2SK3000

Silicon N Channel MOS FET

Low Frequency Power Switching
REJ03G0379-0300Z
(Previous ADE-208-585A (Z))
Rev.3.00
Jun.15.2004

Features
Low on-resistance
RDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA)
4 V gate drive devices.
Small package (MPAK)
Expansive drain to source surge power capability

Outline
MPAK
D
3

3
2
G

1. Source
2. Gate
3. Drain

Note: Marking is ZY.

Absolute Maximum Ratings

(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current

Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR

Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1 %
t
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm )

Rev.3.00, Jun.16.2004, page 1 of 6

Ratings
40
10
1.0
4.0
1.0

Unit
V
V
A
A
A

400
150
55 to +150

mW
C
C

2SK3000

Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Drain to source voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes: 3. Pulse test

Rev.3.00, Jun.16.2004, page 2 of 6

Symbol
V(BR)DSS
VDS(SUS)
V(BR)GSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf

Min
40
40
10

1.1
0.5

Typ

1.2
0.24
0.16
14.0
68
3.0
0.12
0.6
1.7
1.4

Max
60

1.0
5
2.1

0.5
0.3

Unit
V
V
V
A
A
V
S

pF
pF
pF
s
s
s
s

Test Conditions
ID = 100 A, VGS = 0
L = 100 H, ID = 3 A
IG = 100 A, VDS = 0
VDS = 40 V, VGS = 0
VGS = 6.5V, VDS = 0
ID = 10 A, VDS = 5 V
ID = 450 mA, VDS = 10 V Note3
ID = 450 mA, VGS = 4V Note3
ID = 450 mA, VGS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VGS = 4 V, ID = 450 mA
RL = 22

2SK3000

Main Characteristics
Power vs. Temperature Derating

Maximum Safe Operation Area

0.8

50 s

m
(1
o
sh

I D (A)

0.01

4
te

No

Operation in
this area is
limited by R DS(on)

t)

n
tio

Drain Current

Channel Dissipation

ra
pe
O

0.1

0.02

s
m

10

10

0.2

0.05

0.5

0.2

DC

0.4

0.6

PW

Pch (W)

0.

Ta = 25C

50

100

150

Ambient Temperature

0.05
0.2

200

0.5

10 20

Drain to Source Voltage

Ta (C)

50 100 200

V DS (V)

Note4 : When using the glass epoxy board

(10mm x 10mm x 1mm t)
Typical Transfer Characteristics

Typical Output Characteristics

10

10 V 6 V
5V

Pulse Test
4V
I D (A)

4.0
4.5 V
3.0

3.5 V

Drain Current

Drain Current

I D (A)

5.0

2.0
3V

1.0

1
25C
100m

125C
Tc = 25C

10m

1m
V DS = 5 V
Pulse Test

VGS = 2.5 V
0

2
4
6
Drain to Source Voltage

10

100
0

V DS (V)

Drain to Source Saturation Voltage

V DS(on) (V)

1.0

Drain to Source On State Resistance

R DS(on) ( )

Drain to Source Saturation Voltage vs.

Gate to Source Voltage
Pulse Test

0.8

0.6

0.4

ID=2A
1A

0.2

Rev.3.00, Jun.16.2004, page 3 of 6

12

16

4
5
VGS (V)

Static Drain to Source on State Resistance

vs. Drain Current
10
Pulse Test
3
1
0.3

VGS = 4 V

0.1

10 V

0.03

0.45 A
0

1
2
3
Gate to Source Voltage

20

0.01
0.01 0.03

0.1

0.3

10

Static Drain to Source on State Resistance

vs. Temperature
0.5

ID = 0.45 A

0.4

0.3

VGS = 4 V
0.45 A

0.2
10 V

0.1
0
40

Pulse Test
80
120
160

40

Case Temperature

Tc

Forward Transfer Admittance vs.

Drain Current
Forward Transfer Admittance |y fs | (S)

Static Drain to Source on State Resistance

R DS(on) ()

2SK3000

10
5
Tc = 25C
2

75C
0.5

0.2
0.1
0.1

100

Coss

Ciss

10
5

12

200

t d(on)

50
0.05 0.1

1
4

tr
500

100

2
0

tf

1000

50
20

10

t d(off)

2000

Switching Time t (ns)

Capacitance C (pF)

0.5 1
2
5
Drain Current I D (A)

Switching Characteristics

Crss

16

20

Drain to Source Voltage V DS (V)

V GS = 4 V, V DD = 10 V
PW = 5 s, duty < 1 %
0.2
0.5
Drain Current

2
1
I D (A)

Reverse Drain Current vs.

Source to Drain Voltage

Drain to Source DiodeReverse Surge

Destruction Characteristics
5

500
Ta = 25C
1 shot

200

Reverse Drain Current I DR (A)

Applied Power Ps (W)

0.2

5000

VGS = 0
f = 1 MHz

200

V DS = 10 V
Pulse Test

(C)

Typical Capacitance vs.

Drain to Source Voltage
500

25C

100
50
20
10
5
0.05 0.1 0.2 0.5 1

5 10 20

Surge Pulse Width PW (mS)

Rev.3.00, Jun.16.2004, page 4 of 6

50

10 V

5V

V GS = 0

1
Pulse Test
0

0.4

0.8

1.2

Source to Drain Voltage

1.6

2.0

V SD (V)

2SK3000
Transient Thermal Resistance
1000

Thermal Resistance ja (C/W)

300

100

30

10
Condition :
Ta = 25C
When using the glass epoxy board
(10mm x 10mm x 1mmt )

3
1
1m

10 m

100 m
1
10
Pulse Width PW (S)

Switching Time Test Circuit

100

1000

Switching Time Waveforms

Vout
Monitor

Vin Monitor

90%

D.U.T.
RL
Vin
Vin
4V

50

V DD
= 10 V

Vout

10%
10%
90%

td(on)

Rev.3.00, Jun.16.2004, page 5 of 6

tr

10%
90%
td(off)

tf

2SK3000

Package Dimensions
As of January, 2003

0.65

Unit: mm

0.95

0.95

1.9 0.2

+ 0.10

0 0.1

2.8

+ 0.2
0.6

0.16 0.06

0.65

1.5 0.15

0.10
0.4 + 0.05

+ 0.2
1.1 0.1

0.3

2.95 0.2

Package Code
JEDEC
JEITA
Mass (reference value)

MPAK(T)

Conforms
0.011 g

Ordering Information
Part Name
2SK3000

Quantity
3000 pcs

Shipping Container
178 mm Reel Taping (TL)

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.3.00, Jun.16.2004, page 6 of 6

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