CS 8

Phase Control Thyristors

VRRM = 800-1200 V
IT(RMS) = 25 A
IT(AV)M = 16 A

VRSM
VDSM

VRRM
VDRM

TO-64

900
1300

800
1200

Type
1

2
3
3

CS 8-08io2
CS 8-12io2

M5

1 = Anode, 2 = Cathode, 3 = Gate

Symbol

Test Conditions

Maximum Ratings

IT(RMS)
IT(AV)M

TVJ = TVJM
Tcase = 85C; 180 sine

ITSM

TVJ = 45C;
VR = 0
TVJ = TVJM
VR = 0

Features
Thyristor for line frequencies
International standard package
JEDEC TO-64
Planar glassivated chip
Long-term stability of blocking
currents and voltages

It

25
16

A
A

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

250
270

A
A

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

200
220

A
A
2

TVJ = 45C
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

310
306

As
A2s

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

200
200

A2s
A2s

Applications
Motor control
Power converter
AC power controller

Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling

(di/dt)cr

TVJ = TVJM
repetitive, IT = 48 A
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.2 A
non repetitive, IT = IT(AV)M
diG/dt = 0.2 A/ms

(dv/dt)cr

TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ; method 1 (linear voltage rise)

PGM

TVJ = TVJM
IT = IT(AV)M

tP = 30 ms
tP = 300 ms

150

A/ms

500

A/ms

1000

V/ms
Dimensions in mm (1 mm = 0.0394")

PG(AV)

10
5
0.5

W
W
W

VRGM

10

TVJ
TVJM
Tstg

-40...+125
125
-40...+125

C
C
C

Md

Mounting torque

Weight

2.5
22
6

Nm
lb.in.
g

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

2000 IXYS All rights reserved

1-3

CS 8
Symbol

Test Conditions

Characteristic Values

IR, ID

TVJ = TVJM; VR = VRRM; VD = VDRM

VT

IT

1.6

VT0
rT

For power-loss calculations only (TVJ = 125C)

1.0
18

V
mW

VGT

VD = 6 V;

IGT

VD = 6 V;

VGD
IGD

TVJ = TVJM;

IL

= 33 A; TVJ = 25C

mA

TVJ = 25C
TVJ = -40C
TVJ = 25C
TVJ = -40C

2.5
3.5
30
50

V
V
mA
mA

VD = 2/3 VDRM

0.2
1

V
mA

TVJ = 25C; tP = 10 ms
IG = 0.09 A; diG/dt = 0.09 A/ms

100

mA

IH

TVJ = 25C; VD = 6 V; RGK =

80

mA

tgd

TVJ = 25C; VD = 1/2 VDRM

IG = 0.09 A; diG/dt = 0.09 A/ms

ms

tq

TVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms

VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM

typ.

60

ms

RthJC
RthJH

DC current
DC current

1.5
2.5

K/W
K/W

dS
dA
a

Creepage distance on surface

Strike distance through air
Max. acceleration, 50 Hz

1.55
1.55
50

mm
mm
m/s2

Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128

102

50

ms

tgd

IGT: TVJ= 25C

IT

101

30

IGT: TVJ= -40C

lim.

40

IGT: TVJ= 0C

VG

typ.

lim.

20

100

typ.

10

TVJ= 125C
TVJ= 25C

A
IGD: TVJ= 25C
IGD: TVJ=125C

0
0

25

50
IG

mA

75

Fig. 1 Gate voltage and gate current

Triggering:
A = no; B = possible; C = safe

2000 IXYS All rights reserved

10-1
10-2

10-1

A 101

100
t

Fig. 2 Gate controlled delay time tgd

0
0.0

0.5

1.0

1.5 V
VT

2.0

Fig. 3 On-state characteristics

2-3

CS 8
300

20

1000

VR = 0 V

800
A
s

A
250

600

50Hz, 80%VRRM

ITSM
200

A
15
IT(AV)M

I2t

TVJ = 45C
TVJ = 125C

400

150

10

TVJ = 45C
100

200
5

TVJ = 125C

50

0
10-3

100
10-2

10-1

100

101

4 5 6 7 ms
8 910
t

Fig. 5 I2t versus time (1-10 ms)

Fig. 4 Surge overload current

ITSM: crest value, t: duration

50

100

C 150
Tcase

Fig. 6 Maximum forward current at

case temperature 180 sine

40

RthJA :

2.8 K/W

30

3.2 K/W

PT

3.6 K/W
3.6 K/W

20

5.2 K/W

DC
180 sin
120
60
30

10

7 K/W

0
0

10

15

20
25 A
IT(AV)M

0
30

50

100

C 150

Tamb

Fig. 7 Power dissipation versus on-state current and ambient temperature

RthJH for various conduction angles d:

3.5
K/W

d = 30
d = 60
d = 120

3.0

d = 180

2.5
ZthJH

d = DC

2.0

RthJH (K/W)

DC
180
120
60
30

2.5
2.79
2.95
3.17
3.32

Constants for ZthJH calculation:

1.5

i
1
2
3
4
5
6

1.0
0.5
0.0
10-3

10-2

10-1

100

101

102
t

Rthi (K/W)

ti (s)

0.252
0.333
0.5
0.833
0.416
0.166

0.005
0.0225
0.145
0.43
2.75
23

103

Fig. 8 Transient thermal impedance junction to heatsink

2000 IXYS All rights reserved

3-3