

e mol kcal
cal
kcal
J
cal
e mol J / 045 . 23
10
1
184 . 4
1
/ 485 , 96
3
K molecule eV
molecule
mol
J
eV
K mol
J
R * / 10 * 617 . 8
10 * 022 . 6
1
10 * 602 . 1
1
*
314 . 8
5
23 19

=
( ) eV eV K
K molecule
eV
E
K
025 . 0
40
1
300
*
10 * 167 . 8
5
300

=

( ) eV K
K molecule
eV
E
C
1097 . 0 15 . 273 1000
*
10 * 167 . 8
5
1000
+

=

2."13# 1he e(e)tri)a( )ondu)ti'ity o% a materia( is gi'en -y 4 565ne. !e%ine these
terms and gi'e a )onsistent set o% units.
a."3# electrical conductivity units ohm!cm"
#1

-."3# n concentration of charge carriers units $%cc
)."3# z $ of free charge of carriers units unit less

d."3# e elementary unit of charge units &oul
e."3# mobility of charge carriers units cm
'
%(!s
3."20# a."10# 1he density and mo(e)u(ar weight o% Si are respe)ti'e(y 2.33 g.)) and
27.08 g.mo(e, )a()u(ate the num-er o% Si atoms per m
3
.
Answer ,.883010
27
atom Si.m
3

-."10# $% the si(i)on in part a. is doped with 0.01 w.o "weight per)ent# arseni),
)a()u(ate the num-er o% arseni) atoms per )).
First) the concentration must be converted to mol fraction of *s atoms:
+*s,-../'10 g%mol
+Si,'1.2/ g%mol
Answer 1.793010
17
atom As.))
3 28
3
6
23
/ 10 * 995 . 4
1
10
/ 10 * 022 . 6
/ 09 . 28
/ 33 . 2
'
;
m atom
m
cc
mol atoms
mol g
cc g
n
weight molecular M
density
Number s Avagadro N
M
N
n
A
A
=

5
10 * 75 . 3
09 . 28 / 99 . 99 9216 . 74 / 01 . 0
9216 . 74 / 01 . 0
/
/

=
+
=

i
i i
i i
i
M w
M w
X
cc As atom
cc
m
m
atom
n X n
Si As As
/ 10 * 873 . 1
10
1
10 * 995 . 4 10 * 75 . 3
18
6
3
3
28 5
=

= =

,."20# :agnetite, ;e
3
<
,
, )an -e written as ;e<
.
;e
2
<
3
. $% ea)h ;e
=2
ion )ontri-utes one
e(e)tron to the e(e)tri)a( )ondu)ti'ity, and the density, mo(e)u(ar weight, and e(e)tri)a(
)ondu)ti'ity at room temperature o% ;e
3
<
,
are: 3.17 g.)), 231.3, g.mo(e, and 100
"ohm>)m#
>1
respe)ti'e(y,
a",#. 2a()u(ate the num-er o% ;e
=2
ions and e(e)trons per )).
Because each Fe
'3
only contributes 1 electron) the number of electrons%cc is the same value.
Answer 1.3,92010
22
atom ;e
2=
.)) or e
>
.))
-.",# 2a()u(ate the num-er o% ;e
=3
ions per ))
Answer 2.?8,010
22
atom ;e
3=
.))
).",# 2a()u(ate the num-er o% o@ygen ions per ))
Answer 3.38010
22
atom <
2>
.))
d."7# 2a()u(ate the e(e)tron mo-i(ity ")m
2
.+>s# at room temperature
From 4uestion ':
*pplying values from problem statement:
5e 6now from 7hms law that (,8!9) so:
:herefore)
Answer 40.0,?3 )m
2
.+0s
cc e atom
! e
e
mol ! e
mol g
cc g
n
e
/ 10 * 3472 . 1
1
1
/ 10 * 022 . 6
/ 54 . 231
/ 18 . 5
2 22
4 3
2
4 3
23
2
+
+
=

=
+
cc e atom
! e
e
mol ! e
mol g
cc g
n
e
/ 10 * 694 . 2
1
2
/ 10 * 022 . 6
/ 54 . 231
/ 18 . 5
3 22
4 3
3
4 3
23
3
+
+
=

=
+
cc e atom
! e
!
mol ! e
mol g
cc g
n
!
/ 10 * 39 . 5
1
4
/ 10 * 022 . 6
/ 54 . 231
/ 18 . 5
3 22
4 3
2
4 3
23
2
+

ne "

=
C ohm cm
C cc
cm ohm
* / 0463 . 0
) 10 * 602 . 1 )( / 10 * 3472 . 1 ( 1
) * ( 100
2
19 22
1
=
=

1
* *

= s C ohm Volt
s V cm * / 0463 . 0
2
=
3."23# At the right, sket)h how the e(e)troni) )ondu)ti'ity 'aries with temperature %or a
typi)a( meta(, an intrinsi) semi)ondu)tor, and an e@trinsi) semi)ondu)tor. A@p(ain
why "with words, diagrams and e&uations as appropriate# these trends are
o-ser'ed.
+etal conductors have plenty of electrons available for conduction; however) atoms tend
to scatter their tra<ectory. 5ith increasing temperature) atoms begin to vibrate more
intensely) increasing the scattering and decreasing the overall mobility of electrons
through the metal.
9ntrinsic semiconductors rely on thermally activating electrons from the valence band up
to the conduction band) which follows an *rrhenius type behavior. 9ncreasing the
temperature increases the overall concentration of charge carriers) which increases the
conductivity.
=>trinsic doped semiconductors have lower energy re4uirements to e>cite charge
carriers and have some conductivity at lower temperatures than normally e>pected by
the same material. ?owever) phonon scattering of electrons still occurs at the lower
temperatures leading to a slight decrease in conductivity. =ventually) *rrehenius type
behavior begins to dominate the e>trinsic system leading to increasing conductivity with
temperature.