April 2010

Renesas Electronics

Power MOSFETs and IGBT for PDP

Merits

Power MOSFET
Low ON resistance
Low Qg
High avalanche tolerance

IGBT
Low VCE (sat)
High-speed switching

PDP System
PDP trends
Scan IC

Y
Panel

Sustain
circuit

Power device
High breakdown
voltage

High Intensity

Sustain
circuit

High pressure Gas

Low resistance
High speed switching

High Efficiency
Addressing IC

Optimum FET
Low Cost
TV/PC
Signal

PDP
Signal
processing

Timing
control

Power
supply

IGBT

Wide MOSFET
line-ups
High Speed IGBT

Product Lineup
Power MOSFET
P/N
H7N1005LS
H7N1004LS
H5N2301PF
H5N2306PF
H5N2305PF
H5N2509P
H5N2503P
H5N3004P
H5N3007LS
H5N3003P
H5N3504P

VDSS
(V)
100
100
230
230
230
250
250
300
300
300
350

Maximum Rating
ID
(A)
15
30
25
30
35
30
50
25
25
40
20

VGS
(V)
20
20
30
30
30
30
30
30
30
30
30

Electrical Characteristics
VGS(off)
RDS(on)
typ(V)
typ(m
2.0
85
2.0
25
3.5
65
3.5
48
3.5
30
3.5
53
3.5
40
3.5
75
2.8
120
3.5
60
3.5
100

Package
LDPAK
LDPAK
TO-3PFM
TO-3PFM
TO-3PFM
TO-3PFM
TO-3P
TO-3P
LDPAK
TO-3P
TO-3P

IGBT (High-speed type)

P/N
GN4030V5AB
GN6030V5AB
RJP3053DPP
RJP3063DPP
RJP3054DPP
RJP3064DPP
RJP3055DPP
RJP3065DPP
RJP4065DPP
RJP2557DPK
RJP3056DPK
RJP3057DPK
RJP3066DPK
RJP3067DPK
RJP4067DPK

VCES
(V)
400
600
300
300
300
300
300
300
400
270
300
300
300
300
400

Maximum Rating
IC
(A)
30
30
30
30
35
35
40
40
40
50
45
50
45
50
50

2010. Renesas Electronics Corporation, All rights reserved.

VGE
(V)
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30

Electrical Charcteristics
VCE(sat)
tf
(V) typ
(S)
1.5
0.12
1.7
0.12
2.0
0.15
1.7
0.30
1.8
0.15
1.5
0.30
1.8
0.15
1.5
0.3
1.6
0.3
1.6
0.15
1.6
0.15
1.6
0.15
1.4
0.3
1.4
0.3
1.7
0.35

Package
TO-220AB
TO-220AB
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P

Free Datasheet http://www.datasheet4u.com/

April 2010
Renesas Electronics

Power MOSFETs for Backlight Inverter

Achieve Miniaturization and Higher Efficiency
Features
Low on resistance, High-speed switching
Low Qg, Low Qgd

Small package, Built-in 2 elements

Merits
High efficiency

Mniaturization

Example of Application Circuit (LCD TV, TFT Monitor, Note PC)

Full Bridge
Vin

Push/Pull

Half Bridge
Vin

Pch

Pch

HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG

HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
HRV103A

Vin
Nch

HAT2215R(80V)
Dual Nch in 1PKG

HRV103A

Nch

Nch
Nch

Vds(peak)=Vin + V(surge)

Vds(peak)=2Vin + V(surge)

Vds(peak)=Vin + V(surge)

Product Lineup
Max.Ratings
No

Type No

RDS(on) (m)
VGS=10v
max

13
16.5
18
23
24
30
15
19
20
25

Qgd
(nc)
1.8
1.1
3.2
5.8
5.2

Qg
nC)
7.5
4.4
10
17
11.5

40

19

24

1.2

4.6

40

58

27

34

1.1

6.6

29

43

25

32

3.2

10

20

3.4

100

145

88

115

1.3

7.3

-60

20

60

85

40

50

37

11 HAT3029R

30
-30

20
+10/-20

6
-6

40
36

58
53

27
25

34
32

1.1
4.4

3.1
11.5

12 HAT3037R

45
-45

20
+10/-20

5
-3.8

55
95

75
130

44
75

55
95

0.9
1.5

3.0
4.9

13 HAT3010R

60
-60

20
20

6
-5

32
90

45
130

25
60

32
76

8
8

18
18

1
2
3
4
5

HAT2199R
HAT2208R
HAT2256R
HAT1131R
HAT1132R

Single

6 HAT2276R
7 HAT2280R
8 HAT2275R

Nch+Nch

9 HAT2215R
10 HAT1126R

14 HAT3031R
15 HAT3038R
16 HAT3021R
17 HAT3019R

Pch+Pch

Nch+Pch

VGS=4.5v(8v)
max

17
25
24
35
28
41
21.5
31
27.5
40

VDSS
V)
30
30
60
-30
-30

VGss
V)
20
20
20
20
20

ID
A)
11
9
8
-9
-7

30

20

7.5

27

30

20

60

20

80

60

20

6.6

29

43

25

32

2.8

10

-60
60
-60
80
-80
100
-100

+10/-20
20
20
20
20
20
20

-3.4
5
-3.8
3.4
-2.6
3.5
-2.3

120
55
90
100
200
120
300

175
80
130
145
290
160
500

95
48
80
90
165
90
240

120
60
100
115
210
115
300

2.2
1.4
2.8
1.3
2.4
3.2
3.1

6.0
7.3
16
15
16

2010. Renesas Electronics Corporation, All rights reserved.

Free Datasheet http://www.datasheet4u.com/