Escolar Documentos
Profissional Documentos
Cultura Documentos
1021/cg9004888
2009, Vol. 9
38403843
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004
Qinhuangdao, P. R. China, and College of Physics Science and Technology, Hebei University, 071002
Baoding, P. R. China
Received May 4, 2009; Revised Manuscript Received June 21, 2009
ABSTRACT: The well-controlled synthesis of perfect and homogeneous nanowires requires a fundamental understanding of their
growth kinetics. In the present study, we succeeded in studying for the first time the growth kinetics of electrodeposited Ni crystals in
nanopores by employing the temperature-dependent rate constants yielded from deposition current-time curves. A small growth
-1
activation energy Ea = 0.25 ( 0.01 eV and prefactor t-1
are determined for the Ni crystals in 25 nm diameter pores, and
E,0 = 4.5 ( 0.3 s
they increase with the pore diameter following the Meyer-Neldel compensation rule. On the basis of these studies, the growth
mechanism of electrodeposited Ni nanowires has been revealed.
Crystal growth is one of the most intensively studied topics in
materials science and solid-state physics because many technological systems in the fields of information, communication, energy,
transportation, etc., depend on the availability of suitable crystals
with tailored properties.1 A substantial progress has been made in
the science and technology of crystal growth, and the basic
mechanisms of crystal nucleation and growth are now understood at atomic/molecular levels for bulk and thin film systems,
which enables a well-controlled synthesis of these materials.1-4
Recently, with the rapid development of nanotechnology, a great
deal of interest has been generated in the well-controlled synthesis
of nanocrystals at the nanoscale level in order to produce
nanostructured materials with excellent and tunable functional
properties.5-11 A profound understanding of the growth kinetics
(e.g., growth activation energy and prefactor) of crystals in
nanoscale spaces is crucial for yielding well-controlled perfect
and homogeneous nanowires, which are of particular importance
for fabricating nanodevices with excellent functional properties.
Previous studies on the growth mechanism of nanowires have
been dominantly focused on the thermodynamic processes and
the kinetic studies are limited and mostly focused on the growth of
nanowires yielded by the vapor-liquid-solid route, in particular
the growth of Si nanowires.8-10 Although the electrodeposition
technique has been proven to be one of the most successful
approaches to produce various nanowires with controlled length,
diameter, and growth orientiation,12,13 the growth kinetics and in
particular the microscopic growth mechanism of electrodeposited
crystals in nanopores is far less well understood. This is probably
due to the lack of an experimental technique in obtaining reliable
data on crystal growth in nanopores. More recently, the superlattice structured nanowires have been significantly employed to
study the growth mechanism of electrodeposited nanowires.14
Although in principle the growth rate of electrodeposited crystals
is proportional to the current because the total amount of
substance being converted is proportional to the amount of
charge, hydrogen evolution also consumes charge and makes
it difficult to identify the growth rate of deposited crystals
exclusively.15 Here, in the exemplary case of Ni crystals, we
demonstrate for the first time that the growth kinetics of electrodeposited crystals in nanopores can be experimentally determined
by employing the temperature-dependent rate constants yielded
from deposition current-time curves. This methodology can be
further extended to the study of growth kinetics of other metal
*Corresponding author. E-mail: xyzh66@ysu.edu.cn (X.Z.); xieyanwu@
ysu.edu.cn (Y.X.).
pubs.acs.org/crystal
Communication
Figure 1. Deposition current-time curves measured for electrodeposition of Ni into a porous alumina template (PAT) with 40 nm
diameter pores at a constant potential of -1.0 V at different
deposition temperatures. The insets indicate three stages of the
electrodeposition process (see text). The tE is the characteristic time
indicating the end of the growth process of Ni crystals in the
nanopores (stage I) and can be determined from the current-time
curves (see this figure, T = 275.5 K).
3841
Ea
kB T0
3842
Yu et al.
References
(1) Sunagawa I. In Crystals: Growth, Morphology and Perfection,
Cambridge University Press: Cambridge, U.K., 2005; Part I.
(2) Lan, C. W. Chem. Eng. Sci. 2004, 59, 1437.
Communication
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
(13)
(14)
(15)
(16)
(17)
(18)
(19)
3843
(20) Yelon, A.; Movaghar, B.; Branz, H. M. Phys. Rev. B 1992, 46,
12244.
(21) Yelon, A.; Movaghar, B.; Crandall, R. S. Rep. Prog. Phys. 2006, 69,
1145.
(22) Shimakawa, K.; Abdel-Wahab, F. Appl. Phys. Lett. 1997, 70, 652.
(23) Linert, W.; Jameson, R. F. Chem. Soc. Rev. 1989, 18, 477.
(24) Schmidt, H.; Wiebe, M.; Dittes, B.; Grundmann, M. Appl. Phys.
Lett. 2007, 91, 232110.
(25) Birgeneau, R. J.; Cordes, J.; Dolling, G.; Woods, A. D. B. Phys.
Rev. 1964, 136, A1359.
(26) Stroscio, J. A.; Persson, M.; Bare, S. R.; Ho, W. Phys. Rev. Lett.
1985, 54, 1428.
(27) Sato, H.; Yui, M.; Yoshikawa, H. J. Nucl. Sci. Technol. 1996, 33,
950.
(28) Tanaka, N.; Tamamushi, R. Electrochim. Acta 1964, 9, 963.
(29) Kobayashi, K.; Chiba, A.; Minami, N. Ultrasonics 2000, 38, 676.
(30) Mohanty, U. S.; Tripathy, B. C.; Singh, P.; Das, S. C. J. Electroanal. Chem. 2004, 566, 47.
(31) Kurpick, U. Phys. Rev. B 2001, 64, 075418.
(32) Aurongzeb, D.; Patibandla, S.; Holtz, M.; Temkin, H. Appl. Phys.
Lett. 2005, 86, 103107.
(33) Fichthorn, K. A.; Scheffler, M. Phys. Rev. Lett. 2000, 84, 5371.
(34) Seebauer, E. G.; Allen, C. E. Prog. Surf. Sci. 1995, 49, 265.
(35) Ondrejcek, M.; Rajappan, M.; Swiech, W.; Flynn, C. P. Phys. Rev.
B 2006, 73, 035418.
(36) Wang, J. G.; Tian, M. L.; Mallouk, T. E.; Chan, M. H. W. J. Phys.
Chem. B 2004, 108, 841.
(37) Sun, H. Y.; Li, X. H.; Chen, Y.; Li, W.; Li, F.; Liu, B. T.; Zhang, X.
Y. Nanotechnology 2008, 19, 225601.