Faculty of Information Engineering & Technology

Electrical & Electronics Department

Associate Prof. Soliman Mahmoud
Course: Electronic Circuits [ELCT 604]
Sheet-2 solution

BJT Transistors
(DC and AC Analysis)
Problem 1: Use VBE (or VEB for PNP transistor) = 0.7 V and =50.
a) Assume the PNP transistor is active then
VB = 4V
Q VEB = VE VB = 0.7V
VE = VB + 0.7 = 4 + 0.7 = 3.3V
0 VE
3.3
IE =
=
= 1mA
3.3K
3.3K
IE
1mA
IB =
=
= 19.6A
(1 + )
51
I C = I B = 50 *19.6 A = 0.98mA

3.3 K
IB

-4V

VC = 4.7 K * I C 10 = 5.392V
V EC = 3.3 + 5.392 = 2.1V
Q V EC > 0.2V ; Then the transistor is working in active region

4.7 k I C
-10 V

b) Assume the PNP transistor is active then

VB = 6V
QVEB = VE V B = 0.7V
VE = VB + 0.7 = 6 + 0.7 = 5.3V

0 VE
5.3
IE =
=
= 1.606mA
3.3K
3.3K
IE
1.61mA
IB =
=
= 31.49 A
(1 + )
51
I C = I B = 50 * 31.49A = 1.575mA

IE

3.3 K

IE

IB

-6V

VC = 4.7 K * I C 10 = 2.59V
V EC = 5.3 + 2.59 = 2.71V
Q V EC < 0.2V ; Then the transistor is working in saturation region

4.7 k I C
-10 V

V EC = 0.2V

VC = V E 0.2 = 5.3 0.2 = 5.5V

5.5 + 10
IC =
= 0.957mA
4.7 K
I B = I E I C = 0.648mA

The condition for saturation I C < I B ; 0.957mA<32.4mA

c) Assume the PNP transistor is active then

VB = 2V
QVEB = VE VB = 0.7V
VE = VB + 0.7 = 2 + 0.7 = 1.3V
2 VE
3.3
IE =
=
= 1mA
3.3K
3.3K
IE
1mA
IB =
=
= 19.6 A
(1 + )
51
I C = I B = 50 *19.6 A = 0.98mA

2V

3.3 K I E
IB

-2 V

VC = 4.7 K * I C 8 = 3.394V
V EC = 1.3 + 3.394 = 2.094V
Q V EC > 0.2V ; Then the transistor is working in active region

d) For the PNP transistor VB = 0V and VE is negative

Then EB and CB junction will be off thus the transistor will operate
in off mode
IE = 0A
IB = 0A
IC = 0A

VC = 10V
VE = 0V

4.7 k

IC

-8 V

3.3 K

4.7 k

-10 V

e) Assume the NPN transistor is active then

VB = 4V
QVBE = VB V E = 0.7V
VE = VB 0.7 = 4 0.7 = 4.7V
4.7 + 10
= 1.128mA
4. 7 K
IE
1.128mA
IB =
=
= 22.11A
(1 + )
51
I C = I B = 50 * 22.11A = 1.106mA
IE =

VC = 3.3K * I C = 3.65V
VCE = 3.65 + 4.7 = 1.05V
Q VCE > 0.2V ; Then the transistor is working in active region

IC

3.3 K
IB

-4 V
4.7 k
IE

-10 V
f) Assume the NPN transistor is active then
VB = 6V
QVBE = VB V E = 0.7V
VE = VB 0.7 = 6 0.7 = 6.7V
6.7 + 10
IE =
= 0.702mA
4.7 K
IB =

IC

3.3 K
IB

IE
0.702mA
=
= 13.77 A
(1 + )
51

I C = I B = 50 * 13.77 A = 0.688mA

VC = 3.3K * I C = 2.272V
VCE = 2.272 + 6.7 = 4.428V
Q VCE > 0.2V ; Then the transistor is working in active region

-6 V
4.7 k
IE

-10 V

Problem 2:

10 V

a) Assume the PNP transistor is active then

VE = 10V
QVEB = VE VB = 0.7V
VB = VE 0.7 = 10 0.7 = 9.3V
9.3
= 93A
100 K
I C = I B = 10 * 93A = 0.93mA
IB =

100 k

I E = I B (1 + ) = 93A *11 = 1.023mA

VC = 2 K * I C = 1.86V
V EC = 10 1.86 = 8.14V
Q V EC > 0.2V ; Then the transistor is working in active region

b) For the PNP transistor VE = 0V and VB is

positive Then EB and CB junction will be off
thus the transistor will operate in off mode
I E = 0A
I B = 0A
IC = 0A

IE

IB

IC

2k

10 V

100 K

VC = 10V

VE = 0V

100 K
2k

-10 V

c) Assume the NPN transistor is active then

VE = 0V
QVBE = VB V E = 0.7V
VB = 0.7V
0.7
I2 =
= 0.07mA
10 K
10 0.7
I1 =
= 0.093mA
100 K
I B = I1 I 2 = 0.093 0.07 = 23A

I C = I B = 10 * 23A = 0.023mA

10 V

10 V
IC

I1

2K

100 K

I2

10 K I B
IE

VC = 10 2 K * I C = 9.54V
VCE = 9.54 0 = 9.54V
Q VCE > 0.2V ; Then the transistor is working in active region

d) Assume the NPN transistor is active then

VE = 0V
QVBE = VB V E = 0.7V
VB = 0.7V
IB =

10 0.7
= 93A
100 K

10 V

2K
100 K
IC

I C = I B = 0.93mA

I E = (1 + ) I B = 1.023mA

IB

IE

VC = 10 2 K * I C = 8.14V
VCE = 8.14 0 = 8.14V
Q VCE > 0.2V ; Then the transistor is working in active region

Problem 3:
Given:

 ;
  .
;
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  ;   

Required: a) Mid-band gain, input resistance and output resistance for   1 

b) Mid-band gain, input resistance and output resistance for   10 
Solution:

a) For   1 

 


1

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AC analysis

 


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Problem 4:
Given:

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Solution:

 

 0.25

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AC analysis

 


100

 10 
 10

 (VA is not given)

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all DC current sources are open circuit

all capacitors are short circuit
The output is taken from the emitter
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Problem 5:
Given: CE amplifier with source
resistance Rs and collector resistance
Rc
Required:
i.
Find the overall small-signal
gain volvi as a function of Rs,
Rc, ,  , and the collector
current 
ii.
Determine the value of dc
collector bias current  that
maximizes the small signal
voltage gain.
iii.
Explain qualitatively why the
gain falls at very high and
very low collector currents.
What is the voltage gain at the optimum  ?

iv.

Solution:



i.

 

 








AC analysis

all DC voltage sources are short circuit

The output is taken from the collector
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10


 
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ii.

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8 = +
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To get the optimum value of  to maximize the gain we will

differentiate the gain with respect to  and equate the result with
zero

Note:


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11


    
     
    
    
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3 

iii.

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3,  A

@ @




When 3 B this means that
 B  (shorted) ; !    @

(As @ is grounded in AC analysis)
When 3 B  this means that
 B (open circuit); 3 C 3 ;the
transistor enters the saturation mode and no amplification is obtained

iv.
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BEST OF LUCK
Eng. Eman Azab

12