FEATURES

Improved Replacement for SILICONIX, FAIRCHILD, &

NATIONAL: 2N5911 & 2N5912
LOW NOISE (10kHz) e
n
~ 4nV/Hz
HIGH TRANSCONDUCTANCE (100MHz) g
fs
4000S
ABSOLUTE MAXIMUM RATINGS
1

@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 C
Operating Junction Temperature -55 to +150 C
Maximum Power Dissipation
Continuous Power Dissipation (Total) 500mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain -25V
Gate to Source -25V
MATCHING ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911 LS5912 LS5912C
SYMBOL CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAX
UNIT CONDITIONS
GS2 GS1 V V
Differential Gate to Source
Cutoff Voltage
10 15 40 mV V
DG
= 10V, I
D
= 5mA
T
V V GS2 GS1

Differential Gate to Source
Cutoff Voltage Change with
Temperature
20 40 40 V/C
V
DG
= 10V, I
D
= 5mA
T
A
= -55 to +125C
DSS2
DSS1
I
I

Gate to Source Saturation
Current Ratio
0.95 1 0.95 1 0.95 1 % V
DS
= 10V, V
GS
= 0V
G2 G1 I I
Differential Gate Current 20 20 20 nA
V
DG
= 10V, I
D
= 5mA
T
A
= +125C
fs2
fs1
g
g

Forward Transconductance
Ratio
2

0.95 1 0.95 1 0.95 1 %
V
DS
= 10V, I
D
= 5mA
f = 1kHz
CMRR
Common Mode Rejection
Ratio
85 dB
V
DG
= 5V to 10V
I
D
= 5mA
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
SOIC-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2

1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2

5
BOTTOM VIEW
TO-78
1
2
3
6
7
D1
G1
S1
S2
D2
G2

1
3
2
SOT-23
TOP VIEW
6
4
5
S2
D2
G2
G1
D1
S1
5
BOTTOM VIEW
TO-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2

LinearIntegratedSystems
LS5911 LS5912 LS5912C
IMPROVED LOW NOISE
WIDEBAND MONOLITHIC
DUAL N-CHANNEL JFET

































STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911 LS5912 LS5912C
SYM. CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAX
UNIT CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage -25 -25 -25 I
G
= -1A, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 V
DS
= 10V, I
D
= 1nA
V
GS(F)
Gate to Source Forward Voltage 0.7 I
G
= 1mA, V
DS
= 0V
V
GS
Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4
V
V
DG
= 10V, I
G
= 5mA
I
DSS
Drain to Source Saturation Current
3
7 40 7 40 7 40 mA V
DS
= 10V, V
GS
= 0V
I
GSS
Gate Leakage Current -1 -50 -50 -50 V
GS
= -15V, V
DS
= 0V
I
G
Gate Operating Current -1 -50 -50 -50
pA
V
DG
= 10V, I
D
= 5mA






LinearIntegratedSystems4042ClipperCourtFremont,CA94538Tel:510490-9160Fax:510353-0261




LinearIntegratedSystems4042ClipperCourtFremont,CA94538Tel:510490-9160Fax:510353-0261















DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911 LS5912 LS5912C
SYM. CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAX
UNIT CONDITIONS
f = 1kHz 4000 10000 4000 10000 4000 10000
g
fs

Forward
Transconductance
f = 100MHz 4000 10000 4000 10000 4000 10000
f = 1kHz 100 100 100
g
os
Output Conductance
f = 100MHz 150 150 150
S V
DG
= 10V, I
D
= 5mA
C
iss
Input Capacitance 5 5 5
C
rss
Reverse Transfer Capacitance 1.2 1.2 1.2
pF
V
DG
= 10V, I
D
= 5mA
f = 1MHz
NF Noise Figure 1 1 1 dB
V
DG
= 10V, I
D
= 5mA
f = 10kHz, R
G
= 100K
f = 100Hz 7 20 20 20 nV/Hz
V
DG
= 10V, I
D
= 5mA
f = 100Hz
e
n

Equivalent Input
Noise Voltage
f = 10kHz 4 10 10 10 nV/Hz
V
DG
= 10V, I
D
= 5mA
f = 10kHz
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse Test: PW 300s Duty Cycle 3%
3. Assumes smaller value in numerator.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or
1
2
3
4
8
7
6
5
SOIC-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
Please contact the factory
regarding the availability of
optional packages.
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2
3
5
6
7
0.029
0.045
SEATING
PLANE
1
3
5
SOT-23
DIMENSIONS IN
MILLIMETERS
2
4
6
0.95
1.90
1.50
1.75
2.60
3.00
0.35
0.50
2.80
3.00
0.90
1.30
0.00
0.15
0.09
0.20
0.10
0.60

1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2

1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2

TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1 5
6
0.046
0.036
45
0.048
0.028
0.100
0.050
7
1
SOIC
2
3
4 5
6
7
8
DIMENSIONS IN
INCHES
0.2284
0.2440
0.189
0.196
0.0075
0.0098
0.021
0.014
0.018 0.050
0.0040
0.0098
0.150
0.157
1
PDIP
DIMENSIONS IN
INCHES
2
3
4 5
6
7
8
0.145
0.170
0.060
0.100
0.250
0.375
0.038
0.295
0.320