Bonfring International Journal of Power Systems and Integrated Circuits, Vol.
1, Special Issue, December 2011 43
ISSN 2250 1088 | 2011 Bonfring Abstract--- This paper presents a high-Q MWCNT (Multi Wall Carbon Nano-Tube) network based pulse-shaped on-chip embedded nano-inductor for power electronic circuits. This high-Q inductor is fabricated using a composite of MWCNT (multi Wall Carbon Nano Tube) network and Fe in semiconductor processing environment. A layer of nano composite film (Cu/CoFe2o4) is patterned as an introduction layer of the nano-inductor. The performance of the fabricated nano-inductor is compared with and without the nano composite film. An inductance of 6.25 nH, with a quality factor of 186 at 2.4 GHz is measured from the MWCNT network inductor (with nano composite film). The maximum inductance of the nano inductor is about 6.6 nH, and the maximum Q factor is about 440. However the inductance value and the quality factor is improved that of conventional micro scale inductors, the chip area of the inductor is reduced only 25%. Keywords--- Nano-Inductor, power electronics, high Q.
I. INTRODUCTION NDUCTORS are one of the bulk devices which limit the performance in most of the power electronic circuits. During 19th century was Micro Electro Mechanical inductors played an important role in replacing conventional copper inductors, since the power consumption of the later is higher due to the high current density. As an example the maximum current density of a twenty turns of 16 AWG (American Wire Gauge) inductor with 26 mm2 diameter will be about 275 A/cm2. Micro-scale inductors have been investigated by several researchers, and it has been proved that they can be superior to conventional copper inductors [1-4]. However, these investigations have also revealed that phenomena such as the skin effect, proximity effects, eddy current losses, large power consumption, and electric field penetration into the substrate degrade the performance of on-chip inductors at high frequencies. The primary challenge in designing on-chip inductor with high quality factor is reducing the substrate losses and series resistance of inductors [5]. Micro-Electro- Mechanical (MEM) inductors, with the advanced micromachining techniques, such as Bipolar and CMOS processes, offer high ohmic resistance, and confine the substrate losses. On the other hand, to reduce the series resistance, post processed Cu inductors are suggested [6]. To improve the quality factor of the on-chip inductor several approaches have been proposed [7-10]. In the last decade of 19th century tubular structures of
B.S. Sreeja, SSN College of Engineering, Chennai. S. Radha, SSN College of Engineering, Chennai. CNTs are identified. There are two different types of CNTs that can have high structural perfection. SWCNT consist of a graphite sheet seamlessly wrapped into a cylindrical tube. MWCNT comprise an array of such nanotubes that are concentrically nested like rings. The unique electrical properties of CNTs are to a large extent derived from their peculiar electronic structure. CNT interconnect has a lower skin effect compared to copper interconnects [11]. Moreover, unlike copper interconnect, the resistance of the CNT interconnect increases by a smaller amount or remains unchanged at high frequencies [12]. In addition to magnetic inductance, CNT offers kinetic inductance due to the smaller momentum relaxation time. Moreover it is obvious form the relation
that the magnetic field (H) induced by the current (I) in CNT is about several thousand times greater than that induced by the current in normal copper wire whose radius is several thousand times greater than that of CNTs. As in the relation
the magnetic field (H) is directly proportional to the inductance (L), as large magnetic field results in large inductance. With this properties, CNT interconnect is an appropriate material for on-chip inductors for GHz applications. Implications of on- chip inductor using CNTs had been investigated thoroughly and the detailed performance analysis is presented in [13-14]. It is subsequently shown that CNT based inductors offer three times higher Q factor than their copper based counterparts, without using any magnetic materials or Q factor enhancement techniques.
Figure 1: SEM Images of CNT Structures (a) CNT Network Structure (many small length CNTs scattered in an area) (b) Densified CNT Bundle Array (c) CNT Bundles ( long CNTs WHICH are Continuous and Intact) (d) Well Aligned CNT bundles
Fabrication and Characterization of High-Q Nano- Inductor for Power Electronics B.S. Sreeja and S. Radha I Bonfring International Journal of Power Systems and Integrated Circuits, Vol. 1, Special Issue, December 2011 44 ISSN 2250 1088 | 2011 Bonfring
(a) (b)
(c) Figure 2: (a) CNT Network without Conductive Paths (b) CNT Network with Conductive Paths (c) Schematic illustration of MWCNT based Pulse-Shaped Embedded Nano-Inductor with its Dimensions
(a) (b)
(c) Figure 3: Characteristics of the Nano Composite Inductor Plotted as a Function of frequency (a)Relative permittivity of MWCNT network (70% MWCNT+ 30%Fe) (b) Relative Permeability of MWCNT Network (70% MWCNT+ 30%Fe) (c) Sheet Conductances of MWCNT Networks with same amount of Fe Catalyst where the Diameter of the MWCNT is about 15~20 nm with an Average Length of 5 m.
II. BACKGROUND A. CNT Networks: CNT is a rolled graphite sheet, as example of a quasi-one dimensional conductor have attracted considerable attention since its discovery, and its structures are formed as bundles (fig.1.(b), (c) and (d)) and networks (fig.1.(a)) as shown in fig.1. Well aligned CNT bundles continue to receive attention in electronics world, because of its attracting electrical and magnetic properties. Moreover properties of properly aligned CNT bundles are rigorously investigated in the literatures [15- 16]. The development of CNT bundles is limited by the lack of effective bulk methods for precisely manipulating and aligning nanotubes at the very fine nano scale. By coupling magnetically susceptible components such as ferromagnetic material with CNTs, CNT networks (CNTNs) can be created and they provide easier manufacturability and cost effective solutions. A random CNTN, as a semiconducting material for Thin Film Transistors (TFTs), shows higher performance in comparison with its organic counterpart, allows low-cost fabrication, proves the possibilities of growth in future CNTN applications [17]. The synthesis and deposition of CNTNs can be accomplished using simple process steps without additional complicated processes. Random CNTNs are formed by directly growing CNTs on previously dispersed catalyst islands with chemical vapour deposition (CVD) at high temperatures. III. PROPOSED INDUCTOR SCHEMATICS The proposed inductor schematic is illustrated in Fig.2(c). The effective volume of the inductor is approximately 0.09 x .036 x .025 mm3. Each segment of the MWCNT network based inductor can be represented by series inductances (kinetic, self, and mutual), series resistances (contact, scattering, interface, and sheet), parallel capacitance (electrostatic and parasitic) and substrate parasitics. Generally nanotubes are treated as good conductors due to its high aspect ratio (L/D). Since the diameter (D) of the nanotube is relatively very small compared to the length (L) of the tube it exhibits good electrical conductivity. According to this, the long MWCNT bundle will have more electrical conductivity. In this work MWCNT networks (number of small nanotubes embedded in a line), are used to form inductor lines. MWCNT network with randomly distributed tubes will have very high resistance and low conductivity which further increases the resistive loss. Hence it is very important to keep an eye on the continuity of the nanotube arrangement while fabrication to improve the electrical conductivity of the MWCNT network line. Fig.2.(a) shows the structure of MWCNT network, the electrical conductivity of the network is very low due to the low density of tubes. With the increase of randomly distributed nanotubes the distance among the nanotubes become smaller gradually and complete electrical conducting paths to transfer electric charges has been formed as shown in Fig.2.(b). As this stage, the electrical conductivity increases remarkably. Further increasing the density increases conductivity, but finally tend to be constant at high volume fractions of CNTs. The effective Bonfring International Journal of Power Systems and Integrated Circuits, Vol. 1, Special Issue, December 2011 45 ISSN 2250 1088 | 2011 Bonfring conductivity of the embedded line depends on the length, diameter, concentration and interface properties of the MWCNTs. The effective conductivity of the inductor is shown in Fig. 3(c). The conductivity increases with MWCNT network density. At high frequencies the conductivity remains almost constant. IV. DEVICE FABRICATION The proposed inductor was fabricated on a glass substrate. A glass substrate was chosen to prevent degradation of self resonant frequency at high frequencies. A SU-8 mold was used to pattern the inductor lines on the glass substrate. SU-8 mold does not show aggression with the organic chemicals and rigid for insulating layer. The thickness of the patterned layer was around 10 m. 5 nm/120 nm/5 nm Ti(200A)/Cu(2000A)/Ti(200A) seed layer were deposited by RF sputter on the patterned substrate. The most top layer is utilized as an adhesion promotion layer for the PR molding process. Super-paramagnetic CoFe2O4 nanocomposite powder with the size of less than 55 nm is chosen to prepare the solution. This nano composite solution was prepared in an alkaline non-cyanide copper plating solution to avoid a chemical reaction because the conventional acid sulfate copper plating solution reacts with the CoFe2O4 nanocomposite and causes very little CoFe2O4 nanopowder incorporation in Cu matrix. A layer of Cu/CoFe2O4 nano composite was developed inside the mold.
CNT droplet was made by dispersing MWCNT (CVD MWNT 95) powder (70%) and Fe (30%) in ethanol. In this work the average length of the CVD MWNT 95 was ~5 m with an average diameter of 15~20 nm. The aspect ratio of the MWCNTs is 250 approximately. Fe is used as a catalyst which results in Fe being incorporated into the CNTs. Fe is an impurity magnetic material and is purposely used in order to produce an inductive phase at low frequency [7]. Additionally CNT-Fe nanoparticles are much stronger and have higher conductivity than conventional and classical particles. A well- dispersed CNT droplet was deposited over the nanocomposite film and dried using evaporation. Ethanol was evaporated by using the vacuum chamber. After deposition, the developed structure was patterned by photolithography and the residual MWCNT deposition on the mold was removed by rubbing. The filling and rubbing process was repeated few times and deionised water was dropped to get high packing density of MWCNT networks in the inductor lines. Pressing and stretching the CNTs can change their electrical properties by changing the quantum states of the electrons in the carbon bonds. MWCNT inductor was encapsulated by Cu since the quality factors can be improved by Cu electroplating. Cu electroplating in another way covers the gap between the MWCNTs. The maximum current density was 12 mA/ cm2. The structure was fabricated with and without the nanocomposite film to verify the effects caused by the film. Fig. 4 shows an SEM image of the fabricated CNT network based inductor. A. Measurement Results and Discussion The s-parameters were measured with the help of an HP8510C network analyzer and a corresponding cascade Micro-tech ground-signal-ground probing station in the frequency range of 0.1 GHz to 10 GHz. Dummy pads were designed to extract the parameters of the designed inductor. The parasitic parallel capacitance and the series contact resistance between the substrate and the contact pads of the inductor are de-embedded via the dummy patterns and the measured S-parameters are then transformed to Y-parameters from which the inductance and the quality factors are calculated using equation (1).
B. Electrical Characterization The high frequency permittivity and permeability characteristics were estimated from the S parameters using vector network analyzer. Two port measurements were employed, the measured permeability varies from 5 to 15(refer Fig 3.(b)) depending on the ferrite loading and the tangent losses were less than 0.001 dB when the ferrite 4 loading was above 25%. The permittivity of the MWCNT network was measured between 7.5 to 18 over a frequency range of 0 to 10 GHz as shown in Fig.3.(b). Bonfring International Journal of Power Systems and Integrated Circuits, Vol. 1, Special Issue, December 2011 46 ISSN 2250 1088 | 2011 Bonfring C. Q-Factor of nano inductor Quality factor, an extremely important figure of merit of the inductor is the ratio of energy stored to energy dissipated.
where E stored/cycle is the energy stored in the inductor per cycle, while E lost/cycle is the energy lost in the inductor per cycle. Pdiss represents the average power dissipated by the inductor, and E mag and E elect represent the averages of the stored magnetic (due to inductance) and electric energies (due to capacitance), respectively. Q factor can also be regarded as a measure of the ratio of the wanted quantity, related to the inductive reactance to the unwanted quantity (resistance). At low frequencies (capacitive effect is low), the Q factor increases linearly with frequency. As frequency increases, capacitive and magnetic coupling with substrate become more and more significant, which increases energy dissipation. The capacitive loss becomes significant near the self resonant frequency (SRF). The SRF of the MWCNT inductor is very high (>>20 GHz), beyond the range of the network analyzer, hence the capacitive loss is small and negligible.
Figure 5: Measurement Results of the MWCNT Inductor showing Inductance and Q Factor with Respect to Frequency
Figure 6: Hysteresis characteristics of Magnetic Field Density (H) In addition, the skin/proximity effects of the conductor also increase the loss (eddy current loss) of the inductor. In this work the nanocomposite film on the substrate highly reduces the skin effect due to its high resistivity. However the eddy current loss is minimized by the nanocomposite film, a 10% degradation in the Q-factor is measured at the low frequencies (0.1 GHz-1.2 GHz) in comparison with that of the MWCNT inductor without nanocomposite film. It may be resulted by the increase of the electrical resistivity. Together with low skin effect and attracting properties of nano tubes the inter leg capacitance effects were comparatively small. with More the non-conductive second phase particles incorporated into a metal matrix, the higher the electrical resistivity of the film is measured. However CNT offers large kinetic inductance, the impact of kinetic inductance on the Q-factor improvement is negligible. To produce high Q inductors the magnetic-field induced inductance should be maximized. Since the magnetic inductance is dependent on the geometry and area, it can be expected that CNT-based high Q inductors would require similar area as conventional metal inductors. The addition of superparamagnetic nanoparticles in to the Cu matrix increases the Q factor at high frequencies via the high frequency characteristics (> 1 GHz) of the superparamagnetic nano particles. Fig.6. shows the SQUID measurement results at room temperature. Uniform magnetic flux pattern is seen. The hysteresis characteristic of the device shows the ferromagnetic properties. Without largely sacrificing the reduction of electrical conductivity, the fabricated nano inductor shows its potential for the fabrication of high performance cost effective high Q on chip inductor due to its effective reductions of size, and eddy current loss. Given that the inductance is 6.3 nH and total resistance of the inductor is extracted as a 530 m, the quality factor is approximately 179 at 2.4 GHz. Fig 5 shows the measurement results of the inductor. V. CONCLUSION In this paper we proposed a pulse structure for MWCNT bundle inductor. This CNT network based inductor is fabricated on a glass substrate. The device is tested with and without nano composite film. It is noted from the performance comparison, that the addition of nano composite layer enhances the Q factor. At 2.4 GHz, the commercially used frequency range, we measured a Q factor of 226 and an inductance of 28.3 nH. The fabricated device produces a maximum Q factor of at 6.2 GHz. The self resonant frequencies are above 20 GHz, which are above the range of the network analyzer used. The self resonant frequencies are predicted to be in the range of 100 GHz-150 GHz, and with these self resonant frequencies the proposed inductor can be used for power electronic applications since the energy loss is low. Further, the analysis in extracting the equivalent circuit parameters is expected. Also with further improvements in the fabrication the inductance could be increased at high frequencies above 5 GHz. REFERENCES [1] H. Sugawara, Y. Yoshihara, H. Ito, K. Okada, and K. Masu, Wide- range RF variable inductor on Si CMOS chip with MEMS actuator, in Proc. 34th Eur. Microw. Conf., Oct. 2004, vol. 2, pp. 701704. [2] J. Salvia, J. A. Bain, and C. P. Yue, Tunable on-chip inductors up to 5 GHz using patterned Permalloy laminations, in IEDM Tech. Dig., Dec. 2005, pp. 943946. [3] I. Zine-El-Abidine, M. Okoniewski, and J. G. McRory, RF MEMs tunable inductor using bimorph microactuators, in Proc. Int. Conf. MEMS, Nano Smart Syst., Jul. 2005, pp. 436437. [4] C. P. Yue and S. S. 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