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Understanding a Digital
Transistor Datasheet
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APPLICATION NOTE
Introduction
Maximum Ratings
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
IC
100
mAdc
VIN(fwd)
40
Vdc
VIN(rev)
10
Vdc
The first spec, VCBO, states that the maximum voltage that
can be applied from the collector to the base is 50 V. The
CollectorEmitter Voltage, VCEO, spec states the maximum
voltage that can be applied from the collector to emitter is
50 V. In addition, the table specifies that the maximum DC
collector current (IC) that the device can conduct is 100 mA.
There are two maximum ratings for the input voltage,
forward and reverse. The input voltage is defined as the
voltage applied from the base and the emitter. The maximum
input forward voltage is determined from the power
capabilities of the input resistor, R1. Figure 3 and Equations
1 and 2 describe how the maximum input forward voltage is
calculated when the maximum power capability of R1 is
220 mW. It is important to use the minimum value of R1
because it will cause the greatest power to be dissipated on the
die. The minimum value of R1 can be found in the Electrical
Characteristics Table of every Digital Transistor datasheet. In
this case R1(min) = 7 kW. The resulting maximum input
forward voltage is 40 V. For this particular device a voltage
greater than this would result in the resistor failing.
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For ICBO and ICEO, one can expect the leakage current to be
below the value that is stated on the datasheet when a reverse
voltage is applied between the respective junctions.
However, IEBO is dependent on both the input resistor and
the baseemitter resistor. The resistor network path is
significantly less resistive then the path through the reversed
biased baseemitter junction. Ohms Law is used to
determine the IEBO value. An example for a Digital
Transistor with R1(min) = 7 kW, R2(min) = 7 kW, and a VEB =
6 V is shown below. It is important to note that the minimum
value of 7 kW was used instead of 10 kW. This is done
because it will estimate the largest possible leakage.
V R1
R1
V R1 + P R1
+ 0.220
R1
7000 + 39.3 V
I EBO +
(eq. 1)
(eq. 2)
IB +
*1
When R BE R 2, 1 ) 1 + 1
R BE R 2
R2
(eq. 3)
*1
R Equivalent + 1
R2
VB + VE
+ R2
R R) R
1
IC
5 mA
+
+ 83 mA
60
h FE
(eq. 6)
(eq. 5)
R Equivalent + R BER 2 + 1 ) 1
R BE R 2
6V
+ 0.43 mA
7 kW ) 7 kW
(eq. 4)
Electrical Characteristics
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VOH, spec are: VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW. Under
these conditions the output voltage will be greater than
4.9 V. Refer to Figure 6 for further understanding of the VOL
and VOH specs.
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc
IEBO
0.5
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mA, VCE = 10 V)
hFE
35
60
VCE(sat)
0.25
Vdc
Vi(off)
1.2
0.8
Vdc
Vi(on)
2.5
1.8
Vdc
VOL
0.2
Vdc
VOH
4.9
Vdc
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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AND9129/D
because the ratio of R1/R2 is more pertinent when designing
with Digital Transistors. The R1/R2 ratio is what controls
the critical parameters of the Digital Transistor. However, if
desired it is possible to calculate the minimum and
maximum values of R2. Equations 7 and 8 help explain how
to do this using the values in Table 2.
R 2(min) +
R 2(max) +
R 1(min)
(R 1R 2) max
R 1(max)
(R 1R 2) min
7 kW
1.2
13 kW
0.8
+ 5.8 kW
(eq. 7)
+ 16.3 kW (eq. 8)
Design requirements:
Polarity: NPN
IC = 1020 mAdc
VCE(max) = VCB(max) = 40 Vdc
VIN(fwd) = 20 Vdc
VIN(rev) = 10 Vdc
Micro controller output voltage:
Off: 0.40.6 V
On: 1.54.2 V
Micro controller max output current: 250 mA
5.3 V
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AND9129/D
The next requirement to look at is Vi(off). In the design
requirements it states that the micro controller will give a
voltage of 0.40.6 V when it wants the Digital Transistor to
be OFF. This eliminates the Digital Transistors that have a
maximum Vi(off) spec of 0.5 V because these should be
supplied with a voltage of less than 0.5 V when the device
is desired to be OFF.
The design requirements also state that the maximum
output voltage of the micro controller is 4.2 V. A Digital
Transistor needs to be selected that can provide a maximum
IC of 20 mA when the input voltage is 4.2 V. It also has to
provide an IC of 10 mA with an input voltage of greater than
1.5 V. Looking at the Input Voltage vs. Output Current charts
of the four remaining Digital Transistors only two meet the
input voltage requirements. They are the Digital Transistors
with R1/R2 = 10 kW/10 kW and 22 kW/22 kW.
It is also important to consider the max output current of
the controller. In this case the micro controller can source a
maximum of 250 mA. For the 10 kW/10 kW digital transistor
(eq. 9)
(eq.
10)
VIN(rev) (V)
Vi(on) (V)
R2 (k)
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
10
10
10
10
2.0 @ 20 mA
2.0 @ 20 mA
0.5
0.5
2.2
2.2
12
12
10
10
2.0 @ 20 mA
2.0 @ 20 mA
0.5
0.5
4.7
4.7
30
30
10
10
3.0 @ 20 mA
2.5 @ 20 mA
0.5
0.5
10
10
40
40
10
10
2.5 @ 10 mA
2.5 @ 10 mA
0.8
0.8
22
22
40
40
10
10
2.5 @ 5 mA
2.5 @ 5 mA
0.8
0.8
47
47
40
40
10
10
3.0 @ 2 mA
3.0 @ 2 mA
0.8
0.8
100
100
40
40
10
10
3.0 @ 1 mA
3.0 @ 1 mA
0.5
0.5
2.2
47
12
12
1.1 @ 5 mA
1.1 @ 5 mA
0.5
0.5
4.7
47
30
30
1.3 @ 5 mA
1.3 @ 5 mA
0.5
0.5
10
47
40
40
1.4 @ 1 mA
1.4 @ 1 mA
0.5
0.5
22
47
40
40
2.0 @ 2 mA
2.0 @ 2 mA
0.5
0.5
47
22
40
40
10
10
4.0 @ 2 mA
4.0 @ 2 mA
1.2
1.2
2.2
Inf.
12
12
1.3 @ 10 mA
1.1 @ 10 mA
0.5
0.5
4.7
Inf.
30
30
1.3 @ 10 mA
1.3 @ 10 mA
0.5
0.5
10
Inf.
40
40
1.7 @ 10 mA
1.7 @ 10 mA
0.5
0.5
47
Inf.
40
40
4.0 @ 10 mA
4.0 @ 10 mA
0.5
0.5
100
Inf.
40
40
1.5 @ 1 mA
1.5 @ 1 mA
0.5
0.5
Conclusion
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