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The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4066B
gates
Quadruple bilateral switches
Product specification
File under Integrated Circuits, IC04
January 1995
Philips Semiconductors
Product specification
HEF4066B
gates
DESCRIPTION
The HEF4066B has four independent bilateral analogue
switches (transmission gates). Each switch has two
input/output terminals (Y/Z) and an active HIGH enable
input (E). When E is connected to VDD a low impedance
bidirectional path between Y and Z is established (ON
condition). When E is connected to VSS the switch is
PINNING
HEF4066BP(N): 14-lead DIL; plastic (SOT27-1)
E0 to E3
enable inputs
Y0 to Y3
input/output terminals
Z0 to Z3
input/output terminals
APPLICATION INFORMATION
An example of application for the HEF4066B is:
Analogue and digital switching
January 1995
Philips Semiconductors
Product specification
HEF4066B
gates
max.
100
mW
SYMBOL
5
ON resistance
ON resistance
MIN.
TYP. MAX.
CONDITIONS
350
2500
En at VDD
80
245
15
60
175
see Fig.4
115
340
En at VDD
10
RON
50
160
Vis = VSS
15
40
115
see Fig.4
120
365
En at VDD
10
RON
65
200
Vis = VDD
15
50
155
see Fig.4
ON resistance
25
En at VDD
10
10
channels
15
see Fig.4
nA
nA
ON resistance
10
RON
RON
IOZ
current, any
10
channel OFF
15
200 nA
2,25
1 V
4,50
2 V
6,75
2 V
En input voltage
LOW
VIL
10
15
VDD
V
SYMBOL
+25
MAX. MAX.
Quiescent device
current
5
10
IDD
15
Input leakage current at En
January 1995
15
IIN
Iis = 10 A
see Fig.9
Tamb (c)
40
En at VSS
CONDITIONS
+85
MAX.
1,0
1,0
7,5 A
2,0
2,0
15,0 A
input combinations;
4,0
4,0
30,0 A
VI = VSS or VDD
300
1000 nA
En at VSS or VDD
Philips Semiconductors
Product specification
HEF4066B
gates
En at VDD
Iis = 200 A
VSS = 0 V
NOTE
To avoid drawing VDD current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the
bidirectional switch must not exceed 0,4 V. If the switch current flows into terminal Z, no VDD current will flow out of
terminals Y, in this case there is no limit for the voltage drop across the switch, but the voltages at Y and Z may not
exceed VDD or VSS.
January 1995
Philips Semiconductors
Product specification
HEF4066B
gates
SYMBOL
TYP.
MAX.
Propagation delays
Vis Vos
HIGH to LOW
5
10
tPHL
15
5
LOW to HIGH
10
tPLH
15
10
20
ns
10
ns
10
ns
10
20
ns
10
ns
10
ns
note 3
note 3
HIGH
10
80
160
ns
65
130
ns
60
120
ns
80
160
ns
70
140
ns
15
70
140
ns
En Vos
40
80
ns
HIGH
10
20
40
ns
15
15
30
ns
45
90
ns
20
40
ns
15
15
30
ns
0,25
10
0,04
15
0,04
tPHZ
15
5
LOW
10
tPLZ
note 4
note 4
LOW
Distortion, sine-wave
response
Crosstalk between
any two channels
Crosstalk; enable
input to output
OFF-state
feed-through
ON-state frequency
response
January 1995
10
tPZH
tPZL
MHz
10
MHz
15
MHz
mV
10
50
mV
15
mV
MHz
10
MHz
15
MHz
MHz
10
90
MHz
15
MHz
note 4
note 4
note 5
note 6
note 7
note 8
note 9
Philips Semiconductors
Product specification
HEF4066B
gates
VDD
V
Dynamic power
dissipation per
package (P)
10
15
where
fi = input freq. (MHz)
fo = output freq. (MHz)
CL = load capacitance (pF)
(foCL) = sum of outputs
VDD = supply voltage (V)
Notes
1. Vis is the input voltage at a Y or Z terminal, whichever is assigned as input.
2. Vos is the output voltage at a Y or Z terminal, whichever is assigned as output.
3. RL = 10 k to VSS; CL = 50 pF to VSS; En = VDD; Vis = VDD (square-wave); see Figs 6 and 10.
4. RL = 10 k; CL = 50 pF to VSS; En = VDD (square-wave);
Vis = VDD and RL to VSS for tPHZ and tPZH;
Vis = VSS and RL to VDD for tPLZ and tPZL; see Figs 6 and 11.
5. RL = 10 k; CL = 15 pF; En = VDD; Vis = 12 VDD(p-p) (sine-wave, symmetrical about 12 VDD); fis = 1 kHz; see Fig.7.
6. RL = 1 k; Vis = 12 VDD(p-p) (sine-wave, symmetrical about 12 VDD);
V os (B)
20 log ------------------- = -50 dB; E n (A) = V SS ; E n ( B ) = V DD ; see Fig. 8.
V is ( A )
7. RL = 10 k to VSS; CL = 15 pF to VSS; En = VDD (square-wave); crosstalk is Vos (peak value); see Fig.6.
8. RL = 1 k; CL = 5 pF; En = VSS; Vis = 12 VDD(p-p) (sine-wave, symmetrical about 12 VDD);
V os
20 log --------- = -50 dB; see Fig. 7.
V is
9. RL = 1 k; CL = 5 pF; En = VDD; Vis = 12 VDD(p-p) (sine-wave, symmetrical about 12 VDD);
V os
20 log --------- = -3 dB; see Fig. 7.
V is
Fig.6
January 1995
Fig.7
Philips Semiconductors
Product specification
HEF4066B
gates
Fig.8
Fig.9
January 1995
Philips Semiconductors
Product specification
HEF4066B
gates
January 1995